With the rapid advancement of multi-dimensional detection, there is an urgent demand for next-generation polarization detectors capable of achieving high responsivity, fast speed, and strong polarization sensitivity, metrics that are typically limited by fundamental trade-offs. Two-dimensional (2D) materials offer a promising platform, yet their weak intrinsic anisotropy constrains polarization ratio (PR) and overall device performance. Here, we report a mid-infrared (MIR) polarization photovoltage field-effect transistor (PPFET) based on black phosphorus/molybdenum disulfide (BP/MoS2) heterostructures that combines polarization detection and amplification within a single architecture. By exploiting gate-tunable transconductance in the linear amplification region, the device achieves a PR up to 510 via a "stretching" mechanism, while maintaining a polarization angle sensitivity (PAS) up to ~46.57 mA/(W·degree) and response times down to ~0.8 μs under 3.5 μm illumination. This combination of high polarization sensitivity, responsivity, and speed establishes PPFETs as a powerful platform for high-performance MIR polarization detection and paves the way for compact, high-precision imaging systems.

Infected bone defects remain a critical clinical challenge due to the coexistence of persistent bacterial infection, excessive inflammation, and impaired bone regeneration. The development of nanoparticle-based phototherapy capable of simultaneously addressing these issues is therefore of great significance. Here, selenium-tellurium (SeTe) nanoparticles via a novel sputtering and exfoliation process were developed. These agents showed strong short-wave infrared (SWIR) photothermal/photoelectric responses, alongside excellent physicochemical stability and biocompatibility, making them promising active phototherapeutic candidates. SeTe inhibited bacterial growth and biofilms under SWIR while reducing reactive oxygen species and suppressing inflammation-related cytokines. Notably, SeTe upregulated selenoproteins like GPX4 and GPX1, enhancing antioxidant capacity and redox balance. SeTe also promoted osteogenic differentiation via increased alkaline phosphatase activity, mineralization, and osteogenic gene/protein expression. In vivo, SeTe combined with SWIR significantly improved infected bone defect repair—reducing bacteria, boosting new bone formation, and restoring bone microarchitecture. Histology and immunohistochemistry showed reduced inflammation, along with elevated osteogenic and antioxidant markers. This multifunctional SeTe-based system integrates antibacterial, anti-inflammatory, and osteogenic properties, offering a promising approach for treating infected bone defects and advancing biomaterial design for complex tissue regeneration.

The multi-channel optical field manipulation capability of metasurfaces gives them great potential for application in system miniaturization and integrated optics. Recently, various methods have been proposed to increase the number of controllable circularly polarized (CP) functional channels to enhance the multifunctional integration capability of metasurfaces. However, these methods often suffer from non-uniform amplitude responses, incomplete decoupling, and excessive operational complexity. Herein, a strategy for achieving fully decoupled four-channel phase modulation by stacking half-wave plate meta-molecules and chiral meta-molecules is proposed. This strategy directly establishes an explicit functional relationship between the structural phase shifts, rotation angles, and the phases of the four CP channels. Based on this strategy, we designed two chiral free-standing bilayer metasurfaces that can, respectively, achieve vortex light generation and holographic imaging within the four CP channels. The mode purity values of the generated vortex beams exceed 85%, and the crosstalk between the four-channel holographic images is negligible. To demonstrate the application potential of this multi-channel phase modulation strategy, the holographic encryption of target images within twelve angular momentum channels was also performed. The proposed strategy for complete phase decoupling holds broad application prospects in high-capacity optical information encryption and multi-channel vortex beam generation.

Ultra-compact on-chip polarization photodetectors offer unique device concepts, yet mainstream polarization ratio optimization strategies have typically compromised responsivity. This work demonstrates an optimization of polarization-response characteristics in anisotropic van der Waals heterostructures (MoTe2/Ta2NiSe5) through gate-tunable band alignment engineering. Reveal a correlation between the on-off state and the polarization-responsivity relationship in photodetectors, which may enable high-contrast polarization imaging and improved angular discrimination without the need for external polarizers or complex pixelated architectures. Capitalizing on its simple structure, robust tunability, and pronounced PR-PAS relationship, this work demonstrates an electrically tunable polarization-sensitive photodetection behavior, showing promising potential for polarization imaging, optical communication, and polarization-state monitoring.

ABSTRACT High‐performance short‐wave infrared (SWIR) photodetectors typically rely on single‐crystalline germanium and III–V semiconductors. However, their high material costs and complex fabrication requirements hinder large‐area integration and cost‐effective SWIR technologies. Here, we report a scalable vertical heterojunction employing magnetron‐sputtered Se 0.2 Te 0.8 thin films with good large‐area uniformity. By exploiting the intrinsic SWIR bandgap absorption of Se 0.2 Te 0.8 together with the built‐in electric field of the vertical heterojunction, the device exhibits a high signal‐to‐noise ratio, robust environmental stability and efficient self‐powered operation at room‐temperature across multiple telecommunication bands. Under zero bias illumination at 1550 nm, it achieves a responsivity of 32 mA/W, a specific detectivity of 5 × 10 9 Jones, and a microsecond‐scale response time. Single‐pixel scanning experiments further demonstrate its potential for SWIR optical communication and imaging. This work provides a scalable route towards high‐performance, low‐power SWIR photodetection and imaging at room temperature.

Polarization-sensitive neuromorphic vision sensing excels in distinguishing light polarization states, offering intrinsic advantages in reducing glare and enhancing visual clarity in complex lighting environments, enabling advanced applications in autonomous driving, optical communication, and bioinspired imaging across the visible-to-infrared spectrum. Here, we present a polarization-sensitive neuromorphic phototransistor based on a high-quality, intrinsically anisotropic two-dimensional black arsenic-phosphorus nanosheet, which exhibits exceptional optoelectronic performance with a peak responsivity of 2.88 A W-1, a polarization ratio of 4.7 and a dynamic range of 40 dB within the near-infrared communication band. Through multidimensional input control, including polarization and gate voltage, the phototransistor successfully simulates synaptic behaviors analogous to human neural responses to visual stimuli, with paired-pulse facilitation values reaching 201

ABSTRACT Short‐wave infrared (SWIR) photodetectors are of great importance for applications such as optical communications. However, due to the bandgap limitation of silicon (Si) and the poor compatibility of many SWIR photoactive materials with conventional integrated‐circuit processes, the development of high‐performance, broadband SWIR photodetectors suitable for miniaturization and monolithic integration remains highly challenging. Herein, a visible‐to‐SWIR broadband photodetector based on a PtSe 2 thin‐film/Si heterojunction is proposed, and an 8 × 8 array device is further demonstrated. Centimeter‐scale PtSe 2 films with good uniformity are obtained by combining magnetron sputtering with subsequent selenization. Benefiting from a well‐engineered heterojunction band alignment, the PtSe 2 /Si unit cell exhibits a high on/off ratio up to 3.61 × 10 5 at −0.01 V with highly sensitive room‐temperature operation, including a broadband spectral response from 405 to 1550 nm, a specific detectivity of 2.58 × 10 11 Jones, and a microsecond‐level response speed. A dedicated readout circuit is further developed, enabling real‐time SWIR imaging. This work provides a scalable, CMOS‐compatible route toward room‐temperature sensitive SWIR detectors for next‐generation optoelectronic systems.

High-performance, broadband infrared photodetectors operating at room temperature are crucial for modern imaging, sensing, and communication systems. However, their development is hindered by the cryogenic cooling requirements of conventional narrow-gap semiconductors and the stability issues of emerging low-dimensional materials. Herein, a novel material engineering and interface regulation strategy for chalcogenide lead salt films is proposed. A high-performance heterojunction photodetector is constructed by integrating an in situ oxidized co-sputtered Sn-doped PbSe film with a magnetron-sputtered ZnO layer. This device exhibits an ultralow dark current density(similar to 40 pA cm(-)(2)) and an ultra-high signal-to-noise ratio(similar to 10(5)), an exceptional specific detectivity(D*) of similar to 1 & times; 10(10) Jones in the visible-near-infrared range and exceeding 1 & times; 10(8) Jones at 3.5 & micro;m, and a fast response time of hundreds of microseconds. Remarkably, it maintains over 90% of its initial performance after three months of unencapsulated storage in air. This work lays the groundwork for future solution-processed versions, provides a viable pathway toward stable and broadband infrared detection technology.

Bipolar response has emerged in recent years as a novel operational mechanism for photodetectors. By producing switchable positive and negative photocurrents under different external conditions, it enables multidimensional mapping and multiplexing of optical signals, supporting applications such as neuromorphic vision and on-chip computing. Two-dimensional materials have seen rapid development in the field of bipolar photoresponse in recent years due to their unique optoelectronic properties, including atomic-scale thickness, tunable band structures, and strong light-matter interactions. In detector architectures based on two-dimensional materials and their van der Waals heterostructures, various types of bipolar behaviors can be engineered through external stimuli including electric field, wavelength, polarization, and incident power. These functionalities have been widely employed in brain-inspired vision, convolutional pre-processing, event-based imaging, and multidimensional spectral analysis. This review focuses on the development and applications of bipolar photoresponse in photodetectors, providing a systematic summary of its physical mechanisms, material systems, device architectures, and representative advancements. Beyond enhancing device performance, bipolar photoresponse endows photodetectors with intrinsic computational and learning capabilities, enabling functions such as logic operations, feature extraction, and adaptive perception at the device level. Furthermore, the integration of bipolar-response devices with large-scale arrays and neuromorphic hardware platforms is expected to significantly reduce system complexity and power consumption. Despite the remaining challenges in device uniformity, stability, and large-area integration, bipolar photoresponse offers new pathways for multidimensional optical information fusion, low-power visual computing, and the evolution of next-generation intelligent optoelectronic systems.

Achieving stable and high efficiency under extreme brightness remains a critical challenge for high-definition organic light-emitting diode (OLED) displays. We designed and synthesized two bipolar host materials, SFX-Ph-Xant and DM-SAF-4 ' Ph-Xant, combining xanthone acceptor and spiro-core donors, which are linkage on the phenylene bridge at the meta-positions. They exhibit exceptional thermal and amorphous stabilities with glass transition temperatures >137 degrees C and high triplet energies over 2.8 eV. The top-emitting green phosphorescent OLEDs (PhOLEDs) with Ir (ppy)(3) doped in these hosts in emitting layer realized narrow spectra with full-width at half-maximum of 30 nm due to microcavity effect, and turned on at low voltages of 1.95 V. They delivered the maximum brightness of 71,183 cd m(-2) and high maximum current efficiency (CE) and power efficiency of 186.6 cd A(-1) and 250.6 lm W-1, respectively. Remarkably, these hosts endowed the devices extra efficiency stability with the efficiency roll-off of merely 7.2% and 8.3% at extremely high brightness of 10000 cd m(-2). Even subjected to ultra-high brightness of 71,183 cd m(-2), the CE still remained at 142.4 cd A(-1), outperforming many reported bottom-emitting OLEDs. These high-performance hosts along with top-emitting PhOLEDs architecture may find potential applications in ultra-high-definition OLED displays.

Chirality symmetry breaking (CSB) in Kerr nonlinear whispering-gallery-mode (WGM) microcavities is essential to advance nonlinearity-based nanophotonic devices. Normally, a high chirality in such platforms usually requires a high input power. However, a high input power will induce complicated nonlinear responses that may in turn weaken the chirality. Here, we propose a CSB strategy based on the Kerr nonlinearity, in which the add-drop microring (ADM) is driven by a dual-mirror system. The linear and nonlinear mode dynamics of the clockwise and counterclockwise modes in the microring are described by coupled mode theory. Both the total intracavity energy and the energy imbalance in the proposed configuration with bidirectional inputs can be synchronously varied by the reflection amplitudes and phase delays of the dual-mirror system. It is found that the input power threshold required to excite chiral states can be effectively reduced. Meanwhile, a higher chirality can be achieved under the same level of input power compared with a mirror-free ADM configuration. Furthermore, the proposed strategy can be potentially applied to nanoparticle sensing with robustness, higher sensitivity, and a broader operational power range. In addition, the low power thresholds of the multistage CSB and the distribution of exceptional points in the proposed configuration are also analyzed. The theoretical results are expected to be further applied to high-performance sensors and other low-power on-chip photonic devices.

Conventional infrared imaging systems rely heavily on external power supplies, limiting their applicability, flexibility, and portability. Here, we present a monolithically integrated photon-mapping near-infrared (780-900 nm) imager that operates in a self-driven mode, achieving a resolution of 5799 ppi and a frame rate of 18.5 kHz. The device vertically integrates multiple photovoltage-generating light-sensing units with a light-emitting unit in a cascaded configuration, enabling visible emission upon near-infrared excitation via internal carrier transfer. Its circuit-free architecture confers intrinsic flexibility and large-area scalability while remaining fully compatible with room-temperature operation. The system eliminates the need for pixel-level readout, thereby enabling spatial resolution beyond conventional pixel limits under optical excitation control. It further supports high-speed imaging governed by the transit dynamics of photogenerated carriers. In addition, its self-driven characteristic ensures inherently low background noise, enhancing the signal-to-background ratio and improving imaging quality. This work introduces a simplified, energy-efficient approach to infrared visualization.

Abstract Polarization-sensitive photodetection is a key capability for next-generation infrared imaging and sensing system, yet it is commonly realized through low-dimension materials or external optical components, which limits scalability and integration. Here, we demonstrate linear polarization-sensitive photodetection enabled by crystallographic orientation engineering in PbTe films. By elevating the substrate temperature during magnetron sputtering, PbTe films undergo a transition from randomly oriented polycrystalline growth to highly (200)-textured growth on SiO2/Si substrates, driven by surface energy minimization under nonepitaxial conditions. The preferential growth of the nonpolar (200) plane introduces pronounced optical anisotropy, manifested by polarization-dependent absorption and Raman vibrational modes. PbTe-based photodetector exhibits broadband photoresponse from visible to mid-infrared, fast response speed, and linear polarization sensitivity across multiple wavelengths. Polarization-resolved mid-infrared imaging at 3.5 μm is achieved, enabling extraction of degree and angle of linear polarization. This work establishes crystallographic texturing as an effective and scalable route toward polarization-sensitive infrared photodetectors.

The extension of the response spectrum of Si photodiode photodetectors (PDs) is a subject of extensive research, leveraging the benefits of Si complementary metal–oxide semiconductor (CMOS) technology for cost-effective and reliable read-out circuit manufacturing. Numerous high-performance, versatile, and large-array PDs with creative absorption materials and configurations have been successfully developed on the Si platform. These advancements include hyperdoping, heterojunction engineering, advanced nanophotonics, and Si photonics. Consequently, a thorough review of the recent developments in Si photodiode infrared (IR) PDs operating within the 1–14 µm wavelength range is both essential and meaningful. This review presents an overview of the latest innovations in Si photodiode infrared PDs. It commences with an investigation into fundamental structures and operational mechanisms, providing a detailed explanation of key operating principles. The discussion then transitions to a comprehensive analysis of various types of Si IR PDs. Following this, attention is directed toward an examination of integrated devices. The review further emphasizes the wide-ranging optoelectronic applications of Si PDs, including (algorithm) imaging, (encryption) communication, light logic operations, and bio-detection technologies. Finally, the review concludes by addressing both the challenges and perspectives associated with advancing Si photodiode IR PDs for enhanced photodetection capabilities.

Optical metasurfaces are widely studied due to their unprecedented wavefront modulation capabilities for multiple polarization channels. Current studies predominantly focus on complete polarization conversion. Recent progress indicates that the phases of quadruplex polarization channels can be independently modulated under incomplete polarization conversion conditions. However, these four-channel phase modulation operations are limited to circular or linear polarization states and neglect amplitude modulation. Here, a strategy is proposed to achieve four-channel phase modulation and flexible energy distribution of arbitrary orthogonal polarization states under incomplete polarization conversion conditions. Wavefront modulations for quadruplex channels of arbitrary orthogonal polarization states (circular, linear, elliptical, and first-order cylindrically vectorial), such as orbital angular momentum manipulation, Bessel beam generation, deflection, and holography, are numerically demonstrated based on this strategy. Furthermore, the energy distribution of the quadruplex polarization channels is achieved by varying the polarization conversion efficiency. These operations are implemented through all-dielectric free-standing bilayer metasurfaces. The proposed design strategy extends the application of metasurfaces in multichannel optical field modulation.

Accurate visual sensing in extreme high-contrast lighting environments is critical for emerging intelligent systems such as autonomous vehicles, smart surveillance, and robotics. These systems rely heavily on high dynamic range (HDR) imaging to capture scenes with wide illumination variations. However, existing HDR solutions primarily depend on computational algorithms or hardware-intensive techniques such as multiexposure fusion or mechanical modulation, which suffers from latency, motion artifacts, high power consumption, and limited adaptability. Here, we present a hardware-centric approach that realizes HDR functionality directly into the photodetectors of a camera image sensor. Our design leverages an engineered tunneling mechanism to achieve bias-controllable, continuously tunable dynamic range covering up to 150 dB. In real-world high-contrast autonomous driving scenarios, this sensor-level HDR capability enables robust object classification confidence score exceeding 91% across the entire exposure scene. By shifting HDR processing to the sensor front-end, our approach substantially reduces the computational load, enabling system-level efficiency, speed, energy consumption, and recognition reliability. This prototype paves the way for the development of next-generation, compact, on-chip visual preprocessing hardware for intelligent vision systems.

High quality-factor (Q) resonant metasurfaces have attracted significant attention due to their potential applications in cutting-edge fields of optics. However, limited by intrinsic dissipation losses, achieving both an extremely high Q factor and perfect absorption for strong light-matter interaction control in plasmonic metasurface is still highly challenging. Here, we demonstrate a plasmonic metasurface composed of symmetric double-pillars (SDPs) on a gold film, in which the flexibly tuned geometric space enables precise control over the nonlocality of dark-mode Fabry-Perot bound states in the continuum (FP-BIC) and its coupling with Rayleigh anomaly (RA)-associated lattice resonance. Based on the coupling control between these two modes, the radiative and dissipative losses are well balanced, resulting in a measured Q factor of 2180 (theoretical 2800) and absorption nearly 99

Uncooled midwave infrared (MWIR, 3-5 mu m) PbSe photodetectors (PDs) have attracted increasing attention owing to their lightweight form factor, low power consumption, and scalable operational stability. However, achieving high performance in miniaturized pixels remains a major challenge, as planar architectures suffer from limited absorption and carrier transport efficiency and photonics-enabled enhancement strategies for chalcogenide-based devices remain insufficiently explored. Here, we report a CMOS-compatible PbSe thin film grown by magnetron sputtering coupled to a resonant metasurface-cavity absorber. Electromagnetic design yields near-unity absorptance in simulation, while fabricated metasurface-cavity-enhanced PbSe devices exhibit a broadband absorption enhancement of similar to 500% relative to planar PbSe controls across the MWIR regime, achieving a peak absorptance of 83.77%. This enhanced light-matter interaction enables a high responsivity of 336 mA & centerdot;W1- and a detectivity of 2.52 & times; 109 Jones at 3.3 mu m, while maintaining an ultrafast response time of 5 mu s. Furthermore, the detector also exhibits broadband sensitivity extending from the visible to the near-infrared, delivering a maximum responsivity of 5.64 A & centerdot;W1- and a detectivity of 4.23 & times; 1010 Jones, along with pronounced blackbody sensitivity. This work not only demonstrates room-temperature, high-sensitivity, broadband detection in a scalable platform but also highlights the potential of nanophotonic-chalcogenide integration for advancing uncooled infrared technologies and enabling large-area MWIR optoelectronic applications.