Impacts of Post-Cu CMP Queue Time on Reliability.

Yinghong Zhao, Hokyung Park,Ki-Don Lee, Liangshan Chen,Manisha Sharma, Sugento Huandra, Hanson Mao, Brian Filemyr Smith, Wei Xia, Joonah Yoon, Junehwan Kim, Myungsoo Yeo, Shin-Young Chung, Ju Kwang Kim

IEEE International Reliability Physics Symposium（2024）

引用 0|浏览0

暂无评分

摘要

Impacts of BEOL queue time (Q-Time) from post-Cu CMP (Chemical Mechanical Polish) to SiCN capping layer on reliability were investigated. Degradation in electromigration (EM) was observed in both Cu/Low-k (LK) and Cu/Ultra-low-k (ULK) interconnects due to Cu surface oxidation. However, there is no reliability impact in LK dielectric, while significant degradation in ULK dielectric. EM degradation in long CMP Q-Time could be recovered by CMP Buff process.

查看译文

关键词

CMP Queue Time,EM,Low-k,moisture,TDDB

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要