On the occasion of the 50th anniversary of the founding of Acupuncture Research， this paper systematically reviews the milestone value of the journal in promoting the scientification， standardization， and internationalization of acupuncture-moxibustion medicine. Integrating the core research achievements of the authors’ team over the past sixty-odd years—particularly the classic literature published in Acupuncture Research over the last half-century—this article deeply analyzes the development characteristics of modern acupuncture research in its transition from “empirical verification” to “mechanism-driven” science. Furthermore， it elucidates four core pathways for the high-quality development of the acupuncture research field： first， emphasizing the neurochemical principles of acupuncture analgesia to drive theoretical and technological innovation through heritage preservation； second， harnessing translational medicine as a developmental catalyst to integrate basic medicine and clinical medicine； third， spearheading the evolution of the “Clinical+X” paradigm via brain-computer interfaces； and fourth， prioritizing the standardization and internationalization of acupuncture research， while strengthening the building of multidisciplinary talent teams to enhance China’s voice and leadership in the field of global acupuncture governance. Ultimately， this work provides a robust theoretical foundation and forward-looking horizons for constructing a modern acupuncture medical system with Chinese characteristics and advancing the cause of global health.

High-temperature reverse bias (HTRB) is one of the most critical reliability for SiC MOSFET, and the termination region is widely regarded as the sensitive area under HTRB stress. Interestingly, through systematically monitoring of the degradation behavior of static electrical parameters under different voltage, this study reveals that the elevated reverse bias (ERB) stress can also induce damage in the gate oxide, which results in the hole trapping and a negative shift of the threshold voltage. Deep level transient spectroscopy (DLTS) measurements were performed and showed that the interface trap density in the gate oxide is promoted after ERB stress. Surprisingly, the reverse leakage current after ERB stress is significantly deteriorated at a gate bias of 0 V, while effectively suppressed by applying a negative gate bias (-5 V), which point to the synergistic effects of channel region on the breakdown voltage. Based on the gate oxide degradations and TCAD simulations, it is elucidated that the trapped positive interface charges in gate oxide cause band bending, leading to the formation of an electron accumulation layer in the channel region at 0 V gate bias and thus resulting in a dominant leakage path. This work reveals the impact and mechanism of the ERB stress induced gate oxide damage on the breakdown voltage and highlights the importance of gate oxide protection, which is of great significance for improving the reliability of SiC MOSFETs in elevated voltage applications.

Small-angle etching of SiC is widely applied in the fabrication of advanced power and optoelectronic devices. Therefore, this paper presents a method for forming small-angle trenches with high surface quality on 4H-SiC by inductively coupled plasma (ICP) etching. By combining optical emission spectroscopy (OES) technique, the effects of ICP power, RF power and the O2 ratio in the SF6/O2 gas mixture on the SiC etch angle and surface roughness were investigated. Our results suggest that the O2 ratio plays the dominant role among the three factors. Based on the analysis of characteristic peaks in OES, a model parameter K was established for the first time which exhibits a strong nonlinear exponential correlation with the SiC etch angle. This enables in-situ estimation of the etch angle without requiring additional complex measurements. Finally, the SiC avalanche photodiode (APD) was fabricated under the optimal etching condition. The device achieves a dark current on the order of pA and a maximum gain exceeding 106. This study provides key insights for the development and fabrication of small-angle beveled SiC devices with simplified processes.

the skin is the largest organ of the human body. Biological signals from the epidermis, dermis, and hypodermis layers including sweat, body temperature, blood pressure, and blood oxygen, etc. can be collected for biosensing to provide massive information about human health status. Thus, to be skin-compatible is one of the essential requirements for biosensors. When considering the wearable or implantable application of skin-compatible electronics, biosensors must demonstrate specific properties such as flexibility, stretchability, biocompatibility, stability, and conductivity. Block copolymers are promising for skin-compatible electronics as the properties of the material can be adjusted with soft characteristics, good carrier transportation, and other features through the design of the polymer chain. Up to now, some block copolymers have been widely used in skin electronics, such as polystyrene-b-poly(ethylene butylene)-b-polystyrene and copolymers containing poly(3-hexylthiophene) blocks. Therefore, this chapter elaborates the design and fabrication of copolymer toward its application in skin-compatible electronics.

The surge current capability is one of the key parameters for the application of silicon carbide (SiC) Schottky barrier diode (SBD) in power converters. In this study, the surge current failure mechanism of a 650 V 4H-SiC SBD during non-repetitive surge current test is investigated. The $\textit{I}-\textit{V}$ measurements and microscopic observations before and after surge current failure demonstrate there are two types of failure mechanisms. Experimental and electro-thermal simulation results are combined to prove that the two different failure mechanisms originate from the varied thermal strain within the chip. This article presents the cause of surge current failure of SiC SBD and establishes a surge current failure model, which is applicable to predict and optimize the surge current capability of SiC SBD.

This article proposes a termination design for 4H-SiC Schottky Barrier Diodes (SBDs) that integrates uniformly distributed multiple P-type micro-island with multi-step. This design eliminates the need for high-energy ion implantation, reducing process costs. By optimizing the length $(\mathrm{L}_{\mathrm{P}})$, spacing $(\mathrm{S}_{\mathrm{P}})$, and number $(\mathrm{N}_{\mathrm{P}})$ of the micro-island, along with the step lengths $(\mathrm{L}_{\text{step}})$ and numbers $(\mathrm{n}_{\text{step}})$ in the end relaxation region, the device reverse performance can be effectively improved. The study demonstrates that with an $\mathrm{L}_{\mathrm{P}} =12$ μm, $\mathrm{S}_{\mathrm{P}} =3$ μm, $\mathrm{N}_{P}=5, \mathrm{L}_{\text{step}}=8\mu \mathrm{m}$, and $\mathrm{n}_{\text{step}}=3$ the electric field distribution is more uniform under a reverse voltage of 1200 V, achieving a terminal efficiency exceeding 90%. Furthermore, this configuration reduces the terminal area by over 16% compared to a structure comprising solely uniformly distributed P -type micro-islands.

- The letter investigated the design of junction termination extension structures with uniformly and non-uniformly distributed multiple P-type SiC micro-islands in 4H-SiC based Schottky Barrier Diode (SBD). By adjusting the length (LP), spacing (SP), number of islands (NP), and trapezoidal tilt angle (theta) of the micro-islands, the reverse performance of the devices is effectively optimized. Merging simulation with experimental methodologies, the performance of the SBD devices with varying terminal structures was analyzed. Simulation results indicate that a uniform distribution of multiple P-type micro-islands, particularly with LP = 13 mu m, SP = 3 mu m, and NP = 6, exhibits a more uniform electric field distribution under reverse voltage of 1200 V and a higher terminal efficiency (exceeding 90%), while also saving more than 19% of the terminal area if compared to the non-uniform multiple P-island configurations. Furthermore, by changing the theta, the reverse performance of SBD devices and terminal efficiency can be affected with theta = 12 degrees , producing the best outcome.

This paper presents a structure for designing Junction Termination Extension (JTE) in Silicon Carbide (SiC) power devices, particularly for Schottky Barrier Diodes (SBD). The P-type island composite multi-step JTE configuration has been developed by optimizing the number, length, and thickness of JTE steps. The JTE with step number of 4 and step length of 8 μm (SBD-n4L8) achieved a breakdown voltage of 1626 V at the same drift layer thickness of 10 μm, outperforming other step-based JTE structures. At reverse voltage of 1200 V, the SBD-n4L8 demonstrates a decrease in reverse leakage current with a uniform step-like current distribution profile. Subsequent analysis of the underlying mechanisms showed that, with step thickness of 2 μm, the SBD-n5L8 located at the corner and edge of the terminal region significantly reduced the peak electric field by more than 12.6 %.

Background Autism spectrum disorder (ASD) is associated with altered brain development, but it is unclear which specific structural changes may serve as potential diagnostic markers, particularly in young children at the age when symptoms become fully established. Furthermore, such brain markers need to meet the requirements of precision medicine and be accurate in aiding diagnosis at an individual rather than only a group level. Objective This study aimed to identify and model brain-wide differences in structural connectivity using diffusion tensor imaging (DTI) in young ASD and typically developing (TD) children. Methods A discovery cohort including 93 ASD and 26 TD children and two independent validation cohorts including 12 ASD and 9 TD children from three different cities in China were included. Brain-wide (294 regions) structural connectivity was measured using DTI (fractional anisotropy, FA) together with symptom severity and cognitive development. A connection matrix was constructed for each child for comparisons between ASD and TD groups. Pattern classification was performed on the discovery dataset and the resulting model was tested on the two independent validation datasets. Results Thirty-three structural connections showed increased FA in ASD compared to TD children and associated with both autistic symptom severity and impaired general cognitive development. The majority (29/33) involved the frontal lobe and comprised five different networks with functional relevance to default mode, motor control, social recognition, language and reward. Overall, classification achieved very high accuracy of 96.77% in the discovery dataset, and 91.67% and 88.89% in the two independent validation datasets. Conclusions Identified structural connectivity differences primarily involving the frontal cortex can very accurately distinguish novel individual ASD from TD children and may therefore represent a robust early brain biomarker which can address the requirements of precision medicine.

In recent years, because of stringent needs in the fabrication of silicon carbide (SiC) power devices, laser annealing has been introduced to achieve local ohmic contact. In this paper, the laser annealing research for the ohmic contact process of SiC power devices is reviewed, which is mainly divided into four aspects: laser process mechanism, ohmic contact electrode materials, and substrate materials. The effect of laser parameters on ohmic contact and the annealing process on SiC diode devices is also reviewed. Progress of other substrate materials, namely 6H-SiC and semi-insulating 4H-SiC-based devices with laser annealed ohmic contacts, is also briefly discussed, in which formation of semi-insulating SiC ohmic contacts is derived from laser irradiation at the interface to produce 3C-SiC. Some experiment results have been shown in the passage, such as XRD, SEM, TEM, etc. In the review, it points out that the direction of application and development of the laser annealing process for improving the ohmic contact of SiC power devices is highly encouraging.

刚刚过去的2021年,对疼痛医学工作者来说可以认为是一个嘉年华之年.诺贝尔奖授予疼痛有关受体(离子通道)的发现者,针刺镇痛原理研究的复兴,针刺治疗疼痛疾病大型临床试验疗效的确认,这几项都是国内外学术成果的佼佼者. 一、诺奖的激励 2021年10月4日,诺贝尔生理学或医学奖授予研究痛觉问题的两位美国神经科学家大卫·朱利叶斯(David Julius) 和阿登·帕塔普蒂安(Ardem Pa-tapoutian),奖励其在阐明疼痛感受器方面做出的重要贡献 [1,2].

In the Sui Dynasty (581–618) of China, Chao’s “On the Etiology of Diseases” described the “hun se” (muddleheaded) and “yu chi” (language delay) phenotypes, which are clinically manifested as a lack of speech and neurodevelopmental retardation in children (Figure 1). Since the first report of early infantile autism by Kanner in 1943 [1], the diagnosis of autism has undergone several revisions, and this broader group of disorders was renamed autism spectrum disorder (ASD) in the fifth edition of the Diagnostic and Statistical Manual of Mental Disorders (DSM) in 2013 [2]. The phenotypes of ASD extend beyond the classic form of autism described by Dr. Leo Kanner, as evidenced by the observation that an increasing number of peoplewith some autistic traits, including social and communication deficits and stereotyped repetitive behaviors, have normal intelligence. In recent years, the prevalence of ASD has reached 1 in 44 8-year-old children in the United States [3] and 1 in 143 6–12-year-old children in China [4]. As rapid advances in genetic research and neuroscience have clarified this disorder more than 200 highly plausible ASD-risk genes or copy number variants and environmental risk factors have been identified. These complex etiologies cause structural and functional brainwide alterations, resulting in abnormal cortical development, synaptic dysfunction, circuit-level brain dysfunction, and neuroinflammation, which can, in turn, lead to behavioral phenotypes in ASD. However, there is currently no true medication available for effectively treating ASD, and early behavior modification has long been regarded as the only effective treatment technique. There is still a long way to go in terms of new drug development, with aripiprazole and risperidone being the only FDA-approved medications for treating severe symptoms of ASD. Several other new drugs have failed in phase two or three clinical trials.

This case–control study explored the associations between autism spectrum disorder (ASD) and the serum concentration of nine chemical elements in children. The study recruited 92 Chinese children with ASD and 103 typically developing individuals. Serum concentrations of nine chemical elements (calcium, iodine, iron, lithium, magnesium, potassium, selenium, strontium, and zinc) were determined by inductively coupled plasma mass spectrometry (ICP-MS) and inductively coupled plasma atomic emission spectrometry (ICP-AES). An unconditional logistic regression model was used to analyze the associations between the serum concentrations of the elements and the risk of ASD. After adjusting for confounders, the multivariate analysis results showed that zinc ≤ 837.70 ng/mL, potassium > 170.06 μg/mL, and strontium ≤ 52.46 ng/mL were associated with an increased risk of ASD, while selenium > 159.80 ng/mL was associated with a decreased risk of ASD. Furthermore, the degree of lithium and zinc deficiency was associated with ASD severity. The results indicated that metallomic profiles of some specific elements might play important roles in the development of ASD, a finding of scientific significance for understanding the etiology, and providing dietary guidance for certain ASD types.

Spinal cord stimulation (SCS)-induced analgesia was characterized, and its underlying mechanisms were examined in a spared nerve injury model of neuropathic pain in rats. The analgesic effect of SCS with moderate mechanical hypersensitivity was increased with increasing stimulation intensity between the 20% and 80% motor thresholds. Various frequencies (2, 15, 50, 100, 10000 Hz, and 2/100 Hz dense-dispersed) of SCS were similarly effective. SCS-induced analgesia was maintained without tolerance within 24 h of continuous stimulation. SCS at 2 Hz significantly increased methionine enkephalin content in the cerebrospinal fluid. The analgesic effect of 2 Hz was abolished by μ or κ opioid receptor antagonist. The effect of 100 Hz was prevented by a κ antagonist, and that of 10 kHz was blocked by any of the μ, δ, or κ receptor antagonists, suggesting that the analgesic effect of SCS at different frequencies is mediated by different endorphins and opioid receptors.

Decreased attention to social information is considered an early emerging symptom of autism spectrum disorder (ASD), although the underlying causes remain controversial. Here we explored the impact of nonsocial object salience on reduced attention to social stimuli in male ASD compared with typically developing (TD) children. Correlations with blood concentrations of neuropeptides linked with social cognition were also investigated. Eye-tracking was performed in 102 preschool-aged boys (50 ASD, 52 TD) using a paradigm with social (faces) versus nonsocial (objects) stimuli presented in pairs in two conditions where nonsocial stimulus salience was varied. Basal oxytocin (OXT) and vasopressin concentrations were measured in blood. Compared with TD boys those with ASD viewed social stimuli less only when they were paired with low-salience nonsocial objects. Additionally, boys with ASD spent less time than TD ones viewing facial features, particularly the eyes. In TD boys, OXT concentrations and cognitive development scores were positively associated with time spent viewing the eye region, whereas for boys with ASD associations with time spent viewing faces were negative. Reduced gaze toward social stimuli in ASD relative to TD individuals may therefore be influenced by how salient the paired nonsocial objects are for the latter. On the other hand, reduced interest in the eyes of faces in boys with ASD is not influenced by how salient competing nonsocial stimuli are. Basal OXT concentrations and cognitive development scores are predictive of time spent viewing social stimuli in TD boys (eyes) and those with ASD (faces) but in the opposite direction. LAY SUMMARY: Children with autism exhibit reduced attention to social paired with nonsocial stimuli compared to typically developing children. Using eye-tracking we show this difference is due to typically developing rather than autistic boys being more influenced by how interesting competing nonsocial objects are. On the other hand, reduced time looking at the eyes in autistic relative to typically developing boys is unaffected by nonsocial object salience. Time spent viewing social stimuli is associated with cognitive development and blood levels of oxytocin.

本文是根据《生理科学进展》2022年第2期张崇本"拯救生命的伟大发现"一文改编而来.目的在于揭示一项重大的医学发现来之不易,但又不是高不可攀.数百年来数十位智者尽心竭力,集腋成裘,方成大业.

新中国胸外科事业的开拓者和奠基人辛育龄教授,战争时期曾与白求恩并肩战斗,和平时代在胸外科等多个领域取得从0到1的突破. 1965年,在西安、上海等地尝试用针刺代替麻醉药进行外科手术,称其谓"针刺麻醉".初期只用于扁桃腺摘除等小手术,进而用于甲状腺摘除,甚至像肺叶切除这样的大手术也取得成功.辛育龄教授就是针刺麻醉下完成肺叶切除手术的首创者之一.

Essential metal elements (EMEs) have essential roles in neurological development and maintenance of human homeostasis. We performed a case-control study to explore association between the risk of autism spectrum disorder (ASD) and the 11 EMEs [Calcium (Ca), potassium (K), magnesium (Mg), sodium (Na), manganese (Mn), selenium (Se), cobalt (Co), Molybdenum (Mo), copper (Cu), zinc (Zn), and iron (Fe)] in serum. Ninety-two autistic subjects (cases) and age-sex-matched healthy subjects (controls = 91) from Beijing, China were recruited. In addition, totally 109 mothers of recruited children participated in this study. ICP-AES and ICP-MS were applied to determine the concentration of 11 EMEs in serum. The concentrations of Ca, K, and Mg were significantly higher in the cases than in the controls (OR [95% CI]: 1.031 [1.006–1.058] for Ca; 1.081 [1.046–1.118] for K; 1.161 [1.012–1.331] for Mg), while the concentrations of Zn and Cu were significantly lower (0.997 [0.995–0.999] for Cu; 0.996 [0.992–1.000] for Zn). Clear dose-response relationships between EMEs concentrations and the risk of ASD, as well as the correlation between EME concentrations and the severity of ASD were observed for most of the above EMEs. Six and seven specific correlated pairs between mothers and children were found in the cases and controls separately. The overall profiles of the EMEs were changed in the cases as compared to the controls. This study suggested that the higher levels of Ca, K, and Mg and lower levels of Zn and Cu may be associated with an elevated risk of ASD.

Abstract Objective To examine the effects and mechanisms of transcutaneous electrical acupoint stimulation (TEAS) on pregnancy outcomes in women undergoing in vitro fertilization (IVF)-embryo transfer (ET). Design, setting, and participants This efficacy study was a multicenter, randomized, controlled clinical trial (RCT) in women receiving IVF-ET. The mechanistic study was a single-center RCT. Interventions The participants received TEAS vs. no TEAS treatment. Main outcome measures In the efficacy study, the primary outcomes were the rates of clinical pregnancy, embryo implantation, and live birth. In the mechanistic study, sex hormones and endometrial protein expression were examined. Results Ultimately, 739 participants were enrolled (367 and 372 in the TEAS and control groups, respectively). The clinical pregnancy rate was higher in the TEAS group than in the controls (55.1% vs. 46.7%, P = 0.03). There were no significant differences in embryo implantation, biochemical pregnancy, and live birth rates between the two groups (all P > 0.05) in the study population. In women > 35 years, the clinical pregnancy rates, embryo implantation rates and live birth rates in the TEAS and control groups were 48.9% vs. 23.7% (P = 0.004),30.8 vs. 13.9% (P = 0.001) and 34.0% vs. 19.7% (P = 0.06) respectively. In the mechanistic study with 120 participants, on the theoretical embryo implantation day, better developed endometrial pinopodes, elevated endometrial integrin α1β1/αVβ3, leukemia inhibitory factor, and elevated serum progesterone levels were found in the TEAS group compared with controls. Conclusion TEAS significantly improved the clinical pregnancy rate in women undergoing IVF-ET, especially in women of older age. It might be due to improved endometrial receptivity. Trial registration ChiCTR-TRC-13003950.