Reactions between the model compound N-1,4,5-trimethyl-1H-imidazole-3-oxide and electron-deficient olefins including 2-(4-methoxybenzylidene)malononitrile, (E)-ethyl-2-cyano-3-(4-methoxyphenyl)acrylate, 2-benzoyl-3-(4-methoxyphenyl)acrylonitrile, and 5-(4-methoxybenzylidene)-2,2-dimethyl-1,3-dioxane-4,6-dione were theoretically studied in terms of the density functional theory. It was demonstrated that the reactions can proceed either by the 1,3-dipolar cycloaddition mechanism or by the Michael addition mechanism depending on the type of electron-withdrawing substituents in the olefin molecule. The reaction pathways were calculated and the intermediate structures were determined.

The effect of low-energy proton irradiation on the pulse characteristics of silicon n+-p-p+ structures is analyzed. It is shown that irradiation with protons with an energy of 180 keV and a dose of 1015 cm−2 creates a region with an effective lifetime of 5.5·10−8 s in the space charge region of the n+-p junction. Such elements can be used to create high-speed photodiodes with an operating modulation frequency of 18 MHz.

A number of europium(III), terbium(III), and gadolinium(III) coordination compounds with N-substituted phthalamic acids were synthesized. Composition and structure of the ligands and the obtained complex compounds were confirmed by NMR and IR spectroscopy and thermogravimetric analysis. It was found that terbium(III) and europium(III) coordination compounds with N-phenylphthalamic acid possess the most pronounced luminescence.

New Eu3+ and Tb3+ complex compounds [Ln(H2O)2L2]Cl∙H2O were synthesized on the basis of coumarin-3-carboxylic acid and its derivatives. Composition and structure of the ligands and the complex compounds were confirmed by NMR and IR spectroscopy, thermogravimetry, and complexometric titration. Europium(III) coordination compounds with coumarin-3-carboxylic and 6-nitrocoumarin-3-carboxylic acids show effective luminescence.

Chelate complexes BeL2 and ZnL2 with 2-[5-(2,4,6-trimethoxyphenyl)-1,3,4-oxadiazol-2-yl]phenol (HL) were synthesized. Their compositions were confirmed by thermogravimetric and IR spectroscopic analyses. Thin films of HL and BeL2 were spin coated on a glass substrate. The spectral and luminescent properties of the obtained compounds in solutions, solids, and films were studied. The optimal conditions for obtaining thin films were found. Their morphology was studied.

Irradiation with low-energy protons leads to a change in the electrophysical, optical, and other properties of the surface region of semiconductor structures, which creates additional possibilities for modifying semiconductor devices. The work is devoted to the study of the effect of radiation defects created by low-energy protons at a sample temperature of 83 K on the properties of two-sided silicon photovoltaic structures with a diffusion n^+-p junction. Samples of n^+-p-p^+ type were irradiated with a flux of protons with an energy of 40 keV or 180 keV and a dose of 1015 cm^-2. To explain the observed regularities in the variation of the parameters of the current-voltage characteristics and the transmission coefficients, the distribution of the average number of interstitial silicon, vacancies, divacancies, and disordering regions created under these conditions on the unit projective path length by one proton in the diffusion layer and the space charge region of the n^+-p junction was calculated. It is shown that protons with an initial energy of 40 keV predominantly change the physical properties of a layer with a high concentration of donors, and protons with an initial energy of 180 keV are properties of the space-charge region in a layer containing acceptors. The number of radiation defects in the maximum spatial distribution in the n-region is much smaller than in the p-region.

Irradiation by low-energy products leads to a variation in the electrical, optical, and other properties of the surface layer of semiconductor structures, which gives additional possibilities to modify semiconductor devices. This work is devoted to investigating the influence of radiation defects induced by low-energy protons at a sample temperature of 83 K on the properties of double-sided silicon photoelectric structures with a diffusion n+–p junction. Samples of the n+–p–p+ type are irradiated by a proton flux with a dose of 1015 cm–2 and energy of 40 or 180 keV. To explain the observed regularities of varying the parameters of the current–voltage characteristics and transmission coefficients, the distribution of the average number of interstitial silicon, vacancies, divacancies, and disordered regions formed under these conditions per length unit of the projected path by one proton in the diffusion layer in the space-charge region of the n+–p junction is calculated. It is shown that protons with an initial energy of 40 keV preferentially vary the physical properties of the layer with a high concentration of donors, while protons with an initial energy of 180 keV vary the properties of the space-charge region in the layer containing acceptors. The number of radiation-induced defects at the maximum of the spatial distribution in the n-type region is much smaller than in the p-type region.

Thin films (~100 nm) of complexes of terbium(III) with 2-benzoylbenzoic, 2-(4-chlorobenzoyl)benzoic, and 3,4-diethoxybenzoic acids were obtained. By means of the data from electron and optical microscopy it was found that the complexes crystallize during formation a film. In order to improve the surface quality of the films, the complexes were doped into a poly-(N-vinylcarbazole) polymer matrix in ratios between 1:1 and 10:1. On the basis of the dependence of the integral luminescence intensity of the films on the mass ratio of the components it is supposed that the polymer takes part in luminescence excitation of the complexes.

New complex compounds LnL 3 · n H 2 O ( n = 5–10) have been synthesized on the basis of Eu 3+ , Gd 3+ , and Tb 3+ salts and quinoline-4-carboxylic acid derivatives obtained via the Pfitzinger reaction. Composition and structure of the ligands and the resulting complex compounds have been confirmed by NMR and IR spectroscopy, thermogravimetry, and complexometric titration. Europium complex with 1,2,3,4-tetrahydroacridine-9-carboxylic acid has exhibited efficient luminescence.

The luminescent properties of complex compounds of europium(III), gadolinium(III), and terbium(III) with dodecyl-, 4-octadecyloxybenzoic acids have been studied. According to the phosphorescence spectra of the gadolinium(III) complexes measured at 77 K, the energies of the excited triplet states of the anions of the used acids (T 1 ) were determined. Based on the luminescence mechanism, it was established that intramolecular energy transfer from the organic ligand to the lanthanide ion is effective for the europium(III) complexes. To increase the luminescence intensity of the terbium(III) complex compounds, compounds of the composition LnL 3 Phen were obtained, where Phen is 1,10-phenanthroline. Using experimental spectra, an increase in the integrated luminescence intensity of the Tb 3+ ion compared to TbL 3 was shown.

Europium(III) and terbium(III) complexes with 4-n-octyloxybenzoic acid of the composition LnL3 were synthesized and their luminescent properties were studied. It was established that the luminescence intensity of the TbL3 complex in the visible region is much higher than that of EuL3. Langmuir monolayers of these compounds on the water subphase and Langmuir–Blodgett films on solid substrates were prepared. The morphological characteristics of the latter were studied. The results obtained indicate good prospects for application of these compounds in the design and fabrication of planar photonic and optoelectronic devices.

The thin films (~100 nm) of complex compounds of terbium(III) with 2-benzoylbenzoic, 2-(4-chlorobenzoyl)-benzoic and 3,4-diethoxybenzoic acids have been obtained. Using the data of electron and optical microscopy, it is found that the complex crystallizes during the film formation. In order to improve the surface quality of the films, the complexes have been doped into a poly-(N-vinylcarbazole) polymer matrix in ratios from 1:1 to 10:1. Based on the dependence of the luminescence integral intensity of the films on the mass ratio of the components, a participation of the polymer in the luminescence excitation of the complexes in the film is supposed.

The irradiation of semiconductor structures with low-energy protons is used to control changes in their properties at a depth ranging from 0.1 to 1000 μm. Devices manufactured from such structures have high sensitivities to changes in the state of the surface region. The paper is dedicated to studying the effect of radiation-induced defects produced by low-energy protons in a heavily doped diffusion region on the properties of Si structures with an n + ‒ p junction. The structures are irradiated with a flux of protons with an energy of 40 keV and a dose of 10 15 cm −2 at a sample temperature of 83 and 300 K. The distributions of the average number of interstitial Si, vacancies, and divacancies produced by one proton under these conditions per length unit of the projective range in the diffusion layer of an n + ‒ p junction are calculated. It is shown that the number of radiation-induced defects in the distribution maximum at a depth of 0.39 μm in a layer with n -type conductivity at a sample irradiation temperature of 83 K is significantly less than that at 300 K. This conclusion is confirmed by the results of studies of electrophysical and optical properties of irradiated n + ‒ p ‒ p + structures.

Europium(III) and terbium(III) fluoride nanoparticles modified with citric, anthranilic, benzoic, salicylic, and acetylsalicylic acids have been obtained by means of sorption from solution and modification in statu nascendi. The shape and size of the particles have been determined by scanning electron microscopy. The luminescence of the samples was studied and it has been established that terbium fluoride nanoparticles modified with acetylsalicylic acid exhibits the highest luminescence intensity.

The electrochemical synthesis of anhydrous terbium(III) complex compounds TbL3 and Tb2L3 with several aromatic and heterocyclic carboxylic acids has been performed. Thermal stability of the synthesized complexes has been studied by means of thermogravimetry, and terbium(III) 4-tert-butylbenzoate has been found the most thermally stable (up to 400°C). Luminescent properties of the obtained compounds have been studied, and the terbium(III) complex with 2,3-pyridinedicarboxylic acid has exhibited the most efficient luminescence.

Luminescent properties of europium(III), gadolinium(III), and terbium(III) complexes with 4-dodecyl- and 4-octadecyloxybenzoic acids were studied. Energies of excited triplet states of the acid anions (T1) were determined from phosphorescence spectra of the Gd(III) complexes measured at 77 K. The luminescence mechanism found that intramolecular energy transfer from the organic ligand to the lanthanide ion was effective for the Eu(III) complexes. Complexes of composition LnL3Phen, where Phen is 1,10-phenanthroline, were prepared to increase the luminescence intensity of the Tb(III) complexes. Experimental spectra showed that the integrated luminescence intensity of Tb3+ in TbL3Phen increased as compared with TbL3.