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    Advanced materials technologies

    Advanced materials technologies

    JournalISSN 2365-709XeISSN 2365-709X中科院 材料科学 3区

    年发文量

    研究主题

    论文(6033)

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    1NewExperimental and Multiphysics Simulation of Through Glass Vias Fabricated by Laser‐Induced Method: Model Prediction and Validation
    Yuhang Ouyang, Aidi Xiao, Dongyang Hou, Zhenyu Wang, Shunyong Jiang, Hui Jiang,Sheng Liu, Fang Dong

    ABSTRACT This study focuses on the critical processes involved in the fabrication of Through Glass vias (TGVs) in fused silica using a laser‐induced method. A multiphysics coupled simulation model is established, incorporating both the laser modification and subsequent KOH solution etching stages. The model comprehensively considers mechanisms such as heat conduction, solute diffusion, and chemical reaction kinetics, enabling high‐precision prediction of the via formation process. Based on the simulation, TGV structures with a diameter of 25 µm ± 1 µm and good morphological uniformity were successfully fabricated and experimentally validated, confirming the feasibility of simulation‐driven process optimization. The results provide theoretical support and a technical pathway for the controllable fabrication of TGVs in fused silica, offering significant engineering value for high‐density vertical interconnection in advanced packaging.

    2026
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    2NewHigh‐Performance Top‐Gate SnO 2 Transistors Enabled by Defect Modulation and Interface Engineering Using Atomic Layer Deposition
    Jung‐Tae Kim, Ji Hyeon Choi, Jiyeong Yang, Jeongbin Lee, Jiwoo Oh,Ji‐Hoon Ahn,Tae Joo Park, Woo‐Hee Kim

    ABSTRACT Achieving high‐performance SnO 2 field‐effect transistors remains challenging due to the difficulty in simultaneously achieving effective carrier control and efficient carrier transport. Here, we address this challenge by combining spatial defect modulation and dielectric interface engineering in top‐gate SnO 2 field‐effect transistors using atomic layer deposition (ALD). A super‐cycle ALD process enabled spatially controlled Al incorporation at the bottom, middle, or top of a SnO 2 channel, enabling precise modulation of oxygen vacancy‐related defects and carrier concentration. Structural and spectroscopic analyses confirm the vertical confinement of Al dopants and the reduction of oxygen vacancy states. Among the configurations, bottom‐positioned Al incorporation provides optimized channel characteristics, delivering an on/off current ratio of ∼10 5 and a threshold voltage of −0.8 V. To further enhance carrier transport, the influence of HfO 2 , ZrO 2 , and Al 2 O 3 gate dielectrics was investigated in a top‐gate architecture. While devices with HfO 2 and ZrO 2 exhibit comparable electrical characteristics, those employing Al 2 O 3 show a mobility enhancement up to ∼34 cm 2 /V·s. This improvement is attributed to interfacial charge modulation at the Al 2 O 3 /SnO 2 interface, where defect‐mediated carrier supply enhances channel accumulation while mitigating impurity scattering. These results demonstrate that synergistic control of bulk defects and dielectric interfaces provides an effective pathway toward high‐performance SnO 2 transistors.

    2026
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    3NewThe Design of Filler Morphology and Orientation: Two Pivotal Strategies for the Optimization of Thermal Transport in Thermal Interface Materials
    Yulu Su, Xulei Wu,Huatao Wang

    ABSTRACT The continuous advancement in the integration density of microelectronic devices, as well as the development of high‐frequency devices in the background of green energy, has drawn increasing attention to the issue of heat dissipation. Taking IGBTs as an example, although higher power density can improve the output electrical quality, the numerous temperature cycles experienced by the device, compounded by the coefficient of thermal expansion (CTE) mismatch between the multi‐layer materials, severely exacerbate device failure. At this time, thermal interface materials (TIMs) play an irreplaceable role in reducing the temperature failure during this period. However, traditional polymer‐based TIMs with randomly dispersed fillers have low thermal conductivity (TC), and new strategies need to be developed urgently. This paper reviews the morphology and types of thermal fillers with a focus on discussing the synergistic effect of these factors on the thermal conductivity. Furthermore, the review also highlights the enhancement effect of improving the continuity and orientation of the fillers as advanced strategies on the thermal conductivity, aiming to provide theoretical guidance and technical references for the design of next‐generation efficient thermal management materials.

    2026
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    4NewMagnetohydrodynamic Driven Electrodeposited Polypyrrole/NiCo 2 S 4 As Cathode and MoS 2 /ti 3 C 2 T X MXene As Anode for Flexible Solid‐State Asymmetric Microsupercapacitor
    Subhashree Mohapatra, Yashodhan Iyer,Sang Mun Jeong,Brahmananda Chakraborty,Chandra Sekhar Rout

    ABSTRACT The customization of material properties during synthesis is crucial for microsupercapacitors performance, influencing morphology, porosity, and charge transport. This work designed an asymmetric microsupercapacitor (AMSC) with a cathode constituting a polypyrrole/NiCo 2 S 4 (PPy/NCS) composite, deposited with magnetic field assistance, and a MoS 2 /Ti 3 C 2 T x MXene hybrid anode synthesized hydrothermally. The magneto‐electrodeposition process triggers magnetohydrodynamic effects, allowing controlled nucleation and growth, resulting in a porous, interconnected nanosheet architecture of PPy/NCS with diffusion‐controlled faradaic behavior. Theoretical calculations supported experimental findings, showing enhanced density of states and increased quantum capacitance for PPy/NCS. Conversely, the MoS 2 /Ti 3 C 2 T x anode offers high electrical conductivity and increased interlayer spacing, thus promoting rapid ion transport and mixed charge storage kinetics. The AMSC device achieved an extended operating voltage window of 1.6 V, an areal specific capacity of 12.8 mC cm −2 at 0.3 mA cm −2 , and excellent energy–power characteristics, with 90% cycling stability over 10,000 charge‐discharge cycles. It showed mechanical flexibility under various deformation angles and potential for powering low‐voltage devices. This superior performance is due to diffusion‐controlled redox reactions at the cathode, balanced by capacitive contributions at the anode. This work highlights synthesis‐driven property modulation and magneto‐electrodeposition as promising methods for developing advanced electrode materials for next‐generation microscale energy storage systems.

    2026
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    5New4D Printing of Magneto‐Active Soft Elastomers Via Efficient Active Mixing Direct Ink Writing
    Vignesh Selvam,Kostas Danas,Laurence Bodelot

    ABSTRACT 4D printing relies on the 3D printing of materials that respond to various stimuli after printing. Among these, magneto‐active elastomers readily react to magnetic fields, particularly at high magnetic particle loadings. For soft silicones with high particle contents, direct ink writing (DIW) is the most appropriate printing technique. However, a major challenge remains, especially for very‐short‐pot‐life silicones: crosslinking starts once the base is mixed with the curing agent. Hence, a helical mixer with large blades operating at low speed within a large chamber is introduced for the first time in active mixing DIW to specifically address high‐particle‐content, short‐pot‐life silicones. This method offers a steady and efficient mixing of the two silicone components, both loaded with magnetic particles and a rheology modifier, just before extrusion, leading to consistent filament extrusion with even particle distribution in addition to extended printing times without further additives or elaborate control systems. A framework is presented for selecting print parameters, where only the extruder speed needs to be adjusted when switching between inks having different particle contents. The impact of printing strategy on mechanical properties is assessed, and magneto‐active structures that can find applications in tunable actuators, soft robotics, deployable structures, and surface morphing are demonstrated.

    2026
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    高被引作者

    作者引用发文
    Zhong Lin Wang305760
    Guozhen Shen115618
    Conor Walsh9598
    Tiejun Cui95030
    Carmel Majidi92913
    Aslı Atalay8765
    Ozgur Atalay8234
    Zheng Lou8149
    Jing Liu78711
    Muhammad Hussain76720

    高产作者

    作者引用发文
    Zhong Lin Wang305760
    Tiejun Cui95030
    Muhammad Hussain76720
    Minyi Xu25619
    Gerardo Hernandez-Sosa38918
    Guozhen Shen115618
    Wei Huang42117
    Jin Jang11216
    Uli Lemmer36115
    Yang Gao45914

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