ABSTRACT Hydrogen‐bonded organic frameworks (HOFs) combine crystallinity with dynamic reversibility, yet their weak interlayer interactions pose a fundamental challenge: how to suppress nonradiative decay without sacrificing structural adaptability. This review critically surveys recent progress in luminescent HOFs across three interconnected pillars: fluorescence enhancement through linker rigidification, AIE core integration, and heterostructure engineering; ultralong room‐temperature phosphorescence via heavy atom effects, framework confinement, and triplet to singlet Förster resonance energy transfer; and stimuli‐responsive emission switching upon physical stimuli, such as light, electricity, force, and temperature, as well as chemical triggers including ions, gases, and pH. Distinct from previous accounts, we analyze structure‐property relationships rather than cataloging examples, provide quantitative comparisons through summary tables, and include a dedicated section on key photophysical mechanisms to aid nonspecialist readers. We further identify persistent bottlenecks, including aqueous stability, scalable synthesis, and device integration, and outline a roadmap toward next‐generation HOFs for chemical sensing, bioimaging, and optoelectronics.
ABSTRACT The continuous scaling of complementary metal–oxide–semiconductor technology has created an urgent demand for emerging materials that go beyond silicon. Two‐dimensional (2D) oxides have emerged as promising candidates for post‐Moore information devices, attributed to their outstanding structural stability, inherent compatibility with silicon‐based technology, and diverse functionalities encompassing semiconducting behavior, high‐ κ dielectric response, ferroelectricity, and magnetism. The two‐dimensionalization of nonlayered bulk oxides breaks the inherent limitation of strong three‐dimensional bonding, thereby greatly extending the material family of 2D oxides; this holds great scientific significance for exploring emergent physical properties and device applications. This review systematically presents the classification, synthesis strategies, fundamental physical properties, and device applications of both 2D layered and nonlayered oxides. We highlight key progress in transistors, gate dielectrics, optoelectronic components, as well as 2D ferroelectric and magnetic systems. Finally, we discuss the current challenges pertaining to scalable fabrication, interface engineering, and complementary integration, and offer perspectives on future pathways toward industrial translation and practical electronic applications.
ABSTRACT Beta‐phase gallium oxide ( β ‐Ga 2 O 3 ) is a promising ultra‐wide bandgap semiconductor for high‐power electronics, where the optimal selection of Schottky electrodes enables the achievement of elevated Schottky barrier heights and markedly enhanced device performance. This study investigates the impact of Ni diffusion on the leakage current in (100) β ‐Ga 2 O 3 Schottky barrier diodes (SBDs). Devices were fabricated using electron beam evaporation for Ni and Au Schottky contacts on unintentionally doped single crystals, with Ti/Au ohmic back contacts. Electrical measurements showed Ni‐SBDs exhibit higher reverse leakage current (−0.65 mA/cm 2 at −50 V) and lower Schottky barrier height (1.03 eV) compared to Au‐SBDs (−3.64 nA/cm 2 at −50 V) and (1.41 eV). Cross‐sectional corrected scanning transmission electron microscopy (CS‐STEM) and electron energy loss spectroscopy (EELS) revealed Ni diffusion at the interface of metal and β ‐Ga 2 O 3 , introducing oxygen vacancies that facilitate trap‐assisted tunneling and reduce barrier integrity. Emission microscopy (EMMI) localized leakage sites, which after KOH etching, corresponded to elongated etch pits. Geometric phase analysis (GPA) confirmed continuous strain beneath these pits. Magnetron‐sputtered Ni electrodes (Ni‐MS) amplified diffusion and defects, with voids as primary channels due to enhanced stress concentration. These results elucidate that Ni diffusion‐induced stress damage is the dominant mechanism for leakage under reverse bias, offering guidance for electrode optimization in β ‐Ga 2 O 3 power devices.
ABSTRACT Eu 2+ ‐doped UCr 4 C 4 ‐type phosphors have emerged as a highly promising class of materials for wide‐color‐gamut displays. However, their practical application is significantly hampered by poor moisture resistance. In this work, we address this critical challenge by developing a facile multi‐step coating protocol to enhance the humidity stability of the representative green phosphor RbLi(Li 3 SiO 4 ) 2 : Eu 2+ (RLSO: Eu 2+ ), successfully overcoming the typical trade‐off between luminescence intensity and stability. By using stearic acid (SA), the optimized RLSO: Eu 2+ @SA sample maintained 92.6% of its initial emission intensity and exhibited remarkable moisture resistance—an eightfold improvement over the unmodified phosphor. Mechanistic studies, combining (quasi)in situ structural and microscopic characterization with density functional theory (DFT) calculations, confirm that a hydrophobic SA layer forms through covalent bonding on the phosphor surface. This layer effectively suppresses water adsorption and diffusion, thereby inhibiting the hydrolytic phase transition. The strategy also demonstrates good universality with other modifiers, offering a generalizable framework for designing environmentally robust luminescent materials through controlled surface engineering.
ABSTRACT With the rapid miniaturisation and integration of electronic devices, efficient thermal management has become critically important. Boron nitride (BN)‐polymer composites have attracted extensive attention owing to their high thermal conductivity and electrical insulation properties. However, the interfacial thermal resistance between BN and the polymer matrix limits their performance. Consequently, overcoming this bottleneck through interface engineering has emerged as a key research focus. This review systematically examines the current progress in BN‐polymer composites from the perspective of interface engineering. First, the phonon‐mediated heat transfer mechanism and the bottleneck of interfacial thermal resistance are analyzed. Subsequently, various interface engineering strategies are classified according to the forms of interfacial interaction between BN and the polymer. These strategies include covalent bonding, non‐covalent interactions, and physical morphology control. In addition, defect engineering is discussed as an emerging perspective, offering insights into interface design. The effectiveness of the above strategies in establishing continuous thermal conduction pathways and enhancing the performance of the composites is evaluated. Finally, application prospects are summarized and future research directions are proposed.
ABSTRACT Hard carbon anodes for sodium‐ion batteries (SIBs) show promising application potential because of their wide raw material availability and high sodium storage capacity. However, their complex microstructure leads to unclear and controversial sodium storage mechanisms, which significantly hinders further improvement in electrochemical performance. Although the sodium storage mechanisms are similar across different carbon materials, their contributions vary considerably due to differences in microstructure, resulting in diverse sodium storage behaviors. Compared with previous articles that focused on a single mechanism or characterization method, this review takes the sodium storage mechanism as the core bridge and key descriptor that links the microstructure and macroscopic properties. By systematically integrating physical characterization, in situ characterization, and electrochemical methods, this review aims to clarify the necessity of in‐depth research on the sodium storage mechanism of hard carbon. Furthermore, through a comparative analysis of the sodium storage behavior of special carbon materials, we further reveal how research on the sodium storage mechanism can, in turn, provide the guidance for material structure design. By employing the sodium storage mechanism as a key descriptor, we analyze and construct the intrinsic relationship between material structure and performance, thereby providing a new perspective and theoretical framework for the controllable preparation of hard carbon materials.
ABSTRACT Eu2+‐doped UCr4C4‐type phosphors have emerged as a highly promising class of materials for wide‐color‐gamut displays. However, their practical application is significantly hampered by poor moisture resistance. In this work, we address this critical challenge by developing a facile multi‐step coating protocol to enhance the humidity stability of the representative green phosphor RbLi(Li3SiO4)2: Eu2+ (RLSO: Eu2+), successfully overcoming the typical trade‐off between luminescence intensity and stability. By using stearic acid (SA), the optimized RLSO: Eu2+@SA sample maintained 92.6% of its initial emission intensity and exhibited remarkable moisture resistance—an eightfold improvement over the unmodified phosphor. Mechanistic studies, combining (quasi)in situ structural and microscopic characterization with density functional theory (DFT) calculations, confirm that a hydrophobic SA layer forms through covalent bonding on the phosphor surface. This layer effectively suppresses water adsorption and diffusion, thereby inhibiting the hydrolytic phase transition. The strategy also demonstrates good universality with other modifiers, offering a generalizable framework for designing environmentally robust luminescent materials through controlled surface engineering.
ABSTRACT Integrating photochromic and photoluminescence (PL) properties of halide perovskite glasses enables reversible luminescence modulation and expands their practical functionality. However, realizing photochromic halide perovskite glasses remains a significant challenge. Here, we report the fabrication of Cs4PbBr6‐containing perovskite quantum dot inorganic glasses using a melt‐quenching and subsequent thermal treatment process, which exhibit a reversible color transition between yellow and brown under alternating X‐ray irradiation and 532 nm laser bleaching. We demonstrate that the X‐ray–induced photochromism originates from the formation of color centers through electron trapping at oxygen vacancies in the borophosphate glass network, while the reversible PL modulation is governed by the synergistic effects of reabsorption and excitonic behavior. Moreover, we reveal that both the coloration contrast and PL intensity exhibit mono‐exponential dependencies on X‐ray irradiation dose, enabling dual‐mode X‐ray dosimetry and memory imaging. This work establishes a new strategy for integrating radiation sensitivity and reversible optical properties within a single halide perovskite glass, providing valuable insights for the design of multifunctional luminescent materials.
ABSTRACT Neuromorphic computing has emerged as a promising paradigm to overcome the energy inefficiency and data‐transfer bottlenecks of conventional von Neumann architectures by emulating the parallel and adaptive information processing of biological neural systems. To date, most neuromorphic hardware has relied on silicon‐compatible or narrow‐bandgap materials, which often face intrinsic trade‐offs among operating voltage, thermal stability, endurance, and multifunctionality. Wide‐bandgap semiconductors (WBGSs)—including Group III nitrides, gallium oxide, silicon carbide, and diamond—provide an alternative material platform enabled by their large bandgaps, strong polarization effects, diverse defect states, and compatibility with electronic and optoelectronic device architectures. This review surveys recent progress in WBGS‐based neuromorphic computing, with an emphasis on material‐enabled device physics rather than isolated demonstrations. Typical device concepts, including memristors, synaptic transistors, and neuronal devices, are systematically discussed together with their underlying resistive switching, charge trapping, polarization modulation, and optoelectronic mechanisms. Strategies for device integration and performance benchmarking are also addressed. Finally, remaining challenges and future research directions toward scalable and energy‐efficient neuromorphic systems based on WBGSs are outlined.
ABSTRACT The rapid improvement in the power conversion efficiency of perovskite solar cells has established them as a promising alternative to conventional photovoltaic technologies. Owing to their strong light absorption, tunable bandgap, solution processability, and lightweight nature, perovskite solar cells are particularly well suited for building‐integrated photovoltaic applications. This review summarizes the potential of perovskite solar cells for building‐integrated photovoltaic integration, with a focus on their implementation in semi‐transparent windows, colored facades, and flexible substrates. By enabling on‐site energy generation while preserving aesthetic and design flexibility, perovskite photovoltaics offer unique opportunities for urban energy systems. Finally, future research directions are outlined, focusing on materials and interface engineering, encapsulation strategies, and large‐area fabrication, which are essential for the practical deployment of perovskite solar cell–based building‐integrated photovoltaics in sustainable buildings.
ABSTRACT Beta‐phase gallium oxide (β‐Ga2O3) is a promising ultra‐wide bandgap semiconductor for high‐power electronics, where the optimal selection of Schottky electrodes enables the achievement of elevated Schottky barrier heights and markedly enhanced device performance. This study investigates the impact of Ni diffusion on the leakage current in (100) β‐Ga2O3 Schottky barrier diodes (SBDs). Devices were fabricated using electron beam evaporation for Ni and Au Schottky contacts on unintentionally doped single crystals, with Ti/Au ohmic back contacts. Electrical measurements showed Ni‐SBDs exhibit higher reverse leakage current (−0.65 mA/cm2 at −50 V) and lower Schottky barrier height (1.03 eV) compared to Au‐SBDs (−3.64 nA/cm2 at −50 V) and (1.41 eV). Cross‐sectional corrected scanning transmission electron microscopy (CS‐STEM) and electron energy loss spectroscopy (EELS) revealed Ni diffusion at the interface of metal and β‐Ga2O3, introducing oxygen vacancies that facilitate trap‐assisted tunneling and reduce barrier integrity. Emission microscopy (EMMI) localized leakage sites, which after KOH etching, corresponded to elongated etch pits. Geometric phase analysis (GPA) confirmed continuous strain beneath these pits. Magnetron‐sputtered Ni electrodes (Ni‐MS) amplified diffusion and defects, with voids as primary channels due to enhanced stress concentration. These results elucidate that Ni diffusion‐induced stress damage is the dominant mechanism for leakage under reverse bias, offering guidance for electrode optimization in β‐Ga2O3 power devices.
ABSTRACT Perovskite solar cells have achieved power conversion efficiencies exceeding 27%, positioning them among the most promising next‐generation photovoltaic technologies. However, the formation of high‐quality perovskite films remains challenging due to complex crystallization processes involving transient intermediate phases, composition‐dependent phase transitions, and depth‐dependent structural heterogeneity. Grazing‐incidence wide‐angle X‐ray scattering (GIWAXS) has emerged as an indispensable characterization technique for bridging microscopic structural evolution with macroscopic device performance. This review establishes the theoretical framework of GIWAXS geometry and highlights its unique capability for probing perovskite crystallization dynamics. Recent advances in GIWAXS studies are systematically summarized, including investigations of lattice orientation, compositional gradients, phase segregation, and impurity‐phase formation in perovskite thin films. In situ GIWAXS studies revealing crystallization pathways across diverse fabrication methods and low‐dimensional perovskites are then discussed. Emphasis is devoted to intermediate‐phase identification and modulation strategies enabled by additive engineering, cation design, and compositional optimization. Building upon the crystallization kinetics, the degradation mechanisms triggered by moisture, thermal stress, and light illumination are systematically reviewed. Finally, current challenges and future opportunities are critically examined, including the integration of GIWAXS with complementary characterization techniques and the establishment of standardized analysis protocols. These perspectives provide guidance for leveraging structural insights toward scalable manufacturing and commercialization of perovskite photovoltaics.
Abstract X‐ray imaging is foundational and urgent to biomedical diagnosis and industrial nondestructive inspections; however, conventional single‐dose approaches offer limited material specificity. Here, we present a deep learning–driven X‐ray imaging technique leveraging vapor‐deposited multicolor halide scintillation film stacks, enabling imaging and the systematic curation of a materials genome database. By coupling an Attention U‐Net with extreme Gradient Boosting, we further develop an end‐to‐end density regression system that outputs quantitative material information directly from chromatic images, realizing segmentation of circuit‐ and pixel‐level mapping from red/green/blue (RGB) values to densities, with an intersection over union of 81% and a root mean square error of ±0.622 g cm−3. The effectiveness has been demonstrated through segmentation of complex circuit boards and 3D reconstruction of material density distributions. This work delivers a reliable and intelligent material platform and technique for chromatic X‐ray imaging, offering enhanced material discrimination and nondestructive testing capabilities.
Luminescent ion-doped materials have gained extensive attention and application in both scientific research and practical fields. The integration of luminescent ions with nano-structured semiconductors has emerged as a highly promising development trend to meet the growing demands for advanced functional systems. This review focuses on luminescent ion-doped nano-structured semiconductors, including 0D, 1D, and 2D systems. It elaborates on the pivotal roles that luminescent ions play within these materials. Subsequently, the article offers a comprehensive overview of the application scenarios and effects of various luminescent ions doped into nano-structured semiconductors. Additionally, the article systematically discusses the coupling mechanisms between luminescent ions and nano-structured semiconductors, as well as the synergistic effects of codoping. We also present the specific applications of these materials in the information and functional materials fields. Lastly, this work addresses the current challenges faced in this research area and outlines the frontier development directions, providing valuable insights for future exploration.
Organic field-effect transistors are widely recognized as key enabling components for low-cost, lightweight, and flexible electronic systems. Despite substantial research progress, a critical barrier to their commercialization remains the fragmented understanding between materials chemistry, device physics, and manufacturing. In contrast to reviews that focus on isolated aspects, this research provides a distinctive integrative perspective, deliberately linking fundamental material properties with device-level performance and operational stability. This approach is essential for addressing persistent issues such as environmental instability, significant contact resistance, and performance non-uniformity. We highlight recent progress in both p-type and n-type semiconductors, novel device architectures, and the underlying mechanisms of contact resistance. Particular emphasis is placed on interface engineering and structural optimization to mitigate parasitic losses and enhance operational stability. By bridging molecular design with contact engineering, this review outlines clear pathways toward reliable, high-performance OFET for next-generation flexible electronics.
Serum creatinine (Scr) and blood urea nitrogen (BUN) are key biomarkers for assessing human kidney function. Nevertheless, the quantitative and simultaneous detection of these two markers with high efficiency remains a challenge. To address this, a highly sensitive surface-enhanced Raman scattering (SERS) substrate, composed of carbonized photoresist embedded with silver nanoparticles (C-AZ/Ag NPs), was developed for the efficient simultaneous detection of Scr and BUN. In the experiments, AZ5214E and silver nitrate (AgNO 3 ) were first mixed in acetonitrile to prepare the precursor solution for UV photolithography. Subsequently, a porous anodic aluminum oxide coated with a thin chromium film served as a mask to transfer the pattern onto the substrate through UV lithography, and the feature size was tuned by controlling the development time. After that, the patterned substrate was carbonized under an argon atmosphere to yield the final C-AZ/Ag NPs SERS platform. Using rhodamine 6G as a Raman reporter, the optimized C-AZ/Ag NPs substrate achieved an enhancement factor of 1.27 × 10 8 and a detection limit down to 10 −9 M. Moreover, it exhibited good spectral uniformity with a relative standard deviation of 7.59%. Finally, clinical serum samples were tested for creatinine and urea nitrogen using the C-AZ/Ag NPs substrate and cross-validated against colorimetric assays. It demonstrated that the developed SERS platform accurately reproduced the trends of Scr concentration, which show significant potential for future clinical applications.
Wide-bandgap perovskite solar cells (WBG-PSCs) are the core devices to break through the efficiency limit of single junction cells by constructing tandem devices. However, recent studies have shown that the poor quality of perovskite films due to uncontrolled rapid crystallization leads to severe open-circuit voltage ( V OC ) loss, phase separation, and high defect density. These problems seriously restrict the performance and stability of the device. This review provides a comprehensive understanding of the defects caused by the rapid crystallization of wide-bandgap perovskite film, and elucidates their effects on device stability and V OC loss from the mechanism. Subsequently, the latest progress of crystallization regulation strategies was systematically summarized, and the underlying mechanism of crystallization regulation was analyzed. Finally, prospects and challenges are proposed to provide insights for future research and technological progress.
Recent advancements in integrating gallium nitride (GaN) with two-dimensional (2D) materials have unlocked new frontiers in photodetector research. Combining wide-bandgap GaN with optoelectronically tunable, van der Waals-compatible 2D materials enables control of interfacial phenomena and novel photodetection functionalities. This review presents a comprehensive overview of the recent progress in GaN/2D material-based photodetectors, with a focus on device mechanisms and performance enhancements. We explore both transfer and in situ growth techniques, evaluating their impacts on the interface quality and material compatibility. Moreover, we highlight how band alignment and interlayer coupling influence the optoelectronic behavior of various device architectures. Representative heterostructure combinations exemplify the functional diversity enabled by tailored interface design. Additionally, we present their potential for diverse practical applications and suitability for integration with existing devices. Finally, we identify current challenges in interface engineering, carrier dynamics, and scalable integration and propose future directions toward high-performance intelligent optoelectronic systems based on GaN/2D heterostructures.
There has been rapid and continuous development in organic semiconductors for photovoltaics over the past decade, and power conversion efficiencies ( PCEs ) of nearly 21 % have already been achieved. Organic semiconductors not only offer competitive PCEs but also semitransparency, color tunability, lightweight, solution-processability, mechanical stretchability, synthetic flexibility, and most importantly, biocompatibility. This combination of properties opens up a range of unconventional applications beyond traditional solar farms, which include building-integrated installations, smart windows, agrivoltaics, indoor photovoltaics, wearable electronics, and thermoregulatory devices. Hence, initial impressions toward commercial feasibility that are conventionally based on traditional photovoltaic applications could be misleading. This review highlights that organic semiconductors may have already surpassed existing photovoltaic materials in certain types of utilization. Accordingly, the core ideas of emerging unconventional photovoltaic applications, their latest developments, current challenges, and key performance factors beyond PCEs are covered herein. Overall, this mini-review provides practical perspectives, driving more research attention toward other more up-to-date photovoltaic applications with modern technologies and architectural motifs.
Lab-scale perovskite solar cells have shown ever-increasing power conversion efficiency in recent years. However, practical deployment is hindered by inferior device performance when upscaling from lab-scale cells to large-area modules. One such limitation originates from the poor thin-film quality of large-area modules. As a result, it is imperative to address the difficulties in fabricating high-quality perovskite absorbers. Herein, we analyze the fundamental challenges existing in large-area perovskite film fabrication, covering everything from crystal nucleation to thin-film growth and passivation. We then discuss a feasible roadmap to enhancing large-area modules through precursor chemistry strategies. These strategies encompass precursor design (solvent selection and additive engineering), drying process modulation (uniform drying, wide processing window, and high throughput), and annealing optimization (moderate annealing and thermal management). In addition, we examine the strengths and weaknesses of scalable deposition methods used in the present upscaling devices. This work provides strategic insights and practical guidelines for minimizing efficiency loss and accelerating the commercialization of perovskite photovoltaics.
