A new approach is suggested to solve Auger-profiling deconvolution problem. The approach is based on the computer calculation of loop-like dependence of the Auger-signal amplitude of the chemical element under investigation versus the amplitude of another Auger-peak with the energy and electron escape depth different from the first ones. The comparison of the experimental data with the dependences calculated in frames of various model assumptions allows one to define the element depth distribution and artifacts.

A method is presented for studying the generation phenomena in strong fields (105 to 106 V/cm) under avalanche conditions. This allows one to determine the value of the initiating generation current (IGC) in the avalanche process, and to analyze its behaviour with respect to supplied voltage. Irregularities of the dark generation current arising with the injection of hot carriers into an insulator are shown to be due to the charge exchange between slow surface states and a space charge layer. A model of the generation center and its discharge behaviour is devised. According to this model the generation center depth and the energy position are found. Energy level of the generation center coincides with the peak of fast DOS extracted from quasi-static C-U measurements with an accuracy up to 0.1 eV. [Russian Text Ignored].

A system of differential equations describing an avalanche multiplication in MIS-structure is derived and numerically solved in frames of the uniform electric field along the interface and infinitely thin inverse layer. The dynamic characteristic of the current, time dependence of the multiplication coefficient, and the current-voltage characteristics are in a good agreement with the experimental results. [Russian Text Ignored].

It was found experimentally that a structure composed of a metal, a tunnel-thin insulator, and a semiconductor could be used as a memory element for optical storage and retrieval of data. The energy density of a light pulse required for switching was (0.5–1.5)×10−7 J/mm2. The photocurrent sensitivity was 0.2 A/W in the high-resistivity state and 0.02 A/W in the low-resistivity state (these results were obtained for light of the λ = 0.63 µ wavelength).