physica status solidi (a)Volume 61, Issue 2 p. K127-K131 Short Note Photographic action of positively charged nitrogen ions on AgBr† Yu. A. Astrov, Yu. A. Astrov A. F. Ioffe Physico-Technical Institute, Academy of Sciences of the USSR, Leningrad Search for more papers by this authorV. Zhelev, V. Zhelev Central Laboratory of Photographic Processes, Bulgarian Academy of Sciences, Sofia Search for more papers by this authorJ. Malinowski, J. Malinowski Central Laboratory of Photographic Processes, Bulgarian Academy of Sciences, Sofia Search for more papers by this authorS. M. Ryvkin, S. M. Ryvkin A. F. Ioffe Physico-Technical Institute, Academy of Sciences of the USSR, Leningrad Search for more papers by this author Yu. A. Astrov, Yu. A. Astrov A. F. Ioffe Physico-Technical Institute, Academy of Sciences of the USSR, Leningrad Search for more papers by this authorV. Zhelev, V. Zhelev Central Laboratory of Photographic Processes, Bulgarian Academy of Sciences, Sofia Search for more papers by this authorJ. Malinowski, J. Malinowski Central Laboratory of Photographic Processes, Bulgarian Academy of Sciences, Sofia Search for more papers by this authorS. M. Ryvkin, S. M. Ryvkin A. F. Ioffe Physico-Technical Institute, Academy of Sciences of the USSR, Leningrad Search for more papers by this author First published: 16 October 1980 https://doi.org/10.1002/pssa.2210610253Citations: 2 † Dedicated to Prof. Dr. Dr. h.c. Dr. E.h. P. Görlich on the occasion of his 75th birthday ‡ 194021 Leningrad, USSR. § 1040 Sofia, Bulgaria. AboutPDF ToolsRequest permissionExport citationAdd to favoritesTrack citation ShareShare Give accessShare full text accessShare full-text accessPlease review our Terms and Conditions of Use and check box below to share full-text version of article.I have read and accept the Wiley Online Library Terms and Conditions of UseShareable LinkUse the link below to share a full-text version of this article with your friends and colleagues. Learn more.Copy URL Share a linkShare onEmailFacebookTwitterLinkedInRedditWechat References 1 E. B. Owens, in: Mass Spectrometry Analysis of Solids, Ed. A. J. Ahearn, Elsevier, New York 1966 (p. 56). Google Scholar 2 D. M. Desiderio, in: Mass Spectrometry, Ed. G. W. A. Milne, Wiley, New York 1971. Google Scholar 3 P. Vouros, D. M. Desiderio, J. G. Leferink, T. J. Odiorne, and J. A. McCloskey, Internat. J. Mass Spectrom. Ion Phys. 10, 133 (1972 to 1973). 10.1016/0020-7381(72)83003-1 CASGoogle Scholar 4 T. J. Odiorne, D. M. Desiderio, P. Vouros, and K. Leung, Spectrosc. Letters 9(5), 279 (1976). 10.1080/00387017608067438 CASWeb of Science®Google Scholar 5 P. Broadhead, in: The Theory of the Photographic Process, 4th ed., Ed. T. H. James, Macmillan, New York 1977 (Chap. 23). Google Scholar 6 J. Malinowski, Photogr. Sci. Engng. 17, 86 (1973). CASWeb of Science®Google Scholar 7 Yu. A. Astrov, L. G. Paritskii, L. M. Portzel, S. M. Ryvkin, and O. M. Sresseli, Proc. 8th Internat. Symp. Techn. Comm. IMECO on Photon Detectors, Prague, August 1978. Google Scholar 8 Yu. A. Astrov, V. V. Egorov, S. Sh. S. Kasimov, V. M. Murugov, L. G. Paritskii, S. M. Ryvkin, and Yu. A. Sheremetiev, Kvantovaya Elektronika 4, 1681 (1977). CASWeb of Science®Google Scholar 9 J. Eneva, Dissertation, CLAFOP, Sofia 1977. Google Scholar 10 V. L. Granovskii, Elektricheskii tok v gaze, Vol. 1, GITTL, Moskva 1954. Google Scholar 11 S. C. Brown, Basic Data of Plasma Physics, The Technology Press MIT, Wiley, New York 1959. Google Scholar 12 H. D. Hagstrum, Phys. Rev. 122, 83 (1961). 10.1103/PhysRev.122.83 CASWeb of Science®Google Scholar 13 H. D. Hagstrum, Surface Sci. 2, 26 (1964); 10.1016/0039-6028(64)90039-1 CASWeb of Science®Google Scholar Surface Sci. 4, 265 (1966). 10.1016/0039-6028(66)90006-9 CASWeb of Science®Google Scholar Citing Literature Volume61, Issue216 October 1980Pages K127-K131 ReferencesRelatedInformation

All known cases are analyzed where structural defect formation has been observed in diamondlike semiconductors after irradiation at an energy below that needed to displace an atom from its crystal lattice site in elastic interaction with an incident particle. The results of some new experiments are also discussed, regarding subthreshold defect formation in germanium, gallium arsenide, and indium antimonide. It is shown that the majority of these results can be explained on the basis of the impurity ionization mechanism of defect formation, with multiple ionization of deep shells.

An experimental investigation was made of the use of a semiconductor ionization-type photographic system in recording infrared laser radiation pulses. Semiinsulating gallium arsenide, exhibiting photoconductivity in the wavelength range 0.8–1.7 μ, was used as the photodector. The system included a gas-discharge gap ∼60 μ thick and the air pressure in the gap was ∼100 Torr. Image was recorded on an RF-3 photographic film. The study was carried out on laser pulses of 60 μsec duration and λ=1.315 μ wavelength. The parameters of the system were as follows: the minimum recordable energy density was 5×10–7 J/cm2, the dynamic range was at least 300, and the resolution was ~7 mm–1.

physica status solidi (a)Volume 19, Issue 2 p. K173-K176 Short Note On a possible reason for potential fluctuations in amorphous semiconductors S. M. Ryvkin, S. M. Ryvkin A. F. Ioffe Physico-Technical Institute, Academy of Sciences of the USSR, LeningradSearch for more papers by this author S. M. Ryvkin, S. M. Ryvkin A. F. Ioffe Physico-Technical Institute, Academy of Sciences of the USSR, LeningradSearch for more papers by this author First published: 16 October 1973 https://doi.org/10.1002/pssa.2210190260Citations: 5AboutPDF ToolsRequest permissionExport citationAdd to favoritesTrack citation ShareShare Give accessShare full text accessShare full-text accessPlease review our Terms and Conditions of Use and check box below to share full-text version of article.I have read and accept the Wiley Online Library Terms and Conditions of UseShareable LinkUse the link below to share a full-text version of this article with your friends and colleagues. Learn more.Copy URL Citing Literature Volume19, Issue216 October 1973Pages K173-K176 RelatedInformation

The observation and a study of an anisotropy is reported of the photon drag hole current induced by linearly polarized CO2 laser light in p-Ge and p-InSb, which is due to the non-spherical structure of the isoenergetic surfaces in the valence band. Besides the drag current longitudinal with respect to the photon momentum, a transverse current component appears in cases where the direction of light propagation is not along the [100] axis. The transverse current is an oscillatory function of the angle between the electric field vector and the orientation of the transverse contacts. The magnitude of longitudinal current and its polarity reversal temperature in p-Ge depend to a considerable extent on the crystallographic orientation of the samples with respect to the photon momentum. The experimental data are in agreement with the theory. Es wird uber eine experimentelle Beobachtung und Untersuchung einer Anisotropie im Photonendraglocherstrom berichtet, der durch linear polarisiertes CO2-Laserlicht in p-leitendem Ge und InSb induziert wird und durch die nichtspharische Struktur der Flachen gleicher Energie des Valenzbandes verursacht wird. Neben dem Dragstrom, longitudinal bezuglich des Photonenimpulses, tritt eine transversale Stromkomponente in den Fallen auf, wo die Ausbreitungsrichtung des Lichts nicht in Richtung der [100]-Achse liegt. Der transversale Strom ist eine oszillierende Funktion des Winkels zwischen dem elektrischen Feldvektor und der Orientierung der transversalen Kontakte. Die Grose des longitudinalen Stromes und die Umkehrtemperatur der Polaritat in p-leitendem Ge hangen in betrachtlichem Mase von der kristallographischen Orientierung der Proben bezuglich des Photonenimpulses ab. Die experimentellen Werte stimmen mit der Theorie uberein.

We have proposed an X-ray spectrometer based on p-i-n detectors obtained by compensation of n-germanium by radiation defects. The detectors are stable at room temperature, with a thin entrance window and are made selfconsistent which noticeably simplifies the X-ray spectrometer. The advantage of this spectrometer over spectrometers with Si(Li) detectors lies in the possibility of analyzing the heavy elements on K-series. In defining W and Hg in ores the threshold sensitivity 4×10−3% has been achieved.