Памяти Е.М. Круглова И Филимонова В.В. Квантовый Выход Кремниевого Лавинного Фотодиода В Диапазонах Длин Волн 114-170 И 210-1100 Nm

Avalanche silicon photodiode have been developted for near ir, visible, UV and VUV light range. External quantum efficiency have been studied in 114 - 170 abd 210 - 1100nm range. It is demonstrated that photodiode reach from 29 to 9300 electrons/photon on 160 nm with bias voltage of 190 and 303 v respectively.