Passive electronic components, including capacitors, resistors, inductors, and related devices, are essential components of all electronic circuits. Electronic technologies form the foundation of technological sovereignty and state security. Computer technology, control and navigation systems, mobile communication, intelligent energy, telemedicine, electric vehicles, and unmanned vehicles are just a few examples of industries that rely on passive electronic components. At the same time, the majority of the production of these components is currently located abroad, in countries like China, India, and Taiwan. Foreign companies based in China, the United States, India, the United Kingdom, Israel, and other countries own most of the patents related to electronic components and technologies.. The introduction of sanctions in 2022 highlighted the significant dependence of the availability of electronic components on political factors. This increased the urgency of establishing and developing our own production of these components. To effectively replace imports, it is essential to identify the key trends in passive electronics development. Patent documents provide information that is not available elsewhere, including technical details such as the operational principle and technical parameters. This information allows us to assess the state of and identify trends in scientific and technological advancement. Patents can also be used for reverse engineering imported components and developing indigenous production of passive electronic parts.. It has been established that the main trends in development are miniaturization, increased productivity of passive electronic components, and their adaptation to extreme conditions, such as high and ultra-low temperatures, including cryogenic conditions. The field of cryogenic passive electronics is just beginning to develop, but a number of patents have already been identified that could be of interest to developers in this area.

A low-noise bipolar differential dc amplifier was studied at temperatures of 300 and 77 K. It was shown that to ensure the best amplifier performance in terms of noise figure when the operating temperature decreases from 300 to 77 K, it is advisable to use the transistor in the mode of low currents not exceeding 2 mA. It has been established that lowering the operating temperature to 77 K leads to a decrease in the input resistance of the amplifier from a value of several kiloohms to 100 Ohms, the dynamic range increases from 80 to 85 dB, and the harmonic coefficient increases from 0.09% to 1%. In addition, lowering the operating temperature to 77 K has a significant effect on the noise properties of the amplifier: the spectral density of voltage noise decreases from 1 to 0.4 nV/Hz1/2, the spectral density of current noise increases from 2.5 to 9 pA/Hz1/2, while also The threshold frequencies of 1/f noise increase: for voltage from (0.1...10) to 20 Hz and for current from (10...100) to 1000 Hz. The possibility of using an amplifier for low-temperature measurements of samples with low input resistance is substantiated.

The paper presents the electrical parameter measurements of commercially available surface mount device (SMD) resistors at cryogenic temperatures. Four types of resistors were investigated: Vishay FC0402, SMM0102, as well as Yageo RC0402 and Erkon-nn PI-160-0.05-1. The following parameters were measured: the nominal DC resistance, the frequency response of the resistance in the range from 20 Hz to 10kHz, and the scattering matrix in the frequency range from 10 MHz to 1 GHz. Measurements were conducted at three temperatures: 300 K, 77 K, and 4 K. The deviations of the nominal DC resistance values were obtained 1%, 0.6%, 35%, and 5.6% for FC0402, SMMO102, RC0402 and P1-160-0.05-1 resistors, respectively. These results align with the scattering matrix measurements for these resistors. Overall, the FC0402, P1-160-0.05-1, and SMM0102 series resistors are suitable for use in cryogenic electronic devices. However, using RC0402 resistors in cryogenic applications requires consideration of significant changes in their characteristics.

A survey of modern cryogenic electronics patents is the focus of this article. Modern patent databases such as PatSearch, Espacenet, and Orbit Questel were used to conduct an information search. Patent families related to cryogenic electronics over the past 20 years have been identified. The dynamics of patenting in this area is shown. The world leaders in the number of patents are revealed. The largest number of patents is registered in China. IBM holds the most patents in this field worldwide. Cryogenic electronics are the most dynamically developing industry. Modern commercially attractive solutions are associated with the development of a quantum computer. The development of wireless systems of qubit control and reading is the most relevant. It was found that there is no available information about the possibility of using an industrially produced electronic component base to create cryogenic electronics devices. Electronic components specially designed for cryogenic conditions are most often used, as a rule, using the superconductivity effect.

Since 2014, the Russian Federation has been actively supporting import substitution of pro-ducts and technologies in various areas of production. There is no doubt that the technological development and the state security base on electronic technologies primarily. This is due to the fact that they have penetrated into all spheres of our life. For example, computer equipment, control and navigation systems, mobile communications, intelligent energy, telemedicine, electric vehicles and unmanned vehicles, electronic banking transactions are just a short list of industries where electronic components are used. At the same time, the main part of the electronic component base production is currently located abroad, in China, India, Taiwan, etc. Also foreign companies located in China, the USA, India, the UK, Israel, its., own the most of the patents for devices and technologies related to the electronic component base. A significant dependence of the availability of the electronic component base on political factors were revealed by the sanctions restrictions in 2022. And this highlight the urgency of creating and developing national production of various elements of the electronic component base. The number of patents is the objective indicator of the import substitution results. In this paper, the analysis of published patent documents on the most popular passive elements of the electronic component base (resistors, capacitors, inductors) is carried out using the tools of modern patent databases. The dynamics of paten¬ting for passive electronic components in the Russian Federation over 30 years is shown. It was found that import substitution measures had practically no effect on patenting in the production of passive electronic components. The comparison of the number of Russian patent owned by domestic patent holders and by foreign companies is carried out. High potential technology domains for development have been identified. It is established that Russian manufacturers of passive electronic components have a significant potential for patenting their developments.

We proposed equivalent direct current superconducting quantum interference device and evaluation method, which make it possible to obtain current-voltage characteristics of asymmetric direct current superconducting quantum interference device at negligibly small magnetic flux caused by difference in parameters of Josephson junctions. For model synthesis we replaced direct current superconducting quantum interference device by a parallel connection of two nonlinear elements. It is shown that the current-voltage characteristic of direct current superconducting quantum interference device with the asymmetry parameters of critical currents and shunt resistors less than 10 % can be represented with great accuracy in the form of the current-voltage characteristic of an equivalent single Josephson junction with equivalent parameters. Its relative approximation error is less than 0.5%. This conclusion is in complete agreement with the well-known results of other authors. For small deviations from symmetry, the proposed method allowed us to refine the current-voltage characteristic. We discussed the reasons why the experimental current-voltage characteristics differ from the theoretical ones.

Cryogenic low-noise microwave amplifiers are an important tool in the measurement systems of various devices in the field of radio astronomy and quantum computing. The quality of measurements depends on its parameters - gain, equivalent noise temperature and power consumption. In the paper, we present a broadband low-noise cryogenic microwave amplifier operating in the frequency range of 1–3 GHz at an ambient temperature of 4 K. BFP840F heterostructural bipolar silicon germanium transistors were used as active elements. The design of the amplifier is a printed circuit board with lumped elements soldered on it. PCB packed in an aluminum case with input and output SMA connectors and a power connector. The measured parameters of the amplifier - the gain and the equivalent noise temperature at an ambient temperature of 4 K were more than 30 dB and less than 4 K, respectively. The power consumption of the amplifier was less than 8 mW.

It widely uses complex signals based on code sequences in digital communication and radar systems. It pays most attention to code sequences analysis, synthesis, and implementation while developing such systems. Significantly less attention is paid to the shape of elementary signals (ES) constituting a complex signal. This work aims at a comparative analysis of the parameters of several known ES in terms of the rate of spectrum decrease and the accuracy of measuring the time position. Recommendations are given for choosing the best ES based on the criterion of unconditional preference. This paper aims in comparative parameter analysing of several known ESs from spectrum decrease rate and time position measurement accuracy points of view. Recommendations are given on choosing the best ES based on the unconditional preference criterion.

The article presents the fracture test data of rock samples with the porphyroblastic, granoblastic lepidoblastic and laminated structure. The tests were carried out on lab-scale tester ASI-2. The test samples were subjected to uniaxial compression until discontinuity with synchronous recording of associated electromagnetic emission, load and displacements along the compression axis. The laminated rock samples in fracture show anisotropy of geophysical parameters and electromagnetic emission.

Приведены результаты экспериментальных исследований разрушения образцов горных пород, имеющих порфиробластовую, гранобластовую, лепидобластовую и слоистую структуру. Эксперименты проводились на лабораторном стенде АСИ-2. Образцы горной породы подвергались одноосному сжатию до нарушения сплошности с синхронной регистрацией сигналов сопутствующего электромагнитного излучения, нагрузки и перемещения вдоль оси сжатия. Установлено, что при разрушении горной породы слоистой структуры проявляются анизотропные свойства геофизических параметров и электромагнитного излучения. The article presents the fracture test data of rock samples with the porphyroblastic, granoblastic lepidoblatic and laminated structure. The tests were carried out on lab-scale tester ASI-2. The test samples were subjected to uniaxial compression until discontinuity with synchronous recording of associated electromagnetic emission, load and displacements along the compression axis. The laminated rock samples in fracture show anisotropy of geophysical parameters and electromagnetic emission.

Some electrical parameters of the SIS-type hysteretic underdamped Josephson junction (JJ) can be measured by its current-voltage characteristics (IVCs). Currents and voltages at JJ are commensurate with the intrinsic noise level of measuring instruments. This leads to the need for multiple measurements with subsequent statistical processing. In this paper, the digital algorithms are proposed for the automatic measurement of the JJ parameters by IVC. These algorithms make it possible to implement multiple measurements and check these JJ parameters in an automatic mode with the required accuracy. The complete sufficient statistics are used to minimize the root-mean-square error of parameter measurement. A sequence of current pulses with slow rising and falling edges is used to drive JJ, and synchronous current and voltage readings at JJ are used to realize measurement algorithms. The algorithm performance is estimated through computer simulations. The significant advantage of the proposed algorithms is the independence from current source noise and intrinsic noise of current and voltage meters, as well as the simple implementation in automatic digital measuring systems. The proposed algorithms can be used to control JJ parameters during mass production of superconducting integrated circuits, which will improve the production efficiency and product quality.

The purpose of the work is to obtain microwave absorber materials based on Fe–Al particles and to study its absorbing characteristics. Composite materials consisting of Fe, Fe–Al particles, and a paraffin matrix were obtained by the rotating magnetic field method. The mechanism of usage of magnetic dipoles for coating Fe particles with Al nanoparticles and further composite material synthesis was described. The microstructure, mechanical, magnetic, and dielectric properties and parameters of microwave absorption of the obtained composite materials were investigated. Magnetic and dielectric permittivity in the frequency range of 8–12 GHz were obtained. The influence of the field of rotational magnetic dipoles in combination with Al nanoparticles makes it possible to obtain a more durable structure in comparison with composite materials without Al nanoparticles. It was found that composite materials have good radio-absorbing properties in the studied frequency range. The maximum value of S21 = –27.9 dB was obtained at a frequency of 12 GHz for an Fe–Al composite material with application of the field of rotational magnetic dipoles.

The problem of the automatic algorithm developing for estimating the critical current of the SIS-type Josephson junctions is considered. This problem is relevant for a physical experiment automation and for the junction parameters control during production. The algorithm proposed is based on statistical processing of the results of synchronous measurements of current and voltage samples at the Josephson junction excited by a sequence of the current pulses with a slow rising edge and fixed pulse ratio. We use a model of a composition of useful signal and white Gaussian noise with zero mean and unknown variance for test and measurement signals. We employ the contrast method to solve the problem of the a priori uncertainty of the noise variance. For this method, the difference in signals during the pulses of the current and during the pause between them is used. The relative total error of estimating the critical current in automatic mode is less than 0.2% for typical characteristics of measuring equipment.

The study aims at synthesizing an asymptotically robust invariant demodulation algorithm for DPSK signals with arbitrary modulation multiplicity used in aircraft communication systems and observed against the background of noise with an unknown probability distribution and a noise complex with a priori uncertain parameters. The analysis of the efficiency of the proposed algorithm is carried out by a computer simulation modeling. The algorithm implies automatic detection and rejection of narrowband pulse noise. This type of interference is typical for radio-navigation systems. It has been shown that the narrowband pulse noise should be eliminated if the signal-to-interference ratio becomes less than -10 dB. The use of the asymptotic robustness principle ensures the stability of the algorithm characteristics to changes in the character of the noise probability distribution density. It was found that the joint application of narrowband pulse interference elimination and the asymptotically robust approach provides reliable demodulation performance both when receiving against the background Gaussian noise and under the action of pulse interference and noise with "heavy tails". In addition, it has been shown that the use of signals with differential phase modulation, direct sequence spread spectrum, and the sidelobe levels of less than 10% effectively suppresses interference caused by multipath signal propagation.

The features of a direct current low noise amplifier designed on a commercial JFET transistor and operating at 77 K are investigated. The device design is the common-source transistor circuit with an auto-biased gate. We study the dependence of its characteristics on the amplifier operating current at a temperature of 77 K and compare it with the values of the same parameters at a temperature of 300 K. The following characteristics have been obtained: transfer function, input voltage and current noise densities. It has been shown that the voltage noise spectral density at 77 K has the same value (about 0.5 nV/Hz 1/2 ) as at room temperature at half the operating current. It points to the presence of the hot-electron effect in the transistor. The estimation of the current noise density is less than 6 fA/Hz 1/2 . The obtained results have shown the suitability of the JFET direct current low noise amplifier for cryogenic applications inside liquid nitrogen cooling systems.

An algorithm for estimating the energy of a radio pulse when measuring a superconducting system qubit–resonator consisting of a superconducting resonator and a coupled qubit is proposed. The algorithm is based on the use of complete sufficient statistics and does not require a priori information about the level of additive white Gaussian noise in the process, as well as about the amplitude, initial phase, and temporal position of the radio pulse. The estimates are effective and consistent. The efficiency of the algorithm is estimated by means of computer simulation.

Digital algorithms for checking the functionality and measuring critical current of SIS-type Josephson junctions are proposed, taking into account the features of measurements under conditions of fluctuation noise and suitable for implementation in an automatic mode. A piecewise line approximation of the voltage-current characteristic is used following the typical voltage-current characteristic. To obtain the essential statistical information about the random component of the measurement results, the excitation of the Josephson junction by a periodic testing sequence of triangular current pulses was used. For a workable Josephson junction, there is a voltage jump in the vicinity of the critical current for each rising slope of the exciting pulses. The statistics of the threshold crossings on each pulse rising slope of the test pulse sequence are used to estimate the critical current. An efficient estimate of the critical current was obtained by using the maximum likelihood method. The results of statistical modeling confirm the correctness of using this method in the study of superconducting structures. The use of statistical methods makes it possible to improve technical control during serial production of Josephson junctions and debug the appropriate manufacturing technology.

In the paper DC low-noise amplifier based on commercial silicon SSM2212 transistors and operating at 77 K are described. The amplifier circuit is a differential stage with one of the arms grounded. Its characteristics, depending on the amplifier operating current, are measured. The schemes for measuring the main parameters of the amplifier are described and the following characteristics are obtained: transfer function, input voltage and current noise densities (less than 0.4 nV/H z 1/2 and about 5 pA/Hz1/2 at 10 kHz, respectively). For the voltage noise, the flicker noise threshold frequency is increased to 20 Hz at 77 K. Based on the results obtained, the amplifier input resistance and some parameters of the bipolar transistor hybrid-π noise model are estimated. In addition, the optimal resistance of the signal source is estimated to obtain the minimum noise figure. The obtained results have shown the suitability of commercially available bipolar transistors for cryogenic applications and could be used to optimize a custom readout system using a cryogenic amplifier based on this type of bipolar transistor.