BACKGROUND: Physicians hold the belief that the treatment outcomes and the treatment strategy they eventually adopt is largely determined by the differences in medications. Despite numerous studies focusing on the decision-making processes of psychiatrists, including the choice of antipsychotics when prescribing pharmacotherapy, the impact of therapeutic drug profiling on physicians’ decision-making remains poorly comprehended. AIM: The aim of this study is to assess the quantitative differences in perceptions of antipsychotics by psychiatrists using cariprazine and risperidone as examples. METHODS: A total of 79 psychiatrists were interviewed anonymously in St. Petersburg, Russia. The physicians documented the clinical advantages they perceived drugs to possess relative to one another, following a predetermined principle: A B, A=B, A B (2-AC protocol). The comparison is based on eleven parameters that assess the effectiveness and safety of cariprazine or risperidone. It has been hypothesized that the pattern of responses (qualitative difference) and the degree of preference for each drug (quantitative difference) may not align with the data in the original meta-analyses. RESULTS: The perception parameter exhibited a greater difference than anticipated (δ — 0.889), while the threshold for differentiating between the drugs was lower (τ — 1.001). The response pattern only aligned with theory by 44.37%. The dispersion of responses was associated with the length of work experience. CONCLUSION: The perceived difference between the drugs significantly deviates from the theoretical data, both in terms of strength of perception and pattern (quantitative and qualitative differences).

We report on experimental detection of 10 nm $\mathrm{Si}$ nanoparticles on $\mathrm{Si}$ surface using spatial modulation microscopy. We show that a simple optical layout with a galvo-mirror allows reliable detection of $9\ifmmode\times\else\texttimes\fi{}10$ nm $\mathrm{Si}$ nanocylinders with signal-to-noise ratio 4.6 when the wavelength is tuned to the spectral range of direct-band optical transitions in silicon. We also show the possibility to use the spatial modulation microscopy principles for nonabsorbing particles. We demonstrate successful detection of $\mathrm{Si}$ nanocylinders down to $20\ifmmode\times\else\texttimes\fi{}40\phantom{\rule{0.2em}{0ex}}\mathrm{nm}$ by scattered light ($\ensuremath{\lambda}=680$ nm) analysis. Our results pave the way to an inspection method for semiconductor metrology.

We report the experimental observation of the UV-visible upconverted luminescence of bulk silicon under pulsed infrared excitation. We demonstrate that non-stationary distribution of excited carriers leads to the emission at spectral bands never to our knowledge observed before. We show that the doping type and concentration alter the shape of luminescence spectra. Silicon nanoparticles have a size between quantum-confined and Mie-type limits (10-100 nm) yet show increased luminescence intensity when placed atop a silicon wafer. The findings demonstrate that upconversion luminescence can become a powerful tool for nearest future silicon wafer inspection systems as a multimodal technique of measuring the several parameters of the wafer simultaneously.

We demonstrate the broadband visible luminescence from bulk crystalline silicon and silicon nanoparticles sized 100- 30 nm under near-infrared excitation. We show that the luminescence spectrum has two distinct peaks. The first being centered at 550 nm while the second appears close to the wavelength of the second harmonic of the excitation light. The appearance of the second peak is a signature of the highly athermal electron distribution never observed previously. The luminescence intensity and spectral shape strongly depend on the doping type and concentration. Despite being nonresonant, silicon nanoparticles enhance luminescence intensity when placed atop the silicon wafer. The observed phenomenon can be used for wafer inspection and defect detection, as well as for the creation of novel nanosources of light.

Detection of a single nanoparticle on a bare silicon wafer has been a challenge in the semiconductor industry for decades. Currently, the most successful and widely used technique is dark-field microscopy. However, it is not capable of detecting single sub-10 nm particles owing to a low signal-to-noise ratio (SNR). As a new approach, we suggest using the second harmonic generation (SHG) to detect a single nanoparticle. The second harmonic generation in centrosymmetric materials, like silicon, is forbidden except for a thin and additionally increase local field factors, allowing for their persistent detection. Choosing the proper surface and increasing SNR. We demonstrate the feasibility of the nonlinear dark-field microscopy concept by detecting an isolated 80-nm silicon nanoparticle on the silicon wafer.

A ship encounters wave loads in actual seas, it is necessary to estimate the ship's manoeuvring performance in waves for its safe operations. In this study, turning characteristics of a KCS model ship in regular waves were investigated by free-running model tests. 35° port and starboard turning circle tests in regular waves were carried out in KRISO Ocean Engineering Basin with variations of regular wave heights, lengths, directions and model approach speeds. Propeller revolution rate was mostly fixed at the constant value corresponding to the full-scale speed of 16 knots in calm water. Ship's turning behaviours in waves can be divided into initial and steady turn phases. Firstly, during initial turns, the ship's safety which is related to avoiding a fixed front obstacle is focused on. ‘DMINw’ is defined as the minimum distance between the fixed front obstacle and the ship initial trajectory. And safety index ‘STw’ is proposed, which is formulated by using the ratio between DMINw in calm water and in waves. The ship becomes safer in head waves than calm water due to small advances. In starboard beam waves, when the ship turns to starboard, that becomes dangerous due to small transfers. In port beam waves, the ship which turns to starboard is mostly safe. But, in short port beam waves, yaw angle is slowly increased and the advance is relatively large. It is hypothesized that the wave drift yaw moments prevent the ship from turning to starboard. Secondly, drifting distances and angles in steady turns are quantified. The drifting distances increase with decreasing wave lengths, when the wave lengths are varied from 0.5 to 1.0 ship length. The drifting distances are approximately proportional to the wave steepness. Finally, approximate formula of STw is proposed. That is formulated as the function of ship advance and transfer in calm water and waves only. DMINw can be simply obtained if the initial trajectory is approximated as the ellipsoidal quadrant. Based on several parametric simulations, it was confirmed that STw is proportional to the cube of the transfer in waves and is inversely proportional to the advance in waves. STw is formulated so that it can be applied to arbitrary ships.

We developed the framework for numerical calculation of the valence band dispersion in quantum well structures and the energy spectrum of the shallow acceptor in QWs. We used the finite-difference method to quantize the Luttinger-Kohn Hamiltonian and the decomposition of the impurity potential over the eigenstates of the Luttinger-Kohn Hamiltonian with the QW profile to obtain the acceptor states energies and wavefunction in k→-space. Developed approach allows one to calculate the energies of the acceptor states with spherical symmetry for an arbitrary QW potential profile with the coordinate-dependent material parameters.

The article presents and analyzes current views on the classification, pathogenesis, diagnostic and treatment of Gilles de la Tourette syndrome. The age and gender features of the course of Tourette syndrome (TS) and comorbid disorders are described. In many psychiatrists’ opinion one of the most important courses is the study of psychiatric comorbidities in TS, which do not allow timely diagnosing of TS. Several authors propose to conceptualize certain comorbid disorders as independent ones that do not have common pathogenesis chains with TS. The least studied comorbid disorders in TS include epilepsy, although antiepileptic drugs can be effective in treating patients with TS. In consideration of the difficulty of TS diagnosing in the presence of psychiatric comorbidities, number of authors comes to the conclusion that patients have to get treatment of identified psychiatric disorder. However, according to the results of other authors’ clinical observations, there is evidence of aggravation of the course of both TS and comorbid disorder with the described therapeutic tactic. Genetics and instrumental research methods also do not reveal univocal diagnostics criteria. The authors of the article conclude that questions of diagnostics and treatment of Gilles de la Tourette syndrome are still unsolved

This article discusses specific quantum transitions in a few-particle hole gas, localized in a strongly oblate lens-shaped quantum dot. Based on the adiabatic method, the possibility of realizing the generalized Kohn theorem in such a system is shown. The criteria for the implementation of this theorem in a lens-shaped quantum dot, fulfilled in the experiment, is presented. An analytical expression is obtained for the frequencies of resonant absorption of far-infrared radiation by a gas of heavy holes, which depends on the geometric parameters of the quantum dot. The results of experiments on far-infrared absorption in the arrays of p-doped Ge/Si quantum dots grown by molecular beam epitaxy (MBE) with gradually increasing average number of holes in dot are presented. Experimental results show that the Coulomb interaction between the holes does not affect the resonant frequency of the transitions. A good agreement between the theoretical and experimental results is shown.

The results of experiments on the fabrication (by molecular-beam epitaxy) and investigation of the heterostructures of a two-frequency quantum-cascade laser produced on the basis of a heteropair of In0.53Ga0.47As/Al0.48In0.52As solid solutions on an InP substrate are presented. The heterostructures contained quantum cascades emitting at a wavelength of 9.6 μm and cascades emitting at a wavelength of 7.6 μm. The high structural quality of the fabricated heterostructures is shown. The spontaneous emission and lasing spectra are investigated and the multimodal laser generation of stripe lasers at a wavelength of 7.6 μm is demonstrated.

AbstractThe results of experiments on the fabrication (by molecular-beam epitaxy) and investigation of the heterostructures of a two-frequency quantum-cascade laser produced on the basis of a heteropair of In_0.53Ga_0.47As/Al_0.48In_0.52As solid solutions on an InP substrate are presented. The heterostructures contained quantum cascades emitting at a wavelength of 9.6 μm and cascades emitting at a wavelength of 7.6 μm. The high structural quality of the fabricated heterostructures is shown. The spontaneous emission and lasing spectra are investigated and the multimodal laser generation of stripe lasers at a wavelength of 7.6 μm is demonstrated.

The results of the experimental study of stimulated emission of a quantum-cascade laser with a wavelength of 7.6 μm are presented in this paper. The dependence of the intensity of laser radiation on the duty cycle was obtained. The linearity of this dependence was maintained up to a duty cycle of 40%, thus achieving the quasi-continuous mode of operation of the quantum cascade laser at 110 K.

AbstractThe fabrication and study of the characteristics of a lattice-matched quantum cascade laser structure on an indium-phosphide substrate, designed for a wavelength of ~4.8 μm corresponding to one of the atmospheric windows are described. The heterostructure grown by molecular-beam epitaxy consisted of thirty cascades. Lasing was experimentally observed at temperatures up to 200 K at a wavelength coinciding with the calculated one, which confirms the high heterointerface quality and high precision of the layer thicknesses and active-region doping levels.

The paper demonstrates the generation of multistage quantum-cascade lasers (QCL) in the 7-8 mu m spectral range in the pulse generation mode. The active region structure we used is based on a two-phonon resonance scheme. The QCL heterostructure based on a heteropair of In0.53Ga0.47As/Al0.48In0.52As solid alloys was grown by molecular beam epitaxy and includes 50 identical stages. A waveguide geometry with top cladding with full top metallization (surface-plasmon quantum-cascade lasers) has been used. The developed QCLs have demonstrated multimodal generation in the 7-8 mu m spectral range in the pulse mode in the 78-250 K temperature range. The threshold current density for a 1.6 mm long laser and a 20 mu m ridge width amounted to similar to 2.8 kA/cm(2) at a temperature of 78 kappa. A temperature increase to 250 K causes a long-wave shift of the wavelength from 7.6 to 7.9 mu m and a j(th) increase to 5.0 kA/cm(2).

We present the results on growth, characterization and optical properties of quantum-cascade laser heterostructures grown by molecular-beam epitaxy. The double-phonon resonance design for forming of active region together with thick InP-based top cladding was used to increase the quantum-cascade laser performance. The results of electroluminescence studies of 4-cleaved samples are presented. The room temperature lasing at 8.0 um with threshold current density about 1.98 kA/cm2 was achieved.

A. V. Babichev, A. G. Gladyshev, E. S. Kolodeznyi, A. S. Kurochkin, G. S. Sokolovskii, V. E. Bougrov, L. Ya. Karachinsky, I. I. Novikov, V. V. Dudelev, V. N. Nevedomsky, S. O. Slipchenko, A. V. Lutetskiy, A. N. Sofronov, D.A. Firsov, L.E. Vorobjev, N. A. Pikhtin, A. Bousseksou, A. Yu. Egorov ITMO University, St. Petersburg, Russia, a.babichev@corp.ifmo.ru Connector Optics LLC, St. Petersburg, Russia Ioffe Institute, St. Petersburg, Russia Peter the Great St. Petersburg Polytechnic University, St. Petersburg, Russia Center of Nanoscience and Nanotechnology (C2N), Universit ́e, Paris Sud and Paris-Saclay, Orsay cedex, France