Triboelectric nanogenerator (TENG) is widely used in the fields of sustainable green energy harvesting, self-powered motion parameter and tactile sensing, However, it still fails to meet the requirements under various complex conditions, such as low temperatures, self healing after destruction, punching, long-term placement, soaking in acid or alkali solution, scorch, continuous work. Herein, based on metal coordination, Zr4+ ions are introduced to enhance the first network k-carrageenan (k-CG) for achieving double enhancement in mechanics and electricity of the gel electrode layer, poly (N-hydroxyl acrylamide)/k-CG (PKZ) double network organic conductive gel enhanced by multiple hydrogen bonds and metal coordination bond is designed, and the gel exhibits high tensile strength, high conductivity, fast self-recovery, excellent self-repairing and low-temperature resistance. Based on simple sandpaper templates with different mesh numbers Ecoflex film with rough surfaces is designed for efficient triboelectric contact interface, and TENG with PKZ double network organic conductive gel as electrode layer is constructed, and possesses excellent resistant to multiple complex conditions. With high short-circuit current, open-circuit voltage and output power, the TENG is capable of powering electronic devices, and it can also be sensitive and stable sensing in writing recognition, real-time monitoring of motion parameters involving acceleration, speed and distance. The TENG is stable and reliable for sustainable green energy harvesting, motion parameter and tactile sensing in multiple complex environments. Thus, we provide novel ideas for designing energy harvesting and sensing for future wearable electronics under multiple complex conditions.

近年来,在食品和药品包装、可穿戴有机电子封装、有机发光二极管(OLED)和量子点封装、真空绝缘板密封、生物医学和可再生能源防护等方面,以柔性塑料为基体的阻湿、阻氧、高透明的薄膜得到了广泛的应用,促进了阻隔膜制备技术的发展.等离子体技术在阻隔膜制备中显示出独特的优势,包括:可以大规模生产制备阻隔膜、薄膜性能优异、产品成本低廉等.这些等离子体技术包括等离子体增强物理气相沉积(PEPVD)、等离子体增强/辅助化学气相沉积(PECVD/PACVD)和等离子体增强/辅助原子层沉积(PEALD/PAALD)技术等.综述了基于等离子体技术制备阻隔膜的方法和理论,主要介绍等离子体源、等离子体作用方式、等离子体诊断和等离子体增强沉积阻隔膜的生长机制,以阐明等离子体参数和阻隔膜制备及性能之间的内在联系,为阻隔薄膜乃至类似柔性功能材料的制备和应用提出指导性建议.

Perfluorooctanoic acid (PFOA) is an artificially synthesized per-fluorinated chemical widely used in industry. It is often released into the environment without treatment and causes pollution in groundwater. In this paper, we employed a strip fountain dielectric barrier discharge (SF-DBD) plasma source to degrade PFOA from the water. The effects of power supply mode, discharge gases, pH, the conductivity of the solution, concentration, etc., on the degradation efficiency were studied. For a 200 mL sample of 75 mg/L PFOA, a 99% degradation efficiency with a 204.5 μg/kJ energy production rate was achieved using an average power of 43 W negative pulse argon plasma for 50 min at atmospheric pressure. The total organic carbon concentration (TOC) decreased by 63% after a 60 min treatment. The SF-DBD proves to be a promising and energy-saving technique to efficiently remove PFOA from water.

Recently, the search of effective moisture and gas barrier coatings based on flexible plastics has been extensively explored for various applications such as food packaging, encapsulation of organic electronics, organic light-emitting diodes (OLED) and quantum dots, sealing of vacuum insulation panels, biomedical applications, renewable organic energy, and protective coatings, and so on. Several approaches have been developed to prepare the barrier layers. The employment of plasma technology in barrier layer deposition demonstrates a unique characteristic and superior advantages, which are significantly favorable in scale, quality, and cost. The high-quality barrier layer with low permeation rate is even achieved by roll-to-roll processing, including plasma technologies ranging from plasma enhanced physical vapor deposition (PEPVD), plasma-assisted/-enhanced chemical vapor deposition (PECVD/PACVD), to plasma-assisted/enhanced atomic layer deposition (PEALD/PAALD). In this paper, the preparations of barrier layers based on plasma technology are summarized as follows: the plasma source, plasma working environment, and mechanism of plasma-enhanced coating growth in PVD, PECVD, or PEALD. The purpose is to clarify the relationship of plasma technology with the preparation methods, barrier properties, and application fields, and indicate the fabrication of barrier, or even superior barrier, films in future.

Ferroelectric materials are promising for solar energy conversion due to the unique spontaneous polarization effect, leading to effective control of electron-hole recombination and potentially high power conversion efficiency of perovskite solar cells. Herein, the ultrathin ferroelectric hafnia alumina (HfAlO) films were obtained by atomic layer deposition and applied to modify the electron transport layer of PSCs. The XPS and AFM characterizations indicate that the Hf0.39Al0.10O films feature smooth, dense, and compact surface morphology. For the devices incorporating the ultrathin HfAlO films, the oriented ferroelectric effect-induced spontaneous polarization and internal electric field are crucial factors to enhance the charge separation during charge transfer. Accordingly, the short circuit current, open-circuit voltage, and power conversion efficiency (PCE) are increased by 11.8%, 9.0%, and 29.8%, respectively. Moreover, the HfAlO incorporating devices retained ~ 80% of the original PCE after 500 h ageing, much better than that of the pristine devices showing the retention of only ~ 50% of the original PCE.

介绍了一种具有广泛应用前景的新型等离子体源—螺旋波等离子体源,其特点是结构简单,可以产生高密度的等离子体.论文首先简述了螺旋波等离子体产生基本原理,并对螺旋波等离子体源的结构、加热机制以及天线形式与其能量耦合方式进行了介绍.然后,概述了螺旋波等离子体源的特性和诊断方式,主要介绍迟滞能量分析仪(RFEA)对螺旋波等离子体中的离子能量分布(IED)诊断,并对影响IED的因素进行分析.随后介绍了螺旋波等离子体源在刻蚀、薄膜沉积以及电推进三个领域的应用进展.最后指出螺旋波等离子体源的未来发展以及存在的一些问题.

随着微电子技术、锂离子电池和太阳能电池等行业的发展,人们对聚合物薄膜,尤其是纳米级聚合物薄膜的要求也越来越高.在传统的沉积方法不能满足要求的条件下,找到新的沉积聚合物的方法势在必行.分子层沉积(MLD)是一种类似于原子层沉积的技术,它可以精确控制聚合物膜的厚度、组成、形貌和保形性.因此,MLD可以成为制备聚合物薄膜的一种新方法.本文综述了分子层沉积的原理和方法,以及在薄膜领域的发展和应用,最后给出了分子层沉积技术未来发展所面对的挑战和展望.

原子级的处理对应用于计算和数据存储的最先进的电子设备,以及与物联网、人工智能和量子计算相关的新兴技术正变得越来越重要.等离子体增强原子层沉积(PEALD)是一种原子级表面沉积技术,由于其较高的反应活性以及较低的沉积温度日益受到研究者的关注.本文介绍了PEALD技术的基本原理以及相对于其他薄膜沉积技术的优势,之后从前驱体和基底材料的影响等方面介绍了利用PEALD制备Ti、Co、Ni、Cu、Ru、Pd、Ag、Ta、Ir和Pt等过渡金属薄膜以及它们在微电子领域的应用现状,最后进行了总结和展望.

原子层沉积(atomic layer deposition,ALD)是基于自限制界面反应的薄膜生长技术.采用原子层技术可以制备结构致密、高保形、低缺陷密度、性能优异、均匀性好的薄膜.氧化铝是原子层沉积最常见的薄膜(ALD-Al2O3),具有高透明度、高禁带宽度、高介电常数、高阻隔性以及良好的化学和热稳定性,因而作为钝化层、气体渗透阻隔层和栅极介电层等广泛应用于太阳能电池钝化、OLED封装、有机太阳能电池介质层、印刷电子和微电子封装等领域.本文综述了ALD-Al2O3原理、在线诊断和应用发展现状,主要包括氧化铝薄膜的生长机理、单体选择、沉积方法、原位诊断,同时对ALD-Al2O3应用以及未来的发展趋势进行预测.

In this study, the influence of substrate temperature on properties of Al-N co-doped p-type ZnO films is explored. Benefitting from the high ionization rate in high-power impulsed magnetron sputtering, the concentration of ionized nitrogen N+ and ionized zinc Zn+ were increased, which promoted the formation of ZnO films and lowered the necessary substrate temperature. After optimization, a co-doped p-type ZnO thin film with a resistivity lower than 0.35 Ω cm and a hole concentration higher than 5.34 × 1018 cm−3 is grown at 280 °C. X-ray diffraction results confirm that Al-N co-doping does not destruct the ZnO wurtzite structure. X-ray photoelectron spectroscopy demonstrates that the presence of Al promotes the formation of acceptor (No) defects in ZnO films, and ensures the role of Al in stabilizing p-type ZnO.

Printing engineering is an undergraduate major of light industry category, which belongs to the niche majors. The printing engineering major of Beijing Institute of Graphic Communication is a national first-class undergraduate major under the "Double Ten-Thousand Plan" of the Ministry of education and the "key construction first-class major" in Beijing universities. In order to promote the construction of first-class major and improve the quality of personnel training, the reform measures from the aspects of professional orientation and characteristics, comprehensive reform of major, construction of curriculum team and teaching staff, teaching quality monitoring and guarantee, and tracking and evaluation of graduate training quality, which were mainly put forward in this paper, and it lists the work results. It also looks forward to the ideas of the next professional construction, and puts forward the requirements.

In this paper, we report a nitrogen (N) doped zinc oxide (N:ZnO) film grown by the reactive high power impulse magnetron sputtering (HiPIMS) technique on glass substrates, where nitrogen gas (N2) is used as the N source. The proposal is to investigate the influence of process parameters on the alteration of the N:ZnO film from n- to p-type conductivity and the stability of the p-type behavior. It is obtained that the n- or p-type behavior of the as-deposited N:ZnO film is affected by the N2 flow rate, deposition temperature, and inductively coupled plasma (ICP) assistance, of which the ICP assistance had a great impact. It is noticed that, owing to the improved ionization rate of the N2 dopant by ICP, the N:ZnO film almost totally prefers to exhibit p-type behavior. Based on the measurement by temporal resolution optical emission spectroscopy, the components in plasma are obtained and the ion reaction in film growth is confirmed: a high concentration of active N+ in the ICP-assisted plasma reacts with sputtered Zn+ in vapor to form No defect in the p-type N:ZnO film. We then forecast that a stable p-type N:ZnO film can be grown using the HiPIMS technique.

Iron carbide (Fe 1 − x C x ) thin fi lms were successfully grown by plasma-enhanced atomic layer deposition (PEALD) using bis( N , N 9 -di- tert -butylacetamidinato)iron(II) as a precursor and H 2 plasma as a reactant. Smooth and pure Fe 1 − x C x thin fi lms were obtained by the PEALD process in a layer-by-layer fi lm growth fashion, and the x in the nominal formula of Fe 1 − x C x is approximately 0.26. For the wide PEALD temperature window from 80 to 210 °C, a saturated fi lm growth rate of 0.04 nm/cycle was achieved. X-ray diffraction and transition electron microscope measurements show that the fi lms grown at deposition temperature 80 – 170 °C are amorphous; however, at 210 °C, the crystal structure of Fe 7 C 3 is formed. The conformality and resistivity of the deposited fi lms have also been studied. At last, the PEALD Fe 1 − x C x on carbon cloth shows excellent electrocatalytic performance for hydrogen evolution.

Iron carbide (Fe_1− x C_x) thin films were successfully grown by plasma-enhanced atomic layer deposition (PEALD) using bis( N, N ′-di- tert -butylacetamidinato)iron(II) as a precursor and H_2 plasma as a reactant. Smooth and pure Fe_1− x C_x thin films were obtained by the PEALD process in a layer-by-layer film growth fashion, and the x in the nominal formula of Fe_1− x C_x is approximately 0.26. For the wide PEALD temperature window from 80 to 210 °C, a saturated film growth rate of 0.04 nm/cycle was achieved. X-ray diffraction and transition electron microscope measurements show that the films grown at deposition temperature 80–170 °C are amorphous; however, at 210 °C, the crystal structure of Fe_7C_3 is formed. The conformality and resistivity of the deposited films have also been studied. At last, the PEALD Fe_1− x C_x on carbon cloth shows excellent electrocatalytic performance for hydrogen evolution.

In this paper, we investigate the properties of chromium nitride (CrN) coating prepared using a high power magnetron sputtering (HiPIMS) technique. As a comparison, CrN coating prepared using a direct current magnetron sputtering (DCMS) technique is also studied. The crystal structure, surface and cross-sectional morphologies, and composite properties of the as-deposited CrN coatings are compared by x-ray diffraction, a scanning electron microscope, and a microhardness tester, respectively. It is found that the as-deposited CrN film by HiPIMS grew preferentially on (200) facet when compared with that by DCMS on (111) facet. As a result, the coatings deposited by HiPIMS have a very compact microstructure with high hardness: the microhardness reached 855.9 Hv replacing 501.5 Hv by DCMS. Besides, the inner-stress of CrN films prepared by HiPIMS is also relatively small. After measuring the corrosion resistance, the corrosion current of films prepared by HiPIMS was an order of magnitude smaller than that of CrN films deposited by DCMS. Based on the plasma diagnostics by time resolved optical emission spectroscopy, it is believed that the superior quality of CrN coatings prepared by HiPIMS is because of the ionic reaction between Cr+ and N+, rather than the neutral Cr and N reaction in DCMS during the CrN film growth.

Large area uniform plasma sources,such as high-density magnetized inductively coupled plasma (ICP) and helicon plasma,have broad applications in industry.A comprehensive comparison of ICP and helicon plasma,excited by a single-loop antenna,is presented in this paper from the perspectives of mode transition,hysteresis behavior,and density distribution.The E-H mode transition in ICP and the E-H-W mode transition in helicon plasma are clearly observed in the experiments.Besides,the considerable variation of hysteresis behavior from inverse hysteresis to normal hysteresis by the influence of the magnetic field is explored.The bi-Maxwellian and Maxwellian electron energy distribution functions in each discharge are used to explain this phenomenon,which is essentially related to the transition from a nonlocal kinetic property to a local kinetic property of electrons.In addition,we notice that the plasma density,in the radial direction,is peaked in the center of the tube in ICP,but a complicated distribution is formed in helicon plasma.In the axial direction,the maximum plasma density is still in the center of the antenna in ICP,whereas the highest plasma density is located downstream,far away from the antenna,in helicon plasma.It is believed that the reflected electrons in the sheath and pre-sheath by the upper metallic endplate and downstream propagated helicon wave will be responsible for this plasma density profile in helicon plasma.Due to the constrained electron motion in the magnetic field,an extremely uniform density distribution will be obtained with an appropriate axial magnetic field in the wave discharge mode.

Atomic layer deposition (ALD) of cobalt carbide thin films is reported by using bis(N,N'-diisopropyl-acetamidinato)cobalt(II) (Co(amd)(2)) and H-2 plasma. The process shows a good self-limiting ALD film growth behavior for a fairly wide temperature range from 70 to 160 degrees C, and the growth rate is 0.066 nm/cycle for the deposition within the temperature range. The deposited cobalt carbide thin films are generally smooth and pure, and the film composition is approximately Co3C0.7 for the deposition at 80-200 degrees C. Notably, all the carbon in the as-deposited films forms cobalt carbide, and no carbon-carbon bonds are detected by X-ray photoelectron spectroscopy. Raman spectroscopy also confirms the absence of graphite or amorphous carbon in the as deposited films. The films are nano-polycrystalline as deposited, and the crystal structure is the hexagonal Co3C structure. The films can decompose into hcp-Co metal and amorphous carbon upon the thermal annealing in N-2 at 400 degrees C. The resistivity and magnetization of the as -deposited films are also characterized. It is further shown that by use of this plasma-assisted ALD process highly conformal cobalt carbide films can be deposited into the trench structures with a high aspect ratio of 20:1. In the last, the ALD growth chemistry is studied by using the in situ quartz crystal microbalance (QCM) technique, and the QCM results suggest that the structure of the amidinate ligand in the Co(amd)(2) precursor largely falls apart upon its reaction with the surface during the ALD.

目的 比较直流磁控溅射(DCMS)和高功率磁控溅射(HiPIMS)两种沉积技术制备的氮化铬(CrN)薄膜的结构和性能.方法 采用DCMS和HiPIMS沉积技术,在金属镍(Ni)基底上沉积CrN薄膜,采用X射线衍射(XRD)、扫描电镜(SEM)和显微硬度计等仪器,分析CrN薄膜的晶相结构、表面以及截面形貌、基底与薄膜复合硬度、摩擦性能等.结果 XRD晶体测量显示DCMS制备的CrN薄膜在(111)晶面择优生长,内应力大;而HiPIMS制备的CrN薄膜为(200)晶面择优生长,内应力小.SEM显示两种方法制备的CrN薄膜都呈柱状晶体结构生长,但HiPIMS沉积的CrN薄膜颗粒尺寸较小,柱状晶体结构和晶粒更致密.硬度测量得到HiPIMS制备的CrN薄膜显微硬度为855.9HV,而DCMS制备的CrN薄膜显微硬度为501.5HV.此外,DCMS制备的CrN薄膜平均摩擦系数为0.640,而HiPIMS制备的CrN薄膜摩擦系数为0.545,耐磨性也好.HiPIMS制备的CrN薄膜的腐蚀电流比DCMS制备的CrN薄膜低1个数量级.结论 HiPIMS沉积技术制备的CrN薄膜颗粒尺寸小,结构更致密,且缺陷少、硬度高、防腐蚀性好,薄膜各项指标都优于DCMS沉积的CrN薄膜.

Al-N co-doped ZnO thin films were grown on glass substrate by high power reactive magnetron sputtering（HiPIMS）. We focus on the effects of nitrogen flow rate on the structure,morphology,and electrical properties of Al-N codoped ZnO thin films. The results show that the nitrogen flow rate plays an important role on the n-p type transformation and electrical properties of the conductivity type of Al-N co-doped ZnO thin films. When N2= 8 mL/min,the co-doped film is n-type. As the nitrogen fluxes was increasing,the carrier concentration was increased,and the film switched from ntype to p-type and then to n-type. In addition,the transmittance of Al-N co-doped ZnO film was as high as 85% in the visible light region. As 20 mL/min N2 was introduced,the Al-N co-doped ZnO film exhibits a good p-type conductivity with the resistivity of 4.51 Ω cm,a carrier concentration of 5.47×1017 cm-3 and a Hall Mobility of 2.7 cm2/Vs.

Cobalt nitride (Co3Nx) thin films were deposited via the technique of plasma enhanced atomic layer deposition (ALD) at low temperatures down to 100 °C, using bis(N,N′-di-iso-propylacetamidinato)cobalt(II) [Co(ipr2AMD)2] and NH3 plasma. Saturation curves demonstrate that the deposition processes follow the ideal self-limiting ALD fashion with a growth rate of 0.075 nm/cycle. The x in the nominal formula of Co3Nx is approximately 0.78, and the films are demonstrated polycrystalline with a hexagonal Co3N crystal structure. This process can deposit a pure, smooth, and highly conformal Co3Nx film in trenches with 20:1 aspect ratio, which can be extended to the deposition of other metal nitrides at low temperature.