In this paper, simple corrections to traditional Drift-Diffusion mobility models are derived from strained full-band Monte Carlo simulations in order to correctly account for strain effects. The validity of this approach is benchmarked upon Monte Carlo MOSFET simulations as well as experimental data featuring tensile nitride capping layers.

An analytical model for the nano-MOSFET based on the determination of ballistic and backscattering probabilities along the channel is developed. This model, validated by analysis of transport in device using scattering spectroscopy, has been used to model the strained MOSFET by evaluating the appropriate scattering relaxation times and the carrier distribution. Finally, it has been used to determine the impact of CESL on the IONenhancement.

We present measurements of GIDL at various temperatures and terminal biases. Besides band-to-band (BBT) tunneling leakage observed at high drain-to-gate voltage VDG, we also observed trap-assisted-tunneling (TAT) leakage currents at lower VDG. Based on ISE TCAD simulations of the electric field, we propose analytical models for BBT and TAT GIDL currents suitable for compact modelling.

We present measurements of Gate-Induced-Drain-Leakage at various temperatures and terminal biases. Besides Band-to-Band tunneling leakage observed at high Drain-to-Gate voltage v DG , we also observed Trap-Assisted-Tunneling leakage current at lower v DG . Based on ISE TCAD simulations of the electric field, we propose analytical models for Band-to-Band and Trap-Assisted Gate-lnduced-Drain-Leakage currents suitable for compact modeling.

We present measurements of GIDL at various tempera- tures and terminal biases. Besides Band-to-Band (BBT) tun- neling leakage observed at high Drain-to-Gate voltuge V,, , we also observed Trap-Assisted-Tunneling (TAT) leakage current at lower V,, . Based on ISE TCXD simula- tions of the electric field, we.propose analytical models for BBT and TAT GIDL currents suitable for compact model- ling.