An interinfluence effect of neighboring metal-ferroelectric-semiconductor (MFS) membrane structures synthesized on the common insulating layer was found. Different voltages applied to the field electrodes of the two adjacent structures produce, in the free-of-substrate ferroelectric film surrounding the elements, common inhomogeneous deformation and polarization fields through which the interinfluence occurs. The interinfluence phenomenon is strong enough: the HF capacity of the MFS object increases by up to 3 times after applying an up to 5 V bias to the adjacent similar element for which the C-V characteristics are measured. The interinfluence phenomenon was observed in thin-substrate structures whose geometry was far from that of perfect membranes: the thickness of the ferroelectric layer was 66 times smaller than that of the semiconductor. Interinfluence shows itself at each hysteresis loop of the MFS structure C-V characteristic in the transition section between the two plateaus. The capacity of the test specimen increases with the absolute bias value and depends but slightly on the bias polarity applied to the adjacent object.

Films of hafnium oxide (HfO2) were synthesized on a silicon substrate by magnetron sputtering of a target with a similar composition. The results of studies of the structural composition of HfO2 films and the electrical properties of metal-insulator-semiconductor (Ni-HfO2-n-Si) structures are presented.

Ferroelectric films of the composition Ba 0.8 Sr 0.2 TiO 3 (BST) were synthesized on platinized silicon substrates by RF sputtering. Top electrodes made of nickel, aluminum, copper and chromium were formed on the grown films by electron beam sputtering. The results of studies of the electrophysical properties of the obtained metal-dielectric-metal (MDM) heterostructures (Me-BST-Pt-Si) are presented. Keywords: ferroelectric BST films, metal-dielectric-metal (MDM) structures, microstructure, electrophysical properties.

Hafnium oxide (HfO 2 ) films are synthesized on silicon substrates using magnetron sputtering under various technological conditions. The results on the structural composition of HfO 2 films and the electrical properties of metal–insulator–semiconductor heterostructures (Ni– HfO 2 –Si) based on them are presented.

Сегнетоэлектрические пленки состава Ba0.8Sr0.2TiO3 (BST) синтезированы на платинированные кремниевые подложки методом ВЧ-распыления. На выращенные пленки методом электронно-лучевого распыления сформированы верхние электроды из никеля, алюминия, меди и хрома. Представлены результаты исследований электрофизических свойств полученных гетероструктур металл--диэлектрик--металл (МДМ) (Ме-BST-Pt-Si). Ключевые слова: сегнетоэлектрические пленки BST, структуры металл--диэлектрик--металл (МДМ), микроструктура, электрофизические свойства.

Hafnium oxide (HfO_2) films were synthesized onto silicon substrates by magnetron sputtering under various technological conditions. Research results presented structural composition of HfO2 films and electrical properties of heterostructures metal-insulator-semiconductor (Ni–HfO_2–Si) based on them.

Films of hafnium oxide (HfO2) were synthesized on a silicon substrate by magnetron sputtering of a target with a similar composition. The results of studies of the structural composition of HfO2 films and the electrical properties of metal-insulator-semiconductor (Ni-HfO_2-n-Si) structures are presented Keywords: Metal-dielectric-semiconductor (MDS) structures, hafnium oxide (HfO2) ferroelectric films, piezoelectric response, microstructure, electrical properties.

Manifestation of the Franz–Keldysh effect was found under indirect daylight illumination of Al‒n+-Si:P–SiO2–(100) n-Si with ultrafine (3.7 nm) oxide. It is shown that the use of illumination even at low field voltages (up to 3 V) leads to an increase in the tunneling current through the oxide compared to the current in darkness by three orders of magnitude. A model is constructed for the influence of radiation on the process of electron tunneling through an ultrathin insulating layer. First, as a result of the Franz–Keldysh effect, a radiation quantum is captured by an electron and a given charge carrier tunnels through the barrier at a higher level compared to darkness. After a charge carrier enters a semiconductor, its energy is sufficient for several acts of electron–hole pair production during the impact ionization of silicon.

High-frequency measurements of the capacitance and conductivity of Ni-Ba0.8Sr0.2TiO_3-Pt and Ni-Ba0.8Sr0.2TiO_3-Si objects with a ferroelectric thickness of 120 nm in the paraelectric phase were carried out. It is shown that in the entire range of external voltages, the electric field practically does not penetrate Si. The conclusion made earlier about the reasons for the weak manifestation of the field effect is confirmed --- the polarization of the ferroelectric layer is almost completely shielded by the charges of electronic traps at the Ba0.8Sr0.2TiO_3-Si contact. It is noted that a sharp decrease due to passivation of the activity of surface traps will allow implementing transistors based on metal-BST-Si structures with a working surface channel of non-basic charge carriers and will ensure the construction of high-quality FeRAM non-volatile memory cells. Keywords: metal-dielectric-semiconductor-structures, metal-dielectric-metal-structures, ferroelectric films of the composition Ba0.8Sr0.2TiO3, high-frequency impedance.

Studies have been carried out on the effect of heating and a strong field, but pre-breakdown, effects on high-frequency characteristics of the impedance of heteroepitaxial structures Ni-Ba0.8Sr0.2TiO3-pSi with a ferroelectric thickness of 50 nm. It was shown, that regardless of the polarity of the field stress, characteristics shifted towards a positive bias, and the width of hysteresis loops decreased; plateau levels remained virtually unchanged. Heating up to 121oC led to a change in levels of the upper plateau of characteristics: for the capacity it decreased, and for the conductivity it increased; branches on the loop not only narrowed and shifted, but changed places in comparison with the original dependence (loop reverse). These results can be explained: under the field action, by the generation of additional electronic states, localized in the buffer layer at the Si-Ba1-xSrxTiO3 interface, and by heating, by the appearance of delay effects due to the development of fluctuation processes, underlying the smearing of the phase transition from ferroelectric to paraelectric condition. Keywords: High-frequency field characteristics of the impedance, the field stress, hysteresis loops, the generation of additional localized electronic states, delay effects, fluctuation processes, smearing of the phase transition.

Films of the composition Ba0.8Sr0.2TiO3 (BST) were synthesized by the method of high-frequency (HF) sputtering on the buffer layer of a ferroelectric film of the composition PbZrxTi1-xO3 (PZT). Comparative results of electrophysical properties of three different metal--dielectric--metal (MDM)-structures are presented: Pt/BST/Ni, Pt/PZT/Ni, and Pt/PZT-BST/Ni. Keywords: metal--dielectric--metal structures, ferroelectric films of composition Ba0.8Sr0.2TiO3, a buffer layer, electrophysical properties.

Results of studies of ultrathin silicon oxide (37 Å)–polysilicon structures as prospects of substrates for objects with ferroelectric insulating layers are presented. It turned out that in structures with SiO 2 obtained by high-temperature oxidation, there are low leakage currents associated with tunneling conduction, and the concentration of localized electronic states is three orders of magnitude lower than in objects with native oxide. These circumstances open prospects of creating ferroelectric FeRAM non-volatile memory cells operating on such silicon oxide.

Studies have been carried out on the effect of heating and a strong field, but pre-breakdown, effects on high-frequency characteristics of the impedance of heteroepitaxial structures Ni-Ba0.8Sr0.2TiO3-рSi with a ferroelectric thickness of 50 nm. It was shown, that regardless of the polarity of the field stress, characteristics shifted towards a positive bias, and the width of hysteresis loops decreased; plateau levels remained virtually unchanged. Heating up to 121°C led to a change in levels of the upper plateau of characteristics: for the capacity it decreased, and for the conductivity it increased; branches on the loop not only narrowed and shifted, but changed places in comparison with the original dependence (loop reverse). These results can be explained: under the field action, by the generation of additional electronic states, localized in the buffer layer at the Si-Ba1-xSrхTiO3 interface, and by heating, by the appearance of delay effects due to the development of fluctuation processes, underlying the smearing of the phase transition from ferroelectric to paraelectric condition.

The results of investigations of silicon–ultrathin oxide (42 Å)–polysilicon structures resistant to field damages are presented. It is found that the total charge exchange of localized electronic states and minority charge carriers concentrated at the substrate–insulator interface, which occurs with a change in the field voltage, is close to the same characteristic of structures with an oxide thickness of 37 Å. The current flowing through SiO2 increases with voltage much stronger in the enrichment state of the semiconductor than in its depletion state. Moreover, the asymmetry of the I–V characteristics with respect to the polarity of the voltage drop across the insulator in SiO2 samples with a thickness of 42 Å is more pronounced than in structures with an oxide of 37 Å. An explanation for this asymmetry is possible, if the potential relief in the insulator has a peak, which is significantly shifted to the oxide–polysilicon interface, and the potential on the branch on the semiconductor side significantly decreases towards the contact with the substrate.

Пленки состава Ba0.8Sr0.2TiO3 (BST) синтезированы методом высокочастотного (ВЧ) распыления на буферный слой сегнетоэлектрической пленки состава PbZrxTi1-xO3 (PZT). Представлены сравнительные результаты электрофизических свойств трех различных МДМ-структур: Pt/BST/Ni, Pt/PZT/Ni и Pt/PZT-BST/Ni. Ключевые слова: структуры металл--диэлектрик--металл, сегнетоэлектрические пленки состава Ba0.8Sr0.2TiO3, буферный слой, электрофизические свойства.

Проведены высокочастотные измерения емкости и проводимости объектов Ni-Ba0.8Sr0.2TiO_3-Pt и Ni-Ba0.8Sr0.2TiO_3-Si с толщиной сегнетоэлектрика 120 nm в параэлектрической фазе. Показано, что во всем диапазоне внешних напряжений электрическое поле в Si практически не проникает. Подтвержден сделанный ранее вывод о причинах слабого проявления эффекта поля --- происходит практически полное экранирование поляризации сегнетоэлектрического слоя зарядами электронных ловушек на контакте Ba0.8Sr0.2TiO_3-Si. Отмечено, что резкое снижение за счет пассивации активности поверхностных ловушек позволит реализовать транзисторы на базе структур металл-BST-Si с работающим поверхностным каналом неосновных носителей заряда и обеспечит построение высококачественных ячеек энергонезависимой памяти FeRAM. Ключевые слова: металл--диэлектрик--полупроводник-структуры, металл--диэлектрик--металл-структуры, сегнетоэлектрические пленки состава Ba0.8Sr0.2TiO3, высокочастотный импеданс.

Results of studies of silicon−silicon-ultrathin oxide (42 A˚ )−polysilicon structures structures stabile resistant to field damage are presented. It was found that the total recharging of localized electronic states and minority charge carriers, concentrated at the substrate-insulator interface, which occurs with a change in the field voltage and is close to the same characteristic of structures with an oxide thickness of 37 A˚ . The current, flowing through SiO2, in the enrichment state of the semiconductor increases with increasing voltage much more strongly than in the state of depletion. Moreover, the asymmetry of current-voltage characteristics in relation to the polarity of the voltage, falling on the insulator in samples with a thickness of 42 A˚ SiO2 is more pronounced than in structures with an oxide of 37 A˚ . An explanation for this asymmetry is possible, if the potential relief in the insulator has a maximum, significantly shifted to the oxide−polysilicon interface, and the potential on the branch from the semiconductor side significantly decreases to the contact with the substrate.

Films of the composition Ba0.8Sr0.2TiO3 (BST 80/20) are synthesized on a silicon substrate by the method of the high-frequency sputtering of a polycrystalline target. The results of investigations of the film composition, the electrophysical properties of capacitor structures based on them, and the dependence of these properties on the material (Al, Cu, Ni, Cr) of the upper electrode are presented.

Пленки состава Ba0.8Sr0.2TiO3 (BST 80/20) синтезированы на кремниевой подложке методом высокочастотного распыления поликристаллической мишени. Представлены результаты исследований состава пленок, электрофизических свойств конденсаторных структур на их основе и зависимости этих свойств от материала верхнего электрода (Al, Cu, Ni, Cr). Ключевые слова: структуры металл--диэлектрик--полупроводник, сегнетоэлектрические пленки состава Ba0.8Sr0.2TiO3, микроструктура, электрофизические свойства.