Предлагается простая нелинейная по концентрации дефектов модель контакта металл–полупроводник, когда барьер Шоттки формируется поверхностными дефектными состояниями Ei, локализованными на границе раздела. Показано, что учет нелинейной зависимости энергии Ферми ЕF от концентрации дефектов ведет к повышению барьера Шоттки на 15–25%. Рассчитанные значения высоты барьера используются для анализа вольтамперных характеристик структур M/(SiC)1 - x(AlN)x. Результаты расчета сопоставляются с экспериментальными результатами.

A simple model of the metal–semiconductor contact that is nonlinear in the concentration of defects when the Schottky barrier is formed by the surface defect states E i localized at the interface has been proposed. It has been shown that taking into account the nonlinear dependence of the Fermi energy E F on the concentration of defects results in an increase in the Schottky barrier height by 15 to 25%. The calculated values of the Schottky barrier height have been used for the analysis of the current-voltage characteristics of M/(SiC)1–x (AlN) x structures. The theoretical results have been compared with the experimental data.

Epitaxial layers of the (SiC)1 − x (AlN) x solid solution with x ≈ 0.12 and x = 0.64 without macroscopic structural distortions were grown using a new technique. It was established that the compositional dependences of crystal lattice parameters of the epitaxial films obey the Vegard’s law with an error of ∼0.03. This confirms that there is formation of isomorphic substitutional solid solutions in the SiC-AlN system.

The heterostructures of p-(SiC)1 − x (AlN) x / n -6H-SiC are synthesized by means of sublimation epitaxy of (SiC)1 − x (AlN) semiconductor solid solutions at 6H-SiC substrates. The results of the investigation of the concentration and temperature dependences on current-voltage characteristics (CVCs) are presented. It is revealed that due to the high potential barriers the forward current is caused by the tunneling and recombination processes of charge carriers via states at the boundary surface.

The results of theoretical estimations of important parameters of the process of magnetron-assisted sputtering are reported. The parameters are the extent of the zone of thermalization of atoms and the distance from the target to the conditional anode. The method of magnetron-assisted sputtering of polycrys-talline SiC-AlN targets is applied to produce thin (SiC)(1-x)(AlN)(x) alloy films on SiC and Al2O3 substrates. The structure and composition of the films are studied by X-ray diffraction measurements and electron microscopy. The factors that control the composition and structure of the films and the conditions of formation of the single-crystal (SiC)(1-x)(AlN)(x) films on the SiC substrates are established.

Установлена зависимость скорости роста, химического состава, а также типа проводимости пленок полупроводниковых твердых растворов (SiC)1 - x(AlN)x от технологических параметров при сублимационной эпитаксии на подложках 6H-SiC в атмосфере смеси аргона и азота.

We have studied the effect of growth conditions on the growth rate, chemical composition, and conductivity type of films of (SiC) 1 − x (AlN) x semiconductor solid solutions produced by sublimation epitaxy on 6 H -SiC substrates in an argon + nitrogen atmosphere.

Magnetron sputtering of polycrystalline SiC-AlN targets was used to obtain films of (SiC) 1− x (AlN) x solid solutions on silicon carbide (6H-SiC) substrates heated to a temperature in the range T = 500–1200°C. The deposits were characterized with respect to structure, composition, and optical absorption. It is demonstrated that the films obtained on 6H-SiC substrates at T ≥ 1000°C possess a single crystal structure. The compositions of (SiC) 1− x (AlN) x films are close to those of the corresponding SiC-AlN targets.

Using the method of measuring and analyzing the capacitance-voltage characteristics, it is found that the n-6H-SiC/p-(SiC)1−x(AlN)x heterostructures obtained by sublimation epitaxy of the (SiC)1−x(AlN)x layers on the 6H-SiC substrates have abrupt heterojunctions ∼10−4 cm thick. The basic properties of heterostructures, which depend on the epilayer composition and temperature, were determined from the capacitance-voltage characteristics.

The effect of laser annealing on the photoluminescence properties of (SiC) 1− x (AlN) x epitaxial films was studied. It was proposed that annealing causes the displacement of the Al and N atoms from their lattice sites and the formation of Al Si -N C donor-acceptor pairs acting as the luminescence centers. According to this model, the increase in the annealing time is accompanied by the formation of donor-acceptor pairs with the shortest interatomic distances at the expense of associations of the distant defects and by a shift of the respective photoluminescence band to the high-energy spectral region.

The effect of laser irradiation on the photoluminescence of (SiC) 0.95 (A1N) 0.05 epitaxial films was studied. Irradiation was found to dislodge Al and N atoms from their substitutional sites, producing radiative donor-acceptor pairs Al si -N c . The average pair separation decreases with increasing irradiation time, as evidenced by the shift of the corresponding emission to higher energies.

Results of heterojunctions obtaining on the basis of solid solutions (SiC)/sub 1-x/(AlN)x are submitted and some physical properties are investigated.