ASML NXE scanners are installed at customer factories and being used in high volume manufacturing (HVM) of leading semiconductor devices. EUV sources have improved performance and availability. In this paper we provide an overview of 13.5nm tin laserproduced-plasma (LPP) extreme-ultraviolet (EUV) sources enabling HVM for the most advanced nodes. Sources at customers operate at ~250 Watt power with high availability. Progress in Collector Lifetime and EUV Source performance is shown. High NA EUVL Scanners are in development for future nodes of device manufacturing, with new requirements for source geometry and few new requirements for source performance. In this paper we additionally discuss our progress on the High NA source towards shipment to the customer later this year. Finally, we provide an update on power scaling at ASMLs research systems including reaching a new 600W milestone for EUV Sources and the next steps towards even higher powers.

This chapter describes the development of a laser-produced-plasma (LPP) EUV source for advanced lithography applications in high-volume manufacturing (HVM) of semiconductor devices. EUVL is expected to succeed 193-nm immersion multipatterning technology for sub-10-nm critical-layer patterning. The most recent results from high-power systems targeted at the 250-W configuration are described to date. The requirements and technical challenges related to successful implementation of these technologies are outlined for the reader. Development of second-generation LPP light sources for ASML's NXE:3300B, NXE:3350B, and NXE:3400B (Fig. 3A.1) EUV scanners is complete, with approximately 15 units installed and operational at chipmaker customers. Different aspects and performance characteristics of the sources as well as related research and development progress at our facilities were already described in detail in several earlier publications. We have described initial dose stability results, power scaling and availability data for ASML's NXE:3100 first-generation sources, and have reported on several new development results. Ten first-generation NXE:3100 sources (Fig. 3A.2) have been operational for over five years; five systems were deployed to customers for use in process development at early adopters of EUVL technology. Key features of the NXE platform as well as scanner performance during the system introduction have already been reviewed in detail. In this chapter, we report on the characterization of source components that are critical to achieve the higher power required for the second-generation light sources to support EUV scanners at chipmaker production facilities. The NXE:3300B source drive laser uses a master oscillator power amplifier (MOPA) laser architecture with a pre-pulse mode of operation. The pre-pulse conditions the target from a liquid tin (Sn) droplet to a lower-density target at the focal plane of the laser focusing optics. A main (high-energy) pulse from the drive laser is then focused onto the prepulse-conditioned target, creating a highly ionized plasma that emits EUV radiation at wavelengths around 13.5 nm.

Over 50 EUV scanners are installed at customer factories and being used in high volume manufacturing (HVM) of leading semiconductor devices. The latest generation of EUV sources are operating at 250W while meeting all other requirements. Future EUV scanners are projected to require more stable EUV and higher powers >600W to meet throughput requirements. In this paper, we provide an overview of a the latest advances in the laboratory for tin laser-produced-plasma (LPP) extreme-ultraviolet (EUV) sources at 13.5nm enabling HVM at the N5 node and beyond, highlighting crucial EUV source technology developments needed to meet future requirements for EUV power and stability. This includes the performance of subsystems such as the Collector and the Droplet Generator.

This year, we expect EUV lithography to succeed 193 nm immersion multi-patterning technology for sub-10 nm critical layer patterning. In order to be successful, the EUV lithography source has to de...

In this paper, we provide an overview of state-of-the-art technologies for incoherent laser-produced tin plasma extreme-ultraviolet (EUV) sources at 13.5nm with performance enabling high volume semiconductor manufacturing (HVM). The key elements to development of a stable and reliable source that also meet HVM throughput requirements and the technical challenges for further scaling EUV power to increase productivity are described. Improvements in availability of droplet generation and the performance of critical subsystems that contribute to EUV collection optics lifetime toward the one tera-pulse level, are shown. We describe current research activities and provide a perspective for EUV sources towards the future ASML Scanners.

Experimental scaling relations of the optical depth are presented for the emission spectra of a tin-droplet-based, 1-μm-laser-produced plasma source of extreme-ultraviolet (EUV) light. The observed changes in the complex spectral emission of the plasma over a wide range of droplet diameters (16–65 μm) and laser pulse durations (5–25 ns) are accurately captured in a scaling relation featuring the optical depth of the plasma as a single, pertinent parameter. The scans were performed at a constant laser intensity of 1.4 × 1011 W/cm2, which maximizes the emission in a 2% bandwidth around 13.5 nm relative to the total spectral energy, the bandwidth relevant for industrial EUV lithography. Using a one-dimensional radiation transport model, the relative optical depth of the plasma is found to linearly increase with the droplet size with a slope that increases with the laser pulse duration. For small droplets and short laser pulses, the fraction of light emitted in the 2% bandwidth around 13.5 nm relative to the total spectral energy is shown to reach high values of more than 14%, which may enable conversion efficiencies of Nd:YAG laser light into—industrially—useful EUV radiation rivaling those of current state-of-the-art CO2-laser-driven sources.

In this paper, we provide an overview of various technologies for scaling tin laser-produced-plasma (LPP) extremeultraviolet (EUV) source performance to enable high volume manufacturing (HVM). We will show improvements to source architecture that facilitated the increase of EUV power from 100W to 250W, and the technical challenges for power scaling of key source parameters and subsystems. The performance of critical subsystems such as the Droplet Generator and Collector protection will be shown, with emphasis on stability and lifetime. Finally, we will describe current research activities and provide a perspective for LPP EUV sources towards 500W.

We provide an overview of laser-produced-plasma (LPP) extreme-ultraviolet (EUV) source performance to enable high volume manufacturing and improvements in various technologies for scaling output power of the source. Several companies have multiple systems and are ramping toward production, we will show current output and availability of sources and describe their readiness for HVM. We will show improvements to source architecture that facilitated the increase of EUV power to 250W, and the technical challenges for power scaling of key source parameters and subsystems. The performance of critical subsystems such as the Droplet Generator and Collector protection will be shown, with emphasis on stability and lifetime. Finally, we will describe current research activities and provide a perspective for LPP EUV sources towards 500W.

In this paper, we provide an overview of various challenges and their solutions for scaling laser-produced-plasma (LPP) extreme-ultraviolet (EUV) source performance to enable high volume manufacturing. We will discuss improvements to source architecture that facilitated the increase of EUV power from 100W to >200W, and the technical challenges for power scaling of key source parameters and subsystems. Finally, we will describe current power-scaling research activities and provide a forward looking perspective for LPP EUV sources towards 500W.

Extreme ultraviolet (EUV) lithography is expected to succeed in 193-nm immersion multi-patterning technology for -sub-10-nm critical layer patterning. In order to be successful, EUV lithography has to demonstrate that it can satisfy the industry requirements in the following critical areas: power, dose stability, etendue, spectral content, and lifetime. Currently, development of second-generation laser-produced plasma (LPP) light sources for the ASML's NXE: 3300B EUV scanner is complete, and first units are installed and operational at chipmaker customers. We describe different aspects and performance characteristics of the sources, dose -stability results, power scaling, and availability data for EUV sources and also report new development results.

ASML is committed to develop high power EUV source technology for use in EUV lithography for high-volume-manufacturing (HVM) of semiconductors. A stable dose controlled Laser-Produced-Plasma (LPP) EUV source has been successfully developed and introduced using a CO2 laser and small tin (Sn) droplets.

We present highlights from plasma simulations performed in collaboration with Lawrence Livermore National Labs. This modeling is performed to advance the rate of learning about optimal EUV generation for laser produced plasmas and to provide insights where experimental results are not currently available. The goal is to identify key physical processes necessary for an accurate and predictive model capable of simulating a wide range of conditions. This modeling will help to drive source performance scaling in support of the EUV Lithography roadmap. The model simulates pre-pulse laser interaction with the tin droplet and follows the droplet expansion into the main pulse target zone. Next, the interaction of the expanded droplet with the main laser pulse is simulated. We demonstrate the predictive nature of the code and provide comparison with experimental results.

Cymer-ASML is committed to develop high power EUV source technology based on CO2 laser-produced-plasma (LPP) for use in EUV lithography for high-volume-manufacturing of semiconductors. Stable dose controlled EUV power at intermediate focus (IF) has been successfully developed using a CO2 laser of high intensity, short pulse duration, high repetition, and high average power. Figure 1 shows 185 W at Intermediate Focus (IF) dose-controlled EUV source power and dose stability over a one hour demonstration. EUV pulse energy up to 5 mJ with 22% overhead is created at 50 kHz. Dose error is all smaller than 1%. This enables 100% good dies exposure.

Multiple NXE:3300 are operational at customer sites. These systems, equipped with a Numerical Aperture (NA) of 0.33, are being used by semiconductor manufacturers to support device development. Full Wafer Critical Dimension Uniformity (CDU) of 1.0 nm for 16nm dense lines and 1.1 nm for 20nm isolated space and stable matched overlay performance with ArF immersion scanner of less than 4nm provide the required lithographic performance for these device development activities. Steady progresses in source power have been achieved in the last 12 months, with 100Watts (W) EUV power capability demonstrated on multiple machines. Power levels up to 90W have been achieved on a customer machine, while 110W capability has been demonstrated in the ASML factory. Most NXE:3300 installed at customers have demonstrated the capability to expose 500 wafers per day, and one field system upgraded to the 80W configuration has proven capable of exposing 1,000 wafers per day. Scanner defectivity keeps being reduced by a 10x factor each year, while the first exposures obtained with full size EUV pellicles show no appreciable difference in CDU when compared to exposures done without pellicle. The 4th generation EUV system, the NXE: 3350, is being qualified in the ASML factory.

We have investigated the electronic structure and carrier dynamics of the topological insulator Bi2-xSbxTe3-ySey, for x = 0.5, y = 1.3 and x = 1, y = 2, using infrared spectroscopy. Our results show that both of these BSTS alloys are highly insulating in the bulk, with analysis of the infrared data indicating an upper limit to the carrier density of 4.4 x 10(17) cm(-3). Furthermore, analysis of the interband transitions of Bi1.5Sb0.5Te1.7Se1.3 revealed distinct band-structure critical points, which suggest high crystallographic order of our crystals. Motivated by the low carrier density and crystallographic order identified in these compounds, we searched for the Landau level transitions associated with the surface states through magneto-optical measurements in the far infrared range. We failed to observe any indications of the Landau level resonances at fields up to 8 T in sharp contrast with our earlier finding for a related Bi1-xSbx alloy. We discuss factors that may be responsible for suppressed magneto-optics response of these single crystals.

This paper describes the development and evolution of the critical architecture for a laser-produced-plasma (LPP) extreme-ultraviolet (EUV) source for advanced lithography applications in high volume manufacturing (HVM). In this paper we discuss the most recent results from high power sources in the field and testing on our laboratory based development systems, and describe the requirements and technical challenges related to successful implementation of those technologies on production sources. System performance is shown, focusing on pre-pulse operation with high conversion efficiency (CE) and with dose control to ensure high die yield. Finally, experimental results evaluating technologies for generating stable EUV power output for a high volume manufacturing (HVM) LPP source will be reviewed.

We have investigated the electronic structure and carrier dynamics of the topological insulator $\mathrm{Bi}{}_{2\ensuremath{-}x}\mathrm{Sb}{}_{x}\mathrm{Te}{}_{3\ensuremath{-}y}\mathrm{Se}{}_{y}$, for $x=0.5,y=1.3$ and $x=1,y=2$, using infrared spectroscopy. Our results show that both of these BSTS alloys are highly insulating in the bulk, with analysis of the infrared data indicating an upper limit to the carrier density of $4.4\ifmmode\times\else\texttimes\fi{}{10}^{17}$ ${\mathrm{cm}}^{\ensuremath{-}3}$. Furthermore, analysis of the interband transitions of $\mathrm{Bi}{}_{1.5}\mathrm{Sb}{}_{0.5}\mathrm{Te}{}_{1.7}\mathrm{Se}{}_{1.3}$ revealed distinct band-structure critical points, which suggest high crystallographic order of our crystals. Motivated by the low carrier density and crystallographic order identified in these compounds, we searched for the Landau level transitions associated with the surface states through magneto-optical measurements in the far infrared range. We failed to observe any indications of the Landau level resonances at fields up to 8 T in sharp contrast with our earlier finding for a related $\mathrm{Bi}{}_{1\ensuremath{-}x}\mathrm{Sb}{}_{x}$ alloy. We discuss factors that may be responsible for suppressed magneto-optics response of these single crystals.

We investigate infrared manifestations of the pseudogap in the prototypical cuprate and pnictide superconductors, YBa2Cu3Oy and BaFe2As2 (Ba122) systems. We find remarkable similarities between the spectroscopic features attributable to the pseudogap in these two classes of superconductors. The hallmarks of the pseudogap state in both systems include a weak absorption feature at about 500 cm(-1) followed by a featureless continuum between 500 and 1500 cm(-1) in the conductivity data and a significant suppression in the scattering rate below 700-900 cm(-1). The latter result allows us to identify the energy scale associated with the pseudogap Delta PG. We find that in the Ba122-based materials the superconductivity-induced changes of the infrared spectra occur in the frequency region below 100-200 cm(-1), which is much lower than the energy scale of the pseudogap. We performed theoretical analysis of the scattering rate data of the two compounds using the same model, which accounts for the effects of the pseudogap and electron-boson coupling. We find that the scattering rate suppression in Ba122-based compounds below Delta PG is solely due to the pseudogap formation, whereas the impact of the electron-boson coupling effects is limited to lower frequencies. The magnetic resonance modes used as inputs in our modeling are found to evolve with the development of the pseudogap, suggesting an intimate correlation between the pseudogap and magnetism.