Synthetic intergeneric amphydiploids and genome-substituted wheat forms are an important source for transferring agronomically valuable genes from wild species into the common wheat (Triticum aestivum L.) genome. They can be used both in academic research and for breeding purposes as an original material for developing wheat-alien addition and substitution lines followed by translocation induction with the aid of irradiation or nonhomologous chromosome pairing. The chromosome sets and genome constitutions of allopolyploids are usually verified in early hybrid generations, whereas the subsequent fate of these hybrids remains unknown in most cases. Here we analyze karyotypes of five hexa- (2n = 6x = 42) and octoploid (2n = 8x = 56) amphydiploids of wheat with several species of the Aegilops, Haynaldia, and Hordeum genera, and six genome-substituted wheat-Aegilops forms, which were developed over 40 years ago and have been maintained in different gene banks. The analyses involve C-banding and fluorescence in situ hybridization (FISH) with pAs1 and pSc119.2 probes. We have found that most accessions are cytologically stable except for Avrodes (genome BBAASS, a hexaploid genome-substituted hybrid of wheat and Aegilops speltoides), which segregated with respect to chromosome composition after numerous reproductions. Chromosome analysis has not confirmed the presence of the N genome from Ae. uniaristata Vis. in the genome-substituted hybrid Avrotata. Instead, Avrotata carries the D genome. Our study shows that octoploid hybrids, namely AD 7, AD 7147 undergo more complex genome reorganizations as compared to hexaploids: the chromosome number of two presumably octoploid wheat-Aegilops hybrids were reduced to the hexaploid level. Genomes of both forms lost seven chromosome pairs, which represented seven homoeologous groups and derived from different parental subgenomes. Thus, each of the resulting hexaploids carries a synthetic/hybrid genome consisting of a unique combination of chromosomes belonging to different parental subgenomes.

The results of the synthesis and study of Zn-containing clusters at the interface of a Si3N4/Si film implanted with 64Zn+ ions with a dose of 5 × 1016 cm–2 and an energy of 40 keV are presented. A Si3N4 film is preliminarily deposited onto a silicon substrate using the CVD-method. Then, the implanted samples of 10 × 10 mm are annealed in an oxidizing atmosphere (in air) with a step of 100°С for 1 h at each step in the temperature range from 400 to 800°С. The Rutherford backscattering method is used to study the profiles of zinc during annealing. The structure and composition of the film are studied using scanning electron microscopy in combination with energy-dispersive spectroscopy, as well as photoluminescence. After implantation, individual clusters of metallic zinc with a size of about 100 nm or less are recorded near the surface of the Si3N4 film. It is established that, during annealing, Zn clusters grow in the sample and the phase of metallic Zn gradually transforms into phases of its oxide ZnO and then, presumably, silicide Zn2SiO4. After annealing at a temperature of 700°С, which is the most optimal for obtaining the ZnO phase, zinc-oxide clusters with a size of about 100 nm are formed in the Si3N4 film. A peak appears in the photoluminescence spectrum at a wavelength of 370 nm due to exciton luminescence in zinc oxide. After annealing at 800°C, the ZnO phase degrades and, presumably, the zinc-silicide phase Zn2SiO4 is formed.

The regularities of the influence of initial substrate orientation and annealing conditions on the intensity and temperature dependence of the D1 luminescence line for the p-type silicon samples implanted with silicon ions followed by subsequent annealing are studied. It is shown that the luminescent properties of the samples depend both on surface orientation and on annealing temperature. For a silicon sample with (111) surface orientation, under certain heat treatment conditions, an anomalous temperature dependence of the D1 line intensity is demonstrated with the appearance of a second maximum in this dependence at temperatures of about 80 K.

We present the results of the synthesis of nanoclusters of metallic zinc and its oxide in crystalline quartz implanted with 64Zn+ ions with a dose of 5 × 1016 cm–2 and energy of 40 keV and annealed in oxygen at 400–900°C. Scanning electron microscopy combined with energy-dispersive spectroscopy, Rutherford backscattering spectroscopy and photoluminescence are used for the study. After implantation, separate nanoclusters of metallic zinc with a size of less than 1 μm are detected on the surface and in the surface layer of quartz. During annealing, metallic zinc passes to the phases of its oxide ZnO and silicate Zn2SiO4. After annealing at 700°C (optimal for obtaining the ZnO phase), zinc-oxide nanoclusters smaller than 500 nm are formed in the quartz surface layer. The photoluminescence spectrum exhibits a doublet peak at a wavelength of 370 nm, which is due to exciton luminescence in zinc oxide. After annealing at 800°C, the ZnO phase degrades, and the zinc silicate Zn2SiO4 phase is formed.

Comparative analysis of the structure and mechanical properties of welded joints of large-diameter pipes with wall thickness 30 mm produced commercially by submerged arc welding and by combination of the latter with hybrid laser-arc welding is performed. The results of impact tests and the data of fractographic studies are used to infer that that the combined welding process is more advantageous.

Проведен сравнительный анализ структуры и механических свойств сварных соединений труб большого диаметра с толщиной стенки 30 мм, изготовленных в заводских условиях с применением дуговой сварки под слоем флюса, а также при комбинации дуговой и гибридной лазерно-дуговой сварки. По результатам ударных испытаний и данным фрактографических исследований выявлено преимущество комбинированной технологии сварки.

The weld joints of pipes with a diameter of 1420 mm and a pipe-wall thickness of 30 mm manufactured by two different technologies have been studied. These technologies were (i) combining the laser arc welding when making a root weld with the subsequent submerged arc welding when applying cap welds and (ii) the method of double-sided submerged arc welding. It has been shown that the first technology leads to the formation of a bainite-based disperse structure in weld joints, thereby providing a tough-ductile character of fracture and an increased level of impact strength for different positions of a notch with respect to the center of a weld joint.

Nanoparticle formation in silicon subsequently doped with Zn and О ions and annealed in vacuum is presented in this paper. Standard n-type Si plates with the (100) orientation, a thickness of 380 nm, and a diameter of 76 mm and grown by the Czochralski method are implanted with 64Zn+ ions with a dose of 5 × 1016 cm–2 and an energy of 50 keV and with 16О+ ions with a dose of 2 × 1017 cm–2 and an energy of 20 keV. The ion current does not exceed 0.5 µA/cm2 during implantation so that plate overheating in comparison to room temperature does not exceed 50°С. Then the plates were cut into samples with dimensions of 10 × 10 mm and annealed at a temperature of 400 to 900°С with a step of 100°С in vacuum for 30 min. It is discovered that, after implantation, an amorphized layer with a thickness of approximately 150 nm is formed in Si; amorphous Zn and O nanoparticles with dimensions of about 5 nm are formed in it. Radiation-induced defects are annealed during heat treatment, and the amorphized-layer thickness decreases. After annealing, a peak at a wavelength of 370 nm forms at 700°С in the photoluminescence spectrum; it is caused by the formation of ZnO-phase nanoparticles. This peak vanishes after annealing at 900°С, and a peak at a wavelength of 425 nm appears in the photoluminescence spectrum; it is due to the appearance of the Zn2SiO4 phase.

The polymorphism of hordeins controlled by the Hrd A , Hrd B , and Hrd F loci in 259 varieties of spring barley approved for use in the Russian Federation was studied by electrophoresis in starch gel. For locus Hrd A , 21 alleles were identified; for locus Hrd B , 34 alleles; and for locus Hrd F , 4 alleles. The allele frequencies of these loci varied in the range of 0.4807–0.0039 ( Hrd A ), 0.2394–0.0039 ( Hrd B ), and 0.4633–0.0058 ( Hrd F ). The polymorphism found at the Hrd loсus theoretically allows differentiating 2856 genotypes. The studied varieties by genotypes of hordein-coding loci were distributed in 113 groups including from 1 to 31 varieties. The largest number of groups (77–68.15%) included one variety. These varieties were unique in terms of Hrd locus genotypes. Another 18 groups (15.94%) included two varieties each with identical electrophoregrams of hordein. Groups including 27 and 31 varieties with the same genetic formulas of hordein were found. The use of additional genetic markers—SSR markers and water-soluble grain proteins for differentiation and identification of barley varieties that are identical in hordeins—is discussed. The results of using electrophoretic analysis of hordein in laboratory varietal control of malting barley from 2005 to 2019 are presented. The trend of increasing lots with high varietal purity (more than 95%) from 27% in 2005 to 62–65% in 2016–2019 is shown. At the same time, over the past 5 years, the share of batches of malting barley that do not correspond to the declared varieties has decreased from 14.7% in 2015 to 4.2–4.6% in 2018 and 2019 respectively.

The Czochralski growth Si (100) substrates were implantation by 64Zn+ ions with dose of 5×10^16 cm−2 and energy of 50 keV and then by the 16O+ ions with dose of 2×10^17 cm−2 and energy of 20 keV. During implantation the substrate temperature was about 350◦C. Then, the substrates were cut into 10×10mm samples, and were subjected to isochronous (for 20min) photonic annealing in vacuum. At each stage of photon annealing, the effective temperature was varied from 500 up to 900◦C with a step of 100◦C. After implantation the radiation-induced point defects and their clusters are formed in the subsurface layer, twin grains, dislocations, as well as Zn-containing clusters (mainly of Zn and ZnO composition) with an average size of 10−20nm and an average size of 20−50 nm on Si substrate surface. As the annealing proceeds, the radiation defects gradually disappear, and after annealing at an effective temperature of 700◦C the Zn-containing clusters (presumably consisted of ZnO phase and particularly of Zn2SiO4 phase) with a size of about 100 nm are revealed in the surface layer and on the Si substrate surface.

The results of the synthesis of metallic zinc nanoparticles (NPs) and its oxide in amorphous quartz, implanted with 64Zn+ ions with an energy of 50 keV and a dose of 5 × 1016/cm2, and isochronously annealed in oxygen with a step of 100°C for 1 hour at each step in the temperature range of 400−900°C, are presented. For the study we use the methods of electron scanning and transmission microscopy in combination with energy-dispersive spectroscopy and electron diffraction, as well as atomic-force microscopy, optical transmission and photoluminescence. It is found that after implantation, a few Zn-containing NPs with a size of less than 100 nm are recorded on the quartz surface, and metal Zn NPs with a size of about 3 nm are recorded inside the sample body. It is established that during annealing, the implanted sample becomes more transparent as a constant transition from the opaque phase of metallic Zn to the transparent phases of its oxide and silicide occurs. After annealing at 700°C, the quartz surface becomes very developed and numerous Zn-containing NPs and craters are recorded on it; zinc-oxide nanoparticles with a size of 4.5 nm are formed in the sample body. In this case, a photoluminescence peak in the form of a doublet at a wavelength of 370 nm, caused by the ZnO phase, is formed on the spectrum. After annealing at 900°C, the zinc-oxide phase degrades and a willemite phase of Zn2SiO4 is formed.

The fine structure of low-carbon low-alloy pipe steel after controlled thermomechanical processing and subsequent austenitization at 980°C is studied in this work using scanning and transmission electron microscopy methods. The evolution of austenite decomposition products with an increase in the cooling rate from the austenitic region from 35 to 500 deg/s is described. The martensitic-austenitic component is revealed and identified in the structure of steel based on quasi-polygonal bainite.

Czochralski-grown Si substrates (n-type, orientation (100)) are subjected to double implantation, notably, initially by 64Zn+ ions with a dose of 5 × 1016 cm–2 and an energy of 50 keV and then with 16O+ ions with a dose of 2 × 1017 cm–2 and an energy of 20 keV. The substrates during implantation are held at ~350°C. The implanted Si substrates contain radiation-induced defects and their clusters such as twins, dislocations, and nanoclusters, notably, Zn-containing nanoclusters with an average radius of 10–50 nm predominantly consisting of the metallic Zn phase and partially from the ZnO phase formed on the surface and in the substrate near-surface layer. Photonic annealing to an effective temperature of 700°C optimal for the formation of the ZnO phase leads to the annealing of radiation-induced defects, and Zn-containing nanoclusters presumably consisting of the ZnO phase and partially of the Zn2SiO4 phase with an average diameter of 50–100 nm are recorded on the sample surface.

The change in the structure of welds made with a new welding wire and subjected to high-velocity impact was investigated by optical and scanning electron microscopy and X-ray diffraction analysis. It is shown that after welding, a structure consisting of martensite, $$\delta$$-ferrite, and metastable austenite is formed in the weld metal. The subsequent severe impact leads to hardening of the weld metal due to the transformation of metastable austenite to strain-induced martensite. Kinetic microindentation of the weld was performed.

Abstract—Special misorientations between the bainite crystals in a high-carbon manganese–silicon steel, which were obtained during isothermal γ → α transformation at 300°C, have been studied using EBSD-based orientation microscopy. Sets of special boundaries have been compared with theoretical calculations of possible angles and axes of rotation of α crystals arising in the initial γ phase as a consequence of three types of orientation relationships: Kurdjumov–Sachs, Nishiyama–Wasserman, and intermediate. It has been shown that the special misorientations of α crystals taking into account the Brandon criterion correspond to Nishiyama–Wasserman and Kurdjumov–Sachs orientation relationships.