We have analyzed chemical bonding of atmospheric oxygen with chromium and manganese on the epitaxial MAX-phase (Cr0.5Mn0.5)2GaC surface using Auger electron spectroscopy combined with ion etching. It was found that the system has a specific anisotropic oxidation where oxygen atoms bind to chromium and manganese ones more actively at the edges of layered MAX phase crystallites in contrast to the (0001) basal plane. At the same time, the dominance of the Mn-O chemical bonding over Cr-O is observed on the latter.

The temperature dependence of the resistivity of titanium oxynitride TiNxOy thin films with different oxygen and nitrogen content obtained by atomic layer deposition was investigated. We found that the resistance of all films monotonically decreased with increasing temperature and varied within a wide range depending on the chemical composition and thickness of the film. The technology for obtaining a compact temperature sensor of wide range from helium to room temperature based on 40-nm thick TiN0.87O0.97 is presented.

Technological process of manufacturing of the polutorovy bottoms by methods of anextract and reversive extract of aluminum alloy AMg6 is given.

Thin films based on single walled carbon nanotubes with a thickness of 11 ± 3 to 157 ± 18 nm were formed using vacuum filtration. The thermal conductivity coefficient in thin films was studied depending on the thickness and temperature up to 450 K using the 3ω method. It was found that, in the region of 49 nm, the supplied heat from the gold strip began to efficiently propagate into the plane of the thin film. The thermal conductivity coefficient for thin films with a thickness of 49 ± 8 nm was measured according to the 3ω method for bulk samples. It was found that the thermal conductivity in thin films based on single walled carbon nanotubes strongly depends on the thickness and temperature. The thermal conductivity increased sharply (~ 60 times) with increasing thickness from 11 ± 3 to 65 ± 4 nm. In addition, it was revealed that the thermal conductivity coefficient for 157 ± 18 nm thin film rapidly decreased from 211 ± 11 to 27.5 ± 1.4 W · m-1 · K-1 for 300 and 450 K, respectively.

The electrical injection of a spin-polarized current into silicon was demonstrated in the Fe3Si/n-Si epitaxial structure. The spin accumulation effect was studied by measuring local and nonlocal voltage signals in a specially prepared 4-terminal device. The detected effect of electrical bias on the spin signal is discussed and compared with other results reported for ferromagnet/semiconductor structures.

AbstractThin films have been produced via a spray method from commercially available single-walled carbon nanotubes (SWCNTs). A SWCNT film thickness has ranged from ~10 to ~80 nm. The SWCNT diameter has accepted values of 1.6–1.8 nm. The existence of SWCNTs longer than 10 μm is established. The optimal thickness of a SWCNT thin film is found to be ~15 nm at which the transmittance exceeds 85%. The specific resistance of SWCNT thin films goes from ~1.5 × 10^–3 to ~3 × 10^–3 Ohm cm at room temperature. The pioneering study of the temperature dependences of the Seebeck coefficient and surface resistance is performed for this type of SWCNT. A surface resistance is found to increase with rising temperature. Furthermore, the Seebeck coefficient of SWCNT thin films weakly depends on temperature. Its value for all samples is evaluated to be ~40 μV/K. According to the sign of the Seebeck coefficient, thin films exhibit hole-type conductivity. Moreover, the power factor of a 15-nm thin SWCNT-film decreases with a temperature increase to 140◦C from the value of approximately ~120 to ~60 μW m^–1 K^–2. A further rise in temperature has led to a gain in the power factor.

AbstractThe results of structural and magnetic investigations of nanogranular Co–Al_2O_3 films formed from Co_3O_4/Al thin-film layered structures upon vacuum annealing are reported. The Co_3O_4/Al films have been obtained by sequential reactive magnetron sputtering of a metallic cobalt target in a medium consisting of the Ar + O_2 gas mixture and magnetron sputtering of an aluminum target in the pure argon atmosphere. It is shown that such a technique makes it possible to obtain nanogranular Co–Al_2O_3 single- and multilayer thin films with a well-controlled size of magnetic grains and their distribution over the film thickness.