The paper presents the results of a study on the distribution of lithium in a solid-state thin-film lithium-ion battery using the Rutherford backscattering spectrometry (RBS) method. The analysis employs He+ ions with an energy of 1.8 MeV, scattered at an angle of 165° with normal incidence to the surface. Based on the energy loss of scattered ions, we determine the concentration of Li ions in the battery layers in both charged and discharged states. The study shows that the Li-concentration values obtained through the RBS method and the galvanostatic-measurement method coincide, provided that the specific stopping cross section for lithium εLi in the anode layer is half of that in the single-element substance.

The work examines the effect of crystallization conditions of vinylidene fluoride (VDF) and tetrafluoroethylene (TFE) copolymer (F-42) from aprotic solvents (dimethyl sulfoxide (DMSO) and dimethylformamide (DMF)) under isothermal conditions at temperatures of 60, 90, and 150°C on the phase composition of the films. The content of crystalline phases in F-42 films is analyzed using Fourier-transform infrared spectroscopy, Raman spectroscopy, and X-ray phase analysis. The effect of nanographite fillers on the crystalline phases of the copolymer films is also studied. Nanographite fillers alter the crystalline structure of the polymer piezoelectric films and their piezoelectric properties, forming electroactive β and γ phases with high content during crystallization from 5-wt-

The results of an experimental study of changes in the chemical composition and surface topography of two-component AlSi thin films with an initial Si concentration of 1

We investigate the processes of microrelief formation on a Si(100) surface under irradiation with a Ga+-ion beam with an energy of 30 keV and a fluence of D = 1.25 × 1018–2 × 1019 cm–2 at incident angles of θ = 30°–85°. Within the angular range of θ = 40°–70°, a faceted wavy relief forms on the Si surface, while at θ = 30°, a sinusoidal relief develops. An experimental dependence of the periodic structure wavelength as a function of irradiation time λ(t) t n, where n = 0.33–0.35, is obtained. The average values of relief propagation velocities and their direction relative to the incident ion direction are determined for θ = 30° and 40°, amounting to –5.3 ± 0.6 and –6.3 ± 0.6 nm s–1, respectively. The results are discussed in detail within the framework of existing models of wavelike surface relief formation under ion bombardment.

We discussed the development of cathodic electrochemical exfoliation of graphite, accompanied by a plasma discharge with a voltage of 200V DC, in an aqueous solution of various electrolytes. The method of cathodic electrochemical exfoliation of graphite has established itself as a promising eco-friendly industrial method for producing nanographite with subsequent grinding by ultrasound into low-layer graphene (FLG). Cathodic exfoliation allows selective doping of nanographite oxygen atoms.

A technology was developed for cathodic electrochemical exfoliation of graphite by a plasma discharge at a DC voltage of 200 V in an aqueous solution of various electrolytes. Cathodic electrochemical exfoliation of graphite gave a good account of itself as a promising environmentally friendly industrial method for producing nanographite with subsequent grinding by ultrasound into few-layer graphene (FLG). Cathodic exfoliation allows selective doping of nanographite with oxygen atoms.

The combination of reduced-activation ferritic–martensitic steels (RAFM) and tungsten is suggested for plasma-facing components in future fusion reactors, but joining these materials is challenging. One promising method is a brazing technique that uses a Ta interlayer and a fully reduced activation brazing alloy, TiZr4Be. The initial microstructure of the Rusfer/TiZr4Be/Ta/TiZr4Be/W joint and transformations caused by exposure to D2 gas at elevated temperatures and a pressure of 1 Pa were assessed using electron backscatter diffraction (EBSD), synchrotron X-ray diffraction analysis and secondary ion mass spectrometry. The joining layer was the main center of deuterium accumulation, but there were no changes in the microstructure after D2 exposure at 300 °C. The total D retention after D2 exposure at 600 °C was lower, but it was concentrated in the W/TiZr4Be/Ta seam, and the formation of an additional ZrFe2D2.66 phase was observed.

Experimental studies of the germanium surface morphology development under irradiation with a focused gallium ion beam at different angles of incidence and fluences are presented. It is shown that a nanoporous structure formes in the near-surface layer starting with a dose of 5.10(15) cm(-2).This leads to the formation of a sponge- like morphology with a wall thickness of about 20 nm and a depth up to 150 nm with an increasing dose. Changing the ion beam incidence angle with respect to the surface normal leads to a tilt of the pores walls in the collinear direction.

masha_19957@mail.ru Abstract. Influence of the initial Si surface state on the rate of ripple nucleation under bom-bardment with low-energy O2+ ions was investigated. It was found that the creation of a defect area in the Si near-surface layer or the creation of the initial surface relief by ion bombardment with a focused Ga+ ion beam facilitates a significant acceleration of the ripple nucleation on the Si surface during subsequent irradiation with an O2+ ion beam.

The silicon surface was irradiated with 30 keV gallium ion beam at incidence angles from 0 to 50 and fluences from 6middot10(16) to 5middot10(18) cm(-2). Surface topography was investigated by scanning electron microscopy. It was found that one of four types of a relief can be formed on the silicon surface depending on the ion beam incidence angle and these fluences. Pattern formation starts with fluences of ~2middot10(17 )cm(-2). The peculiarities of a relief evolution can be explained by the angular dependences of silicon sputtering with gallium ion beam and the possible existence of implanted gallium in the near-surface layer in the form of precipitates.

The processes of microrelief formation on the Si(100) surface under irradiation with a 30-keV Ga+-ion beam with doses of D = 6 × 1016–4 × 1018 cm–2 at incidence angles of θ = 0°–50° are studied. It is established that a ripple structure is formed in an angular range of θ = 25°–35° at D = 2 × 1017–2 × 1018 cm–2. However, a well reproducible ripple structure is observed at incidence angles of θ = 30° ± 2° starting from irradiation doses of 2 × 1017 cm–2. As D increases from 2 × 1017 to 2 × 1018 cm–2, the wavelength and the amplitude increase from ~150 to ~400 nm and from ~30 to ~70 nm, respectively. At D > 2 × 1018 cm–2, the ripple structure is destroyed. The features of the formation of such a Si surface relief using a Ga+-ion beam are a rather narrow angular range in which the relief is formed and the value of the irradiation dose at which its nucleation begins. The reasons for these features can be precipitates of implanted Ga in the Si surface layer and the angular dependences of the sputtering yield and composition of the Si surface layer irradiated with a Ga+ ion beam.

X-ray diffractometry, energy-dispersive X-ray analysis, Raman spectroscopy, and electron microscopy are used to study the chemical, structural, and morphological properties of exfoliated nanographite and nanographite films created via electrophoresis. The defectiveness of exfoliated nanographite is estimated. The obtained data show an increase in the calculated values of the density of defects in exfoliated graphite, compared to that of the initial foil.

A technological procedure is developed for producing highly organized porous alumina. The procedure yields a foil surface with a roughness of 100 nm. Porous anodic aluminum oxide samples are prepared via the double electrochemical anodization of the resulting foil. The samples are studied via scanning electron microscopy, and statistical data on their pore sizes are collected. Samples of porous anodic alumina with an average pore diameter of 60 nm are obtained.

A mathematical model of surface erosion in a course of a trench formation by translationally moving ion beam of a Gaussian shape is considered. The solutions obtained in self-similar variables describe the states of equilibrium of the boundary value problem and their dependence on the sputtering parameters. It is shown that there are three parameter areas in which only smooth, smooth and discontinuous and only discontinuous solutions exist. The plots of the surface profiles corresponding to three possible types of solutions are given. Formulas for calculating the profile of etching trenches and examples of calculating profiles corresponding to smooth and discontinuous solutions are given.

The process of microrelief formation on Si (100) surface under 30 keV Ga+ ion beam bombardment with doses 2⋅1017 - 4⋅1018 ion/cm2 at incident angles θ = 0 - 50° was studied. It was found that wave-like structures form on the surface at θ = 25° - 35° and doses 6⋅1017 - 2⋅1018 ion/cm2. The nice ripple formed at θ = 30±2° incident angles and irradiation dose 1018 ion/cm2.

We present an experimental investigation of the energy spectra of the charged particles emitted from polycrystalline copper under argon and xenon cluster ion irradiation. Positive secondary particles have significantly lower energies than in the case of sputtering with atomic argon. The spectra of the charged particles emitted under xenon cluster bombardment are systematically narrower than the corresponding ones obtained under argon cluster bombardment. The observed regularities can be explained in terms of energy transfer form a cluster to the target.

Energy spectra of charged particles emitted from a polycrystalline copper target bombarded with argon and xenon cluster ions have been experimentally studied. Positive particles sputtered with gas cluster ions possess significantly lower energies than do particles sputtered with atomic argon. The spectra of charged particles emitted under bombardment with xenon cluster ions are systematically narrower than analogous spectra obtained under bombardment with argon clusters. The discovered laws can be explained from the standpoint of features of energy transfer from the cluster ion to the target.

The electrochemical exfoliation of graphite is studied via X-ray diffractometry and Rutherford backscattering spectrometry. It is shown this process allows graphite particles to be obtained with virtually half the normal crystallite size, and thus the number of graphene layers in them. The effect the parameters of exfoliation have on the chemical composition of the resulting graphite particles is established.