The CuIn 0.95 Ga 0.05 Se 2 films 0.6 – 1.5 μm thick have been prepared at selenization temperatures from 300°C to 500°C and studied by Raman spectroscopy methods. The interval of the selenization temperatures and the minimum thickness of the metal layer necessary for the preparation of a high-quality thin CuIn 0.95 Ga 0.05 Se 2 film are established. It is shown that the CuIn 0.95 Ga 0.05 Se 2 films prepared by the proposed technology can successfully be used as an active photosensitive layer of highly efficient solar radiation converters.

Depending on the choice of the technology for producing CuInxGa1 – xSe2 films, a spread in the electrophysical and photoelectric parameters of photoconverters is observed, which is primarily related to the microstructure formed in the films and their phase composition. The investigation of phase-separation processes and the formation of a single-phase CuInxGa1 – xSe2 film is a key element in fabricating high-quality absorbing layers. In the study, CuIn0.95Ga0.05Se2 thin films are obtained by the two-stage selenization method of previously synthesized copper−indium−gallium layers of different thickness in the temperature range of 350°C ≤ T ≤ 550°C. The surface morphology, chemical composition, and structure of the synthesized CuIn0.95Ga0.05Se2 films are investigated via scanning electron microscopy, X-ray powder diffraction, and X-ray fluorescence. It is established that the synthesized films are polycrystalline and have a developed surface with an average crystallite size of 50–140 nm. On the basis of statistical analysis of the electron-microscopy data, the lowest temperature of the onset of the selenization process and the smallest required thickness of the metal layer for the formation of a continuous thin film CuIn0.95Ga0.05Se2 are determined. The obtained films can be used as the active photosensitive layer in highly efficient solar-radiation converters.

Objectives To analyse the thermophysical processes in the thermoelectric heat transfer intensifier operating as part of a desalination system based on semiconductor thermoelectric converters.Method A mathematical model for the design of a desalter containing a thermoelectric heat exchanger, which provides for the use of heat flows by natural thermal conductivity due to so-called heat channels, is proposed. The proposed method of using additional heat sinks on the heat-absorbing side of the device and additional heat sources on the fuel side determines the need for a new mathematical model that differs from the known mathematical models describing heat transfer in the heat transfer flowing-type intensifier.Results The analysis of modelling results shows that a significant contribution to the temperature field of heat conductors is made when considering the heat transfer over the heat channels. The value of the contribution is the greater, the higher the thermal conductivity of the heat channels and the temperature difference between the heat conductors and the surface of the heat channels. In accordance with their purpose, flow-type thermoelectric heat transfer intensifiers (THTIs) for desalination applications must ensure efficient heat transfer from the cooled fluid flow to the heated fluid flow. The results show that, at a given limited length of the heat exchanger, the use of a thermoelectric battery together with heat channels allows equality of temperatures of heat conductors at the output to be achieved.Conclusion The modelling results show that, under the operating conditions of the thermal battery in intensifier mode, the length of the heat exchanger shall not exceed the value, at which the temperature of the heat conductor at the outlet becomes equal. The system solution provides the required length of the thermal battery, which allows equality of coolant temperatures to be achieved at the exit from the THTI operation mode. Following the logic of the desalter scheme under consideration, it is obvious that the reduction in the length of the heat exchanger, with all other things being equal, gives a reduction in the mass and size of the device as a whole.

1 , Б.А.БИЛАЛОВ 2 , М.А.АЛИЕВ 1 , Р.М.ГАДЖИЕВА 1 , Г.А.АЛИЕВ 2 КОМБИНАЦИОННОЕ РАССЕЯНИЕ СВЕТА ПЛЕНОК CuIn 0.95 Ga 0.05 Se 2 , ПОЛУЧЕННЫХ МЕТОДОМ СЕЛЕНИЗАЦИИ Методами спектроскопии комбинационного рассеяния света исследованы пленки CuIn 0.95 Ga 0.05 Se 2 толщиной 0.6-1.5 мкм, полученные при температурах селенизации от 300 до 550 ºС.Выявлена оптимальная температурная область селенизации 500 °С ≤ Т sel ≤ 550 °С и необходимая толщина металлического слоя d > 1 мкм, для формирования качественной тонкой пленки CuIn 0.95 Ga 0.05 Se 2 .Показано, что пленки CuIn 0.95 Ga 0.05 Se 2 , полученные по предложенной нами технологии, приемлемы для использования в качестве активного фоточувствительного слоя высокоэффективных преобразователей солнечного излучения.

Photosensitive polycrystalline CuIn0.95Ga0.05Se2 thin films have been formed on glass, aluminum, and nanoporous Al/Al2O3 substrates by means of two-step selenization in a gas (nitrogen) flow carrying a reaction component (selenium). The structural properties and the Raman scattering spectral dependences have been investigated. The dependence of the main lattice parameters and intensities of the Raman scattering lines on the substrate material is demonstrated.

Proposed nonlinear defect concentration model of metal-semiconductor contact.It is shown that taking into account nonlinear dependence of the Fermi energy EF defect concentration leads to higher barrier Schottky in 15-25 %.Calculated Volt-Amper characteristics of the diodes are consistent with experiment.

A simple but nonlinear model of the defect density at a metal–semiconductor interface, when a Schottky barrier is formed by surface defects states localized at the interface, is developed. It is shown that taking the nonlinear dependence of the Fermi level on the defect density into account leads to a Schottky barrier increase by 15–25%. The calculated barrier heights are used to analyze the current–voltage characteristics of n-M/p-(SiC)1–x (AlN) x structures. The results of calculations are compared to experimental data.

This paper reports the growth and characterization of transparent magnesium doped zinc oxide (ZnO:Mg) thin films prepared on glass substrates by dc magnetron sputtering. The effects of the Mg concentrations (0, 1 and 5 at %) and working gas compositions (pure Ar and Ar-O-2 mixture) on the structural and optical properties of the ZnO:Mg thin films were investigated. The experiment results showed that the ZnO and ZnO:Mg thin films are polycrystalline with a hexagonal wurtzite structure exhibiting a preferred (002) crystal plane orientation. The results indicated that the crystallinity of ZnO:Mg thin films was significantly affected by both Mg-doping and the woking gas composition. Optical studies revealed that the optical band gap increases with Mg concentration.

A production technology of thin CuIn 0.95 Ga 0.05 Se 2 films has been developed based on the method of two-stage selenization of CuIn 0.95 Ga 0.05 precursor by a reactive component (selenium) in a carrier gas (nitrogen) flow. The morphology and structure of obtained films were studied by electron microscopy and X-ray diffraction techniques. The spectral dependence of the optical absorption coefficient was measured.

Предлагается простая нелинейная по концентрации дефектов модель контакта металл–полупроводник, когда барьер Шоттки формируется поверхностными дефектными состояниями Ei, локализованными на границе раздела. Показано, что учет нелинейной зависимости энергии Ферми ЕF от концентрации дефектов ведет к повышению барьера Шоттки на 15–25%. Рассчитанные значения высоты барьера используются для анализа вольтамперных характеристик структур M/(SiC)1 - x(AlN)x. Результаты расчета сопоставляются с экспериментальными результатами.

A simple model of the metal–semiconductor contact that is nonlinear in the concentration of defects when the Schottky barrier is formed by the surface defect states E i localized at the interface has been proposed. It has been shown that taking into account the nonlinear dependence of the Fermi energy E F on the concentration of defects results in an increase in the Schottky barrier height by 15 to 25%. The calculated values of the Schottky barrier height have been used for the analysis of the current-voltage characteristics of M/(SiC)1–x (AlN) x structures. The theoretical results have been compared with the experimental data.

Method of magnetron sputtering targets polycrystalline SiC-AlN on substrates SiC and Al2O3 thin films received solid solutions (SiC)1-x(AlN)x. The methods of Xray and electron microscopy studies the structure and composition of films. There are factors that determine the composition and structure of films, as well as conditions for the formation of monocrystalline films of (SiC)1-x(AlN)x to the substrate SiC. The basic technological parameters of process magnetron sedimentation of films (SiC)1-x(AlN)x are calculated.

Epitaxial layers of the (SiC)1 − x (AlN) x solid solution with x ≈ 0.12 and x = 0.64 without macroscopic structural distortions were grown using a new technique. It was established that the compositional dependences of crystal lattice parameters of the epitaxial films obey the Vegard’s law with an error of ∼0.03. This confirms that there is formation of isomorphic substitutional solid solutions in the SiC-AlN system.

The experimental results for films growth based on solid solutions (SiC) 1-x (AlN) x by magnetron sputtering uniform compact target are discussed. It was found that the elemental and phase films composition may corresponds to the target composition. Physico-chemical analysis of the mechanism for atoms substitution in the cation and anion sublattices at atoms mixing in the quasi-binary system of SiC-AlN has confirmed the possibility of a continuous series of solid solutions at temperatures below 900 0C based on the basic concepts of isomorphism and thermodynamic theory of mixing criteria. The calculation of the deformation and the electrostatic component of the interaction parameter was made. The experimental and calculated results clarify the existing ideas about the model formation of solid solutions in the system SiC-AlN.

The objective of the study is a growth of SiC/(SiC)1−x(AlN)x structures by fast sublimation epitaxy of the polycrystalline source of (SiC)1−x(AlN)x and their characterisation by proximal scanning electron microscopy and atomic force microscopy. For that purpose optimal conditions of sublimation process have been defined. Manufactured structures could be used as substrates for wide-band-gap semiconductor devices on the basis of nitrides, including gallium nitride, aluminum nitride and their alloys, as well as for the production of transistors with high mobility of electrons and also for creation of blue and ultraviolet light emitters (light-emitted diodes and laser diodes). The result of analysis shows that increasing of the growth temperature up to 2300 K allows carry out sublimation epitaxy of thin layers of aluminum nitride and its solid solution.