The Electrochemical Society hereby retracts the above article. Following concerns raised by a member of the scholarly community, the journal conducted a review and determined that this article constitutes redundant publication. The ECS Transactions paper shares an identical title and substantial overlap in content with an earlier article ACS Nano 2017, 11, 2, 2103–2114, which was not cited within the ECS Transactions article. Skorobogatiy, M., et al., “Piezoelectric Micro- and Nanostructured Fibers Fabricated from Thermoplastic Nanocomposites Using a Fiber Drawing Technique: Comparative Study and Potential Applications,” ACS Nano, published February 14, 2017. In accordance with Committee on Publication Ethics (COPE) guidance, this retraction is issued to correct the scholarly record and inform readers of the prior publication. The journal and the corresponding author agree that retraction is in the best interest of the scholarly record.
Anodic dissolution of titanium was investigated in an amide-type ionic liquid, 1-butyl-1-methylpyrrolidinium bis(trifluoromethyl-sulfonyl)amide (BMPTFSA) in the presence of halide ions, Cl– and Br–. Electropolishing of Ti was possible in the presence of Cl– at 353 K, suggesting that the surface of a Ti electrode with the native oxide layer was activated by Cl–. The dissolved species of Ti after anodic dissolution of Ti at 0 V vs. Ag|Ag(I) was found to be tetravalent [TiCl6]2–, because the applied potential was more positive than the redox potential of [TiCl6]2–/[TiCl6]3–. The morphology of a Ti electrode changed after potentiostatic anodic oxidation at –0.5 V in BMPTFSA containing BMPBr, indicating that anodic dissolution of Ti was possible in the presence of Br–.
We fabricated 400°C-annealed TiN/Hf x Zr 1−x O 2 (HZO)/TiN metal–ferroelectric–metal (MFM) capacitors using H 2 O and O 2 plasma as oxidant gases of thermal (TH) and plasma-enhanced atomic layer deposition (PE-ALD), respectively, for HZO films. The PE-ALD film formed a more ferroelectric orthorhombic phase compared with the TH-ALD case. Therefore, the MFM capacitor with the PE-ALD film showed higher remanent polarization and dielectric constant. For the PE-ALD case, moreover, an oxygen-rich interfacial layer (O-rich-IL) was formed between the HZO film and TiN-bottom electrode during the ALD process. Thus, the MFM capacitor with the PE-ALD film showed less degradation of switching polarization during field cycling compared with the TH-ALD case, because an O-rich-IL should prevent the interface reaction and formation of additional oxygen vacancies in the PE-ALD film during field cycling. Based on these results, it is important to consider the selection of an ALD oxidant gas for the fabrication of HZO-based MFM capacitors.
An ionic clathrate hydrate composed of tri-n-butylbenzyl-phosphonium chloride has been investigated from the viewpoint of phase equilibrium (temperature-composition) relations in comparison with an ionic clathrate hydrate with tri-n-butyl(cyclohexylmethyl)phosphonium bromide. The highest dissociation temperature of the ionic clathrate hydrates composed of tri-n-butylbenzylphosphonium chloride and tri-n-butyl(cyclohexyl-methyl)phosphonium bromide were 274.4 ± 0.1 K and 276.0 ± 0.1 K, respectively at the atmospheric pressure. The dissociation enthalpy of tri-n-butylbenzyl-phosphonium chloride ionic clathrate hydrate was 192 ± 3 kJ·kg−1. These results allow us to suggest that controlling steric structures in the guest compounds might be one of the options for tuning the equilibrium temperatures of ionic clathrate hydrates.
This paper investigates surface damage caused by physical cleaning processes during semiconductor manufacturing. The study focuses on various materials, including FDSOI wafers and polymer films, subjected to high-velocity sprays and cryogenic cleans. Thanks to the supplier process performances and quality control, FDSOI films do not present any specific concern linked with this failure mode. This latter can be observed on whatever films exposed to aggressive physical cleans and the wafers are cleverly used as a test vehicle to evidence surface defects with a revelation method using a wet etchant. It enables the detection of nano-cracks and other damages. Same defects are observed in bulk silicon wafers, and solutions exist to avoid these damages. Different spray types are compared, highlighting the impact of droplet energy distribution on surface integrity. Additionally, a direct characterization method using polymer films is developed to assess physical cleaning damage. The findings emphasize the importance of optimizing cleaning processes to balance defect removal efficiency and surface preservation. Emerging cleaning solutions like polymer coat and peel methods are also discussed for their potential to offer high cleaning performance with minimal surface damage.
