In this work, we present the results of a systematic experimental study of linear and parametric spin wave resonant excitation accompanied by spin currents (spin pumping) in a multifrequency composite bulk acoustic wave resonator with a ZnO-YIG-GGG-YIG/Pt structure. The features of magnetic dynamics excitation in YIG films due to magnetoelastic coupling with acoustic thickness modes of various polarizations are studied. Acoustic spin waves and spin pumping are detected by simultaneous frequency-field mapping of the inverse spin Hall effect voltage and the resonant frequencies of thickness extensional modes. In the parametric range of frequencies and fields, acoustic spin pumping induced by both shear and longitudinal polarization modes was observed. Linear acoustic spin waves are excited only by shear thickness extensional modes because longitudinal acoustic waves do not couple with the magnetic subsystem in linear regime.

It was shown for the first time that when nickel is deposited onto a heated gallium antimonide substrate, diffusion of antimony atoms from the substrate into the growing film occurs and a nickel antimonide film is formed, which has an axial texture with an axis perpendicular to the film plane along the (101) direction.

A technique for obtaining vanadium oxides of various stoichiometries from vanadyl isopropoxide by chemical vapor deposition is demonstrated. Various vanadium oxides from the Magnelli series have been obtained. Thin-film coatings are applied to the surface of silicon and sapphire. Coatings deposited in an argon flow at temperatures from 220 ˚C to 290 ˚C were evaluated by transmission spectra, Raman scattering and X-ray diffraction. Four oxides (V3O5, VO2, V6O13, V2O5) with different ratios were found in the synthesized amorphous structures. In a number of coatings on silicon substrates, a phase transition of the second kind with a jump in electrical resistance up to 10 times at a temperature of 69 ˚C, was recorded.

Acoustic resonance spectroscopy (ARS) is an informative analytical method that yields information about thicknesses and acoustic properties of layers in a multilayer structure representing a high-overtone bulk acoustic wave resonator (HBAR). Since the HBAR spectrum has many resonance features, the development of automatic methods for its processing is an urgent task. In this study, a method for extracting ARS data from a signal distorted by a RF measuring path without additional measurements of reference impedances (calibration) is proposed, which brings the spectrum to a form convenient for automatic processing and significantly expands the range of the ARS application. The method is especially relevant for processing HBAR spectra with a low excitation efficiency. As an example of such processing, the central frequencies and effective widths of more than a thousand resonant peaks are determined and, based on this, the frequency dependence of the acoustic attenuation is established for a new material: optical ceramics based on doped yttrium aluminum garnet nanoparticles.

Films of hafnium oxide (HfO2) were synthesized on a silicon substrate by magnetron sputtering of a target with a similar composition. The results of studies of the structural composition of HfO2 films and the electrical properties of metal-insulator-semiconductor (Ni-HfO2-n-Si) structures are presented.

The hybrid high overtone bulk acoustic wave resonators (HBARs) consisting of a piezoelectric film transducers and gallium gadolinium garnet substrates with yttrium iron garnet films (YIG-GGG-YIG) are used for experimental excitation and detection of acoustically driven spin waves (ADSWs). Two types of HBAR transducers made of Al-ZnO-Al films (differed through the electrodes' geometry) were deposited onto YIG-GGG-YIG trilayers with different YIG film thicknesses and doping levels and served for excitation of multimode HBAR at gigahertz frequencies. ADSWs were detected by measuring the shifts of resonant HBAR modes in a tangential external magnetic field when the conditions for magnetoelastic resonance (MER) were satisfied. It was shown that the design of the transducer with a continuous bottom electrode provides all acoustical excitation of spin waves (pure ADSWs), suppressing the additional inductive magnetic dynamics excitation due to the electrodes' geometry. The theoretical study of the HBAR spectrum in a magnetic field showed that the resonance harmonics in the MER region can either almost continuously transfer from one to another, or decay and form an evident magnetoelastic gap. In this case, the shift of resonant frequencies can achieve several intermodal distances. The results obtained are important for applications of HBAR-based devices in spintronics and magnonics.

A technique is proposed for obtaining films of barium hexaferrite on sapphire with (0001) orientation by high-frequency magnetron sputtering of a stoichiometric BaFe 12 O 19 target followed by annealing. The X-ray diffraction analysis and Raman spectrometry carried out showed the possibility of crystallization of oriented films without using correction of the target composition.

Hafnium oxide (HfO 2 ) films are synthesized on silicon substrates using magnetron sputtering under various technological conditions. The results on the structural composition of HfO 2 films and the electrical properties of metal–insulator–semiconductor heterostructures (Ni– HfO 2 –Si) based on them are presented.

The field dependences of the electrical conductivity of Pt/diamond-like carbon (DLC)/Pt structures based on thin layers of high-resistivity DLC are studied. It is shown that the nonohmic behavior of the conductance of structures is described by the Frenkel–Poole formula and is related to correlated distribution of charges under conditions of their percolation hopping transport between low-resistance DLC regions.

Films of hafnium oxide (HfO2) were synthesized on a silicon substrate by magnetron sputtering of a target with a similar composition. The results of studies of the structural composition of HfO2 films and the electrical properties of metal-insulator-semiconductor (Ni-HfO_2-n-Si) structures are presented Keywords: Metal-dielectric-semiconductor (MDS) structures, hafnium oxide (HfO2) ferroelectric films, piezoelectric response, microstructure, electrical properties.

Hafnium oxide (HfO_2) films were synthesized onto silicon substrates by magnetron sputtering under various technological conditions. Research results presented structural composition of HfO2 films and electrical properties of heterostructures metal-insulator-semiconductor (Ni–HfO_2–Si) based on them.

To increase the efficiency of devices based on piezoelectric transducers made of zinc oxide, it is proposed to use single-crystal layers of platinum as the bottom electrode. Epitaxial single-crystal films of zinc oxide on metal have been obtained. It is shown that this combination of layers makes it possible to minimize the mismatch in the lattice parameters of the film and substrate, which significantly improves the quality of the obtained piezoelectric film.

Acoustic resonance spectroscopy (ARS) is an informative analytical method that yields information about thicknesses and acoustic properties of layers in a multilayer structure representing a high-overtone bulk acoustic wave resonator (HBAR). Since the HBAR spectrum has many resonance features, the development of automatic methods for its processing is an urgent task. In this study, a method for extracting ARS data from a signal distorted by a RF measuring path without additional measurements of reference impedances (calibration) is proposed, which brings the spectrum to a form convenient for automatic processing and significantly expands the range of the ARS application. The method is especially relevant for processing HBAR spectra with a low excitation efficiency. As an example of such processing, the central frequencies and effective widths of more than a thousand resonant peaks are determined and, based on this, the frequency dependence of the acoustic attenuation is established for a new material: optical ceramics based on doped yttrium aluminum garnet nanoparticles.

The applied stations: ISCRA (energy range of 150–500 MeV/n), SOCHI (ion energy up to 3.2 MeV/n), and SIMBO (energy range 500–1000 MeV/n) are under construction as a part of the NICA accelerator complex. These stations will be used for single event effects testing of as capsulated, so decapsulated microchips, and for radiobiological research and modelling of influence of heavy charged particles on cognitive functions of animal's brain, respectively. This paper presents the applied stations description. Mounting and commissioning of the SOCHI station are completed. The ISCRA and SIMBO stations mounting is planned in early 2022. Beam runs at the SOCHI were performed in December 2021, at the ISCRA and SIMBO are planned in fall 2022.

Materials with high thermo mechanical properties are required as laser media for high-powered lasers. One of such materials is lutetium-aluminum garnet (LuAG) doped with ytterbium. In the present work, we discuss for the first time a full comparative study of 5% Yb-doped LuYAG ceramics with variation Lu/Y ratio. Samples were prepared with addition of B2O3, MgO and SiO2 which were used as sintering aids. Grain sizes, shrinkage curves, lattice constants and transmission spectra were measured for all samples. Thermal conductivity was measured in a wide temperature range for all studied samples. Output power of 12 W and 60% slope efficiency were obtained on the 5% Yb:LuAG disk laser.

For the first time, epitaxial films of hematite (α-Fe2O3) and maghemite (γ-Fe2O3) were obtained on LiNbO3 substrates by the method of reactive magnetron high-frequency sputtering. The performed X-ray diffraction analysis of the obtained films showed that a small lattice mismatch allows one to obtain by this method structurally perfect epitaxial Fe2O3 layers with different polymorphic modifications on LiNbO3 substrates.

A two-stage process of sintering yttrium iron garnet ceramics for magnetron sputtering has been proposed and tested. It has been shown that uniaxial pressing of compacts results in the synthesis of nanosized crystallites of yttrium iron garnet. The crystal structure of the obtained ceramic samples has been studied. Epitaxial films are grown on yttrium aluminum garnet substrates by magnetron sputtering of the obtained target.

Problem statement. Development of methods for producing large-area isolated graphene under controlled conditions is an important task, which is primarily interested in the unique physical and chemical properties of graphene: high electrical and thermal conductivity, dependence of electronic characteristics on the presence of attached different radicals on the graphene surface, adjustable band gap, and high carrier mobility. Goal. It is necessary to develop regimes for producing thin graphite films on a dielectric substrate by annealing the structure (0001)Al2O3/(111)Ni/ta-C with a minimum density of defects in the crystal structure by the heteroepitaxial synthesis method. Results. The method of obtaining thin graphite films on a dielectric substrate by annealing the structure (0001)Al2O3/(111)Ni/ta-C has been tested. The method is based on the catalytic decomposition of hydrocarbons on the single crystal surface of a metal catalyst, diffusion and crystallization of carbon on the reverse side of the metal film. The surface of the obtained carbon films with a thickness significantly exceeding one atomic layer is uniform within the 5x5 mm samples. Varying the annealing temperature and time, as well as the initial amount of carbon, will further allow to control the amount of carbon involved in the formation of atomic layers. Practical significance. The described method is promising for developing a scalable technological process for obtaining largearea graphene on a dielectric substrate.

Nanoribbons from different materials, such as graphene and topological insulators, are currently intensively studied as structures needed in nanoelectronics and spintronics devices. Consequently, it is important to consider the technology that would allow one to produce such structures with the best achievable space homogeneity and perfect crystal structure. We studied the possibility to increase the homogeneity of etching “microwire-on-insulator”-type structures. The studies were carried out by computer simulations and by technological experiments. It was shown that modulating the potential of the substrate by a noise-like signal can significantly increase the quality of the profile of the cross section of the ion beam that exits from the plasma toward the structure in the plasma processing reactor with a remote plasma source. To do this, we designed and tested the source of noise-like signal and carried out experimental etching of test ribbons from nickel film. These experiments confirmed the efficiency of the proposed method.