Flexible Technological Process for Functional Integration

E Imbernon,JL Sanchez,P Austin,M Breil, O Causse,B Rousset,F Rossel

International Semiconductor Conference (CAS)（2001）

CNRS

被引用10|浏览4

摘要

In this paper, a flexible technological process suitable for the development of complex integrated power structures based on the functional integration mode is presented. This technological process is based on a succession of basic technological steps corresponding to the fabrication of IGBT devices and compatible specific steps supporting more complex functions

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关键词

MOS-controlled thyristors,insulated gate bipolar transistors,integrated circuit technology,power MOSFET,power integrated circuits,IGBT devices,MOS-thyristor devices,complex integrated power structures,flexible technological process,functional integration mode,power IC fabrication