Представлены результаты разработки вакуумного трибометрического стенда для высокотемпературных трибологических испытаний материалов и покрытий в условиях высокого вакуума при температурах до 300 °С. В стенде реализован стандартный метод трибологических испытаний при возвратно-поступательном скольжении шара по плоскости (ASTM G133-05). Приведены результаты ресурсных испытаний твердосмазочных покрытий на основе дисульфида молибдена, осажденных методом магнетронного распыления MoS2-мишени при различных режимах.

The article is devoted to the study of the process various modes influence on the tribological characteristics of the thin-film solid lubricant MoS2-coatings deposited by the MoS2-target magnetron sputtering in an argon medium. Temperature and bias voltage on the substrate, as well as the coating thickness influence on the coatings coefficient of friction and the wear life is shown.

Представлены результаты исследования влияния рабочего давления и мощности разряда на скорость роста тонких пленок дисульфида молибдена на подложках кремния при магнетронном распылении мишени в вакууме. На основании экспериментальных данных разработана эмпирическая модель, связывающая скорость роста пленки с давлением аргона и мощностью разряда на магнетронной распылительной системе.

Abstract In this article, we present the results of AFM studies on molybdenum disulfide ultrathin films (with a thickness of 3 to 13 nm) deposited on silicon substrates in vacuum by the magnetron sputtering MoS2 target during 10, 20 and 30 seconds. The film samples structural features were estimated and the deposition time influence on surface roughness, crystals size and its distribution asymmetry, fractal dimension was determined.

The research results of the working pressure and discharge power influence on the growth rate of molybdenum disulfide thin films on silicon substrates during magnetron sputtering of the target in vacuum are presented. Based on experimental data, an empirical model has been developed that relates the film growth rate to argon pressure and discharge power on a magnetron sputtering system.

В работе представлены результаты оптической спектроскопии ультратонких пленок дисульфида молибдена, полученных на подложках кремния методами постоянного (DCMS) и импульсного (PMS) магнетронного распыления мишени MoS2 в вакууме, а также при осаждении потока на подложку в условиях внешнего магнитного поля. Приведены результаты расчета оптической ширины запрещенной зоны (ШЗЗ) образцов тонких пленок MoS2.

Представлены результаты АСМ-исследований ультратонких пленок дисульфида молибдена (толщиной от 3 до 13 нм), полученных методом магнетронного распыления мишени в вакууме в течение 10, 20 и 30 секунд на подложках кремния. Выполнена оценка структурных особенностей полученных образцов пленок, определено влияние времени осаждения на шероховатость, размеры кристаллов и асимметрию их распределения, фрактальную размерность.

The article presents the optical spectroscopy results of molybdenum disulfide ultrathin films deposited on Si substrates by the methods of direct current (DCMS) and pulsed (PMS) magnetron sputtering MoS2 target in vacuum, and also at flow deposition under the influence of external magnetic field on the substrate. Furthermore, the article revues the results of optical bandgap calculation for all samples of MoS2 thin films.

The results of spectrophotometric and AFM researches of molybdenum disulfide ultrathin films, obtained on silicon substrates by magnetron deposition at various technological conditions are presented.

In this article the results of deposition and investigation by atomic force microscopy of ultrathin films obtained on silicon substrates by the molybdenum disulfide target magnetron sputtering are presented.

Abstract MoS2 thin films were grown on sapphire substrates by the MoS2 target magnetron sputtering, using the DC mode in Ar atmosphere at the substrate temperature of 200 °C for 10, 20 and 30 sec. The results of AFM studies have shown that the morphology of MoS2 thin films changes significantly with the increase of the process time. At the initial stage of growth, after 10 sec of deposition, a continuous film about 3.5 nm thick was observed.

Molybdenum disulfide (MoS2) thin films were prepared by magnetron sputtering MoS2 (99.9% purity) target at the different substrates (such as sapphire and silicon) at the various argon pressure and power discharge. Deposition parameters influence on the structure and optical properties of the MoS2 thin films were analyzed by atomic force microscope (AFM) and spectrophotometer that was used for detecting reflectance spectra and then to calculate thin films bandgap. MoS2 thin films on sapphire substrates have smoother surface roughness and higher bandgap energy than MoS2 thin films on Si substrate. MoS2 thin films bandgap energy increasing and surface roughness decreasing was caused by power discharge decreasing.

Molybdenum disulphide (MoS2) thin films deposited on silicon substrates by magnetron sputtering spectrophotometry study results are presented. Graphical-calculated method for MoS2 thin film samples bandgap values determination was used.

Transition Metal Dichalcogenide (TMDC) such as MoS2 and WS2, due to unique electronic and optical properties, have sizable band gap, allowing applications such as transistors, photo detectors and other electronic devices. So, fabrication and analysis of these films are important for new generation devices. The substrate temperature strongly effects on the sputtered MoS2 films structure and were weakly influence on optical properties of MoS2 films. The band gap (Eg) depends on thickness of the MoS2 films.

Molybdenum disulfide thin films deposited on silicon substrates by the magnetron sputtering structural features investigation by atomic force microscope results are presented.

Nowadays after the long-term efforts of physicists and dantists we came up to the creation of very important device for human life - laser drilling machine. However the problem of laser choice for this machine has not been solved yet. In table 1 are represented the earlier published data of main lasers — candidates on the role of "drill" [1-5]

This paper discusses optimum regimes of laser destruction of tissue, while maintaining optimum action with feedback.