The topological features of the formation of (Co40Fe40B20)15(LiNbO3)85 composite films deposited by ion-beam method on a metal electrode Cr/Cu/Cr has been investigated. The presence of a dielectric layer between the upper Cr layer and the CoFe–LiNbO3 film with a thickness of dox ≈ 15 nm has been established. The difference in the size of granules near the amorphous layer and in the volume of the film has been shown. A model of the formation of (Co40Fe40B20)x (LiNbO3)100 – x nanocomposite film at the initial stage of growth has been proposed. It has been shown that the formation of α-LiNbO3 layer on the chrome metal film surface is possible with the realization of island and layer-by-layer growth mechanisms for various phases of the composite.

The paper reveals the influence of Li, B and the composition of metal contacts on the processes of resistive switching in memristive structures M/NC/D/M. After field exposure in structures Cu/(Co50Fe50)x(LiNbO3)100–x/s-LiNbO3/Cu/sitall, Cu/(Co50Fe50)x(LiNbO3)100–x/d-LiNbO3/Cu/sitall and Cu/(Co40Fe40B20)x(SiO2)100–x/d LiNbO3/Cu/sitall at x < 13 was detected a residual voltage (up to 16 mV) due to the electromigration of Li ions, that leading to a “reversible” type of VAC hysteresis and instability of the time dependencies of induced resistive states. In the structures of Cu/(Co40Fe40B20)x(LiNbO3)100–x/s-LiNbO3/Cu/sitall, Cr/Cu/Cr/(Co40Fe40B20)x(LiNbO3)100–x/s-LiNbO3/Cr/Cu/Cr/sitall containing B, the residual voltage is reduced by formation of chemical compounds B with percolated Li atoms. When limiting the electromigration of Li ions, the main mechanism of resistive switching is the processes of electromigration of oxygen vacancies in the dielectric oxide layer. Suppression of residual voltage in the Cr/Cu/Cr/(Co50Fe50)x(LiNbO3)100–x/s-LiNbO3/Cr/Cu/Cr/sitall structure due to the introduction of a Cr buffer layer that does not dissolve Li leads to the absence of bipolar resistive switching in these structures.

The paper reveals the influence of Li, B and the composition of metal contacts on the processes of resistive switching in memristive structures M/NC/D/M. After field exposure in structures Cu/(Co50Fe50)Х(LiNbO3)100-Х/s-LiNbO3/Cu/sitall, Cu/(Co50Fe50)Х(LiNbO3)100-Х/d-LiNbO3/Cu/sitall and Cu/(Co40Fe40B20)Х(SiO2)100-Х/d-LiNbO3/Cu/sitall at x < 13 at.% was detected a residual voltage (up to 16 mV) due to the electromigration of Li ions, that leading to a "reversible" type of VAC hysteresis and instability of the time dependencies of induced resistive states. In the structures of Cu/(Co40Fe40B20)Х(LiNbO3)100-Х/s-LiNbO3/Cu/sitall, Cr/Cu/Cr/(Co40Fe40B20)Х(LiNbO3)100-Х/s-LiNbO3/Cr/Cu/Cr/sitall containing B, the residual voltage is reduced by formation of chemical compounds B with percolated Li atoms. When limiting the electromigration of Li ions, the main mechanism of resistive switching is the processes of electromigration of oxygen vacancies in the dielectric oxide layer. Suppression of residual voltage in the Cr/Cu/Cr/(Co50Fe50)Х(LiNbO3)100-Х/s-LiNbO3/Cr/Cu/Cr/sitall structure due to the introduction of a Cr buffer layer that does not dissolve Li leads to the absence of bipolar resistive switching in these structures.

The effect of oxygen and water vapor in a sputtering chamber during the deposition of thin-film (Co40Fe40B20)x(LiNbO3)100 – x nanocomposites on the electrical properties of the heterogenous system is investigated. It is found that the resistivity of (Co40Fe40B20)x(LiNbO3)100 – x nanocomposites increases significantly with the partial pressure of reactive gases (oxygen and water vapor). A noticeable shift of the percolation threshold towards higher values of the metal phase volume concentration, which is observed in the plane of the film and in the perpendicular direction during the synthesis of composites with the addition of reactive gases, is attributed to the increase in the volume concentration of the dielectric phase. It is found that the percolation threshold for the measurements in the geometry perpendicular to the plane of the film is characterized by a much lower concentration of the Co40Fe40B20 alloy atoms than that for the measurements in the plane of the film, which is associated with an elongated shape of granules in the film growth direction and the effects of Coulomb blockade suppression by a high transverse electric field.

The topological features of the formation of (Co40Fe40B20)15(LiNbO3)85 composite films deposited by ion-beam method on a metal electrode Cr/Cu/Cr has been investigated. The presence of a dielectric layer between the upper Cr layer and the CoFe–LiNbO3 film with a thickness of dox ~ 15 nm has been established. The difference in the size of granules near the amorphous layer and in the volume of the film has been shown. A model of the formation of (Co40Fe40B20)x(LiNbO3)100–x nanocomposite film at the initial stage of growth has been proposed. It has been shown that the formation of α–LiNbO3 layer on the chrome metal film surface is possible with the realization of island and layer-by-layer growth mechanisms for various phases of the composite.

The topological features of the formation of (Co40Fe40B20)15(LiNbO3)85 composite films deposited by ion-beam method on a metal electrode Cr/Cu/Cr has been investigated. The presence of a dielectric layer between the upper Cr layer and the CoFe-LiNbO3 film with a thickness of dox~ 15 nm has been established. The difference in the size of granules near the amorphous layer and in the volume of the film has been shown. A model of the formation of (Co40Fe40B20)x(LiNbO3)100-x nanocomposite film at the initial stage of growth has been proposed. It has been shown that the formation of α-LiNbO3 layer on the chrome metal film surface is possible with the realization of island and layer-by-layer growth mechanisms for various phases of the composite. Keywords: nanocomposite, growth mechanisms, self-organization, structure.

Influence of oxygen and water vapor in vacuum chamber during the deposition process of (Co40Fe40B20)x(LiNbO3)100-x thin film nanocomposites on electrical properties has been investigated. A significant growth in the electrical resistivity of (Co40Fe40B20)x(LiNbO3)100-x nanocomposites has been established with an increase in reactive gases partial pressure (oxygen and water vapor). It has been found, that the recrystallization temperature of composites deposited in argon atmosphere also increases with metallic phase concentration. While the recrystallization temperature of (Co40Fe40B20)x(LiNbO3)100-x nanocomposites sinthesized in mixed atmosphere of Ar with the reactive gases (oxygen or water vapor) decreases due to increase of the heterogeneous structure oxidation. Keywords: Metal-insulator nanocomposites, electrical resistivity, thermal stability, phase composition, oxygen, water vapor.

Исследованы поглощающие свойства образцов стеклотекстолита с нанесенным функциональным покрытием из нанокомпозита (CoFeB)(SiO) и многослойных структур [(CoFeB)(SiO)]/[(CoFeB)(SiO)+O], а также квазифрактальные структуры с функциональным покрытием на основе композитов (CoFeB)(SiO) на лавсановой поверхности в диапазоне радиочастот от 1 до 10 ГГц. Показано, что в указанном радиодиапазоне частот спектр резистивного поглощения стеклотекстолита с нанесенным функциональным покрытием из нанокомпозита (CoFeB)(SiO) и многослойных структур {[(CoFeB)(SiO)]/[(CoFeB)(SiO)+O]} характеризуется широким Гауссовым пиком на частоте 5 ГГц. Квазифрактальные структуры с функциональным покрытием на основе композитов (CoFeB)(SiO) на лавсановой поверхности характеризуются суперпозицией двух Гауссовых кривых с резонансной частотой 4 ГГц и 7 ГГц, что связано со структурными особенностями пространственного распределения и фрагментацией функционального покрытия, а величина поглощения - с удельным электрическим сопротивлением гетерогенных пленок. Выявлено, что адсорбция электромагнитного излучения образцами, измеренная в геометрии экрана Солсбери, в диапазоне радиочастот 1 - 10 ГГц для стеклотекстолита с нанесенным функциональным покрытием из нанокомпозита (CoFeB)(SiO) и многослойных пленок {[(CoFeB)(SiO)]/[(CoFeB)(SiO)+O]} хорошо описывается в рамках собственного резистивного поглощения We studied absorbing properties of fiberglass samples coated with a functional coating of nanocomposite (CoFeB)(SiO) and multilayer structures [(CoFeB)(SiO)]/[(CoFeB) (SiO)+O] as well as quasi-fractal structures with a functional coating based on (CoFeB)(SiO) composites on a lavsan surface in the radio frequency range from 1 to 10 GHz. We show that in the specified radio frequency range, the resistive absorption spectrum of glass fiber with a functional coating of nanocomposite (CoFeB20)(SiO) and multilayer structures {[(CoFeB)(SiO)]/[( CoFeB)(SiO)+O]}n has a broad Gaussian peak at 5 GHz. Quasifractal structures with a functional coating based on (Co40Fe40B20)X(SiO2)100-X composites on a lavsan surface are characterized by a superposition of two Gaussian curves with a resonant frequency of 4 GHz and 7 GHz, which is associated with the structural features of the spatial distribution and fragmentation of the functional coating, and the absorption value with electrical resistivity of heterogeneous films. We found that the adsorption of electromagnetic radiation by samples, measured in the geometry of the Salisbury screen, in the frequency range of 1-10 GHz for fiberglass with a functional coating of the nanocomposite (CoFeB)(SiO) and multilayer films {[(CoFeB)(SiO)]/[(CoFeB)(SiO)+O]}n are well described in terms of intrinsic resistive absorption

Influence of oxygen and water vapor in the chamber during the deposition of thin-film nanocomposites (Co40Fe40B20)x(LiNbO3)100-x on the electrical properties of the heterogeneous system has been studied. A significant increase in the resistivity of (Co40Fe40B20)x(LiNbO3)100-x nanocomposites with an increase in the partial pressure of reactive gases (oxygen and water vapor) has been established. A significant shift of the percolation threshold towards higher metal phase concentration in the film plane and perpendicular to the film was found during the synthesis of composites with the addition of reactive gases, which is associated with an increase in the volume concentration of the dielectric phase. It is revealed that the percolation threshold when measured in the geometry perpendicular to the plane of the film corresponds to a significantly lower concentration of atoms of the Co40Fe40B20 alloy than in the case of measurements in the plane of the film, which is associated with the elongated shape of the metallic granules in the direction of film growth and the effects of Coulomb blockade suppression by a high transverse electric field.