The results of studying SiO2 films implanted with 64Zn+ ions with a dose of 5 × 1016 cm–2 at energies of 20 and 120 keV and isochronously oxidized for 1 h at temperatures from 400 to 800°C with a step of 100°C are presented. The profiles of Zn and its oxide are studied using Rutherford backscattering and time-of-flight secondary-ion mass spectrometry. The chemical state of zinc and the phase composition of the film are determined by Auger electron spectroscopy and Raman scattering. It is found that after implantation, the zinc distribution has two maxima at depths of 20 and 85 nm, and after annealing at 700°C there is a broadened maximum at a depth of 45 nm. After implantation, a mixture of Zn and ZnO phases is formed in the sample. After annealing at 700°C, only the ZnO phase is formed in the sample, the distribution profile of which has a broadened peak at 45 nm.

The results of studying SiO2 films implanted with 64Zn ions with a dose of 5 × 1016 cm–2 at energies of 20 and 120 keV and isochronously oxidized for 1 h at temperatures from 400 to 800°C with a step of 100°C are presented. The profiles of Zn and its oxide were studied using Rutherford backscattering and time-of-flight secondary ion mass spectrometry. The chemical state of zinc and the phase composition of the film were determined by Auger electron spectroscopy and Raman scattering. It was found that after implantation, the zinc distribution had two maxima at depths of 20 and 85 nm, and after annealing at 700°C there was a broadened maximum at a depth of 45 nm. After implantation, a mixture of Zn and ZnO phases was formed in the sample. After annealing at 700°C, only the ZnO phase was formed in the sample, the distribution profile of which had a broadened peak at 45 nm.

The results of the synthesis and study of Zn-containing clusters at the interface of a Si3N4/Si film implanted with 64Zn+ ions with a dose of 5 × 1016 cm–2 and an energy of 40 keV are presented. A Si3N4 film is preliminarily deposited onto a silicon substrate using the CVD-method. Then, the implanted samples of 10 × 10 mm are annealed in an oxidizing atmosphere (in air) with a step of 100°С for 1 h at each step in the temperature range from 400 to 800°С. The Rutherford backscattering method is used to study the profiles of zinc during annealing. The structure and composition of the film are studied using scanning electron microscopy in combination with energy-dispersive spectroscopy, as well as photoluminescence. After implantation, individual clusters of metallic zinc with a size of about 100 nm or less are recorded near the surface of the Si3N4 film. It is established that, during annealing, Zn clusters grow in the sample and the phase of metallic Zn gradually transforms into phases of its oxide ZnO and then, presumably, silicide Zn2SiO4. After annealing at a temperature of 700°С, which is the most optimal for obtaining the ZnO phase, zinc-oxide clusters with a size of about 100 nm are formed in the Si3N4 film. A peak appears in the photoluminescence spectrum at a wavelength of 370 nm due to exciton luminescence in zinc oxide. After annealing at 800°C, the ZnO phase degrades and, presumably, the zinc-silicide phase Zn2SiO4 is formed.

We present the results of the synthesis of nanoclusters of metallic zinc and its oxide in crystalline quartz implanted with 64Zn+ ions with a dose of 5 × 1016 cm–2 and energy of 40 keV and annealed in oxygen at 400–900°C. Scanning electron microscopy combined with energy-dispersive spectroscopy, Rutherford backscattering spectroscopy and photoluminescence are used for the study. After implantation, separate nanoclusters of metallic zinc with a size of less than 1 μm are detected on the surface and in the surface layer of quartz. During annealing, metallic zinc passes to the phases of its oxide ZnO and silicate Zn2SiO4. After annealing at 700°C (optimal for obtaining the ZnO phase), zinc-oxide nanoclusters smaller than 500 nm are formed in the quartz surface layer. The photoluminescence spectrum exhibits a doublet peak at a wavelength of 370 nm, which is due to exciton luminescence in zinc oxide. After annealing at 800°C, the ZnO phase degrades, and the zinc silicate Zn2SiO4 phase is formed.

Nanoclusters of metals and metal-oxide compounds in various solid-state matrices can find application in promising microelectronic devices. The results of studying memristors based on silicon-oxide films implanted with 64Zn+ ions (dose of 3 × 1016 cm–2 and energy of 40 keV) at room temperature and annealed at temperatures from 400 to 800°C in an oxidizing environment are presented. The concentration profiles of implanted zinc, as well as matrix elements, silicon and oxygen, are obtained via the Rutherford backscattering spectroscopy of He+ ions with an energy of 2 MeV. The surface topology is investigated using a scanning probe microscope in the atomic-force-microscopy mode and Kelvin mode. After implantation, sample-surface smoothing occurs due to sputtering. Further, during thermal annealing, the surface roughness increases and broadening of the roughness distribution is observed in comparison with the implanted sample. The images of the surface potential obtained in the Kelvin mode differ in terms of the sign of the signal: positive, for the initial sample, and negative, for the sample annealed at 800°C. The phase composition of the films is studied using X-ray diffraction analysis in the grazing geometry. It is found that crystalline phase of Zn was formed in the SiO2 film after implantation. After annealing at 800°C, the Zn phase is mainly transformed into the zinc silicide (willemite) Zn2SiO4 phase and partially into the ZnO phase. The analysis of small peaks in the diffraction patterns carried out using the EVA program indicates that the β-Zn2SiO4 and Zn1.95SiO4 phases are formed in the samples.

The surface layer of a SiO2/Si structure implanted with Zn+ and O+ ions and annealed in neutral and inert atmospheres is studied. At first, n-Si(100) silicon plates are oxidized in dry O2 to achieve an oxide-film thickness of 0.2 μm. Then, at room temperature, they are sequentially implanted with a dose of 5 × 1016 cm–2 of 70-keV 64Zn+ ions and with a dose of 6.1 × 1016 cm–2 of 40-keV $$^{{16}}{\text{O}}_{2}^{ + }$$ ions. Plate overheating, compared with room temperature, does not exceed 70°C. The samples are isochronously annealed for 1 h in N2 at a temperature from 400 to 600°C and then in Ar in the range of 700–1000°C with a step of 100°C. After implantation, the crystalline phase Zn(102) is found to form in the SiO2 film. After annealing at 700°C, Zn is oxidized to form the ZnO phase. Analysis of the diffraction patterns shows the β-Zn2SiO4 and Zn1.95SiO4 phases to be additionally formed in the samples after annealing at 800°C. After annealing at 900°C and above, the ZnO phase was not detected in the samples.

The formation of a zinc-oxide phase in a SiO 2 film deposited onto n -type Si substrates grown in the (100) orientation using the Czochralski technique, which is a result of implanting 64 Zn + ions at room temperature, an energy of 50 keV, and a dose of 5 × 10 16 cm –2 , and subsequent heat treatment in an oxygen atmosphere at elevated temperatures, is studied. The surface topology is investigated using methods of scanning electron and atomic force microscopy. The optical properties are studied using the method of photoluminescence spectroscopy at 10 K and by measuring the light reflection spectra. After Zn implantation, a ZnO phase is detected in the subsurface layer of the SiO 2 film. After low-temperature annealing in the range of 400–600°С, Zn-containing precipitates with a cross-sectional size of particles of 20–50 nm are found in the sample and on its surface. After annealing at 700–800°C, Zn-containing precipitates of the Zn·ZnO complex are formed in the subsurface layer, and a phase of the ZnO · Zn 2 SiO 4 complex is found after annealing at temperatures of 900–1000°C. The samples obtained at the annealing temperature optimal for the formation of the ZnO phase (about 700°C) are irradiated with 132 Xe 26+ ions with an energy of 167 MeV. The ZnO phase is found to disappear after irradiation at a fluence of 2 × 10 13 cm –2 and a large number of radiation-induced defects giving a characteristic photoluminescence band are formed. With an increase in the Xe fluence to 5 × 10 14 cm –2 , the intensity of this luminescence band increases.

The effect irradiation with swift heavy Xe ions at an energy of 167 MeV has on the structure and properties of a Zn-implanted SiO 2 film is studied. The implantation of Zn ions is found to result in the formation of amorphous zinc nanoparticles around 10 nm in size at a depth near the projective range of zinc ions ( Rp ≈ 40 nm) in the SiO 2 film. Xe irradiation of the film dampens the exciton recombination–induced peak in the photoluminescence spectrum at a wavelength of 370 nm. It also raises the peak at 430 nm, which is associated with radiation defects. Bombarding the surface of the SiO 2 film with Хе ions results in the formation of surface craters surrounded by hillocks, and the emergence of Zn-containing nanoparticles.

The presented results characterize nanoparticle formation in n-Si(100) samples implanted with 50-keV 64Zn+ ions (the dose is 5 × 1016 cm‒2) at room temperature followed by heat treatment in an oxygen or nitrogen atmosphere at temperatures of 400–900°C. Defects and zinc concentration profiles are investigated via the Rutherford backscattering spectroscopy with the help of the channeling technique, in which 1.7-MeV He+ ions are scattered at an angle of 110°. The silicon surface layer is visualized using a transmission electron microscope equipped with an energy-dispersive microanalyzer. The surface topology of the implanted and annealed samples is studied via atomic-force microscopy. The implantation process is accompanied by the formation of a 150-nm-thick amorphous Si surface layer containing Zn nanoparticles with an average size of 4 nm, below which a radiation-damaged layer 50 nm thick is generated. After 800°C annealing in an oxygen atmosphere, a recrystallized single-crystal silicon layer with a complex ZnO/Zn2SiO4 phase is formed. After 800°C annealing in a nitrogen atmosphere, a recrystallized polycrystalline Si layer involving Zn nanoparticles is created.

The results from visualizing the structure and identifying the composition of surface and the nearsurface layers of CZ n-Si (100) implanted by 64Zn+ ions with dose of 5 × 1016 cm–2 and energy of 50 keV under conditions of a substrate heated to 350°C are presented. It is found that there is no Si amorphization after Zn implantation, and only one layer 200 nm thick forms and is damaged because of radiation-induced defects. Zn nanoparticles 10–100 nm in size are found on a sample’s surface and in its near-surface layer. Computer analysis and mapping of the elemental and phase composition of FIB crater walls and the surface show that the main elements (54%) in the sample near-surface layer are Si, O, and Zn. The presence of ZnO phase is recorded to a depth of 20 nm in the sample.

The paper presents the development of experimental investigations and recent results of the impact on tungsten at high level of radiation damage under steady-state deuterium plasma. Tungsten is considered as a plasma facing material for a fusion reactor. The effect of fusion neutron impact is simulated by surrogate irradiations with high-energy ions. The primary defects at 1-100 dpa were produced in tungsten samples by He and C ions accelerated in the Kurchatov cyclotron to 3-10 MeV at the total fluence of 1017-1019 cm-2. The irradiated material was studied in deuterium plasma on the LENTA linear divertor simulator at the plasma fluence 1021-1022 D/cm2. Erosion dynamics, development of the surface microstructure and deuterium retention were analyzed. Increased deuterium retention detected previously in tungsten pre-irradiated by He ions was also registered (ERDA) on C-irradiated samples at 2-3 dpa. In contrast, a significant decrease in the D uptake has been observed on those samples operated in the experiments at 500°C.

Представлены результаты исследования структуры и состава приповерхностного слоя пластин Si после имплантации ионов 64Zn+ и термических отжигов в кислороде. Имплантация проводилась в подогретую до температуры 400°C подложку. Радиационные дефекты и профили имплантированного цинка и продиффундировавшего в подложку кислорода исследовались методом резерфордовского обратного рассеяния ионов He+ с энергией 1.7 МэВ с использованием техники каналирования. Визуализация имплантированных слоев проводилась с помощью просвечивающей электронной микроскопии высокого разрешения в сочетании с дифракцией электронов и энергодисперсионным микроанализом. Для исследования морфологии поверхности применялась атомно-силовая микроскопия.

The results of studying the structure and composition of the surface layer of a Si plate after 64Zn+ ion implantation and thermal annealing in oxygen are presented. The ions are implanted into a substrate heated to a temperature of 400°C. Radiation defects and profiles of implanted Zn and oxygen diffused into the substrate are studied by means of 1.7-MeV He+-ion Rutherford backscattering spectroscopy using the channeling technique. The implanted layers are visualized using high-resolution transmission electron microscopy in combination with electron diffraction and energy dispersive microanalysis. Atomic-force microscopy is used to study the surface morphology.

Методом просвечивающей электронной микроскопии высокого разрешения проведена визуализация поперечного сечения приповерхностного слоя кремния, имплантированного ионами 64Zn+ и 16О+, и изучена его эволюция в результате термических отжигов. Проанализированы профили распределения имплантированных примесей в этом слое, полученные с помощью вторично-ионной масс-спектрометрии, и их изменение под действием термообработки. Морфология поверхности образцов изучена с помощью атомно-силовой микроскопии.

The cross section of a Si surface layer implanted with 64Zn+ and 16O+ ions is visualized via high-resolution transmission electron microscopy, and its evolution as a result of thermal annealing is investigated. The profiles of impurities implanted into this layer, which are measured by means of secondary-ion mass spectrometry, as well as their changes arising from heat treatment, are analyzed. The surface morphology is examined with the help of atomic-force microscopy.