A 3D RRAM Using Stackable 1TXR Memory Cell for High Density Application

This paper reports a novel 3D RRAM concept using stackable multi-layer 1TXR memory cell structure for future high density application. Using an 8-layer metal of stacked 1TXR (X = 64) as an example, the density is over 260% higher than that of the conventional single layer 1T1R structure. Corresponding operation algorithm is put forward for the first time, which can inhibit mis-write and mis-read caused by sneaking current and reduce power consumption.