This work presents a comprehensive methodology describing static and dynamic characterization and compact modeling of an ambipolar Schottky barrier field‐effect transistor (SBFET) technology, taking into consideration the integration of specifically designed test structures necessary for accurate scattering parameter measurements. In this work, we demonstrate, for the first time, the complete design flow for this emerging technology, starting with design and fabrication of dedicated high‐frequency test structures for scattering‐parameter measurement up to 110 GHz. The high frequency data are then used to validate a physics‐based compact model for the ambipolar SBFETs. Physically meaningful results are obtained with a good agreement between the measured and compact model data, demonstrating the usefulness of such dedicated methodologies for the refinement of the emerging technology performance.
The wind energy frictional nano‐generator (W‐TENG) can efficiently collect low‐frequency, random mechanical energy from the wind for self‐powered systems, such as smart farms; however, the practical output signal has severe pulse and fluctuation issues. This article introduces a phase‐shift‐assisted wind‐driven W‐TENG with a ternary contact structure. By phase‐shifted parallel superposition of the outputs from two TENG units, a more uniform, low‐ripple electrical output with reduced waveform fluctuation is achieved by the system. A fluorinated ethylene‐propylene (FEP)/copper electrode/rabbit hair ternary medium structure is introduced to reduce charge accumulation and backflow during multiple operations. Based on the rotor geometry, A 15° phase offset was selected, and the phase‐shifted configuration exhibited a more uniform output waveform than the non‐phase‐shifted one. After a 10‐h continuous operation test, the device maintained a relatively stable electrical output, but further long‐term durability tests are still required. At a wind speed of 10 m·s −1 , the system achieved a maximum instantaneous peak power of 0.38 mW, and the phase‐shifted configuration showed improved capacitor charging performance. This system can stably drive LED arrays and also be used to assess corrosion‐related conditions of farmland metal equipment, showing wide prospects and practical value in low‐power supply for smart farms and distributed environmental monitoring.
In recent years, thin film transistors (TFTs) based on HfZrO (HZO) have made significant progress in the fields of memory and neuromorphic computing. However, the fabrication of conventional HZO TFTs usually relies on sophisticated techniques such as atomic layer deposition and rapid thermal annealing. Although these techniques improve device performance, they may increase cost and process complexity. To address this issue, this work proposes a low‐cost and simple solution‐based strategy for fabricating HZO TFTs. The fabricated devices exhibit typical counterclockwise hysteresis, successfully emulating various synaptic plasticity behaviors, as well as achieving stable multilevel conductance states under consecutive pulse stimulation. A three‐layer fully connected neural network constructed using the experimentally measured discrete conductance states of the devices achieves a recognition accuracy of 95% on the MNIST handwritten digit recognition task after 50 training epochs. Furthermore, the weight‐replacement model is extended to a ResNet‐18 deep convolutional neural network, attaining an accuracy of 87% on a 102‐class flower image classification task. The proposed solution‐based process, which requires no complex vacuum equipment, is simple and low‐cost, providing a feasible technological pathway for the development of low‐cost neuromorphic computing and image enhancement applications based on HZO TFTs.
Ti4822 (Ti‐48Al‐2Cr‐2Nb) alloys are of interest for lightweight, high‐temperature applications. In this study, Ti4822 coatings containing 0–2.5 wt% Ce were deposited on TC4 substrates by laser cladding. Their microstructure, hardness, and sliding‐wear behavior were investigated experimentally, with idealized first‐principles calculations used for qualitative comparison. XRD patterns indicated that γ‐TiAl and α 2 ‐Ti 3 Al were the dominant identified phases. The highest measured hardness (727.67 HV under a 1 kgf load), lowest reported friction coefficient (0.43), and minimum wear mass loss (1.4 mg) occurred for the coating prepared with 1.0 wt% Ce. The worn‐surface observations suggested contributions from abrasive and adhesive wear, while the possible roles of oxide‐containing debris remain interpretive. The experimental findings identify 1.0 wt% Ce as the most favorable addition among the compositions tested; the calculations do not establish a unique strengthening mechanism for these multiphase coatings.
Phosphorus doped, n‐type diamond is the enabling factor for bipolar diamond devices. Several decades of research have demonstrated the challenges to prepare material suitable for practical diamond devices. While various groups report phosphorus incorporation, incorporation efficiency is rarely the primary focus, and is typically derived from precursor‐flow instead of reactive species that actually govern incorporation at the growth surface. This research investigates the phosphorus incorporation efficiency based on diamond growth‐ and doping species, the CH 3 and PH radicals, and for a pulsed deposition technique. Here, the methane flow is periodically interrupted while maintaining other growth parameters constant, including the dopant flow. Residual gas analysis (RGA) is operated in a differentially pumped configuration to measure, in real time, growth and doping species concentrations. In conjunction with secondary ion mass spectroscopy (SIMS) the phosphorus incorporation is then related to the plasma chemistry. With the measured growth parameters and SIMS data, an overgrowth‐versus‐desorption kinetic model resolved by Burton–Cabrera–Frank (BCF) step‐flow theory is developed and fitted to the data. Good agreement between model and experiment emerges with a derived maximum incorporation efficiency η ind , referenced to the CH 3 and PH radicals, of about 27% for a maximum phosphorus incorporation of 7 × 10 19 cm −3 .
