The topological features of the formation of (Co40Fe40B20)15(LiNbO3)85 composite films deposited by ion-beam method on a metal electrode Cr/Cu/Cr has been investigated. The presence of a dielectric layer between the upper Cr layer and the CoFe–LiNbO3 film with a thickness of dox ≈ 15 nm has been established. The difference in the size of granules near the amorphous layer and in the volume of the film has been shown. A model of the formation of (Co40Fe40B20)x (LiNbO3)100 – x nanocomposite film at the initial stage of growth has been proposed. It has been shown that the formation of α-LiNbO3 layer on the chrome metal film surface is possible with the realization of island and layer-by-layer growth mechanisms for various phases of the composite.

The topological features of the formation of (Co40Fe40B20)15(LiNbO3)85 composite films deposited by ion-beam method on a metal electrode Cr/Cu/Cr has been investigated. The presence of a dielectric layer between the upper Cr layer and the CoFe–LiNbO3 film with a thickness of dox ~ 15 nm has been established. The difference in the size of granules near the amorphous layer and in the volume of the film has been shown. A model of the formation of (Co40Fe40B20)x(LiNbO3)100–x nanocomposite film at the initial stage of growth has been proposed. It has been shown that the formation of α–LiNbO3 layer on the chrome metal film surface is possible with the realization of island and layer-by-layer growth mechanisms for various phases of the composite.

The topological features of the formation of (Co40Fe40B20)15(LiNbO3)85 composite films deposited by ion-beam method on a metal electrode Cr/Cu/Cr has been investigated. The presence of a dielectric layer between the upper Cr layer and the CoFe-LiNbO3 film with a thickness of dox~ 15 nm has been established. The difference in the size of granules near the amorphous layer and in the volume of the film has been shown. A model of the formation of (Co40Fe40B20)x(LiNbO3)100-x nanocomposite film at the initial stage of growth has been proposed. It has been shown that the formation of α-LiNbO3 layer on the chrome metal film surface is possible with the realization of island and layer-by-layer growth mechanisms for various phases of the composite. Keywords: nanocomposite, growth mechanisms, self-organization, structure.

Исследованы поглощающие свойства образцов стеклотекстолита с нанесенным функциональным покрытием из нанокомпозита (CoFeB)(SiO) и многослойных структур [(CoFeB)(SiO)]/[(CoFeB)(SiO)+O], а также квазифрактальные структуры с функциональным покрытием на основе композитов (CoFeB)(SiO) на лавсановой поверхности в диапазоне радиочастот от 1 до 10 ГГц. Показано, что в указанном радиодиапазоне частот спектр резистивного поглощения стеклотекстолита с нанесенным функциональным покрытием из нанокомпозита (CoFeB)(SiO) и многослойных структур {[(CoFeB)(SiO)]/[(CoFeB)(SiO)+O]} характеризуется широким Гауссовым пиком на частоте 5 ГГц. Квазифрактальные структуры с функциональным покрытием на основе композитов (CoFeB)(SiO) на лавсановой поверхности характеризуются суперпозицией двух Гауссовых кривых с резонансной частотой 4 ГГц и 7 ГГц, что связано со структурными особенностями пространственного распределения и фрагментацией функционального покрытия, а величина поглощения - с удельным электрическим сопротивлением гетерогенных пленок. Выявлено, что адсорбция электромагнитного излучения образцами, измеренная в геометрии экрана Солсбери, в диапазоне радиочастот 1 - 10 ГГц для стеклотекстолита с нанесенным функциональным покрытием из нанокомпозита (CoFeB)(SiO) и многослойных пленок {[(CoFeB)(SiO)]/[(CoFeB)(SiO)+O]} хорошо описывается в рамках собственного резистивного поглощения We studied absorbing properties of fiberglass samples coated with a functional coating of nanocomposite (CoFeB)(SiO) and multilayer structures [(CoFeB)(SiO)]/[(CoFeB) (SiO)+O] as well as quasi-fractal structures with a functional coating based on (CoFeB)(SiO) composites on a lavsan surface in the radio frequency range from 1 to 10 GHz. We show that in the specified radio frequency range, the resistive absorption spectrum of glass fiber with a functional coating of nanocomposite (CoFeB20)(SiO) and multilayer structures {[(CoFeB)(SiO)]/[( CoFeB)(SiO)+O]}n has a broad Gaussian peak at 5 GHz. Quasifractal structures with a functional coating based on (Co40Fe40B20)X(SiO2)100-X composites on a lavsan surface are characterized by a superposition of two Gaussian curves with a resonant frequency of 4 GHz and 7 GHz, which is associated with the structural features of the spatial distribution and fragmentation of the functional coating, and the absorption value with electrical resistivity of heterogeneous films. We found that the adsorption of electromagnetic radiation by samples, measured in the geometry of the Salisbury screen, in the frequency range of 1-10 GHz for fiberglass with a functional coating of the nanocomposite (CoFeB)(SiO) and multilayer films {[(CoFeB)(SiO)]/[(CoFeB)(SiO)+O]}n are well described in terms of intrinsic resistive absorption

AbstractThin Zr-stabilized SnO_2 films are fabricated by ion-beam reactive sputtering. The amorphous thin-film SnO_2 samples with various Zr concentrations are synthesized in a single production process. The influence of heat treatment on the structure and electrical properties of the synthesized films is studied. The onset of crystallization in thin-film Sn–Zr–O systems is observed at 673 and 773 K, which is accompanied by the appearance of metastable phases. Being heated to 873 K, these phases are transformed into Sn + Sn_2O_3. It is found that the electrotransfer the film crystallization at temperatures close to room temperature is thermally activated with an activation energy of ~0.78 eV. Tin-oxide films doped with Zr from 0.6 to 3.9 at % manifest the property of hydrogen-gas sensitivity after crystallization.

Thin Zr-stabilized SnO2 films are fabricated by ion-beam reactive sputtering. The amorphous thin-film SnO2 samples with various Zr concentrations are synthesized in a single production process. The influence of heat treatment on the structure and electrical properties of the synthesized films is studied. The onset of crystallization in thin-film Sn–Zr–O systems is observed at 673 and 773 K, which is accompanied by the appearance of metastable phases. Being heated to 873 K, these phases are transformed into Sn + Sn2O3. It is found that the electrotransfer the film crystallization at temperatures close to room temperature is thermally activated with an activation energy of ~0.78 eV. Tin-oxide films doped with Zr from 0.6 to 3.9 at % manifest the property of hydrogen-gas sensitivity after crystallization.

Thin indium oxide films and In–Y–O films containing 0.7 to 3.6 at % Y have been grown by ionbeam sputtering of an indium target and a composite (indium + weighed amounts of yttrium) target in a mixture of argon and oxygen. The thin indium oxide films have a cubic crystal structure (sp. gr. Ia\(\bar 3\)). The incorporation of yttrium atoms into indium oxide leads to the formation of an amorphous structure in the as-grown films and an increase in their room-temperature electrical resistance by several orders of magnitude. Lowtemperature electrical resistance data indicate a change in conduction mechanism. High-temperature heat treatment of the thin In–Y–O films leads to the crystallization of their amorphous structure and an increase in their electrical resistance.

Experimental data on the structure, electrical and gas sensor properties of Sn-Y-O thin films with Y content from 0.4 to 4.8 at % are presented. The films have been prepared by reactive ion-beam deposition in argon atmosphere with oxygen addition. Composite target used in deposition procedure represents a tin plate with yttrium strips unevenly arranged on the plate surface. Such a target configuration allowed one to obtain 75 samples with yttrium concentration 0.4 to 4.8 at.% in one deposition cycle. The structure of the Sn-Y-O films in the initial state is amorphous. The crystallization process in the system studied is observed at temperatures of 400 - 500 degrees C, and it begins with the formation of metastable SnO precipitates. The start temperature of the crystallization process increases with increasing of the Y content. Further increase of the temperature leads to a transformation of a part of the SnO phase into SnO2 and formation of crystalline Y2O3. The studies of electrical properties of the Sn-Y-O thin films in the initial state show that electrical resistivity measured at room temperature is higher than 10(10) Ohm . cm and decreases with an increase of temperature. After heat treatment, leading to crystallization of Sn-Y-O thin films, electrotransport process at room temperatures is thermally activated with an activation energy about 0.23 eV. After crystallization the Sn-Y-O films show hydrogen gas-sensitivity properties. Particularly, the injection of hydrogen into argon at 350 degrees C leads to a more than 60 % decrease of electrical resistance for Sn-Y-O nanocrystalline thin film with Y concentration of 4.8 at. %.