In this letter, we demonstrate the feasibility of building thin-film transistor (TFT) complementary metal-oxide-semiconductor (CMOS) operational amplifiers (op-amps) at low temperature (180°C) for large-area sensor applications. The classic two-stage Miller-compensated CMOS design is built using a-Si:H and pentacene TFTs. In addition, we have studied the impact of electrical stress-induced aging of TFTs on op-amp performance using two different kinds of biasing circuits.
Manuel Quevedo合作论文数1
Aritra Dey合作论文数Ira A. Fulton School of Engineering, Arizona State University1
Sameer M. Venugopal合作论文数1
David R. Allee合作论文数Flexible Display Center, Arizona State University1
Bruce Gnade合作论文数Department of Materials Science and Engineering, Erik Jonsson School of Engineering and Computer Science, The University of Texas at Dallas1
