利用自行研制的纳秒脉冲实验平台(输出脉冲前沿30 ns,半宽百纳秒)和标准介电强度测试仪,对变压器油、甘油、去离子水、Galden HT200四种液体绝缘介质在直流与纳秒脉冲下的击穿特性进行了实验研究与结果比对,结果表明:在直流与纳秒脉冲下,Galden HT200均具有最高的击穿场强,且两种情况下均比变压器油高出40％以上;纳秒脉冲下,Galden HT200与变压器油的击穿场强均提高6.5～7倍,Galden HT200击穿过程耗时最短(ns量级),其次是变压器油(20 ns),然后依次为甘油(45 ns)和去离子水(70 ns);多次放电后,粘度系数最大的甘油更易在电极间隙处聚集碳化放电产物,粘度系数较小的Galden HT200和去离子水则无明显痕迹,但二者放电过程会产生明显的冲击波,多次放电后易造成间隙电极松动.

In order to meet the requirements of anti EMP performance test of the difference size effect test compounds,and to generate the simulated EMP environments with more comprehensive coverage and more ideal waveform,in the paper,the basic composition and working principle of the EMP-simulator diver with one-stage pulse sharpening and based on the Marx generator are introduced.According to the actual experiences of design and debugging of this kind of devices,some problems that may be encountered when using the ideal principle to design these drivers are analyzed,and some targeted solutions are provided.In addi-tion,some drivers for the small-and-middle scale EMP simulator with rated output voltage of 100-600 kV are developed.With the development of super compact Marx generator,compact flat-form film capacitor and low inductance output switch,the optimiza-tion of the connection structure,and the selection of reasonable parameters,these drivers connected with the load of 120-180 Ωcan produce the ideal double exponential waveforms with the rise time of 1.2-2.7 ns and the half width of 32-41 ns.

In this paper,a 2 MV self-triggered switch with capacitance coupling circuit is presented under the microsecond pulse.The switch has a simple structure and a high reliabil-ity.Based on the electric field strength and circuit simulation,some key configurations and circuit parameters are obtained.The calculation results show that the voltage of designed triggered gap accounts for 1 .2 1% of the main gap,and the nonuniform factor of the main gap is 1.64,the breakdown voltage of the self-triggered gap is about 21 kV when the maxi-mum working voltage of the switch is 2.27 MV at the air pressure of 0.7 MPa.

采用快开通功率MOSFET,通过优化驱动电路、磁芯参数以及耦合结构,设计了基于半导体开关和直线变压器驱动源（LTD）技术的高重频快沿高压脉冲源。该脉冲源由四级LTD串联而成,可实现单次脉冲和最高频率2 MHz脉冲串输出。脉冲最高幅值约2.3kV,上升沿约7ns,脉宽约90ns,下降沿约20ns,输出电压效率约95%。该脉冲源结构紧凑,输出脉冲稳定,实现了模块化设计,可作为重频电磁脉冲模拟源使用。

实验研究了长60 m、宽20 m、高10 m的大尺寸TEM天线的传输特性,其脉冲源采用薄膜开关与天线一体化设计,输出电压幅值可达10 kV,上升沿约1.2 ns.实测了TEM天线内部的电场分布,研究了该大尺寸TEM天线中电场分布规律,给出了脉冲上升沿与传输距离的关系、脉冲幅值与传输距离的关系,总结了快沿双指数波在天线中传输的高频损耗特性,给出了实验空间的选择方法.研究结果表明:上升沿随传输距离呈线性增大趋势,两极板中间测点增大速度最快,传输50 m距离,上升沿增大约1.2 ns;电场幅值随传输距离呈指数减小趋势.

介绍了兆伏级有界波电磁脉冲模拟器脉冲源的组成及特点.通过数值模拟分析了模拟装置等效电路,给出了峰化电容及输出开关对装置输出波形的影响,总结了峰化单元的设计特点,提出了一种低气压、低电压短间隙放电等效高气压、高电压长间隙放电的方法.同时,基于等效方法设计了结构尺寸为1∶1验证实验,实测了实验电路输出电场波形.实验结果表明,采用电容、开关、天线一体化的结构设计,能够最大限度地减小峰化回路的电感,输出双指数波上升沿可达到1.8 ns.该实验为兆伏级有界波电磁脉冲模拟器峰化段的设计提供了参考.