Silicon carbide (SiC) photodetectors are highly valued for their exceptional stability in harsh environments. However, their wide bandgap (similar to 3.3 eV) fundamentally constrains the spectral response, limiting detection primarily to the ultraviolet regime. To overcome this inherent limitation, we present a SiC-based hot-electron photodetector (HEPD) incorporating a plasmonic electrode featuring a TiN/SiN core-cap disk array. By leveraging the plasmon-induced hot-electron effect, this device achieves exceptionally broad detection capability ranging from 400 to 2100 nm. The detector exhibits a peak responsivity of 0.473 mA/W at 720 nm, representing a 435% enhancement compared to the planar device. A substantial improvement is maintained across the entire 400-2100 nm spectrum, with an average responsivity increase of 374%. This superior performance in spectral coverage and response intensity completely surpasses its Au- and Ag-core counterparts. The peak responsivities of both Au- and Ag-core devices are merely 0.009 and 0.06 mA/W, respectively, which are two orders of magnitude lower. Additionally, by engineering the effective Schottky barrier height, the peak responsivity of the proposed device can be further elevated to 2.33 mA/W, with the detection spectrum broadened to 2600 nm. This work provides a critical theoretical foundation for developing high-performance, broadband SiC photodetectors, paving the way for their application in a wider range of optical sensing scenarios.

Low-cost organic photodetectors (OPDs) based on intermolecular charge transfer (CT) absorption can significantly extend the response spectrum into the near-infrared (NIR) range. However, due to the weak CT absorption, the external quantum efficiencies (EQE) are typically very low in the NIR region. In this work, a photomultiplication OPD (PM-OPD) is developed by introducing a C60:MoO3 multiplication layer, which significantly enhances the EQE of NIR OPDs based on CT absorption. Unlike PM-OPDs that rely on unbalanced donor-acceptor ratios, our strategy preserves CT absorption efficiency. The highest occupied molecular orbital energy level of MoO3 traps photogenerated holes under forward bias, leading to band bending near the Al cathode and facilitating electron injection from the external circuit. Under a forward bias of 15 V, the EQEs exceed 100 % across the wavelength range from 300 nm to 1100 nm, with the EQE reaching an extraordinary 177,236 % at 420 nm. The responsivity and detectivity at 500 nm achieve maximum values of 628 A W- 1 and 1.49 x 10 1 3 Jones, respectively. Under 1000 nm NIR light excitation, EQE reaches 754 %, with corresponding responsivity and detectivity of 6.08 A W- 1 and 1.44 x 10 1 1 Jones. Under reverse bias, the device functions as a photodiode, with no photomultiplication occurring. Our device can respond to NIR light up to 1208 nm under both forward and reverse biases. This work contributes to the development of low-cost, high-performance NIR OPDs.

Lead-free perovskite Cs2AgBiBr6 has emerged as a promising material for constructing stable and environmentally friendly photodetectors (PDs), owing to its excellent stability, non-toxicity, and solution-processability. However, current PDs based on Cs2AgBiBr6 are limited by their operational bandwidth, with spectral detection typically restricted to wavelengths below 700 nm. In this work, we report the successful integration of Cs₂AgBiBr₆ with an organic heterojunction, resulting in a broadband, high-sensitivity, and fast-response PD that exhibits a remarkable spectral response extending up to 1208 nm. Under a bias voltage of -0.3 V, the external quantum efficiencies at 730 nm and 850 nm reached 93% and 78%, respectively. Furthermore, at a wavelength of 850 nm, the device demonstrated a responsivity of 0.53 A/W and a detectivity of 4.85 × 1012 Jones. The response time was recorded at an impressive 548 ns at 532 nm. Additionally, the functionality of the device was successfully demonstrated in the detection of photoplethysmography signals, showcasing its practical applicability. This research offers a promising pathway toward the advancement of cost-effective, broadband, and high-performance PDs.

ABSTRACT Metal halide perovskites (MHPs) offer a revolutionary pathway for next‐generation field‐effect transistors (FETs) because of their exceptional carrier mobilities and cost‐effective processability. However, their transition to practical electronics is significantly challenged by intrinsic instability and imbalanced charge transport. This review systematically examines the evolution of MHP FETs, establishing the fundamental structural–electrical–processing relationships across 3D, 2D (Ruddlesden–Popper and Dion–Jacobson), and quasi‐2D frameworks. We analyze the central dichotomy in the field: N‐type Pb‐based FETs are primarily hindered by intrinsic ion migration and gate‐screening effects, whereas P‐type Sn‐based FETs face a critical stability–mobility trade‐off due to the spontaneous oxidation of Sn 2+ . Furthermore, we detail the core optimization strategies—ranging from compositional engineering to interface modification—that have propelled carrier mobilities toward 100 cm 2 V −1 s −1 . By synthesizing these advancements, this review provides a strategic roadmap for overcoming current bottlenecks, offering essential insights for the design of future high‐speed, bio‐inspired perovskite electronics, and their integration into commercial optoelectronic systems.

Highly sensitive organic photomultiplication photodetectors (PM-OPDs) have important applications in the fields of communications, medicine, and environment. However, the prevalent use of acidity poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT: PSS) hole transport layer (HTL) in PM-OPDs yields undesirable interfacial defects, resulting in the compromise of device performances. To avoid this, the bilayer interfacial engineering is introduced by incorporating an atomically-thick Al2O3 interlayer with MoO3 HTL. It reveals that engineering the bilayer is crucial for the high-quality MoO3 HTL and adjusts Ohmic contact to Schottky contact near anode, which facilitates the suppressed dark current and maximized photocurrent of the device. Besides, the device exhibits the photoresponse to short-wave infrared by P3HT:Y6 complex, because of the intermolecular charge transfer transition at the interface of P3HT and Y6. The results show that the bilayer-PM-OPDs manifest the high external quantum efficiency and responsivity of 5.94 x 103% and 57 A/W at 1200 nm, superior to the MoO3 control device (19.3%, 0.19 A/W, respectively). Simultaneously, the proposed device exhibits the detectivity of 1.28 x 1013 Jones at 1200 nm and a broad dynamic range of 105 and 45 dB at 850 and 1310 nm. This work opens new horizons for high-performance SWIR PM-OPDs in various applications.

The increasing demand for radiation detection in applications like medical diagnostics and security inspection drives scintillator research. Traditional scintillators are limited by toxicity, crystallization challenges, and high production costs. A one-step chemical vapor deposition (CVD) method is developed to produce high-purity, large-area, and uniform Cs3Cu2Cl5 microcrystalline film. This material utilizes a unique self-trapped exciton (STE) emission mechanism, resulting in significant Stokes shift of 241 nm and a high photoluminescence quantum yield (PLQY). It offers new opportunities for converting X-ray and high-energy radiation. It shows a linear RL intensity increase with dose rates (25-188 mu Gy s-1), excellent dose-response linearity, and high absorption coefficients comparable to commercial scintillators. This X-ray imaging system allows for high-resolution visualization of internal chip structures even at low doses. This work establishes a controllable synthesis method for large-area scintillator films and highlights the potential of Cs3Cu2Cl5 microcrystalline film as a next-generation scintillators materials.

Owing to their unique surface properties and instability, soil colloids play important roles in phosphorus (P) migration and loss from agricultural soils. The composition of soil organic matter (SOM) in colloids mediates their association with minerals, which can influence the immobilization of P. Fertilization, as a vital agricultural management practice, not only changes the material composition of farmland soil but also significantly influences the properties and release patterns of soil colloids. The aim of this study was to investigate the effect of SOM on the morphology and content of metal minerals in soil colloids and to explore the differences in the binding mode among SOM, metals, and P and its leaching risk under different fertilization treatments. The content of soil colloidal P under organic fertilizer treatments was 1.3-2.9 times higher than that under inorganic treatments. Soil colloids under organic fertilizer treatments had high organic carbon contents, with a high proportion of aromatic and carboxy carbons. The carboxyl-rich SOM was adsorbed and occluded the interstices of metal crystals, thus inhibiting the transformation into a more crystalline metal. This led to a 1.25-1.70-fold increase in the contents of amorphous Fe and Al (Feox and Alox) in soil colloids. Feox and Alox have more binding sites and can coprecipitate with SOM and P to increase the colloidal P content. Higher colloidal P leaching loss was observed in the organic fertilizer treatments, and the colloidal P concentration in the leachates was significantly correlated with the TOCcoll, Fecoll, and Alcoll concentrations. The reductive dissolution of Fe under anoxic conditions and ion exchange due to an increase in pH are the main factors for colloidal P release. This study suggests that attention should be paid to the risk of colloidal P loss caused by long-term organic fertilizer application.

In the Taihu Lake region, excessive nitrogen (N) use in high-quality japonica rice cultivation presents sustainability and quality challenges. This study explores photosynthetic responses and yield outcomes under varying N rates, optimizing N use efficiency (NUE, the ratio of N absorbed by the plant to the amount of N applied) and minimizing soil N surplus for sustainable high-quality rice production. A two-year field study was conducted using 'SuJing 4699' japonica rice, with N treatments ranging from 0 to 400 kg ha−1 (increments of 80 kg ha−1). The experimental design followed a randomized block design with three replications per treatment to ensure reliable data and valid statistical analysis. Measurements included dry matter accumulation, chlorophyll content, leaf area metrics, photosynthetic rates, and final yield determinations alongside N content, NUE, soil N surplus, and economic analysis. The results showed that optimal yields were achieved at 240 kg ha−1 of N, significantly improving photosynthetic performance and delaying chlorophyll degradation, but no further yield increases were observed at higher rates. This regime maximized NUE with 44.60 kg kg−1 N recovery and 23.75 kg kg−1 agronomic efficiency. Economic analysis supported these findings, with the highest net income and beneficial output-to-input ratios at this N level. The saturation point for yield increase was found to be at an N application rate of 257.85 kg ha−1, beyond which no significant increase in economic benefits was observed. Zero soil N surplus occurred at 127.44 kg ha−1, highlighting a balance between environmental and economic factors. An N application rate between 240 and 257.85 kg ha−1 optimizes photosynthetic efficiency, yield, and economic return in high-quality japonica rice while addressing soil N surplus concerns. This balance ensures sustainable and efficient rice production in the Taihu Lake region, aligning with both environmental and agricultural sustainability objectives.

The increasing demand for radiation detection in applications like medical diagnostics and security inspection drives scintillator research. Traditional scintillators are limited by toxicity, crystallization challenges, and high production costs. A one‐step chemical vapor deposition (CVD) method is developed to produce high‐purity, large‐area, and uniform Cs 3 Cu 2 Cl 5 microcrystalline film. This material utilizes a unique self‐trapped exciton (STE) emission mechanism, resulting in significant Stokes shift of 241 nm and a high photoluminescence quantum yield (PLQY). It offers new opportunities for converting X‐ray and high‐energy radiation. It shows a linear RL intensity increase with dose rates (25–188 µGy s −1 ), excellent dose‐response linearity, and high absorption coefficients comparable to commercial scintillators. This X‐ray imaging system allows for high‐resolution visualization of internal chip structures even at low doses. This work establishes a controllable synthesis method for large‐area scintillator films and highlights the potential of Cs 3 Cu 2 Cl 5 microcrystalline film as a next‐generation scintillators materials.

Fast and sensitive photodetectors (PDs) with broadband spectral responses are crucial in numerous fields, including image sensing, optical communication, and biochemical applications. While organic PDs offer broadband spectral responses, their response speed is typically limited to the microsecond range. This study demonstrates a sensitive, ultrafast PD with a broad spectral response by combining a 2D perovskite layer with an organic heterojunction of poly[(4,8‐bis(5‐(2‐ethylhexyl)thiophen‐2‐yl)benzo[1,2‐b;4,5‐b′] dithiophene‐2,6‐diyl‐alt‐(4‐(2‐ethylhexyl)‐3‐fluorothieno[3,4‐b]thiophene‐)‐2‐carboxylate‐2‐6‐diyl)] (PTB7‐Th) and (2,20‐((2Z,20Z)‐((12,13‐bis(2‐ethylhexyl)‐3,9‐diundecyl‐12,13‐dihydro‐[1,2,5]thiadiazolo[3,4‐e]thieno[2″,30′:4′,50]thieno[20,30:4,5]pyrrolo[3,2‐g]thieno[20,30: 4,5]thieno[3,2‐b]indole‐2,10‐diyl)bis(me‐thanylylidene))bis(5,6‐difluoro‐3‐oxo‐2,3‐dihydro‐1H‐indene‐2,1‐diylidene))dima‐lononitrile) (Y6) as the active layer. The perovskite layer enhances the sensitivity across a wide spectral range due to better absorption at short wavelengths and improves hole mobility. The external quantum efficiency achieves 85% at 335 nm and 72% at 830 nm under a −2 V bias. At 830 nm, the responsivity and detectivity reach 0.5 A W −1 and 2.8 × 10 12 Jones, respectively. A large linear dynamic range of 197 dB is observed at 375 nm. Additionally, the response time is significantly reduced to 2.6 ns by decreasing the RC time constant. The hybrid PD also demonstrates a broad spectral response extending up to 1550 nm, attributed to intermolecular charge transfer absorption between PTB7‐Th and Y6. This work advances the development of low‐cost, broadband, and high‐speed PDs for a wide range of applications.

The intermolecular charge transfer (CT) states within organic donor-acceptor blends are essential for absorbing photon energy below the bandgaps of separate donor and acceptor materials, which could significantly broaden the response spectrum of organic photodetectors (OPDs). However, CT absorption's inefficiency in the near-infrared (NIR) spectrum limits photocurrent generation, restricting detectable wavelengths. Herein, by incorporating an atomic-thick interfacial layer, we have effectively minimized the dark current of ZnPc:C60 OPD, enabling the device to sense light with wavelengths extending up to the telecommunication band of 1550 nm. Raman spectroscopy analysis reveals that engineering the interfacial layer, particularly in terms of material type and layer thickness, is crucial for fully blocking the detrimental chemical reaction between ITO and ZnPc while simultaneously maximizing the photocurrent performance. Responsivity and detectivity of the optimized device can reach 45 mA W-1 and 3.2 x 1011 jones, respectively, under illumination of an 850 nm light source, which are comparable to those of other CT-based OPDs. In addition, the proposed device exhibits a swift response speed of 39 ns, and the response speed at CT absorption wavelengths surpasses that at short-wavelengths attributed to intrinsic absorption. The delayed response speed at short-wavelengths stems from the exciton diffusion process as well as the electron transfer process, and electron transfer process between ZnPc and C60 was confirmed through transient absorption spectroscopy. This work not only overcomes the traditional limitations of CT absorption in the NIR regions but also opens new horizons for high-speed OPDs in various applications. The ZnPc:C60 OPD based on intermolecular charge transfer absorption can sense light up to the telecommunication band by incorporating an atomic-thick Al2O3 layer.

Spin-coated quasi-two-dimensional halide perovskite films, which exhibit superior optoelectronic properties and environmental stability, have recently been extensively studied for lasers. Crystallinity is of great importance for the laser performance. Although some parameters related to the spin-coating process have been studied, the in-depth understanding and effective control of the acceleration rate on two-dimensional perovskite crystallization during spin-coating are still unknown. Here we investigate the effect of solvent evaporation on the microstructure of the final perovskite films during the spin-coating process. The crystallization quality of the film can be significantly improved by controlling solvent evaporation. As a result, the prepared quasi-2D perovskite film exhibits a stimulated emission threshold (pump: 343 nm, 6 kHz, 290 fs) of 550 nm as low as 16.2 mu J/cm(2). Transient absorption characterization shows that the radiative biexciton recombination time is reduced from 738.5 to 438.3 ps, benefiting from the improved crystallinity. The faster biexciton recombination significantly enhanced the photoluminescence efficiency, which is critical for population inversion. This work could contribute to the development of low-threshold lasers.

High sensitivity, filter-free, both red and NIR light bandpass photomultiplication OPDs are developed by the charge injection narrowing, using a minimal amount of Y6. The proposed OPDs have the potential application of cold metal detection.

Quasi -two-dimensional perovskites have attracted widespread interest in developing low-cost high -quality small lasers. The nano cavity based on topologically protected valley edge states can be robust against special defects. Here, we report a high -quality two-dimensional perovskite topological photonic crystal laser based on the quantum valley Hall effect. By adjusting the position of the air holes relative to the pillar, radiation leakage in topological edge states is reduced to a large extent, electric field distribution becomes more uniform and the quality factor can be as high as 3.6 x 104. Our findings could provide opportunities for the development of high -power, stable perovskite lasers with topological protection.

Objective The photomultiplication organic photodetector based on trap-assisted carrier tunneling mechanism not only has high sensitivity but also simplifies system design and effectively improves the weak light detection performance of the photodetector. At present, photomultiplication organic photodetectors mainly focus on the visible range and have relatively few responses in the near-infrared region. Detection in the near-infrared region has broad application prospects in many fields and the demand is becoming increasingly urgent. Intermolecular charge transfer is a low-cost method for achieving near-infrared absorption in organic photomultiplier detectors, which can effectively expand the response band of devices. However, the absorption is low and the response is very weak at long wavelengths. The photomultiplication type devices can amplify weak photocurrent signals and improve device performance. Therefore, by introducing a small amount of organic acceptor Y6 in the P3HT active layer, we fabricate a photomultiplication type organic photodetector. Due to the intermolecular charge transfer between P3HT and Y6, the response band of the device can be extended to 1310 nm, which is superior to the reported near-infrared multiplication type organic photodetectors. By introducing an atomic level thickness of Al2O3 between the hole transport layer and the active layer, the device can work under both positive and negative biases. The external quantum efficiency of the device at 860 nm reaches 800%, with a detectivity of 5. 6x 1011 Jones. The external quantum efficiency of the device at 1310 nm reaches 80. 4%, and the specific detectivity reaches 5. 13 x 10(10) Jones. This work can promote the development of near-infrared photomultiplication organic photodetector. Methods Firstly, the cleaned ITO substrates are dried by nitrogen gas and transferred to a glove box. PEDOT:PSS is diluted with anhydrous ethanol in a volume ratio of 1:9 and is span-coated onto the ITO substrate to form a hole transport layer. Then, the Al2O3 interface modification layer is deposited by atomic layer deposition equipment. Subsequently, the active layer is formed by spin-coating P3HT:Y6 mixture solution, with a P3HT and Y6 ratio of 100:1 in weight. Finally, the Al electrode is deposited on the active layer by thermal evaporation. The bright and dark currents of the device are obtained by a digital source meter Keithley 2400 and different light sources in a sealed and room temperature state. The testing of external quantum efficiency and responsiveness is performed in a dark shielding box, with ITO as the anode connecting to the positive pole of the power supply and Al as the cathode connecting to the negative pole. The digital source meter Keithley 2400 is adopted to apply different voltages, and a femtosecond laser is utilized as the light source. The light intensity is attenuated to a specified size by an attenuation plate, and the dark current and bright state J-V curves under different light sources are collected. Finally, the external quantum efficiency and responsivity data are obtained through calculation (the data has been background deducted). The linear dynamic range, noise current, and specific detection rate of the device are tested, and the performance of the device is comprehensively analyzed. A spectrophotometer instrument is leveraged to characterize the ultraviolet visible near-infrared absorption spectrum. In addition, the transmission spectrum, reflection spectrum, and film thickness of the device are also tested. Results and Discussions Al2O3 modified device with a structure of ITO/PEDOT:PSS/Al2O3/P3HT:Y6 (100:1)/ Al and a control device without Al2O3 are both fabricated. We verify that the Al2O3 interface modification layer can greatly reduce the dark current of the device and enable the device to achieve bidirectional bias response (Fig. 1). Next, the Al2O3 modified device is characterized, and the device can respond to 1310 nm. The weak light detection limit of the device at 505 nm can reach 7. 8 nW/cm(2). When the optical power density is 3. 8x10(-4) mW/cm(2), the external quantum efficiency of the device at 860 nm is 800%, with a specific detectivity of 5. 6x10(11) Jones. When the optical power density is 3. 67x 10(-2) mW/cm(2), the external quantum efficiency of the device at 1310 nm is 80. 4%, with a specific detectivity of 5. 13x 10(10) Jones. Under the irradiation of visible light at 505 nm and near-infrared light at 860 nm, the device has a dynamic range of over 125 dB and 90 dB, respectively (Fig. 2 and Fig. 3). The comprehensive performance of the device has certain advantages compared to the near-infrared organic photomultiplier detectors prepared in recent years. By introducing an organic receptor Y6 with light absorption ability in the near-infrared region, the device effectively promotes the injection of holes from external currents as an electron trap and interacts with P3HT, expanding the corresponding band and achieving high sensitivity detection in the near-infrared region (Fig. 4). Conclusions A low-cost and highly sensitive near-infrared photomultiplication organic photodetector with a structure of ITO/PEDOT:PSS/Al2O3/P3HT:Y6/Al is reported. By adding Al2O3 as an interface modification layer, the dark current of the device is significantly reduced, resulting in a device that can respond in both forward and reverse bias directions. Adding a small amount of Y6 to the active layer can achieve a wide spectral response from UV visible to near-infrared, and the response wavelength can be extended to 1310 nm. The external quantum efficiency of the device at 860 nm reaches 800%, with a specific detectivity of 5. 6 x 10(11) Jones. The external quantum efficiency of the device at 1310 nm reaches 80. 4%, and the specific detectivity reaches 5. 13x10(10) Jones. These properties have certain advantages in reported near-infrared photomultiplication organic photodetector and can promote the development of near-infrared photomultiplication organic photodetectors.

The reliable observation and accurate estimates of land–atmosphere water vapor (H2O) flux is essential for ecosystem management and the development of Earth system models. Currently, the most direct measurement method for H2O flux is eddy covariance (EC), which depends on the development of fast-response H2O sensors. In this study, we presented a cost-efficient open-path H2O analyzer (model: HT1800) based on the tunable diode laser absorption spectroscopy (TDLAS) technique, and investigated its applicability for measuring atmospheric turbulent flux of H2O using the EC method. We prepared two HT1800 analyzers with lasers that operate at wavelengths of 1392 nm and 1877 nm, respectively. The field performance of the two analyzers was evaluated through inter-comparative experiments with LI-7500RS and IRGASON, two of the most commonly used H2O analyzers in the EC community. Water vapor densities measured by the three types of analyzers had high overall agreement with the reference sensor; however, they all experienced drift. The mean density drifts of HT1800, LI-7500 and IRGASON were 3.7–5.2%, 4.0% and 3.8%, respectively. Even so, the half-hourly H2O fluxes measured by HT1800 were highly consistent with those by LI-7500RS and IRGASON (with a difference of less than 2%), suggesting that HT1800 can obtain H2O fluxes with high confidence. The HT1800 was also proved to be suitable for EC application in terms of data availability, flux detection limit and response to the high-frequency turbulent variation. Furthermore, we investigated how the spectroscopic effect influences the measurements of H2O density and flux. Despite the fact that the 1392 nm laser was much more susceptible to the spectroscopic effect, the fluxes after correcting for this bias showed excellent agreement with the IRGASON fluxes. Considering the cost advantage in laser and photodetector, the HT1800 analyzer using a 1392 nm infrared laser is a promising and economical solution for EC measurement studies of water vapor.