We described the synthesis method and presents the results of a study of the magnetic and magnetotransport properties of vertical hybrid structures Fe3Si/Ge/Mn5Ge3/Si. The mechanisms responsible for the detected magnetoresistive effect and the possible contribution of the spin-valve effect, realized through spin injection/extraction into/from germanium, are discussed.

The effect of the MnxGey buffer layer on the morphology, transport and magnetic properties of Mn5Ge3 thin films grown on substrates Si(111) has been studied. Using X-ray diffraction analysis and atomic force microscopy, it has been found that changing the thickness and structure of the buffer layer with a gradient MnxGey composition has made it possible to control the crystalline quality and smoothness of epitaxial films. Changes in the microstructure and surface roughness has not affected the temperature of the phase transitions revealed from the temperature dependences of the resistivity and magnetization at 75 and 300 K. It has been shown that the features of the magnetization curve shape for films with different buffer layers have been closely related to the inhomogeneity of the films in thickness and surface roughness while maintaining the micromagnetic constants and orientation of the easy magnetization axis. The value of the change in the magnetic part of entropy ΔS has been calculated to be 2.1 J kg–1 K–1 at 1 T, which is comparable with the value for gadolinium and exceeds that for Mn5Ge3(001) films grown on GaAs substrates.

Planar and vertical hybrid structures, which combine ferromagnetic and semiconductor layers are essential for implementation and study of spin transport phenomena in semiconductors, which is crucial for the advancement and development of spintronics. We have developed approaches for the synthesis of Fe 3 + x Si 1 – x epitaxial thin films and demonstrated the spin accumulation effect in multiterminal devices based on Fe 3 + x Si 1 – x /Si. Fe 3 + x Si 1 – x /Ge/Fe 3 Si and Fe 3 + x Si 1 – x /Ge/Mn 5 Ge 3 multilayer hybrid structures were synthesized on a Si(111) substrate, study of their structural, magnetic and transport properties were performed. The effect of synthesis conditions on the growth of epitaxial structures and on their magnetic and transport properties was discussed. The results obtained may prove valuable in the development and fabrication of spintronic devices.

The temperature dependence of the resistivity of titanium oxynitride TiNxOy thin films with different oxygen and nitrogen content obtained by atomic layer deposition was investigated. We found that the resistance of all films monotonically decreased with increasing temperature and varied within a wide range depending on the chemical composition and thickness of the film. The technology for obtaining a compact temperature sensor of wide range from helium to room temperature based on 40-nm thick TiN0.87O0.97 is presented.

The temperature dependence of the resistivity of titanium oxynitride TiNxOy thin films with different oxygen and nitrogen content obtained by atomic layer deposition was investigated. We found that the resistance of all films monotonically decreased with increasing temperature and varied within a wide range depending on the chemical composition and thickness of the film. The technology for obtaining a compact temperature sensor of wide range from helium to room temperature based on 40 nm thick TiN0.87O0.97 is presented. Keywords: titanium oxide-nitride, temperature sensors, thin films, atomic layer deposition, integrated circuit components.

Technological process of manufacturing of the polutorovy bottoms by methods of anextract and reversive extract of aluminum alloy AMg6 is given.

In this work, we studied the electronic transport properties of silicon nanowire field-effect transistors with a back gate. A nontrivial magnetic field influence on the drain current at low temperature (10 K) was found. The strongest effect was observed in the majority carrier accumulation mode. In this mode magnetic field of 0.5 T increases current through the device by more than an order of magnitude. The paper describes the possible mechanisms of the magnetic field influence on the electronic transport characteristics of the structures.

In this work we show a preparation technique of Co2FeSi full-Heusler alloy thin films on silicon-on-insulator (SOI) substrates, employing rapid thermal annealing (RTA). The films of the Co2FeSi alloy were formed by a silicidation reaction, caused by RTA, between the ultrathin SOI (001) layer and the Fe/Co layers deposited on it. It is assumed that this technology is compatible with the process of formation of a half-metal source-drain in an advanced CMOS and SOI technology and will be applicable for the manufacture of a source-drain of a field-effect transistor. Schottky barrier field-effect transistors (FET) with a back-gate, based on silicon nanowires with source and drain of a Co2FeSi film, synthesized on an SOI substrate, were manufactured. The transport properties of the device were investigated.