Under the Ar atmosphere,Si-particulate was spread into the glow discharging area through the system of cold plasma Si-particulate purification.After a series of treatments,the surface roughness was increased obviously,and the purity increase from 98.75% to 99.56%.Based on it,a vibrational synclinal chamber of RF Induction discharge plasma was design,and the purity can be increased to 99.96%,which is approached to the requirement of solar-grade silicon.It also provide a new thought for the future development of the research.

The drop process of the particulates in the reaction area was analyzed, and the formulas for the maximum velocity, and the drop time of the particulates were given. The average kinetic energies and the flow rates of ions at different positions were obtained. The behaviors of the neutrals in the sheath were analyzed and their average energies and the flow rates at different positions were also given. The etching rates for both of the ions and the neutrals with high energy at different positions were calculated. The computing results showed that the etching rates of the neutrals were much higher than that of the ions in more volume of the chamber. The maximum etching capacity in each drop would be up to 50 layers of the atoms, that is, the etching rate would be 1.1 × 1016/(cm2·s-1), when Usb is 2300 V. This is important to the both of the surface etching and the purity in plasmas.

The kinematics of particulate drop in plasma is studied, and the velocity equations of particulate drop are provided. The experimental study of kinematics of SiGe alloy particulates has been carried out. The results indicate that for increasing the purity effect, the drop time of the particulates must increase, and the particulate velocity must decrease. This study could be applied to fabrication of high purity materials by cold plasma.

The purification model of macroscopic particles in descending process is established from the transport phenomena of particles and plasma chemicals. The concentration distribution, acceleration, velocity, and descending time of all kinds of particles and the removing amount of the impurities are calculated. Being identical with the experimental effects, the results show that about 97?% of impurities in silicon-germanium alloy powder can be removed.

The transport model of macroscopic particles in plasma is introduced, and the acceleration, the velocity and the time of the descent of the particles are calculated. The criterion of the gathering of the particles is obtained and a conclusion that the purity effects will be better in descending process. All these are very important for the industrial appliance of plasma.

The purification by plasma during sedimentation of particulates is studied in this paper. The analyzed and calculated data show that when sedimentation rate and time are suitable, the purity of particulates can be improved by two orders of magnitude. Some calculated data and improvements on purification are discussed in detail.

研究了冷等离子体提纯硅粉薄层时硅粉的粒度与硅粉薄层的厚度对提纯效果的影响.实验表明,硅粉的颗粒大小在60-80μm之间,硅薄层的厚度为0.5mm时提纯效果较好.

实验表明,辉光放电产生的等离子体对硅、TiN、SiC等材料具有明显的提纯效果,对其进行了讨论,并指出应用前景.

应用反应动力学方法建立基元反应速率方程并按工艺条件进行耦合,得出了以宏观工艺参数表达的提纯速率方程.这种方程便于计算,能指导工艺优化并容易为工程师应用.计算结果与实验数据能较好的吻合.

Rising the temperature of silicon powder layer, the cold plasma can purify silicon up to more than 99.9%. The purifying mechanism is analyzed with the reaction kinetic method and the necessary equations have been set to discuss the effects on the purification of silicon powder layer. The removed rate of inclusion is improved with the increase of the temperature of silicon powder and reaction chamber.

The criterion of the target poisoning of TiN film was deduced from the target kinetics and the particle transfer process. The target poisoning model described the effect of processing parameters on target poisoning. This model provided the theoretical basis to solve the contradiction between the high growth rate and composition matching of the film and design novel poisoning-free reaction chamber.

Based on the study of target kinetics with target poisoning taken into account, the sputtering rate of Ti target was analyzed. The equation of TiN film growing rate by reaction sputtering was derived according to the production and transfer of the source particles. The calculating results are in good agreement with the experimental data.

Nickel electrochromic films grown by DC sputtering have been investigated for electrochromism in alkaline solution. Nickel hydroxide was directly used as the target, which produced films with good initial electrochromism without activation. An XPS study reveals that the oxygen content in the sputtering system may alter the atomic ratio in the deposited film, although this change not obviously affects the electrochromism of the film. Up to 10(5) bleach and colouring cycles suggest that the film has good durability against extended redox reactions. As an indirect support of the band theory applied to explain the electrochromic mechanism, electronic conductivities, measured by the four probe method, are coincident with the energy band theoretic prediction. Voltammetric cycle tests, time response and the optical properties are also discussed.

The elementary chemicophysics processes were studied in terms of the interaction and transfer of microparticles, and the sputtering rate and energy distribution of the ions were also calculated. The results can be used as the basis for further study of the growing rate of sputtering film and the target poisoning.

The hydrometallurgical technology of purifying metallurgical grade silicon for solar grade silicon in medium scale was reported, with the emphasis on the low cost process and the high purity of silicon particle. The recovery rate of silicon powder, the silicon particle size and the acid concentration were described. The mechanism of ��passivation effect�� which occurs in high acid concentration abstraction was studied.

The common technology for fabricating hard thin film was stated in terms of film quality, growing rate and energy saving. The technological parameters of reactive sputtering were analyzed. The particle transportation in the reactive sputtering system was studied in detail. The stability conditions for reactive sputtering technology were discussed.