11:20 – 11:40 Mapping the Operational Landscape of microRNAs in Synthetic Gene Circuits Tyler Quarton, Leonidas Bleris Bioengineering, The University of Texas at Dallas MicroRNAs are a class of short, noncoding RNAs that are ubiquitous modulators of gene expression, with roles in development, homeostasis, and disease. Engineered microRNAs are now frequently used as regulatory modules in synthetic biology. Moreover, synthetic gene circuits equipped with engineered microRNA targets with perfect complementarity to endogenous microRNAs establish an interface with the endogenous milieu at the single-cell level. The function of engineered microRNAs and sensor systems is typically optimized through extensive trial-and-error. Here, using a combination of synthetic biology experimentation in human embryonic kidney cells and quantitative analysis, we investigate the relationship between input genetic template abundance, microRNA concentration, and output under microRNA control. We provide a framework that employs the complete operational landscape of a synthetic gene circuit and enables the stepwise development of mathematical models. We derive a phenomenological model that recapitulates experimentally observed nonlinearities and contains features that provide insight into the microRNA function at various abundances. Our work facilitates the characterization and engineering of multi-component genetic circuits and specifically points to new insights on the operation of microRNAs as mediators of endogenous information and regulators of gene expression in synthetic biology.

Van der Waals heterostructures consisting of two-dimensional materials offer a platform to obtain materials by design and are very attractive owing to unique electronic states. Research on 2D van der Waals heterostructures (vdWH) has so far been focused on fabricating individually stacked atomically thin unary or binary crystals. Such systems include graphene, hexagonal boron nitride, and members of the transition metal dichalcogenide family. Here we present our experimental study of the optoelectronic properties of a naturally occurring vdWH, known as franckeite, which is a complex layered crystal composed of lead, tin, antimony, iron, and sulfur. We present here that thin film franckeite (60 nm < d < 100 nm) behaves as a narrow band gap semiconductor demonstrating a wide-band photoresponse. We have observed the band-edge transition at ∼1500 nm (∼830 meV) and high external quantum efficiency (EQE ≈ 3%) at room temperature. Laser-power-resolved and temperature-resolved photocurrent measurements reveal that the photocarrier generation and recombination are dominated by continuously distributed trap states within the band gap. To understand wavelength-resolved photocurrent, we also calculated the optical absorption properties via density functional theory. Finally, we have shown that the device has a fast photoresponse with a rise time as fast as ∼1 ms. Our study provides a fundamental understanding of the optoelectronic behavior in a complex naturally occurring vdWH, and may pave an avenue toward developing nanoscale optoelectronic devices with tailored properties.

Large array fabrication of high quality photodetectors derived from synthetically grown monolayer transition metal dichalcogenides is highly desired and important for a wide range of nanophotonic applications. We present here large array fabrication of monolayer MoS2 photodetectors on sapphire substrates through an efficient process, which includes growing large scale monolayer MoS2 via chemical vapor deposition (CVD) and multi-step optical lithography for device patterning and high quality metal electrode fabrication. In every measured device, we observed the following universal features: (i) negligible dark current (Idark≤10 fA), (ii) sharp peaks in photocurrent at ∼1.9 eV and ∼2.1 eV attributable to the optical transitions due to band edge excitons, and (iii) a rapid onset of photocurrent above ∼2.5 eV peaked at ∼2.9 eV due to an excitonic absorption originating from the van Hove singularity of MoS2. We observe a low (≤300%) device-to-device variation of photoresponsivity. Furthermore, we observe a very fast DC time response of ∼0.5 ms, which is two orders of magnitude faster than other reported CVD grown 1L-MoS2 based photodetectors. The combination of large-array device fabrication, high sensitivity, and high speed offers great potential for applications in photonics.