Polycrystalline Gd1-xPrxMnO3 (x = 0.00-0.20) ceramics were synthesised to tune lattice distortion and dielectric response. Rietveld refinement confirmed orthorhombic (Pnma) symmetry with increased tolerance factor and suppressed MnO6 Jahn-Teller distortion as Pr3+ replaced Gd3+. Converging Mn-O bond lengths and Raman mode softening indicate reduced octahedral distortion and improved lattice symmetry. Dielectric measurements show enhanced permittivity and non-Debye relaxation, while impedance spectra reveal dual thermally activated processes from grain and grain boundaries. Activation energy decreases from 0.20 eV to 0.15 eV with Pr substitution. Electrical resistivity follows small-polaron hopping at high temperature and variable-range hopping at low temperature. The reduced distortion and enhanced charge mobility yield higher permittivity and lower resistivity. Pr doping thus effectively optimizes the structure-property coupling in GdMnO3, making it a promising multifunctional perovskite ceramic for dielectric and magnetoelectric applications.

This study explores the resistive switching behaviour of epitaxial GdMnO3 (GMO) thin films grown on Nb-doped SrTiO3 (SNTO) (100) substrates using pulsed laser deposition (PLD). XRD analysis confirms orthorhombic structure with strong (100) orientation and out-of-plane/in-plane strain values of -0.246% and + 0.006%, respectively. Atomic force microscopy reveals an island-type growth with average grain size of similar to 17.8 nm and surface roughness of 2.82 nm. The fabricated device exhibits bipolar resistive switching with a high ON/OFF ratio of similar to 10(3) at a low read voltage of 2 V, and a SET threshold voltage of similar to 1.89 V. The device shows stable endurance over 50 switching cycles. The dominant conduction mechanisms are trap-controlled space-charge-limited conduction (SCLC) in the forward bias and Poole-Frenkel emission in the reverse bias. These results underscore the suitability of GMO/SNTO devices for non-volatile memory and neuromorphic computing applications.

This investigation focuses on the fabrication of an n-CdIn2Se4/Pt thin film Schottky diode using the pulsed laser deposition technique. The typical grazing incidence X-ray diffractogram displays a sharp and bright 〈1 1 1〉 characteristic reflection, confirming the formation of polycrystalline CdIn2Se4 thin films. Various microstructural parameters have been calculated for the CdIn2Se4 thin films using the most prominent 〈1 1 1〉 reflection. Hall measurement examination confirmed the n-type conductivity of the CdIn2Se4 thin films. Characterization of the voltage-current curve of the vacuum-fabricated n-CdIn2Se4/Pt thin film Schottky diode confirms the presence of a typical Schottky diode-type junction between CdIn2Se4 and platinum with a good rectification ratio. The principal conducting mechanism of the produced n-CdIn2Se4/Pt thin film Schottky diode is thermionic emission at lower applied biases (≤0.5 V), while the space charge limited conduction mechanism is dominant at higher biases (>0.5 V). The ideality factor values for the n-CdIn2Se4/Pt thin film Schottky diode are in the range of 1.4819 to 1.8102, depending on the temperature (300 K ≤ T ≤ 342 K). The zero-bias barrier height and effective Richardson's constant of the n-CdIn2Se4/Pt thin film Schottky diode are ≃0.8652 eV and ≃1.8771 × 105 A m-2 K2, respectively. The effective density of permitted energy levels is ≃1.5491 × 1024 m-3 in the conduction band of the n-CdIn2Se4 thin films. Additionally, characterization of the voltage-capacitance curve of the n-CdIn2Se4/Pt thin film Schottky diode revealed its zero bias built-in diffusion potential (≃0.8178 V), donor impurity concentration (≃5.9132 × 1021 m-3), and flat-band barrier height (≃0.9525 eV). Based on Anderson's model, several electrical transport parameters were applied to depict the theoretical energy band diagram of the n-CdIn2Se4/Pt thin film Schottky diode. The functional groups present in the CdIn2Se4 thin films deposited on a platinum thin film substrate were determined using Fourier transform infrared spectroscopy.

The partial substitution of monovalent alkali metal K+ at the divalent Ca2+ site in La0.7Ca0.3MnO3 manganites (LCKMO) leads to remarkable structural, electronic, and magnetic modifications. This report combines structural, transport, magneto transport, and X-ray photoelectron spectroscopy (XPS) studies to examine these modifications in LCKMO samples with varying alkali metal content. X-ray diffraction (XRD) confirmed the orthorhombic crystal structure and single-phasic nature, while transport and magnetoresistance studies highlighted the effects of K+ substitution on the metal-insulator transition temperature (TP) and resistivity. X-ray Photoelectron Spectra (XPS) analysis decodes the Mn3+/Mn4+ mixed-valence states, providing insights into the Jahn-Teller (JT) distortions and double-exchange (DE) mechanisms manipulating the observed magnetic behaviour. These findings highlight the carping interplay of structural and electronic modifications in tailoring the functional properties of manganites for potential technological applications.

The Rietveld refinement (RR) method in the FullProf suite is used to evaluate the X-ray diffraction (XRD) data and estimate the thermal and structural parameters of the ternary semiconducting compound α-(phase) CdIn 2 Se 4 .

FTIR spectrum of n-type CdIn 2 Se 4 thin films deposited on amorphous quartz glass substrates pre-coated with platinum at a substrate temperature of ≃550 K.

The theoretical investigations on CdIn2Se4, a ternary semiconducting compound belonging to the II-III2-VI4 family, were accomplished using the SIESTA code. Using density functional theory, the band structure of the CdIn₂Se₄ was proposed. Its semiconducting nature was highlighted by the direct band gap of ≃1.6700 eV. The values of the Fermi energy, the highest occupied molecular orbital, the lowest unoccupied molecular orbital, and Mulliken atomic charges of individual atoms in CdIn₂Se₄ were inferred. A pulsed laser deposition technique deposited CdIn2Se4 thin films on various substrates at different substrate temperatures (Ts). Electron microscopy and an X-ray diffractometer were used to study the morphology and/or crystal structure of CdIn2Se4 films. The CdIn2Se4 films were found to be amorphous when synthesized at lower Ts (< 425 K), single-phase-polycrystalline-stoichiometric when synthesized between 425 K ≤ Ts < 675 K, and polyphase when synthesized at higher Ts (> 550 K). The additional reflection observed in CdIn2Se4 films at higher Ts (> 550 K) is identified due to the characteristic peak of the hexagonal β-phase In2Se3. The ICDD card 01-089-2388 was used to index the electron diffraction and X-ray diffraction results of the tetragonally structured and P-42 m (1 1 1) crystallographic space group α-phase CdIn2Se4 films. The lattice constant and unit cell volume for the (1 1 1) reflection of CdIn2Se4 films have been inferred. For the most substantial (1 1 1) reflection, the stacking fault (5.7992 × 10−3) and unity value of the texture coefficient for the CdIn2Se4 film are extracted. No element/s other than Cd, In, and Se are evident in the CdIn2Se4 thin films’ energy dispersive analysis of X-ray spectra, which revealed the purity of the CdIn2Se4 films. The Raman investigation demonstrates the effective formation of nanocrystalline, strain-influenced CdIn2Se4 films with a prominent Raman mode at 137 cm−1. The DC electrical resistivity, thermal activation energies, band gap energies, Hall coefficient, carrier concentration, and Hall mobility were deduced for CdIn2Se4 films. The implications are addressed.

By capturing the FTIR spectra of substrate temperature modulated CdIn 2 Se 4 thin films, the purity of the films generated at various substrate temperatures was confirmed.

In the work monolithic structures of yttrium iron garnet (YIG, Y3Fe5O12) with a thickness of about 2 μm were obtained on ferroelectric ceramic substrates based on PbZr0.45Ti0.55O3 (PZT) and Ba0.4Sr0.6TiO3 (BST). The Y3Fe5O12 layer was deposited by ion beam sputtering deposition on substrates 400 μm thick by sputtering a polycrystalline Y3Fe5O12 target with with argon ions. The heterostructures were crystallized by annealing in air at a temperature of 820 °C for 5 min. The results of the characteristic X-ray radiation method showed that the elemental composition of the monolithic heterostructure corresponds to the specified one. During X-ray studies, it was found that the YIG crystallization process is completed and the resulting structure is single-phase. The results of magnetic and ferromagnetic resonance studies indicate the possibility of using the obtained heterostructures in logic circuits based on spin waves with low scattering, in memory elements, as well as in electrically controlled microwave devices.

A two-component magnetodielectric coating has been obtained based on an organic matrix, namely, photoresist of the FP-9120 series, into which powder Mg(Fe0.7Ga0.3)2Ox has been uniformly incorporated. The coating is characterized by the preservation of the properties of the original components and the uniform distribution of particles. The coating possesses phase stability and stable magnetic properties, which allows it to be used in the microwave region with low losses.

The cerium oxide (CeO2) ceramics have been synthesized in the current study by employing the sol–gel technique. Synthesized CeO2 ceramics were eyed for their crystal structure and phase purity using X-ray diffraction (XRD). The crystallographic space group (SG) of synthesized CeO2 ceramic is fm3 m (225) , with a single-phase cubic structure. The CeO2 ceramic’s stacking fault morals for the most intense peaks have been calculated ( 8.5325×10^-4 ). A value of unity was obtained for the favored orientation of the crystallites along a crystal plane (hkl) by measuring the texture coefficient (Ci) of each XRD peak of the CeO2 ceramic. Based on the calculations, the CeO2 ceramic has a degree of preferred orientation (σ) of 0.1566. The lattice constant for CeO2 ceramics is 0.5375 nm, which yields a cell volume of 0.1585 nm3 using Miller indices for the prime (1 1 1) plane. Bravais’s theory calculates the distance between crystal planes (dhkl) to understand material growth and infers the significance of CeO2’s (1 1 1) plane. Fullprof suite Rietveld refines XRD data. Numerous methods such as Nelson–Riley (N–R), Scherrer, Stokes–Wilson (S–W), Monshi, Williamson–Smallman (W–S), Williamson–Hall (W–H), size-strain plot (SSP) and Halder–Wagner (H–W) methods have determined CeO2 ceramic’s microstructural parameters such as lattice constant (a), the crystallite size (D), strain ( ε ), dislocation density (δ), stress (σ), Young’s modulus (Y), and energy density (u). Elemental mapping analysis was used to determine the elemental distribution of synthesized CeO2 ceramics. Pycnometers confirmed CeO2’s density (7.2089 gm-cm−3). Fourier transform infrared (FTIR) spectroscopy found an intense band near 1020 cm−1, indicating C=C stretching mode and double bonds in CeO2 ceramics. The UV–VIS–NIR spectrometer recorded CeO2 ceramics’ reflectance spectra at room temperature. The absorption spectra display a pair of clearly visible peaks at 242 and 374 nm. The optical spectra of CeO2 ceramics reveal extinction coefficient (k) and refractive index (η) of 0.2016×10^-4 and 2.40 at characteristic wavelength (λc = 374 nm). Tauc and Kubelka–Munk’s methods determined CeO2 ceramic’s optical bandgap (Eg = 3.32 eV). Near λc, the imaginary ( ε_i ) and real ( ε_r ) dielectric constants are 9.5457×10^-4 and 5.7549, respectively, and the dissipation factor (tan δ) value is 1.6569 × 10–4. Optical (σo) and electrical ( σ_e ) conductivity maxima and minima for CeO2 ceramics occur at 3.34 eV. The values of Urbach’s energy (EU) and Urbach absorption coefficient ( α_0 ) for CeO2 are 0.5006 eV and 0.9176 m−1, respectively. The VELF and SELF measurements of electron energy loss showcase the prerequisite CeO2 peaks at 3.3423 and 4.9600 eV, respectively. CeO2 ceramics emit UV-Blue under UV excitation and are elucidated by the electron transition in photoluminescence at room temperature. The implications are addressed.

Cadmium selenide (CdSe) is a semiconducting compound that belongs to the II-VI family (where II = Zn, Cd, or Hg and VI = S, Se, or Te). The programmed rotating furnace was used to melt 5N pure Cd and Se to stoichiometric extents to synthesize the homogenous bulk CdSe (CS) binary semiconducting compound. The synthesised bulk was examined using X-ray diffraction (XRD), and all of the diffractogram peaks were identified and tracked with JCPDS file 77-2307. Crystal structural evidence points to a wurtzite (hexagonal) form for CdSe, with a space group of P63mc (186). A vigorous XRD peak intensity and a moderate full breadth/width at half maximum (β) (FWHM) of the diffraction peak value in the synthesised CS bulk indicate high levels of crystallinity. The CS bulk's d-interplanar spacings (as determined by Bragg's law and Bravais theory), stacking fault (SF), texture coefficient (Ci), degree of preferred orientation (σ), lattice constants (a and c), and unit cell volume (V) have all been computed. The article presents CS bulk's d-interplanar spacings, stacking fault (SF), texture coefficient (Ci), degree of preferred orientation (σ), lattice constants (a and c), and unit cell volume (V). Investigations into the microstructural characteristics of CS bulk have been conducted. Elastic moduli for the bulk, Voigt shear, Young, and Poisson's ratio have all been calculated. The Debye temperature of the CS bulk has been found by measuring its transverse and longitudinal sound velocities. Energy dispersive analysis of X-rays (EDAX) confirmed the CS bulk's stoichiometry. Using a pycnometer, the synthesised CS compound's density was around 5.670 gm/cm3. Thermal evaporation was used to create thin films (TFs) from bulk CS on quartz glass and highly polished pyrographite substrates at room temperature (RT) (≃303 K). To determine the thickness and surface morphology of CSTFs, scanning electron microscopy (SEM) was employed. An SCS-4200 semiconductor characterisation system was used to evaluate the static current (I)-voltage (V) characteristic of a tungsten/CSTF/pyrographite/brass sandwiched device. A cathode ray oscilloscope (CRO) confirmed the device's dynamic behaviour. The device's conductivity was low when it was amorphous but high when it was crystalline. The production of mems is influenced by the resistive switching states induced by an electric field. Providing incontrovertible evidence from electron microscopy and characterizations of static and dynamic electrical transport, conductive filaments emerged at grain boundaries by switching methods. The implications are analysed in detail.

Thin nickel films up to 50 nm thick with bulk-like properties were obtained on quartz and silicon substrates with the ion-beam method by tenfold applying the 'deposition - partial sputtering of a nanosized metal layer' cycle. The use of this technique ensures layer-by-layer film growth due to both the granulation suppression at the early stage of formation through the influence of high-energy metal atoms during film deposition, and argon ions during its partial sputtering. This creates conditions for the strong adhesion of the metal layer to the substrate and, therefore, leads to the growth of continuous nickel films with a high degree of homogeneity. Transition from single to multiple deposition causes a decrease in the root-mean-square roughness of the film surface, as well as an improvement in the thermal stability of the film/substrate structure. The results of optical studies show that the films become more optically homogeneous. The decisive role in their formation is played by the elastic collision of incident metal atoms with stationary atoms of the substrate and the growing metal film.

In the work monolithic structures of yttrium iron garnet (YIG, Y 3 Fe 5 O 12 ) with a thickness of about 2 μm were obtained on ferroelectric ceramic substrates based on PbZr 0.45 Ti 0.55 O 3 (PZT) and Ba 0.4 Sr 0.6 TiO 3 (BST). The Y 3 Fe5O 12 layer was deposited by ion beam sputtering deposition on substrates 400 μm thick by sputtering a polycrystalline Y 3 Fe 5 O 12 target with with argon ions. The heterostructures were crystallized by annealing in air at a temperature of 820 °C for 5 min. The results of the characteristic X-ray radiation method showed that the elemental composition of the monolithic heterostructure corresponds to the specified one. During X-ray studies, it was found that the YIG crystallization process is completed and the resulting structure is single-phase. The results of magnetic and ferromagnetic resonance studies indicate the possibility of using the obtained heterostructures in logic circuits based on spin waves with low scattering, in memory elements, as well as in electrically controlled microwave devices.

In the layered ferromagnetic/ferroelectric structures in the form of cobalt, nickel or permendur layer on a ferroelectric substrate of lead zirconate titanate obtained by ion-beam sputtering --- deposition, relative strains due to mismatch of crystal lattices of mating materials at the metal/substrate in-terface make a more noticeable contribution to the magnetoelectric response than those associated both with the magnetostriction of the ferromagnetic layer and with the piezoelectric effect of the ferroelectric substrate. The structures obtained are characterized by the thermal stability and reproducibility of magnetoelectric characteristics and can be used as converters of magnetic and electrical quantities, for example, in magnetic field sensors and actuators. Keywords: Ion beam sputtering --- deposition, ion beam planarization, ferromagnetic/ferroelectric interface, layered structures, magnetoelectric effect.

The review article focuses on the growth of thin film and its characterization by UV-Vis-NIR spectroscopy. For UV-Vis-NIR spectroscopy of thin films, they are usually deposited on translucent quartz glass surfaces. The article reports the extraction of various thin film optical parameters viz., absorption coefficient (α), Urbach energy (E u ), optical band gap (E g ), refractive index (n), extinction coefficient (k), dielectric constants, dissipation factor (tanδ) and optical conductivity (σ optical ) by using optical spectra (absorption(A)/transmittance (T)/reflectance (R)). Furthermore, the effect of thin film substrate temperature (T s ) and/or thickness (d) and/or post-deposition annealing temperature (T a ) on various optical parameters is discussed in detail.

Методом ионно-лучевого распыления–осаждения получены слоистые структуры в виде субмикронных слоев никеля на монокристаллических подложках сегнетоэлектрика ниобата лития LiNbO 3 . В данных структурах при комнатной температуре наблюдается интерфейсный магнитоэлектрический эффект, максимальная величина которого в поперечной конфигурации магнитного и электрического полей составляет 108, а в продольной – 4 мВ/А. На основании анализа механических деформаций сделан вывод о значительном вкладе интерфейса в магнитоэлектрическое взаимодействие в полученных структурах Ni/LiNbO 3 . Данные материалы могут найти применение при разработке устройств пьезотехники, а также акустической, оптической и спин-волновой электроники.

— Layered structures in the form of submicron-thick nickel layers on single-crystal lithium niobate (LiNbO 3 ) ferroelectric substrates have been produced by ion beam sputter deposition. At room temperature, the structures exhibit an interfacial magnetoelectric effect, whose largest magnitude is 108 mV/A in a transverse configuration of the magnetic and electric fields and 4 mV/A in a longitudinal configuration. Analysis of mechanical strain leads us to conclude that the interface makes a considerable contribution to magnetoelectric interaction in the Ni/LiNbO 3 structures obtained in this study. The materials can find application in designing piezoelectric devices and acoustic, optical, and spin wave electronics.

In the layered ferromagnetic /ferroelectric structures in the form of cobalt, nickel or permendur layer on a ferroelectric substrate of lead zirconate titanate obtained by ion-beam sputtering – deposi-tion, relative strains due to mismatch of crystal lattices of mating materials at the metal / substrate in-terface make a more noticeable contribution to the magnetoelectric response than those associated both with the magnetostriction of the ferromagnetic layer and with the piezoelectric effect of the fer-roelectric substrate. The structures obtained are characterized by the thermal stability and reproduci-bility of magnetoelectric characteristics and can be used as converters of magnetic and electrical quantities, for example, in magnetic field sensors and actuators.