In the work monolithic structures of yttrium iron garnet (YIG, Y3Fe5O12) with a thickness of about 2 μm were obtained on ferroelectric ceramic substrates based on PbZr0.45Ti0.55O3 (PZT) and Ba0.4Sr0.6TiO3 (BST). The Y3Fe5O12 layer was deposited by ion beam sputtering deposition on substrates 400 μm thick by sputtering a polycrystalline Y3Fe5O12 target with with argon ions. The heterostructures were crystallized by annealing in air at a temperature of 820 °C for 5 min. The results of the characteristic X-ray radiation method showed that the elemental composition of the monolithic heterostructure corresponds to the specified one. During X-ray studies, it was found that the YIG crystallization process is completed and the resulting structure is single-phase. The results of magnetic and ferromagnetic resonance studies indicate the possibility of using the obtained heterostructures in logic circuits based on spin waves with low scattering, in memory elements, as well as in electrically controlled microwave devices.

A two-component magnetodielectric coating has been obtained based on an organic matrix, namely, photoresist of the FP-9120 series, into which powder Mg(Fe0.7Ga0.3)2Ox has been uniformly incorporated. The coating is characterized by the preservation of the properties of the original components and the uniform distribution of particles. The coating possesses phase stability and stable magnetic properties, which allows it to be used in the microwave region with low losses.

Thin nickel films up to 50 nm thick with bulk-like properties were obtained on quartz and silicon substrates with the ion-beam method by tenfold applying the 'deposition - partial sputtering of a nanosized metal layer' cycle. The use of this technique ensures layer-by-layer film growth due to both the granulation suppression at the early stage of formation through the influence of high-energy metal atoms during film deposition, and argon ions during its partial sputtering. This creates conditions for the strong adhesion of the metal layer to the substrate and, therefore, leads to the growth of continuous nickel films with a high degree of homogeneity. Transition from single to multiple deposition causes a decrease in the root-mean-square roughness of the film surface, as well as an improvement in the thermal stability of the film/substrate structure. The results of optical studies show that the films become more optically homogeneous. The decisive role in their formation is played by the elastic collision of incident metal atoms with stationary atoms of the substrate and the growing metal film.

In the work monolithic structures of yttrium iron garnet (YIG, Y 3 Fe 5 O 12 ) with a thickness of about 2 μm were obtained on ferroelectric ceramic substrates based on PbZr 0.45 Ti 0.55 O 3 (PZT) and Ba 0.4 Sr 0.6 TiO 3 (BST). The Y 3 Fe5O 12 layer was deposited by ion beam sputtering deposition on substrates 400 μm thick by sputtering a polycrystalline Y 3 Fe 5 O 12 target with with argon ions. The heterostructures were crystallized by annealing in air at a temperature of 820 °C for 5 min. The results of the characteristic X-ray radiation method showed that the elemental composition of the monolithic heterostructure corresponds to the specified one. During X-ray studies, it was found that the YIG crystallization process is completed and the resulting structure is single-phase. The results of magnetic and ferromagnetic resonance studies indicate the possibility of using the obtained heterostructures in logic circuits based on spin waves with low scattering, in memory elements, as well as in electrically controlled microwave devices.

In the layered ferromagnetic/ferroelectric structures in the form of cobalt, nickel or permendur layer on a ferroelectric substrate of lead zirconate titanate obtained by ion-beam sputtering --- deposition, relative strains due to mismatch of crystal lattices of mating materials at the metal/substrate in-terface make a more noticeable contribution to the magnetoelectric response than those associated both with the magnetostriction of the ferromagnetic layer and with the piezoelectric effect of the ferroelectric substrate. The structures obtained are characterized by the thermal stability and reproducibility of magnetoelectric characteristics and can be used as converters of magnetic and electrical quantities, for example, in magnetic field sensors and actuators. Keywords: Ion beam sputtering --- deposition, ion beam planarization, ferromagnetic/ferroelectric interface, layered structures, magnetoelectric effect.

Методом ионно-лучевого распыления–осаждения получены слоистые структуры в виде субмикронных слоев никеля на монокристаллических подложках сегнетоэлектрика ниобата лития LiNbO 3 . В данных структурах при комнатной температуре наблюдается интерфейсный магнитоэлектрический эффект, максимальная величина которого в поперечной конфигурации магнитного и электрического полей составляет 108, а в продольной – 4 мВ/А. На основании анализа механических деформаций сделан вывод о значительном вкладе интерфейса в магнитоэлектрическое взаимодействие в полученных структурах Ni/LiNbO 3 . Данные материалы могут найти применение при разработке устройств пьезотехники, а также акустической, оптической и спин-волновой электроники.

— Layered structures in the form of submicron-thick nickel layers on single-crystal lithium niobate (LiNbO 3 ) ferroelectric substrates have been produced by ion beam sputter deposition. At room temperature, the structures exhibit an interfacial magnetoelectric effect, whose largest magnitude is 108 mV/A in a transverse configuration of the magnetic and electric fields and 4 mV/A in a longitudinal configuration. Analysis of mechanical strain leads us to conclude that the interface makes a considerable contribution to magnetoelectric interaction in the Ni/LiNbO 3 structures obtained in this study. The materials can find application in designing piezoelectric devices and acoustic, optical, and spin wave electronics.

In the layered ferromagnetic /ferroelectric structures in the form of cobalt, nickel or permendur layer on a ferroelectric substrate of lead zirconate titanate obtained by ion-beam sputtering – deposi-tion, relative strains due to mismatch of crystal lattices of mating materials at the metal / substrate in-terface make a more noticeable contribution to the magnetoelectric response than those associated both with the magnetostriction of the ferromagnetic layer and with the piezoelectric effect of the fer-roelectric substrate. The structures obtained are characterized by the thermal stability and reproduci-bility of magnetoelectric characteristics and can be used as converters of magnetic and electrical quantities, for example, in magnetic field sensors and actuators.

The microwave properties of structures in the form of the 2 μm iron-yttrium garnet (YIG) films, grown by the ion beam sputtering deposition method on epitaxially mismatched substrates of ferroelectric ceramics based on lead zirconate titanate (PZT, PbZr0.45Ti0.55O3), are discussed. The obtained structures were formed and pre-smoothed by the ion beam planarization substrates with the use of an anti-diffusion layer of titanium dioxide TiO2. The atomic force microscopy showed that the planarization of the substrates allows for reaching a nanoscale level of roughness (up to 10 nm). The presence of smooth plane–parallel interfaces of YIG/TiO2 and TiO2/PZT is evidenced by scanning electron microscopy performed in focused gallium ion beams. Ferromagnetic resonance spectroscopy revealed a broadening in the absorption line of the ferrite garnet layers in the resonance ≈ 100 Oe. This broadening is associated with the presence of defects caused by the of the ceramic substrate non-ideality. The estimated damping coefficient of spin waves turned out to be ~10−3, which is two orders of magnitude higher than in an ideal YIG single crystal. The YIG/TiO2/PZT structures obtained can be used for the study of spin waves.

This article shows that in layered structures representing thin (similar to 2 mu m) cobalt, nickel and permendur layers on ferroelectric ceramics substrates (similar to 400 mu m) the elastic strains at the interface make a more significant contribution to the magnetoelectric effect than the ferromagnetic layer magnetostriction. For obtaining these structures the ion-beam sputtering - deposition after ion-beam planarization of the substrate surface was used. The magnetoelectric voltage coefficient at a frequency of an alternating magnetic field of 1 kHz at room temperature for structures with cobalt is higher than that for structures with nickel and permendur. The structures obtained are thermostable within the temperature range from 25 to +120 degrees C and have reproducible magnetoelectric properties. These structures can find their application as magnetoelectric converters and magnetic fields sensors.

Gold films with a thickness of several tens of nanometers were obtained on silicon and quartz substrates by ion-beam deposition – sputtering. It is shown that the predominant lateral growth of nanoscale metal layers along the substrate surface occurs under exposure to the high-energy component of the sputtered atoms flux. The decisive role in the nanometer gold film for-mation is played by the elastic collision of sputtered metal atoms with atoms of the substrate and the growing film. The application of the manifold deposition – sputtering operation allows sup-pressing the grain formation process and obtaining gold films with better characteristics than those with a single deposition.

Granular films SiO2(Co) exhibit unusual magnetic and magnetotransport properties which are strongly dependent on the composition of the film and material of a substrate. For example, the injection magnetoresistance (IMR) coefficient reaches a giant (GIMR) value of 10(5)% at room temperature in SiO2(Co) films on an n-GaAs substrate. However, the IMR effect is negligible in the case of a similar granular film deposited on the n-Si substrate. In this report, the structural and magnetic properties of granular film SiO2(Co) on Si substrate are studied with the aim to understand the cause of the difference in IMR coefficients for SiO2(Co) thin film deposited on n-GaAs and on n-Si substrates. Investigations were carried out using complementary methods of Polarized Neutron Reflectometry, Grazing Incidence Small-Angle X-ray Scattering, X-ray Reflectometry, Scanning Electron Microscope, and SQUID magnetometry. It is shown that the interface layer between the granular film and Si substrate exhibits metallic rather than magnetic properties and eliminates the GIMR effect. This interface layer is associated with the Si diffusion to Co nanoparticles and the formation of the metallic cobalt silicides.

Uniform gold films with a thickness of several tens of nanometers were obtained for the first time on silicon and quartz substrates by ion-beam deposition-sputtering. It is shown that the predominant lateral growth of nanoscale metal layers along the substrate surface occurs under exposure to the high-energy component of the sputtered atoms flux. The decisive role in the nanometer gold film formation is played by elastic collisions of sputtered metal atoms with atoms of the substrate and growing film. The application of the multiple deposition-sputtering operation allows suppressing the grain formation process and obtaining gold films with better characteristics than those with a single deposition. Keywords: ion-beam sputtering-deposition, nanosized gold film, electric resistance, surface roughness, autoirradiation

Yttrium iron garnet (Y 3 Fe 5 O 12 , YIG) films ~2 μm thick with a nanosized TiO 2 buffer layer on ferroelectric PbZr 0.45 Ti 0.55 O 3 (PZT) and Ba 0.4 Sr 0.6 TiO 3 (BST) ceramic substrates were obtained by ion beam sputter deposition with a mixture of argon and oxygen ions. The produced heterostructures were crystallized in air at 820°С for 5 min. X-ray powder diffraction and characteristic X-ray radiation studies determined that the Y 3 Fe 5 O 12 film in the heterostructures is single-phase, and its elemental composition is the same as the given one. Magnetic measurements showed that the saturation magnetization of the YIG layer on the ferroelectric substrates is reached in a field of 0.2 T and is 0.70–0.85 of the saturation magnetization of bulk single-crystalline Y 3 Fe 5 O 12 .

Yttrium iron garnet (Y3Fe5O12, YIG) films ~2 μm thick with a nanosized TiO2 buffer layer on ferroelectric PbZr0.45Ti0.55O3 (PZT) and Ba0.4Sr0.6TiO3 (BST) ceramic substrates were obtained by ion beam sputter deposition with a mixture of argon and oxygen ions. The produced heterostructures were crystallized in air at 820°С for 5 min. X-ray powder diffraction and characteristic X-ray radiation studies determined that the Y3Fe5O12 film in the heterostructures is single-phase, and its elemental composition is the same as the given one. Magnetic measurements showed that the saturation magnetization of the YIG layer on the ferroelectric substrates is reached in a field of 0.2 T and is 0.70–0.85 of the saturation magnetization of bulk single-crystalline Y3Fe5O12.

2–13 nm gold films were obtained by the method of ion-beam sputtering on silicon and quartz substrates. It is shown that the use of an additional operation of deposition followed by the sputtering of a gold layer of 2–3 nm thickness makes it possible to reduce the electrical resistance and surface roughness of the metal films, in comparison with similar films obtained without its use. The results of measuring the temperature coefficient of resistance of nanosized gold films on silicon substrates allowed us to conclude that the films deposited become continuous at a thickness of 6-8 nm. The results of optical measurements of 10 nm gold films, obtained on quartz substrates, showed that the reflection coefficient of electromagnetic radiation at a wavelength of 850 nm is 2.8 % higher than the corresponding coefficient for the same films obtained without using this operation, and is 83 %. An important role in the formation of nanoscale gold layers is played by the processes of self-irradiation of the growing layer of the high-energy component of the gold atoms flux. When using an additional operation of deposition/sputtering, high-energy gold atoms are implanted into the substrate to a depth of about 2 nm. On the one hand, these atoms are point defects in the surface damaged layer of the substrate; on the other hand, they serve as additional centers of cluster formation. This ensures strong adhesion of the metal layer to the substrate and, therefore, the gold films become continuous and more homogeneous in microstructure. The method of ion-beam deposition can be successfully applied to obtain high-quality conductive optically transparent nanosized gold films.

For the first time, continuous layers of yttrium iron garnet (YIG, Y3Fe5O12) with a thickness of about 2 pm were synthesized on ferroelectric ceramic substrates based on lead titanate zirconate (PZT, PbZr0.45Ti0.55O3). The Y3Fe5O12 layer was deposited by ion-beam sputtering - deposition on PZT substrates of 400 pm thick by sputtering a polycrystalline target of the composition Y3Fe5O12 with a mixture of argon and oxygen ions. Due to preliminary planarization of the PZT surface with a TiO2 layer, a high-quality plane-parallel YIG/PZT interface was obtained, which is confirmed by scanning electron microscopy in combination with the focused ion beam technique. Atomic force microscopy showed that planarization makes it possible to achieve surface smoothness of 10 nm. The YIG/PZT heterostructures obtained in this work are potentially attractive for use in logic circuits based on low-scattering spin waves, memory elements, as well as electrically controlled microwave devices.