Presented below are the results of the measurements of temperature of simulators of front-end electronic boards (62 pcs), heat sinks for electronic units, housing of the ROC chamber, and the pad plane of the TPC detector for the MPD facility to be operated at the NICA collider. The measurements were conducted for two coolant temperatures. Data of computer simulations, which are in good agreement with the measurements, are also presented. The results reported will be used to develop and optimize cooling and thermal stabilization systems for ROC chambers and front-end electronics.

The aim of the work is analyzing the results of an experimental research of a charge-sensitive amplifier with an adjustable conversion coefficient and a base level recovery circuit fabricated on the master slice array MN2XA030 for silicon photomultiplier tubes. The amplifier is called ADPreampl3. The parameters were measured on a small batch of chips in the amount of 20 samples. In the process of measuring the main parameters of the amplifier, the signal from the SiPM Photonique equivalent circuit was fed to the amplifier input. In the course of measuring the parameters, it was revealed that the spread of the baseline level for the FOut output ranged from -24 to 276 mV with an average value of 85.6 mV. In this case, a voltage changing in the FOoutShift node from -3 to 3 V is sufficient to establish a base level value of FOut output close to zero. When the recovery scheme is disabled, the spread of the basic level for OutA output is from 300 to 800 mV. When the OutAShift output is connected to the zero-voltage bus the average base level for OutA output is 3.72 mV and for OutAinv output it is minus 2.42 mV. The base level at the outputs OutA and OutAinv smoothly changes in the range of ± 0.9 V. At maximum gain, the dynamic range of ADPreampl3 exceeds 20 dB, however, at the same time, the conversion coefficient depends on the value of the input charge. To register large input charges, it is recommended to reduce the output pulse by reducing the voltage at the Gain pin or process the signal from the FOut pin. The output parameters of the experimental samples are compared with the results of computer simulation. The discrepancy between the results of modeling and measurements, peak time and propagation delays of the amplifier signal was revealed. Based on this, a decision to adjust the SPICE parameters of the elements used in the simulation was made.

The design of a new configurable structured array (CSA) is considered. The CSA is intended for development of multichannel (up to eight channels) integrated circuits of the analog interfaces of sensors. An example of operational amplifier is used to show that circuit synthesis with allowance for radiation-induced variations in characteristics of complementary bipolar transistors may provide minor degradation of parameters of the analog ICs after ionizing irradiation. Electrical schemes of the CSA analog components and experimentally measured parameters are presented.

A two-channel configured analog microcircuit, intended for applications in optoelectronic devices of space equipment, is created on complementary bipolar transistors. The different combination of microcircuit pins and connection of external RC -elements allow one to create several analog units with specified values of the conversion coefficient of the input signal, bandwidth, rate of rise, and consumed current. The maximal gain of the microcircuit with an open negative feedback loop exceeds 75 dB, and the bandwidth at the 20-fold gain is more than 19.4 MHz. The circuit designs of separate stages of the microcircuit and experimental characteristics are given.

An ABMK-1.3 analog array chip for the high-precision detection of arrival times of signals in the wide frequency range in nuclear electronics is created. The chip contains a high-speed comparator with a built-in hysteresis and low-pass filter (LPF). The propagation delay of the comparator signal does not exceed 1.25 ns, and the hysteresis of the transfer characteristic can be regulated from 40 to 200 mV. The bandwidth of the LPF is below 130 kHz. The circuit design of separate stages of the chip and experimental characteristics are given.

An integral microcircuit (IC) for processing of photosignals of a ring laser, which is a sensitive element of a unit of laser gyroscopes, is created on an ABMK-1.3 analog array. The IC contains the current-to-voltage converter, a low-pass filter (LPF), and bandpass filter (BPF). The input current-output voltage conversion coefficient ( K IU ) and transmission band at a level of −3 dB (Δ f −3 dB ) LPF and BPF are controlled by varying ratings of external RC elements. Type LPF parameters K IU = 0.2 V/μA and Δ f −3 dB = 0–15 Hz, and those of the BPF K IU = 1.2 V/μA and Δ f −3 dB = 15 Hz-1.6 MHz. Circuit designs of separate cascades of the microcircuit and experimental characteristics are presented.

На аналоговом базовом матричном кристалле АБМК-1.3 создана интегральная микросхема (ИС) для обработки фотосигналов кольцевого лазера, являющегося чувствительным элементом блока лазерных гироскопов. ИС содержит преобразователь ток–напряжение, фильтр нижних частот (ФНЧ) и полосовой фильтр (ПФ). Коэффициент преобразования входной ток – выходное напряжение (KIU) и полоса пропускания по уровню –3 дБ ( f-3) ФНЧ и ПФ регулируются изменением номиналов внешних RC-элементов. Типовые параметры ФНЧ KIU = 0.2 В/мкА, f-3 = 0–15 Гц, ПФ – KIU = 1.2 В/мкА, f-3 = 15 Гц–1.6 МГц. Приводятся схемные решения отдельных каскадов микросхемы и экспериментальные характеристики.

На аналоговом базовом матричном кристалле АБМК-1.3 создана двухканальная микросхема для обработки токовых импульсов кремниевых фотоэлектронных умножителей. Каждый канал микросхемы содержит трансрезистивный усилитель с максимальным коэффициентом преобразования около 5 мВ/мкА, регулируемым в диапазоне 70 дБ, и дискриминатор c порогом, изменяемым в пределах ±500 мВ. Приводятся схемные решения отдельных каскадов микросхемы и экспериментальные характеристики.

Bias circuits, output signals and readout electronics of silicon photomultipliers are considered. Requirements to analog IC for SiPM signal preliminary processing are formulated. According to requirements the set of radiation hardened analog ICs including the comparator and transresistance amplifiers with different gain and speed is produced.