An approach of direct bonding of SiC wafers of differing polytypes has been implemented in order to create a template for cubic 3C-SiC homo epitaxy. Hetero epitaxial 3C-SiC layers grown by chemical vapor deposition were transferred onto a hexagonal 6H-SiC wafer. The results of structural characterization showed that the quality of 3C-SiC sublimation epitaxy on the templates is comparable to the level of epitaxy of cubic silicon carbide by chemical vapor deposition method. It was confirmed that the 3C-SiC layer transferred onto the 6H-SiC substrate plays the role of a crystalline “seed” that determines cubic polytype of the overgrown SiC layer.

The simulation results of the temperature distribution in the growth area of graphene layers obtained by the method of thermal decomposition of the silicon carbide surface substrates in setup with induction heating are presented. The heating parameters of the setup elements are calculated using the commercial package COMSOL Multiphysics taking into account the electrical, thermal and magnetic properties of the materials from which the growth plant elements are made. A numerical estimate of the heating inhomogeneity of silicon carbide plates over its area during the growth of graphene layers at a given temperature is given. It is shown that the lateral temperature distribution over the area of the plate has radial symmetry with decreasing values towards the center.

At present, intensive research is underway in the field of vacuum-sublimation growth of 3C-SiC. Transfer of a thin (001)3C-SiC layer onto a 6H-SiC wafer is a promising way to fabricate a 3C-SiC/6H-SiC substrate for growing device-quality homoepitaxial films of low defect density. The article presents the results of the structural characterization of an interface formed during the transfer of a 3C-SiC layer onto a 6H-SiC(0001) wafer, performed with transmission electron microscopy (TEM). A 3C-SiC film with a thickness of about 10 mu m, grown by chemical vapor deposition (CVD) on a Si(001) substrate, was utilized in the study. Silicon acted as a bonding material in the transfer process. The morphology and microstructure of the interface between a 6H-SiC substrate and a 3C-SiC (001)-oriented layer are under consideration. TEM investigation reveals an effect of "self"-orientation of the layer with respect to the wafer during the transfer process: an interaction between the molten silicon layer and silicon carbide throughout crystallization results in the generation of defined orientation relationships with respect to substrate axes. An analysis of selected area electron diffraction patterns taken from interfaces showed the relationships to be 3C-SiC{001} & Vert; 6H-SiC(0001) and 3C-SiC < 11((sic)) 0 > similar to & Vert; 6H-SiC < 11 2((sic))0 >.

This paper reports on the development of direct bonding of 3C-SiC epitaxial lay-ers grown by chemical vapor deposition on silicon substrates and 6H-SiC single crystal wafers. It has been found that the bonding temperature is a critical parameter to obtain mechanical contact between the transferred 3C-SiC layers and the 6H-SiC carrier plates. The results of structural characterization showed that the structure of epitaxial layers grown by sublimation on bonded substrates corresponds to a pure cubic phase of high quality.

This paper presents the results of a study of the effect of external influences on the structure and phase composition of porous SiC layers obtained by anodization. It is shown how carrying out of standard technological operations makes it possible to control the properties of porous structures and significantly expands the variety of their morphological forms. The con-ditions facilitating the occurrence of phase-structural and polytype transformations in porous SiC structures are determined.

An approach is presented to optimizing the growth of graphene on silicon carbide (SiC) substrates by using numerical simulation methods. The presented models in axisymmetric approximation show good convergence with experimental results and allow the studies of tem-perature fields inside closed growth cells. It is concluded that the use of numerical calculation methods is promising for optimizing the design of a technological setup for graphene growth by sublimation of the SiC surface.

The paper reveals the investigation of cathodoluminescent properties of point defects in bulk GaN sample grown by the HVPE technique. The cathodoluminescence spectra of GaN exhibit two broad luminescence bands in the blue and yellow optical ranges. The studies have shown that each of the observed luminescence bands is associated with the emission of several point defects - luminescence centers with similar spectral positions, but different decay times. The paper proposes a technique for estimation of the luminescent centers relative content. The technique is based on measuring the cathodoluminescence intensity dependence on the electron beam current density and decay times of the bands. The changes in the relative contents of point defects - luminescent centers are determined for the back and front sample regions – at the beginning of growth and near the sample surface. The excitation capture efficiency was determined for luminescence centers with the longest decay time emitting in the yellow range. It was found to be constant for different regions of the sample.

The results of studying the optical properties of gallium-nitride samples with a highly oriented texture structure, grown without using a conventional semiconductor or sapphire substrates, are presented. It is shown that the stacking faults contained in the GaN blocks in the texture of the material under study are self-organized heteropolytype nanostructures and the effective luminescence in the ultraviolet (UV) spectral range, associated with stacking faults of the I 1 type in the basal plane, is determined by the optical transitions of excitons localized near these natural defects in the single-crystal bulk of blocks in the GaN texture.

The simulation results of the temperature distribution in the growth area of graphene layers obtained by the method of thermal decomposition of the silicon carbide surface substrates in setup with induction heating are presented. The heating parametrs of the setup elements are calculated using the commercial package COMSOL Multiphysics taking into account the electrical, thermal and magnetic properties of the materials from which the growth plant elements are made. A numerical estimate of the heating inhomogeneity of silicon carbide plates over its area during the growth of graphene layers at a given temperature is given. It is shown that the lateral temperature distribution over the area of the plate has radial symmetry with decreasing values towards the center.

An approach of direct bonding of SiC wafers of differing polytypes has been implemented in order to create a template for cubic 3C-SiC homoepitaxy. Heteroepitaxial 3C-SiC layers grown by chemical vapor deposition were transferred onto a hexagonal 6H-SiC wafer. The results of structural characterization showed that the quality of 3C-SiC sublimation epitaxy on the templates is comparable to the level of epitaxy of cubic silicon carbide by chemical vapor deposition method. It was confirmed that the 3С-SiC layer transferred onto the 6H-SiC substrate plays the role of a crystalline "seed" that determines cubic polytype of the overgrown SiC layer.

This work presents a bibliographic review on a promising functional material -porous silicon carbide (PSC).The work reviews selected sources, which describe the main achievements that formed the technological basis for PSC yet in the first decade of the 2000s, but were often ignored in the later research and publications.It is expected that this selection would be useful for specialists in semiconductor physics, engineers, and technologists working in this field.

In this study, two empirical models for the growth of millimetre–thick GaN material with either highly ordered textured or polycrystalline structure on a ceramic substrate by Hydride Vapour Phase Epitaxy (HVPE) are considered. It is suggested that the specific type of the structure of GaN is determined at the nucleation stage and depends on the character of the wetting of the surface of the substrate by the liquid gallium melt.

The results of a study of the optical properties of gallium nitride samples with a highly oriented texture structure grown without the use of traditional semiconductor or sapphire substrates are presented. It is shown that the stacking faults contained in the GaN blocks of the texture of the studied material are self-organized heteropolytype nanostructures, and that the effective luminescence in the ultraviolet spectral region associated with stacking faults I1 in the basal plane is determined by optical transitions of excitons localized near such natural defects in the single-crystalline bulk of the blocks of the GaN texture.

Self-organization mechanisms promoting elimination of cracks in thick GaN layers grown on sapphire substrates are considered on the basis of the experimental results on the fabrication of the layers by Hydride Vapor-Phase Epitaxy on MOCVD-grown GaN/Al2O3 templates. The obtained data support the supposition on the closure of tensile stress-related cracks via diffusion processes and demonstrate the strong contribution of bulk diffusion in addition to surface diffusion discussed earlier.

In this study we related structural properties of GaN grown on ceramic substrate and studied with transmission electron microscopy with the results of photo-and cathodoluminescence investigations. We found that stacking faults in the basal plane were responsible for both strong room temperature visible emission and exciton-related ultraviolet luminescence at cryogenic temperature.

We report on the detailed study of the structural properties of the large-area GaN slabs grown by HVPE method over ceramic support with the use of X-ray analysis with powder diffraction technique. The impact of V/III ratio on the specifics of the crystal structure of the material was studied. It was shown, that depending of growth condition either texture along (00.2) axis, i.e., along c axis in polar GaN, or along (11.0) axis, i.e., normal to so-called m-plane GaN are formed.

Abstract Results of the studies of the properties of single-crystalline bulk β-Ga2O3 grown from the melt are presented. High chemical purity and phase uniformity of the grown material are demonstrated. Raman spectroscopy studies confirmed low energies of optical phonons in β-Ga2O3, which makes it a promising material for laser optics applications.

We present the results of investigations of the transport properties of graphene films obtained by thermodestruction of a 4H-SiC (0001) surface in argon. The charge-carrier concentration in the graphene layer was within 7 × 1011–1 × 1012 cm–2, and the maximum mobility of electrons approached 6000 cm2/(V · s). The achieved parameters of mobility are close to theoretical values calculated for graphene films with intrinsic conductivity on the Si face of SiC at Т = 300 К in the absence of intercalated hydrogen.

Представлены результаты исследования транспортных свойств пленок графена, полученных методом термодеструкции поверхности 4H-SiC (0001) в атмосфере аргона. Величина концентрации носителей заряда в исследуемом графене составила 7·1011-1·1012 cm-2, а максимальные значения подвижности электронов приблизились к 6000 cm2/(V·s). Достигнутые величины подвижности близки к теоретически рассчитанным значениям для графена на Si-грани с собственной проводимостью при T=300 K без водородной интеркаляции. DOI: 10.21883/PJTF.2017.18.45035.16895

A possibility is shown to use substrates with column structure for the growth of thick GaN epitaxial layers with reduced levels of thermoelastic stress and structural defects. A detailed characterization of similar to 600 mu m-thick GaN layers was performed using transmission electron microscopy and optical methods, namely, Raman spectroscopy and photoluminescence. The obtained results showed that the grown material had excellent quality with high uniformity of parameters across the surface of the layers.