The vacuum thermal evaporation method was used to produce Sb2(SxSe1–x)3 films from powders of precursor binary compounds, Sb2S3 and Sb2Se3, at substrate temperature 300°C. The effect of the elemental composition ratio S/(S + Se) on the optical and electrical properties of Sb2(SxSe1–x)3 films was studied. The band gap width of Sb2(SxSe1–x) films increases with an increase in the sulfur concentration. The prepared films feature low Urbach energies indicating low-defect structure. The temperature dependence of the resistance indicated the presence of deep-lying levels in the range 0.5–0.8 eV depending of the S/(S+Se) atomic concentration ratio. These results indicate the feasibility of producing effective solar cells containing Sb2(SxSb1–x)3 obtained by means of thermal evaporation of powders of Sb2S3 and Sb2Se3.

термического испарения получены высококачественные кристаллические пленки твердого раствора Sb2(SxSe1-x)3 из порошков бинарного соединения Sb2S3 и Sb2Se3 на стеклянных и стеклянных подложках с покрытием молибденового слоя при температуре подложек 300°С. С помощью энергодисперсионной рентгеновской спектроскопии установлено, что полученные пленки Sb2(Sx,Se1-x)3 имеют соотношение компонентов Sb/(S+Se) близкое к стехиометрии, распределение всех компонентов (Sb, S, Se) твердого раствора по поверхности синтезированных тонких пленок однородно. Результаты сканирующей электронной микроскопии и рентгеноструктурного анализа показали, что все пленки имеют орторомбическую структуру с преимущественной ориентацией (hk1), при этом размеры кристаллитов составляют 0.25÷6 мкм, увеличение соотношения атомарных концентраций S/(S+Se) приводит к изменению формы кристаллитов. Исследование пленок с помощью атомно-силового микроскопа (АСМ) показывает, что среднеквадратическая шероховатость увеличивается с увеличением S/(S+Se).

Sb2Se3 thin films were obtained by chemical-molecular beam deposition on soda-lime glass from high purity Sb and Se precursors at 400 degrees C, 450 degrees C and 500 degrees C substrate temperature. Due to the precise control of the Sb/Se ratio, Sb2Se3 thin films with stoichiometric composition were obtained, which was confirmed by energy-dispersive X-ray microanalysis. The effect of substrate temperature on morphology, structure and optical properties of Sb2Se3 thin-films were studied by scanning electron microscopy, atomic force microscopy, X-ray diffraction, Raman spectroscopy and from the analysis of absorption and transmission spectra of the films. Average diameters and lengths of Sb2Se3 rods deposited at different substrate temperature were the range of 0.5-2 mu m and 1-4 mu m respectively which was grown at different slope and compactness to the substrate. The optical bandgap of the films was determined from the transmission and reflection spectra and 1.16, 1.21 and 1.26 eV band gap energies were observed for 500, 450 and 400 degree celsius substrate temperature Sb2Se3 thin films respectively.

Using the thermal evaporation method, thin crystalline films of Sb-2(SxSe1-x)(3) are produced at the substrate temperature of 300 degrees C. The mixed powders of the Sb2S3 and Sb2Se3 is used as a source material. The influence of the S/Se component ratio on the morphology and structural characteristics of Sb-2(SxSe1-x)(3) thin films is investigated. As demonstrated by the results of X-ray energy dispersive spectroscopy, the formed films of Sb-2(SxSe(1-x))(3) have a components ratio close to the stoichiometry. Besides, Morphological and structural analyses reveal significant differences in the surface morphology of Sb-2(SxSe1-x)(3) thin film absorbers, indicating that the properties of the films vary as a function of the S/Se composition ratio.

In this work, SbxSy thin films were grown on glass substrates for the first time using the chemical molecular beam deposition method in the atmospheric pressure hydrogen flow. The structural, morphological and optical properties of SbxSy thin films grown at different substrate temperatures of 300 °C, 350 °C, 400 °C and 450 °C were studied. XRD results showed that the SbxSy thin films grown at different substrate temperatures have an orthorhombic crystal structure. Phase analysis indicated a weakening of Sb-S bonds with increasing substrate temperature. Also, the grain sizes of all obtained thin films ranged from 0.5 to 3 µm. The increase in temperature caused the grains to grow and the spaces between them to increase. Optical experiments reveal that as the substrate temperature increases, the optical band gap energy of the films increases from 1.52 eV to 1.73 eV, as well as an increase in the Urbach energy from 0.11 eV to 0.44 eV. The experimental values of the band gap for Sb2S3 films are near the optimum value for photovoltaic conversion.

Antimony sulfide selenide, Sb2(SxSe1-x)3 (x = 0-1), is a tunable bandgap compound that combines the advantages of antimony sulfide (Sb2S3) and antimony selenide (Sb2Se3). This material shows great potential as a lightabsorbing material for low-cost, low-toxicity, and highly stable thin-film solar cells. In this study, Sb2(SxSe1x)3 thin films were deposited by chemical-molecular beam deposition on soda-lime glass substrates using antimony (Sb), selenium (Se), and sulfur (S) precursors at a substrate temperature of 420 degrees C. By independently controlling the source temperatures of Sb, Se, and S, Sb2(SxSe1-x)3 thin films with varying component ratios were obtained. Scanning electron microscopy revealed significant changes in the surface morphology of the films depending on the elemental ratio of [S]/([S]+[Se]). Crystallites shaped like cylindrical microrods with d = 0.5-2 mu m diameter and l = 3-5 mu m length were grown at a certain angle on the substrate. X-ray diffraction patterns showed peaks corresponding to the orthorhombic structures of Sb2Se3, Sb2S3 and their ternary compounds Sb2(SxSe1-x)3. The optical characterization revealed a high absorption coefficient of 105 cm(-1) in the visible and near-infrared light regions. The band gap of the compounds changed almost linearly from 1.2 eV to 1.36 eV with a change in the ratio of elements [S]/([S]+[Se]) from 0.03 to 0.08.

In the present study, the effect of annealing and Ar-plasma treatment on structural, morphological and optical properties of thermally evaporated β -In 2 S 3 thin films has been investigated. During Ar-plasma treatment, some interesting results were observed that an array of metallic indium nanostructures was formed over In 2 S 3 film surface with quasi-spherical or spread droplet shapes of an average size of 20–100 nm in the lateral direction and a height of less than 70 nm. Here, the Ar-plasma treatment serves as a new strategy for the self-formation of metallic indium nanostructures over the film surface. Further, the optical absorption of In 2 S 3 films has been enhanced from 10 4 to 10 7 cm −1 while the optical band gap energy decreased from 2.71 eV to 2.50 eV after Ar-plasma treatment. The metallic nanostructures loaded on semiconductor surface can act as an electron trap that can effectively prevent the recombination of photo-generated electron-hole pairs.

Sb x Se y thin films were obtained from precursor of pure antimony and selenium granules evaporated in the temperature ranges from 980 to 1025°C for Sb and 415 to 470°C for Se by chemical molecular beam deposition method on glass substrates. It was found that the films consist mainly of the Sb x Se y phase and have a different Sb/Se ratio in the range from stoichiometry to 0.89. Controlling the fraction of components allows to change the orientation of crystallites, which, in turn, leads to changes in electrical conductivity.

Sb2Se3 films were obtained by chemical molecular beam deposition on soda-lime glass substrates. As a source material, 99.999% purity semiconductor Sb2Se3 pieces were used. Their evaporation and the substrate temperature were maintained at 830.Co1000. C and 500.C, respectively. Using scanning electron microscopy, Xray diffraction analysis, and Raman scattering, the influence of the temperature of the source of the binary compound Sb2Se3 on the chemical composition, morphology, and structure of the synthesized films of Sb2Se3 films was studied. It is observed that the films have a crystalline (orthorhombic) structure with compactly located crystallites having the form of rods with an average size: l = 5o10 mu m (length) and d = 1o2 mu m (diameter). An analysis of the dependency functions (ah.)2 = f(h.) showed that the Sb2Se3 films obtained at temperatures.source=900.C and.source=840. C have direct transitions with an optical band gap.g=1.04 eV and.g=1.12 eV, respectively. The electrical conductivity of the films, changed within 1.03 center dot 10 5o4.13 center dot 10 5 (Om center dot cm) 1 depending on the ratio of Sb/Se atomic concentration.

The effect of ion-plasma treatment on the physical properties of the surface of GaTe crystals is investigated. Gallium telluride crystals were grown by vertical zone melting under the pressure of an inert argon gas of 10.0 MPa at a temperature of 1000 °C and a zone displacement velocity of 9 mm/hr. The treatment was carried out in argon plasma in a high-density low-pressure radio frequency (RF) inductively coupled plasma reactor at an argon ion energy of 100-200 eV for 15-120 s. Using scanning electron microscopy methods, it was shown that the formation of nano- and submicron structures of various architectures (nanohillocks, nanocones, droplet structures) occurred on the surface during processing. It is shown that the sputtering processes are accompanied by enrichment of the near-surface layer with metal atoms and a decrease in oxygen content. The formation of nano- and submicron gallium droplets on the surface has been proved by X-ray diffractometry. The analysis of the raman scattering spectra showed a decrease in the oxide phases of tellurium after plasma treatment. It is established that modification of the GaTe surface leads to suppression of specular optical reflection in the range of 0.4-6.2 eV.

Sb x Se y thin-films were deposited by chemical-molecular beam deposition (CMBD) on soda-lime glass from antimony (Sb) and selenium (Se) precursors. Due to the separate control of Sb (between 980 and 1025°C) and Se (between 415 and 470°C) source temperature, thin films of antimony selenide with different component ratios carry out obtained. The investigation encompassed a comprehensive analysis of the elemental and phase composition, like the crystal structure, of Sb x Se y films. To achieve this, a combination of analytical techniques was employed, including energy-dispersive X-ray microanalysis, atomic force microscopy, Raman spectroscopy, X-ray diffraction, and scanning electron microscopy. The bandgap of the films was ascertained in the region 1.03–1.25 eV through the acquisition of absorption spectra using a spectrophotometer. This enabled the determination of the films’ optical properties and facilitated further analysis of their potential applications. The physical properties of Sb x Se y films with various ratio were researched.

In this work, we study phonon and electronic properties of graphene on SiO2/Si and Al2O3 by simultaneous Raman and electrical measurements in the temperature range from room temperature to 550 degrees C, or at voltages from 20 to-20 V. The dependencies of G and 2D peak parameters and electrical resistance on temperature and voltage made it possible to observe in situ a competition between the p-type adsorbate removal from graphene surface and substrate-induced doping due to graphene-substrate conformality increase, both stimulated by either ambient or Joule heating. The analyzed parameters were dominated by the conformality increase, with the hole density increasing significantly and unidirectionally, while resistance and I-V curves fluctuated due to the competition. Having calculated Raman peak shift temperature coefficients, resistance temperature coefficients, total variations of carrier density, resistance and strain, we show that Al2O3 substrate can be used to reduce the desorption barrier, the overall doping, the impact on graphene resistance and on phonon anharmonicity - however, it should be used with regard to the possibility of introducing strain or stronger doping after longer treatments. The conformality effects should be taken into account when performing annealing, as well as graphene applications for sensors or strong electric currents.

SbxSey thin-films were obtained by chemical-molecular beam deposition (CMBD) on soda-lime glass from Sb and Se precursors. By the precise control of the Sb/Se ratio, Sb2Se3 thin films with stoichiometric composition were successfully obtained. The elemental and phase composition, as well as the crystal structure of SbxSey thin-films, were studied by energy-dispersive X-ray microanalysis, X-ray diffraction, Raman spectroscopy, scanning electron microscopy and atomic force microscopy. The optical bandgap of the films was determined from the absorption spectra acquired by a spectrophotometer. The physical properties of SbxSey thin films with different compositions were investigated.

The impact of discrete vacuum thermal evaporation (DVTE)-produced CdTe thin films after thermal annealing and CdCl2 treatment is discussed in the present article. As a result of simultaneous DVTE of CdCl2 and CdTe, CdCl2 was added straightly into the bulk of the formed CdTe film at the 270 degrees C substrate temperature in a single procedure. The DVTE approach deposits CdTe thin films with a high crystalline structure, which can be utilized effectively for the production of high efficiency solar cell applications, according to the results of X-ray diffraction, scanning electron microscopy with focused ion beam, transmission electron microscopy, and atomic force microscopy measurements.

SbxSey films were obtained by chemical molecular beam deposition (CMBD) on soda-lime glass substrates. Sb and Se were used as sources, their evaporation temperature was 950–1000°C (Sb) and 500°C (Se), the substrate temperature was maintained at about 500°C. Using scanning electron microscopy, X-ray diffraction analysis, and Raman scattering, the effect of the Sb/Se composition ratio on the structure of the synthesized films was studied. It was revealed that the films have a crystalline (orthorhombic) structure with compactly located crystallites having the form of rods with an average size: l = 4–8 µm (length) and d = 2–3 µm (diameter).

Kesterite Cu 2 ZnSnS 4 thin films were synthesized by the spray pyrolysis method with subsequent annealing at temperatures in the range from 425 to 525°C. To understand the impact of Ag on the Cu 2 ZnSnS 4 structural properties, changes in the elemental and phase composition, as well as microstructure were studied by electron microanalysis, X-ray phase and Raman analysis, scanning probe microscopy and scanning electron microscopy. The obtained samples have a compact morphology without appreciable voids and pores and crystallize in the tetragonal structure of kesterite CZTS. Phase analysis indicated incorporation of Ag in different concentrations without formation of other impurity compounds. An increase in the annealing temperature leads to an increase in the coherent scattering region, while the stoichiometric ratio of metals to chalcogen approaches 1, remaining close to that upon Ag alloying.

The effect of ion-plasma treatment on the physical properties of the surface of GaTe crystals is investigated. Gallium telluride crystals were grown by vertical zone melting under the pressure of an inert argon gas of 10.0 MPa at a temperature of 1000 o C and a zone displacement velocity of 9 mm/hr. The treatment was carried out in argon plasma in a high-density low-pressure radio frequency (RF) inductively coupled plasma reactor at an argon ion energy of 100-200 eV for 15-120 s. Using scanning electron microscopy methods, it was shown that the formation of nano- and submicron structures of various architectures (nanohillocks, nanocones, droplet structures) occurred on the surface during processing. It is shown that the sputtering processes are accompanied by enrichment of the near-surface layer with metal atoms and a decrease in oxygen content. The formation of nano- and submicron gallium droplets on the surface has been proved by X-ray diffractometry. The analysis of the Raman scattering spectra showed a decrease in the oxide phases of tellurium after plasma treatment. It is established that modification of the GaTe surface leads to suppression of specular optical reflection in the range of 0.4-6.2 eV. Keywords: gallium telluride, ion-plasma treatment, nanostructures, X-ray diffractometry, Raman scattering, reflection spectra.

In this paper, we study structural and adsorption properties of graphene irradiated with 46 MeV Ar ions and 240 keV H ions on SiO2/Si and copper substrates by micro-Raman spectroscopy. Graphene irradiated with H ions demonstrated evidence of both high and low defect density regions on a sub-micron scale. TRIM calculations showed that substrate was the dominant defect source with a contribution from about 55% for H ions in gra-phene on SiO2/Si to 90% for Ar in graphene on SiO2/Si. Charge carrier density analysis showed p-type adsorption doping saturating at (0.48 +/- 0.08) x 10(13) cm(-2 )or (0.45 +/- 0.09) x 10(13) cm(-2) with a defect density of 1.5 x 10(11) cm(-2) or 1.2 x 10(11) cm(-2) for graphene on SiO2/Si or copper, respectively; this was analyzed in the framework of physisorption and dissociative chemisorption. This study is useful towards the development of functionalization methods, molecular sensor design, and any graphene application requiring modification of this material by controlled defect introduction.

A study of the optical-reflection spectra (250–2500 nm) for the surface of lead sulfide crystals in the initial state and after the formation of a homogeneous ensemble of nanostructures is conducted. Single crystals of PbS are grown using the vertical-zone-melting method, with the [100] orientation along the growth axis. Surface nanostructuring is realized in a reactor of high-density argon plasma with a low-pressure high-frequency inductive discharge (13.56 МHz) at the ion energy ~200 eV. The uniform array of stepped lead sulfide nanostructures formed due to plasma treatment is up to 140 nm in height, with cruciform bases having ❬100❭-oriented lateral orthogonal elements 20–60 nm long. It is found that the specular-reflection- and diffuse-reflection spectra for the initial surface of the (100) PbS crystals and for that nanostructured in argon plasma differ significantly. Using the Kubelka–Munk theory of diffuse reflection and the Kumar theory of specular reflection, the band-gap value for the nanostructured surface of (100) PbS crystals is determined as 3.45–3.47 eV, exceeding the value for the initial surface of lead sulfide ~0.4 eV.