Based on the analysis of different theory for glass tempering process, the "structural theory" with stress relaxation and structural relaxation effects was selected to investigate the tempering of flat glass quantificationally. The geometrical model with small size and non-homogeneous mesh were considered to build the finite element models according to the characteristics of stress field. The tempering process of flat glass with 12 mm thickness was calculated with the verified finite element model. The transient and permanent stress of the central area, edge and corner end of the flat glass are obtained and analyzed. From the calculation results of basic case, the transient tensile stress at the upper surface of the central area, the center point of edge, the edge of edge, the edge of corner were 14.30,18.94, 40.76 and 34.75 MPa, respectively. The transient tensile stress at these points were dangerous to promote the glass to break during the tempering. In addition, the point at the diagonal line of symmetry plane in the thickness direction, which is 14 mm from corner, has the maximum permanent tensile stress about 70.01 MPa in the flat glass after tempering. Thus, it is indicated that the corner is the weakest region in the tempered glass.
新一代锂铝硅玻璃逐渐成为航空透明件的主流结构材料,由于其较高的弹性模量和优异的离子交换能力,经过化学增强处理后具有优异的力学性能,能够很好地满足航空透明件轻质、高强的需求.研究了1.8 mm厚度锂铝硅玻璃经过化学增强后的抗冲击性能变化,采用不同增强工艺制备了多组样品进行落球冲击测试,并依据应力包线进行了初步理论计算,探讨了玻璃中心张应力对抗冲击性能的影响.研究结果表明,1.8 mm厚度锂铝硅玻璃表面压应力为930 MPa左右时,应力层深度在130~160μm范围内抗冲击性能较佳,玻璃具备较好的力学性能.
化学强化技术亦称离子交换技术,因可在玻璃表面形成压缩压应力层改善玻璃的机械强度而被广泛应用于建筑、交通等领域.化学强化工艺参数的变化直接影响着化学强化后玻璃的性能.本文综述了离子交换反应原理、玻璃组成、化学强化温度、化学强化时间及熔盐组成对化学强化过程的影响,并简要介绍了电场辅助化学强化工艺与无熔盐化学强化工艺的优点与不足.总结国内外化学强化技术的研究进展,提出玻璃现有化学强化技术的不足,为玻璃化学强化技术的科学研究与发展提供参考.
为了研究不同热处理温度下铁镍合金薄膜的形貌结构以及镀膜玻璃的性能,本文采用真空电子束加热蒸发镀膜技术在玻璃基片上镀铁镍合金薄膜,通过多晶X射线衍射(XRD)和场发射扫描电子显微镜(FESEM)分析结构,测试镀膜玻璃的光学性能、电磁性能以及电磁屏蔽性能.结果表明:随着热处理温度的升高,薄膜的结晶性能变好,逐渐析出体心立方晶相,在(110)方向具有择优取向,当热处理温度过高时薄膜中出现孔隙;热处理温度对镀膜玻璃雾度的影响小于1%,但镀膜玻璃的可见光透过率、表面方块电阻和相对磁导率会随热处理温度变化呈现一定规律变化;铁镍合金镀膜玻璃在30 MHz以下的低频电磁波频段内的屏蔽效能大于30 dB,在14 kHz时最高达到55 dB,是一种低频电磁屏蔽的优选材料.