The transparency of graphene membranes for electrons with energies in the range from 5 to 50 eV has been studied with a view to using graphene as an electrode stimulating field-induced emission in microand nanoelectronic devices. The behavior of electrons reflected from a membrane was analyzed with allowance for their return under the action of a retarding electric field. Low-energy electrons were represented by photoelectrons emitted from a diamond photocathode under the action of vacuum ultraviolet radiation.
AbstractThe transparency of graphene membranes for electrons with energies in the range from 5 to 50 eV has been studied with a view to using graphene as an electrode stimulating field-induced emission in microand nanoelectronic devices. The behavior of electrons reflected from a membrane was analyzed with allowance for their return under the action of a retarding electric field. Low-energy electrons were represented by photoelectrons emitted from a diamond photocathode under the action of vacuum ultraviolet radiation.
Silicon-diamond heterostructure based field emission media with silicon microtip arrays at the heterointerface were proposed and experimentally studied. The architecture of the heterostructures is optimized for the applications as an active medium for the field emission cathodes of mobile power microwave devices.
A photoemissive “solar-blind” cell of a vacuum ultraviolet detector array for the 50–225 nm wavelength range is described. The cell is a cavity in the shape of frustum of a pyramid in a silicon wafer, the walls of which are coated by polycrystalline diamond film acting the part of a photosensitive cathode. The design of the cell allows one to manage the work of the detector in the “pass through” mode; i.e., photons fall to one side of the wafer, and photoelectrons release from its opposite side. Estimation of photosensitivity of the cell gives a value of about ten photons.
Рассматривается "слепая" к солнечному излучению фотоэмиссионная ячейка матричного приемника вакуумного ультрафиолета для диапазона длин волн 50-225 nm. Ячейка представляет в кремниевой пластине полость в форме усеченной пирамиды, стенки которой покрыты поликристаллической алмазной пленкой, играющей роль фоточувствительного катода. Конструкция ячейки позволяет организовать работу приемника "на прострел", т. е. фотоны падают на одну сторону пластины, а фотоэлектроны выходят с другой ее стороны. Оценка фоточувствительности ячейки дает величину на уровне десятка фотонов. DOI: 10.21883/PJTF.2017.07.44468.16596
The results of investigating nanostructured mediums are presented; the mediums are formed in carbon-based and semiconductor materials by the methods enabling integration into microelectronic technologies. The investigations are carried out with a wide variety of instruments and diagnostic techniques. The investigation’s results are shown to be useful in optimizing parameters of technological processes for the formation of nanostructured mediums.
The results of investigation of optical image detectors designed for the largest problem, near-VUV, range of the spectrum are presented. The possibility of using a dual-stage image detection system to appreciably lower the sensitivity threshold and make computer data processing feasible is considered. The integration of a UV module into a wideband image detector is studied.
A complex of electrophysical and technological studies of solid-state field-emission diodes is carried out. Emission comes from an array of nanometer objects near the semiconductor—polycrystalline diamond interface. The process route of the diode heterostructures includes the fabrication of nanometer masks and nanometer cone (tip) arrays, as well as plasma-assisted growth of polycrystalline diamond films on the surface of structures with nanometer cone arrays. In field-emission diodes thus formed, a current density as high as 20 A/cm 2 is achieved at a threshold of field emission from the nanotip arrays into the diamond of about 0.5 V.
The use of graphene as an electrode stimulating field emission in vacuum micro-and nanoelectronic devices is investigated. Such an application of graphene becomes possible due to its high conductivity, mechanical strength, and transparency to electrons that are incident normal to a surface.
We present the results of experimental investigations of the characteristics of solid-state field-emission diodes, which were created for the first time using silicon/diamond heterostructures with nanostructured heteroboundaries.
Diamond membranes are capable of amplifying electron flux, but membranes with dimensions exceeding 10 mm 2 are subject to deformation and sagging. In order to avoid this, it is suggested to build electron flux amplifier on a silicon grating coated with a diamond film. The possibility of using these gratings instead of microchannel plates is discussed, in particular, in cases where this grating directly plays the role of X-ray, UV, or proton detector.
A new technology of forming micropatterned masks for the etching of diamond films is proposed, which makes possible high-precision lithography on the samples with areas up to 10(4) mm(2). A minimum element size that can be achieved is only determined by the level of lithography accessible for silicon-based integrated circuits. The proposed technology can be used in creating unique devices, including biosensor chips for human genome decoding.