The results of investigations of solar-blind image converter tubes (ICTs), sensitive in the vacuum-ultraviolet (VUV) spectral range are presented. Sensitive-conversion layers of photocathodes based on boron-doped polycrystalline diamond films were grown up on sapphire substrates for the first time. Electron flow multipliers (EFMs) were fabricated in the form of diamond grid. Solar-blind VUV ICTs without the EFM are characterized by spectral sensitivity range of 180...250 nm, estimate of the threshold sensitivity value -10-9 W/Hz0.5 and current sensitivity -12 - 15 mA/W. Solar-blind VUV ICTs comprising the electron flow multipliers are characterized by extended spectral sensitivity range of 180...270 nm, improved estimate of the threshold sensitivity value 10-11... 5 x 10-12 W/Hz 0.5 and current sensitivity 50 mA/W.

The results of investigations of solar-blind image converter tubes (ICTs), sensitive in the ultraviolet spectral range are presented. Photocathodes sensitive layers of the ICT are based on boron-doped polycrystalline diamond films were grown up on sapphire substrates for the first time. Spectral range of the ICT sensitivity is 180…250 nm, the threshold sensitivity value without the electron flow multiplier ~ 10-9 W/Hz0.5 and spectral sensitivity ~ 12 - 15 mA/W.

Ultraviolet solar-blind electron-optical converters with photocathode sensor layers made of polycrystalline boron-doped diamond films, which were for the first time grown on sapphire, are studied. The spectral sensitivity range of the obtained converters is 180–250 nm, the threshold sensitivity without the electron flux multiplier is no worse than ∼10–9 W/Hz0.5, and the spectral sensitivity is 12–15 mA/W.

Silicon-diamond heterostructure based field emission media with silicon microtip arrays at the heterointerface were proposed and experimentally studied. The architecture of the heterostructures is optimized for the applications as an active medium for the field emission cathodes of mobile power microwave devices.

Performance of a detector based on AlGaAs/InGaAs/GaAs-material system was studied. The detector was comprised of large serpentine array of high-electron mobility transistors (HEMTs) connected in series. The floating drain contact of each transistor (except the last one) served as a source for the next one. Detection of terahertz (THz) radiation was based on the excitation of electron plasma oscillations in the HEMT's channel. The peculiarities of THz response of the detector in question including an enhanced noise-equivalent power were demonstrated.

THz response of AlGaAs/InGaAs/GaAs HEMT structure has been investigated. The structure consists of the serpentine chain of series connected HEMTs. The source of one is the drain for the subsequent transistor. Experiments have been showed THz response peculiarities of such structures and enhanced noise equivalent power.

Array of field-effect transistors (FET) with asymmetric T-gates and floating electrodes fabricated on a single chip was used as terahertz (THz) detector. Nonresonant detection with strong photovoltaic response was realized due to excitation of electron plasma oscillations in the common channel of the FETs array. Voltage responsivities obtained by the array of FETs with floating electrodes surpass the photoresponse reported for the array of FETs connected in series by external wiring.

The results of investigating nanostructured mediums are presented; the mediums are formed in carbon-based and semiconductor materials by the methods enabling integration into microelectronic technologies. The investigations are carried out with a wide variety of instruments and diagnostic techniques. The investigation’s results are shown to be useful in optimizing parameters of technological processes for the formation of nanostructured mediums.

The results of investigation of optical image detectors designed for the largest problem, near-VUV, range of the spectrum are presented. The possibility of using a dual-stage image detection system to appreciably lower the sensitivity threshold and make computer data processing feasible is considered. The integration of a UV module into a wideband image detector is studied.

An array of GaAs/InGaAs/AlGaAs field-effect transistors with an asymmetric T-gate in each transistor and floating electrodes was fabricated on a single chip and tested as a detector of terahertz (THz) radiation. Principle of detection was based on excitation of plasma oscillations in the common electron channel of the FETs array. Strong terahertz photovoltaic response was demonstrated without any supplementary antenna. Voltage re-sponsivities above 1000 V/W and up to 2000 V/W were obtained at zero (unbiased mode) and positive (directed from drain to source - biased mode) dc currents in the FETs array channel, respectively, surpassing the photorespponse demonstrated by the array of FETs connected in series by external wiring [5].

Detection of terahertz radiation by GaAs transistor structures has been studied experimentally. The two types of samples under study included dense arrays of HEMTs and large-apertures detectors. Arrays consisted of parallel and series chains with asymmetric gate transistors for enhanced photoresponse on terahertz radiation. We investigated two types of wide-aperture detectors: grating gate detector, and single gate detector with bow-tie antenna. Wide-aperture detectors were symmetrical. Studies of transistor chains have shown that two essential features for this type of detector are the presence of asymmetry in the gate, and the type of connection between individual transistors themselves. Wide-aperture detectors have also been tested by narrow beams of terahertz radiation, which allows analyzing the role influence of individual parts of the detector for total sensitivity to terahertz excitation. The sensitivity and noise equivalent power of the detectors were evaluated.

A tightly concatenated chain of InGaAs field-effect transistors with an asymmetric T-gate in each transistor demonstrates strong terahertz photovoltaic response without using supplementary antenna elements. We obtain the responsivity above 1000 V/W and up to 2000 V/W for unbiased and drain-biased transistors in the chain, respectively, with the noise equivalent power below 10−11 W/Hz0.5 in the unbiased mode of the detector operation.

A complex of electrophysical and technological studies of solid-state field-emission diodes is carried out. Emission comes from an array of nanometer objects near the semiconductor—polycrystalline diamond interface. The process route of the diode heterostructures includes the fabrication of nanometer masks and nanometer cone (tip) arrays, as well as plasma-assisted growth of polycrystalline diamond films on the surface of structures with nanometer cone arrays. In field-emission diodes thus formed, a current density as high as 20 A/cm 2 is achieved at a threshold of field emission from the nanotip arrays into the diamond of about 0.5 V.

We present the results of experimental investigations of the characteristics of solid-state field-emission diodes, which were created for the first time using silicon/diamond heterostructures with nanostructured heteroboundaries.