The epitaxial growth technique of InGaAs photodiode structures based on a digital InGaAs/GaAs metamorphic buffer layer by metalorganic chemical vapor deposition has been developed. The spectral dependence of the photocurrent of photodiodes based on the produced structures has a maximum at the 1.16 µm wavelength. The photosensitivity range at 10% of peak is 0.99 - 1.33 µm at room temperature. The current-voltage characteristics in the temperature range 9–300 K were investigated. It is shown that the dark current consists of generation-recombination and tunneling components. The dark current density at room temperature was 8×10 -5 A/cm 2 with a reverse bias of -5 V.

The results of studies of InP/GaAs heterostructures based on metamorphic layers with stepwise and digital changes in composition are presented. The electrophysical characteristics of diodes fabricated based on these structures are compared with diodes grown on matched substrates with InP and GaAs active layers. It is shown that the use of InP/GaAs diodes in a triple balanced mixer made it possible to reduce the local oscillator signal power by a factor of 20.

Operation modes of laser structures with controlled polarization of light have been studied and the results of measuring polarization characteristics are presented. The possibility of controlling both the linear and circular polarizations of light with corresponding modification of the laser design is shown. In particular, stable lasing at two orthogonally polarized modes in the near-IR range with the intensity ratio of radiation components ITE/ITM ≈ 4.5 is implemented. The possibility is confirmed of generation of circularly polarized radiation in edge-emitting laser diodes by magnetization of a combined semitransparent mirror with a ferromagnetic CoPt layer deposited on the end face of the laser cavity. The degree of polarization is ±1.25% in the CoPt layer saturation magnetization mode.

The effect of sulfide passivation (chemical treatment in a peroxide-sulfur etchant and in a solution of Na2S in isopropanol) and complication of the profile of the lateral surface of thyristor mesastructures on the blocking ability of GaAs thyristor mesastructures is investigated. It is shown that the blocking voltage of the chips increases several times both after chemical treatment of the surface and with the complication of the surface topology. Keywords: thyristors, blocking voltage, sulfide passivation, gallium arsenide, mesastructure.

Приведены результаты исследования режимов работы лазерных структур с управляемой поляризацией света, в том числе результаты измерения поляризационных характеристик. Показана возможность управления как линейной, так и циркулярной поляризацией света при соответствующей модификации конструкции лазера. В частности, осуществлена устойчивая лазерная генерация на двух ортогонально-поляризованных модах в ближнем ИК диапазоне с соотношением интенсивностей компонент излучения ITE/ITM~ 4.5. Реализована возможность генерации циркулярно-поляризованного излучения в торцевых лазерных диодах посредством намагничивания комбинированного полупрозрачного зеркала с ферромагнитным слоем CoPt, нанесенного на торец лазерного резонатора. В режиме насыщения намагниченности слоя CoPt значение степени поляризации составило ±1.25%. Ключевые слова: полупроводники, лазерный диод, квантовая яма, поляризация.

GaAs-based heterostructures grown by metalorganic vapor-phase epitaxy on virtual Ge/Si substrates using an AlxGa1-xAs seed layer with different aluminum content x in the solid solution are investigated. The effect of solid solution composition on the density and size of antiphase domains emerging on the sample surface and on the optical properties of the GaAs layer is shown. Si(100) substrates with a small unintentional miscut of 0.7° to [110] were used for growth.

The effect of sulfide passivation (chemical treatment in a peroxide-sulfur etchant and in a solution of Na2S in isopropanol) and complication of the profile of the lateral surface of thyristor mesastructures on the blocking ability of GaAs thyristor mesastructures is investigated. It is shown that the blocking voltage of the chips increases several times both after chemical treatment of the surface and with the complication of the surface topology.

GaAs-based heterostructures grown by metalorganic vapor-phase epitaxy on virtual Ge/Si substrates using Al x Ga 1 – x As seed layers with different aluminum contents x in solid solution have been investigated. The influence of the x value on the density and sizes of antiphase domains, outcropping onto the sample surface, and optical properties of the GaAs layer is demonstrated. The heterostructures have been grown on (100) substrates with small random off-cut from the nominal crystallographic orientation (0.7° towards [110]).

The results of studying a GaAs-based laser with InGaAs waveguide quantum wells, which operates at room temperature in the electric-pumping mode, are presented. The minimal generation threshold is 15 A. Stable lasing at a wavelength of 1010 nm is attained, and the width of the radiation pattern in the plane perpendicular to the structure layers is (10 ± 2)°.

This paper presents the results of research of electrically pumped InGaAs/GaAs laser on waveguide quantum wells, operating at room temperature. The minimum threshold current was 15 A. The stable lasing at a wavelength of 1010 nm was obtained, and the width of the radiation pattern in a plane perpendicular to the layers of the structure was (10 ± 2) angular degrees.

AbstractA laser structure comprising metamorphic InGaAsP layer and InGaAs quantum wells on a non-inclined Si(001) substrate with relaxed Ge buffer layer has been grown for the first time by metal-organic vapor phase epitaxy (MOVPE). The optically pumped lasers exhibit stimulated emission at a wavelength of 1.3 μm. At liquid-nitrogen temperature, the threshold power density of pumping at 0.8 μm amounted to 250 kW/cm^2.

AbstractThe results of studying the reverse dark currents of photodiodes for a wavelength of 1.06 μm grown on a GaAs substrate with the help of an InGaP metamorphic buffer layer are presented. The metalorganic chemical vapor epitaxy (MOCVD) growth technology of InGaP metamorphic buffer layers with a stepwise composition variation is developed. Photodiodes with a photosensitive area of 1 mm in diameter and radiation input through the substrate are fabricated. The photodiode dark current at room temperature and reverse bias of –3 V was 50 nA. It is assumed that the bulk component of the dark current is caused by the tunneling mechanism through the trap levels.

The results of studying the reverse dark currents of photodiodes for a wavelength of 1.06 μm grown on a GaAs substrate with the help of an InGaP metamorphic buffer layer are presented. The metalorganic chemical vapor epitaxy (MOCVD) growth technology of InGaP metamorphic buffer layers with a stepwise composition variation is developed. Photodiodes with a photosensitive area of 1 mm in diameter and radiation input through the substrate are fabricated. The photodiode dark current at room temperature and reverse bias of –3 V was 50 nA. It is assumed that the bulk component of the dark current is caused by the tunneling mechanism through the trap levels.

The result of investigation of InGaAs photodetectors grown on GaAs substrate with metamorphic InGaP buffer is shown in this paper. It has been shown experimentally that the use of the gradient InGaP metamorphic layer in an InGaAs photodiode structure improves the spectral characteristics and crystalline quality of the structure and leads to reduction of dark current by an order of magnitude compared to photodiodes fabricated with metamorphic InGaAs layers.

A laser structure comprising metamorphic InGaAsP layer and InGaAs quantum wells on a non-inclined Si(001) substrate with relaxed Ge buffer layer has been grown for the first time by metal-organic vapor phase epitaxy (MOVPE). The optically pumped lasers exhibit stimulated emission at a wavelength of 1.3 μm. At liquid-nitrogen temperature, the threshold power density of pumping at 0.8 μm amounted to 250 kW/cm2.

InGaAs/GaAs/AlGaAs laser diodes with quantum wells are grown by the metal-organic chemical vapor deposition (MOCVD) method on an exact Si (001) substrate with a Ge buffer layer. The diodes generate stimulated emission in the pulsed mode at room temperature in the spectral range from 1.09 to 1.11 μm.

Созданы InGaAs/GaAs/AlGaAs лазерные диоды с квантовыми ямами, выращенными методом МОГФЭ на неотклоненной Si (001)-подложке с буферным слоем Ge. Диоды генерируют стимулированное излучение в импульсном режиме при комнатной температуре в спектральном диапазоне 1.09-1.11 мкм. DOI: 10.21883/FTP.2017.11.45105.19

We report on realization of the InGaAs/GaAs/AlGaAs quantum well laser grown by metallorganic chemical vapor deposition on a virtual Ge-on-Si(001) substrate. The Ge buffer layer has been grown on a nominal Si(001) substrate by solid-source molecular beam epitaxy. Such Ge buffer possessed rather good crystalline quality and smooth surface and so provided the subsequent growth of the high-quality A3B5 laser structure. The laser operation has been demonstrated under electrical pumping at 77 K in the continuous wave mode and at room temperature in the pulsed mode. The emission wavelengths of 941 nm and 992 nm have been obtained at 77 K and 300 K, respectively. The corresponding threshold current densities were estimated as 463 A/cm2 at 77 K and 5.5 kA/cm2 at 300 K.

The optimization of InGaP/GaAs/InGaAs laser structures with tunnel-coupled waveguides with the aim of reducing the directivity diagram is presented. The width of the directivity diagram in the plane normal to the p–n junction is reduced to 28° in the lasers produced.