Atomic-layer-deposited (ALD) ultrathin In2O3 thin-film transistors (TFTs) are highly promising for applications in state-of-the-art displays, flexible electronics, and back-end-of-line (BEOL) integration. However, these TFTs often suffer from pronounced bias-stress instability, which is further magnified under humid ambient. To address this issue, we herein propose a bilayer strategy, where an InGaZnO (IGZO) layer is directly sputtered on the ALD In2O3 channel layer to afford In2O3/IGZO TFTs. The added IGZO layer not only can prevent any direct gas adsorption on the sensitive In2O3 surface, but it also can substantially reduce the surface field strength near S/D to mitigate the risk of water electrolysis from a humid ambient. As a result, the In2O3/IGZO TFTs show one-order-of-magnitude improvement in threshold voltage (Vth) shift under both PBS and NBS conditions in high-humidity ambient (85% relative humidity (RH).

A novel plasma-assisted fluidized-bed atomic layer deposition process to synthesize Pd-Cu bimetallic nanoparticles is reported, using palladium hexafluoroacetylacetonate, copper(I)- N, N′ -di- iso -propylacetamidinate and H 2 plasma. The process allows us to uniformly deposit Pd-Cu nanoparticles in porous powder, which is a mixture of γ-Al 2 O 3 (30 wt%), amorphous aluminum silicate (50 wt%) and molecular sieve (20 wt%) (ASM). With metal loadings of 13.1 and 2.5 mg g −1 for Pd and Cu, respectively, the afforded 13.1Pd-2.5Cu catalyst shows excellent catalytic performance for the hydrogenation of CO 2 in a dielectric barrier discharge reactor with no intentional heating. Under the condition of discharge input power of 24.6 W, H 2 -to-CO 2 ratio of 4 in feed gas, and gas hourly space velocity of 7595 h −1 , the conversion of CO 2 can reach as high as 38.0%, with the CH 4 and CH 3 OH product selectivities of 6.7% and 12.8%, respectively. Density functional theory calculations are further employed to understand the associated CH 3 OH formation mechanism.

原子层沉积(ALD)是一种新兴的薄膜沉积技术,其最主要的优势在于可在高深宽比的结构上沉积均匀致密的纳米薄膜,因此在微电子、纳米科技等领域中具有广泛的应用.纳米厚度的ALD薄膜与传统微米厚度的薄膜材料相比,需要更精确的表征手段,因此对ALD薄膜的表征方法展开了针对性探讨.阐述了ALD薄膜的常用物性表征方法,主要从薄膜厚度、成分、结晶性及形貌等方面展开探讨,同时展望了其未来发展的方向.

原子级的处理对应用于计算和数据存储的最先进的电子设备,以及与物联网、人工智能和量子计算相关的新兴技术正变得越来越重要.等离子体增强原子层沉积(PEALD)是一种原子级表面沉积技术,由于其较高的反应活性以及较低的沉积温度日益受到研究者的关注.本文介绍了PEALD技术的基本原理以及相对于其他薄膜沉积技术的优势,之后从前驱体和基底材料的影响等方面介绍了利用PEALD制备Ti、Co、Ni、Cu、Ru、Pd、Ag、Ta、Ir和Pt等过渡金属薄膜以及它们在微电子领域的应用现状,最后进行了总结和展望.

近年来,由于钴薄膜具有优良的物理化学性能如低电阻率、高磁各向异性、高催化活性等引起人们的广泛关注.在集成电路领域,基于钴优异的低电阻率特性,钴可以替代铜成为新一代半导体导线材料,在10 nm、7 nm,甚至在5 nm、3 nm芯片制造工艺下作为互连导线,可以提升导电性、降低功耗并大幅减小芯片体积,使芯片效能更高.目前已经有许多制备钴金属薄膜的研究,本文重点介绍利用化学气相沉积技术、热原子层沉积技术以及等离子体辅助原子层沉积技术制备钴薄膜的研究现状,讨论各种制备方法的优劣,对所使用的前驱体做了总结,并展望了发展趋势.

Iron carbide (Fe 1 − x C x ) thin fi lms were successfully grown by plasma-enhanced atomic layer deposition (PEALD) using bis( N , N 9 -di- tert -butylacetamidinato)iron(II) as a precursor and H 2 plasma as a reactant. Smooth and pure Fe 1 − x C x thin fi lms were obtained by the PEALD process in a layer-by-layer fi lm growth fashion, and the x in the nominal formula of Fe 1 − x C x is approximately 0.26. For the wide PEALD temperature window from 80 to 210 °C, a saturated fi lm growth rate of 0.04 nm/cycle was achieved. X-ray diffraction and transition electron microscope measurements show that the fi lms grown at deposition temperature 80 – 170 °C are amorphous; however, at 210 °C, the crystal structure of Fe 7 C 3 is formed. The conformality and resistivity of the deposited fi lms have also been studied. At last, the PEALD Fe 1 − x C x on carbon cloth shows excellent electrocatalytic performance for hydrogen evolution.

Iron carbide (Fe_1− x C_x) thin films were successfully grown by plasma-enhanced atomic layer deposition (PEALD) using bis( N, N ′-di- tert -butylacetamidinato)iron(II) as a precursor and H_2 plasma as a reactant. Smooth and pure Fe_1− x C_x thin films were obtained by the PEALD process in a layer-by-layer film growth fashion, and the x in the nominal formula of Fe_1− x C_x is approximately 0.26. For the wide PEALD temperature window from 80 to 210 °C, a saturated film growth rate of 0.04 nm/cycle was achieved. X-ray diffraction and transition electron microscope measurements show that the films grown at deposition temperature 80–170 °C are amorphous; however, at 210 °C, the crystal structure of Fe_7C_3 is formed. The conformality and resistivity of the deposited films have also been studied. At last, the PEALD Fe_1− x C_x on carbon cloth shows excellent electrocatalytic performance for hydrogen evolution.

A new pulsed chemical vapor deposition (PCVD) process has been developed to fabricate iron (Fe) and iron carbide (Fe1-xCx) thin films at low temperature range from 150 degrees C to 230 degrees C. The process employs bis(1,4-di-tert-butyl-1,3-diazabutadienyl)iron(II) as iron source and hydrogen gas or hydrogen plasma as the coreactant. The films deposited with hydrogen gas are demonstrated polycrystalline with body-centered cubic Fe. However, for the films deposited with hydrogen plasma, the amorphous phase of iron carbide is obtained. The influence of the deposition temperature on iron and iron carbide characteristics have been investigated.

报道了一种新型PE-ALD工艺用于沉积碳化钴薄膜.以脒基钴为前驱体,在氢等离子体作用下,成功制备了碳化钴薄膜.薄膜厚度与沉积循环关系显示薄膜生长为理想的逐层生长行为,100℃下薄膜生长速率为0.066 nm/cycle.利用XRD和TEM对所沉积的薄膜进行表征,结果表明薄膜是多晶的六方晶系Co3C晶体结构.XPS的结果表明沉积的碳化钴膜具有高纯度.在深宽比高达20:1的硅基底沟槽中研究碳化钴薄膜的保型性,显示该PE-ALD工艺可以沉积厚度均匀、光滑且高度保形的碳化钴薄膜,这有利于在高深宽比的3D结构中的涂覆并且在负载催化剂领域具有潜在应用.

微电子领域中的铜互连工艺需要沉积一层连续且保形好的铜籽晶层,随着集成电路中特征尺寸的减小及沟槽深宽比的增加,传统的热沉积工艺难以满足其将来的制作要求.本文介绍了使用新的强还原剂前驱体沉积铜金属工艺的研究进展,重点综述了利用氢气等离子体辅助原子层沉积铜薄膜工艺的研究现状,概述了应用各类铜前驱体进行铜薄膜沉积的参数及所制备铜薄膜的性能,总结了各工艺的优缺点.

知识地图是指人类的客观知识按其结构绘制成各个单元概念为节点的学科认识图。本文介绍了知识地图所描绘的对象以及知识地图的建构。