Downscaling nanoelectronic circuits with conventional lithography becomes increasingly demanding. The quest for less laborious and more sustainable alternatives has sparked investigations attempting to self‐assemble electronics. DNA origami molds offer an exceptional platform for templating metallic nanostructures, enabling programmability and spatial control over nanowire formation. For electrical interconnects, a range of materials capable of forming reliable ohmic contacts is essential. Here, we present the self‐assembly and full electrical characterization of Pd nanowires based on DNA origami molds. The nanowires exhibit metallic behavior showing linear current–voltage characteristics and a decreasing resistance with lowering temperature. While annealing strategies lead to a decrease in conductance, structural rearrangements induced by the applied electric field can either enhance or inhibit charge transport. These findings highlight the potential of DNA‐templated Pd nanowires as self‐assembled metallic interconnects with tuneable electric properties suitable for nanoelectronic circuits.

As semiconductor technologies approach the subnanometer node, conventional CMOS scaling faces fundamental physical limitations. To overcome these challenges, novel device architectures are being investigated to sustain performance improvements and enable enhanced functionality. This work explores silicon nanowire field‐effect transistors (FETs) fabricated using a top‐down, CMOS‐compatible process, employing n‐type phosphorus‐doped channels with systematically varied doping concentrations. The influence of doping on carrier transport is investigated through back‐gate, top‐gate, and dual‐gate configurations. Lightly doped devices exhibit transport dominated by Schottky‐barrier modulation, enabling ambipolar and unipolar operation, polarity control, and tunable transfer characteristics with on/off current ratios up to 10 8 and excellent p–n on‐current symmetry of 1.67, emulating reconfigurable modes of operation. In contrast, increasing the doping concentration and reducing the channel length promote a transition toward junctionless operation. Highly doped short‐channel devices with gate lengths down to 500 nm and cross‐sectional dimensions of 20 nm exhibit unipolar operation, strong electrostatic control, and scalable junctionless behavior. These devices achieve on/off current ratios exceeding 10 6 , stable threshold voltages below 1 V, and moderate subthreshold swing. This work provides insight into the evolution of transport mechanisms from Schottky‐barrier‐controlled to junctionless operation, demonstrating doping‐dependent switching of functionality within a CMOS‐compatible platform.

Nanostructured semiconductors have unique physical properties that can have many applications, including optoelectronics, nanoelectronics, etc. Functionalization of nanoelectronic devices often requires specific electrical properties in different regions of the nanowire to form a p-n junction or ohmic contact. Such locally doped regions can be created by selective ion implantation. In the present work, we investigated the microstructure and optical properties of GaAs/GaAs:Si/AlxGa1-xAs core-shell nanowires after ion implantation and postimplantation annealing. GaAs/GaAs:Si/AlxGa1-xAs core-shell nanowires were implanted with sulfur ions at a fluence of 2.3 x 10(15) cm(-2). After ion implantation, the nanowires were subjected to flash-lamp annealing (FLA) for 3.2 ms or to conventional rapid thermal annealing (RTA) for 90 s. Raman and microstructural analyses indicate that FLA treatment with an energy density of 102 J cm(-2) can almost fully restore the original crystalline quality of the nanowires. On the other hand, photoluminescence (PL) measurements show that nanowires subjected to RTA exhibit a stronger emission intensity; however, RTA at 550 degrees C leads to severe decomposition of the AlxGa1-xAs shell.

Bottom‐up fabrication of inorganic nanostructures is emerging as an alternative to classical top‐down approaches, offering precise nanometer‐scale control at relatively low cost and effort. In particular, DNA nanostructures provide versatile scaffolds for directly templating the growth of metal structures. Previously, a DNA mold‐based method for metal nanostructure synthesis has been established that supports a modular structure design and a high control over the structure formation. So far, this method has been limited to the growth of gold and palladium nanostructures. Here, we report on the successful adaptation of the DNA mold‐based fabrication method to produce continuous silver nanowires. By optimizing reagent concentrations and applying gentle thermal annealing, we obtain continuous wire structures of several hundred nanometer in length and 27 nm in diameter, overcoming limitations in anisotropic growth. Electric measurements reveal, however, an insulating behavior of these wires. Detailed material analysis shows that the structures initially consist of metallic silver. Upon the deposition on a solid substrate, the silver phase becomes contaminated mainly by atmospheric sulfur, accompanied by structural changes of the wire. This work demonstrates the versatility of DNA‐based metallization and, at the same time highlights the importance of optimizing post‐processing and contacting conditions for successful device fabrication using silver nanoelectrodes.

Solution-processable semiconductor nanocrystals (NCs) offer a versatile, highly tunable platform for low-cost, next-generation electronics. However, their integration into field-effect transistors (FETs) remains limited by the challenge of optimizing synthesis, surface chemistry, and charge transport. In this work, CuInSe2 NCs are synthesized, and their organic, insulating ligand environment is exchanged with short inorganic ligands such as sulfides, to enable efficient interparticle coupling. The all-inorganic dispersions are spin-coated and top-contacted to fabricate fully functioning FETs. Reference samples exhibit saturation mobilities of & micro;sat = 2.30 +/- 0.76 & times; 10-3 cm2 V-1 s-1 and a current modulation Ron/off = 10.4. Systematic variation of key parameters-including NC size, ligand chemistry, film thickness, and transistor geometry-provides a comprehensive understanding of the structure-property relationships, enhancing the final FET performance up to & micro;sat = 12.93 +/- 1.23 & times; 10-3 cm2 V-1 s-1. This study presents a knowledge platform for advancing NC-based electronics toward practical applications.

Nanostructured semiconductors have unique physical properties that can have many applications, including optoelectronics, nanoelectronics, etc. Functionalization of nanoelectronic devices often requires specific electrical properties in different regions of the nanowire to form a p‐n junction or ohmic contact. Such locally doped regions can be created by selective ion implantation. In the present work, we investigated the microstructure and optical properties of GaAs/GaAs:Si/Al x Ga 1−x As core–shell nanowires after ion implantation and postimplantation annealing. GaAs/GaAs:Si/Al x Ga 1−x As core–shell nanowires were implanted with sulfur ions at a fluence of 2.3 × 10 15 cm −2 . After ion implantation, the nanowires were subjected to flash‐lamp annealing (FLA) for 3.2 ms or to conventional rapid thermal annealing (RTA) for 90 s. Raman and microstructural analyses indicate that FLA treatment with an energy density of 102 J cm −2 can almost fully restore the original crystalline quality of the nanowires. On the other hand, photoluminescence (PL) measurements show that nanowires subjected to RTA exhibit a stronger emission intensity; however, RTA at 550°C leads to severe decomposition of the Al x Ga 1−x As shell.

The fabrication of group-IV superconducting semiconductors has received considerable attention owing to their potential for integration with hybrid semiconductor-superconductor circuits. In this context, superconducting germanium-on-insulator (GeOI) is particularly promising, as it can fully exploit the advantages of the GeOI technologies for advanced electronic devices. In this study, we demonstrate superconductivity in GeOI via Ga ion implantation and millisecond-range flash-lamp annealing (FLA). Electrical measurements showed an activated hole concentration of approximately 8 & times; 1020 cm-3, with a superconducting transition temperature of around 150 mK. Additionally, the critical magnetic field aligns well with the behavior expected for diluted superconducting semiconductors. The superconducting GeOI provides a foundational platform for potential applications in future quantum devices.

Sensitivity of field-effect transistor biosensors (BioFETs) for nucleic acid detection is often limited by weak electrostatic control and low probe density at the sensing interface. Here, we present a BioFET platform with improved sensitivity based on lightly p-doped Schottky-barrier silicon nanobelt transistors, exhibiting reproducible ambipolar behavior in a back-gated configuration. These devices are encapsulated with an Al2O3/ZrO2 nanolaminate to prevent device performance degradation and facilitate stable biofunctionalization. Dry-state measurements demonstrate selective detection of prostate cancer biomarker, miR-141, after immobilization of complementary capture DNA, achieving detection down to the ~100 pM range, and discrimination against the non-complementary sequence, miR-155. To enhance sensitivity, template-assisted self-assembly of gold nanoparticles (AuNPs) is used to form ordered linear structures directly on the sensing region. The supracolloidal assembly of AuNPs at the sensing interface tunes the receptor spacing and orientation and amplifies the influence of target hybridization on transistor response. Compared to planar devices, the hybrid AuNPBioFET exhibits improved signal modulation while preserving the label-free detection mechanism. This approach bridges scalable top-down semiconductor technology and bottomup self-assembled nanostructures, providing an innovative pathway for developing biosensing platforms with high sensitivity and multiplexing capabilities for detecting nucleic acids.

Hybrid nanostructures from metal nanoparticles equipped with conducting polymer shells are of great interest for use as functional materials in sensing and optoelectronics, as well as for ink-deposited conductors. Here, we investigate the charge transport mechanism of nanostructures composed of gold nanoparticles coated with a polyaniline shell (Au@PANI). In particular, we focus on the charge transport behavior in two different geometric systems. Highly ordered linear assemblies of Au@PANI nanoparticles were fabricated using template-assisted assembly, while bulk-like films were obtained via drop-casting. Temperature-dependent transport measurements were analyzed using established conductance models. In a higher (175-300 K) and lower (50-150 K) temperature range, bulk-like films of Au@PANI nanoparticles show good agreement with Arrhenius-type activation and Efros-Shklovskii Variable Range Hopping, respectively. Measurements on linear assemblies were conducted at higher field strength, due to nanoscale electrode geometries. These assembles exhibit more localized transport, indicated by a highly non-linear current-voltage behavior. Here, the temperature dependencies was described using an Arrhenius-type activation at higher temperatures (≥125 K); in contrast, non-thermally activated processes became effective at lower temperatures (<125 K). Our findings provide insights how geometry of particle assemblies and electrode configurations influence the charge transport behavior in Au@PANI nanoparticle assemblies.

The doping of two-dimensional (2D) transition metal dichalcogenides (TMDCs) by an approach compatible with circuit integration is crucial. However, ion implantation, the most commonly used method for doping semiconductors, poses significant challenges for 2D-TMDCs because of the requirement for ultralow ion energy and the difficulty of restoring damaged 2D materials. Here, we achieve bipolar transport in intrinsic n-type WS2 monolayers through phosphorus (P) ion implantation using commercial ion implanters. Millisecond flash lamp annealing is employed to remove ion-induced defects and activate P. Experimental results show a clear change in carrier type with increasing ion fluence. Samples implanted with a fluence of 7.5 x 10(12) cm(-2) display ambipolar transport behavior with an on/off ratio of 4.4 x 10(5) and 1.6 x 10(6) for p- and n-branch, respectively. At the same time, the optical and structural properties of WS2 are well preserved. All of these findings not only complement the fundamental understanding of 2D-TMDCs but also provide a possible route for heterointegration of TMDCs into current Si-based semiconductor technologies.

Determining the concentration of electrically active dopants in III-V core-shell nanowires has long been a challenge due to the difficulty of developing ohmic contact with the nanowire core. In this paper, we have used a noncontact optical method to estimate the electron concentration in Si-doped GaAs:Si/Al0.25Ga0.75As core-shell nanowires. The temperature-dependent photoluminescence (PL) spectra of these GaAs:Si/Al0.25Ga0.75As nanowires indicate that at 15 K, the carrier concentration in the conductive core of the core-shell nanowires can be as high as 1.40 x 1018 cm-3. The band-filling effect was considered to accurately determine the concentrations of carriers in the nanowires using optical methods. The highest electron density is achieved for a nominal Si concentration of 1.89 x 1019 cm-3, and a further increase in Si concentration reduces the effective doping level due to the amphoteric behaviour of Si in GaAs. The dependence of the integrated PL intensity on the laser power at T = 15 K exhibits a typical two-thirds power dependence, indicating the presence of a nonradiative Auger recombination mechanism in the nanowire under high carrier concentration.

Group-IV superconducting semiconductors present promising opportunities on the development of scalable hybrid platforms for quantum devices. However, achieving superconducting states in semiconductors remains challenging, particularly concerning the origin of coherent coupling and the relationship between carrier concentration and critical temperature. In this study, ion implantation and flash-lamp annealing are used to achieve hyperdoped Si x Ge 1-x alloys. We investigate the tunability of the superconducting transition temperature by adjusting the Si/Ge composition and the Ga implantation fluences. As the Si concentration in Si x Ge 1-x increases, while maintaining identical doping fluences, the critical temperature is reduced from 550 mK to 40 mK. This is due to the lower solubility of Ga in Si than in Ge. Furthermore, as the Ga fluence decreases, the critical temperature is also reduced from 550 mK to 80 mK. We establish a qualitative correlation between critical temperature and free-hole concentration, which can be tuned by varying the Ga implantation fluence and the Si x Ge 1-x alloy composition.

The scaling limitations of conventional transistors demand alternative device concepts capable of dynamic reconfigurability at the atomic scale. Resistive switching (RS), a key mechanism for neuromorphic computing and non-volatile memory, has been widely demonstrated in oxides, semiconductors, and nanocomposites, but not in pure one-dimensional metallic systems. Here, we report the first electrical characterization of gold nanowires (AuNWs) synthesized within the lumen of functionalized microtubules. Structural analyses confirm continuous metallic wires with local compositional inhomogeneities. Electrical measurements reveal three distinct conduction behaviours and abrupt, reversible resistance transitions under applied bias, consistent with defect-driven electromigration. Voltage pulsing enables active and reproducible modulation of resistance states without loss of metallic conduction, establishing a new RS mechanism intrinsic to pure metallic nanowires. Owing to their high aspect ratio, lateral geometry, and CMOS-compatible processing, microtubule-templated AuNWs provide a versatile platform for reconfigurable interconnects and neuromorphic device architectures.

Semiconductor nanowire-based photodetectors with high sensitivity and fast photoresponse in the near-infrared wavelength range are crucial for applications in light-wave communication switches, as well as environmental and atmospheric sensing. However, to advance this field, it is essential to develop innovative fabrication techniques that improve device performance. Here, the fabrication of an axial p-n junction along single germanium nanowires (Ge NWs) and their photoresponse characterization at near-infrared wavelengths are reported. The resulting devices exhibit rectifying current-voltage characteristics with a high rectification ratio in dark conditions and operate with high sensitivity at zero bias under illumination. A high responsivity of 1.72 AW-1, a low noise-equivalent power of 5.68 x 10-11 W/Hz$\mathrm{W/\sqrt {Hz}}$, and a high-frequency response with a 3dB cut-off frequency of 2.85 GHz are determined under 850 nm laser illumination at reverse bias. The high sensitivity of the Ge NW-based photodetectors is ascribed to the radial built-in electric field, which increases the carrier lifetime. In addition, the small size of the Ge NWs results in very small capacitance, leading to very fast response. These results have significant potential for advancing high-speed and low-power photodetectors in next-generation optical communication systems and integrated optoelectronic devices.

Gold-assisted exfoliation has emerged as an effective method for producing large-area monolayers of two-dimensional materials, yet its underlying mechanism remains poorly understood. While other metals also hold promise for facilitating large-area exfoliation, their practical application is hindered by oxidation in air. To address this, we fabricate heterostructures of monolayer MoS2 with polycrystalline gold, silver, copper, palladium, cobalt, and nickel via direct mechanical exfoliation of bulk molybdenite under controlled atmospheric conditions. Our photoemission spectroscopy, vibrational spectroscopy, and density functional theory results reveal the metal-dependent modification of monolayer MoS2. We identify the hybridization directionality and, in particular, the asymmetry between the bottom and top sulfur atoms as previously overlooked key factors in weakening the MoS2-MoS2 van der Waals interaction, ultimately enabling selective monolayer exfoliation.

Spintronic terahertz (THz) frequency conversion in ferromagnet/heavy metal (FM/HM) heterostructures has the potential to enhance high-speed data communication and advance ultrafast magnetic memory applications. By leveraging ultrafast spin currents and spin-orbit interactions in FM/HM systems, broadband THz generation can be achieved, with recent studies demonstrating spintronic THz second harmonic generation (TSHG) and optical rectification. We introduce concepts for controlling the frequency conversion and temporal characteristics of TSHG through active manipulation of FM magnetization, providing flexibility in second harmonic emission and waveform shaping. The TSHG valve is realized by employing THz metamaterials, consisting of hybrid FM/HM structures combined with subwavelength gold periodic arrays. Additionally, using microstructured gold periodic arrays, we investigate the TSHG field enhancement capability as a function of grating filling factor and explore the potential for TSHG cavity enhancement. (c) 2025 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).

MXenes, a family of 2D transition metal compounds, have emerged as promising materials due to their unique electronic properties and tunable surface chemistry. However, the translation of these nanoscale properties into macroscopic devices is constrained by suitable cross-linking strategies that enable both processability and controlled inter-flake charge transport. Herein, this study demonstrates the tunability of interfaces and the inter-layer spacing between Ti3C2Tx MXene flakes through molecular cross-linking with homologous diamines. Oleylamine is first used to stabilize MXenes in chloroform, followed by diamine-mediated cross-linking to tune precisely the interlayer spacing. Grazing incidence X-ray scattering (GIXRD/GIWAXS) confirmed the correlation between ligand chain length and inter-layer spacing, which is further supported by Density Functional Theory (DFT) calculations. Furthermore, the charge transport properties of thin films consisting of diamine-cross-linked Ti3C2Tx MXenes are investigated and a strong dependence of the conductivity on the cross-linker length is observed. The dominating charge transport mechanism is variable range hopping (VRH) in accordance with the structure of the films. Finally, chemiresistive vapor sensing is probed using the MXene composites, and a pronounced sensitivity and selectivity for water is observed, highlighting their potential for use in humidity sensors. Insights into molecular cross-linking and its impact on charge transport open avenues for next-generation MXene-based electronic devices.

Top-down fabrication of reconfigurable field effect transistors (RFET) is a prerequisite for large-scale integration. Silicon (Si) nanowire-based RFET devices have been extensively studied in the past decade. To achieve superior RFET performance, it is necessary to develop scalable devices with controlled silicidation of the channels, a high on-off ratio, and symmetrical p- and n- on-currents. In this work, we present the electrical performance of scalable RFET devices based on Si nanowires featuring controlled silicide lengths attained through millisecond-range flash lamp annealing (FLA). The electronic properties of the transistors are optimized by tuning the different gate schemes and gate dielectric materials for nanowire passivation. We explore gate capacitive control on the energy bands in the conduction of charge carriers using various dielectric materials. The transfer characteristics of a single top-gated device with SiO2 as gate dielectric show enhanced ambipolar behavior with negligible hysteresis, low subthreshold swing values of 210 mV/dec, and an on-off ratio (I ON/I OFF) of up to ∼108 (8 orders of magnitude). The devices also demonstrate excellent electron and hole symmetry values with a record pn on-current symmetry of 1.03. Utilizing high-performance, scalable RFET devices with elevated symmetrical on-currents holds great promise for reducing delay and power consumption in future energy-efficient integrated circuitry.

Ge1−xSnx and Si1−x−yGeySnx alloys are promising materials for future nanoelectronic applications owing to their high carrier mobilities and CMOS compatibility. However, ternary Si1−x−yGeySnx transistors have only theoretically been discussed, and there are only a few reports on lateral n-type Ge1−xSnx transistors to benchmark their material performance. The low equilibrium solid solubility of Sn in Si1−xGex (less than 1 at%) requires device fabrication processes at temperatures below the growth temperature of Si1−x−yGeySnx (x > equilibrium solubility) or at non-equilibrium conditions. Therefore, Si-based processes need to be adjusted according to the materials requirements. A relatively easy-to-fabricate device concept are junctionless field effect transistors, which operate as a gated resistor. In this work, we use Ge0.94Sn0.06 and Si0.14Ge0.80Sn0.06 grown on silicon-on-insulator substrates to fabricate and characterize lateral n-type Ge1−xSnx and SiyGe1−x−ySnx junctionless field effect transistors. The transistors were structurally characterized by top-view scanning electron microscopy and cross-sectional transmission electron microscopy. Electrical characterizations by transfer characteristics show the first working n-type Ge1−xSnx and Si1−x−yGeySnx hetero-nanowire transistors, achieving on/off-current ratios of up to eight orders of magnitude.