One of the main interests of 2D materials is their ability to be assembled with many degrees of freedom for tuning and manipulating excitonic properties. There is a need to understand how the structure of the interfaces between atomic layers influences exciton properties. Here we use cathodoluminescence and time-resolved cathodoluminescence experiments to study how excitons interact with the interface between two twisted hexagonal boron nitride (hBN) crystals with various angles. An efficient capture of free excitons by the interface is demonstrated, which leads to a population of long-lived and interface-localized (2D) excitons. Temperature dependent experiments indicate that for high twist angles, these excitons localized at the interface further undergo a selftrapping. It consists in a distortion of the lattice around the exciton on which the exciton traps itself. Our results suggest that this exciton-interface interaction causes the broad 4-eV optical emission of highly twisted hBN-hBN structures. Exciton self-trapping is finally discussed as a common feature of sp2 hybridized boron nitride polytypes and nanostructures due to the ionic nature of the B-N bond and the small size of their excitons.

Despite its simple crystal structure, layered boron nitride features a surprisingly complex variety of phonon-assisted luminescence peaks. We present a combined experimental and theoretical study on ultraviolet-light emission in hexagonal and rhombohedral bulk boron nitride crystals. Emission spectra of high-quality samples are measured via cathodoluminescence spectroscopy, displaying characteristic differences between the two polytypes. These differences are explained using a fully first-principles computational technique that takes into account radiative emission from “indirect”, finite-momentum, excitons via coupling to finite-momentum phonons. We show that the differences in peak positions, number of peaks and relative intensities can be qualitatively and quantitatively explained, once a full integration over all relevant momenta of excitons and phonons is performed.

In the wide world of 2D materials, hexagonal boron nitride (hBN) holds a special place due to its excellent characteristics. In addition to its thermal, chemical and mechanical stability, hBN demonstrates high thermal conductivity, low compressibility, and wide band gap around 6 eV, making it promising candidate for many groundbreaking applications and more specifically for optoelectronic devices. Millimeters scale hexagonal boron nitride crystals are obtained through a disruptive dual method (PDC/PCS) consisting in a complementary coupling of the Polymer Derived Ceramics route and a Pressure-Controlled Sintering process. In addition to their excellent chemical and crystalline quality, these crystals exhibit a free exciton lifetime of 0.43 ns, as determined by time-resolved cathodoluminescence measurements, confirming their interesting optical properties. To go further in applicative fields, hBN crystals are then exfoliated, and resulting Boron Nitride NanoSheets (BNNSs) are used to encapsulate transition metal dichalcogenides (TMDs). Such van der Waals heterostructures are tested by optical spectroscopy. BNNSs do not luminesce in the emission spectral range of TMDs and the photoluminescence width of the exciton at 4K is in the range 2-3 meV. All these results demonstrate that these BNNSs are relevant for future opto-electronic applications.

2D boron nitride (2D-BN) was synthesized by gas-source molecular beam epitaxy on polycrystalline and monocrystalline Ni substrates using gaseous borazine and active nitrogen generated by a remote plasma source. The excess of nitrogen atoms allows to overcome the thickness self-limitation active on Ni when using borazine alone. The nucleation density and the shape of the 2D-BN domains are clearly related to the Ni substrate preparation and to the growth parameters. Based on spatially-resolved photoemission spectroscopy and on the detection of the π plasmon peak, we discuss the origin of the N1s and B1s components and their relationship with an electronic coupling at the interface. After optimization of the growth parameters, a full 2D-BN coverage is obtained, although the material thickness is not evenly distributed. The 2D-BN presents a granular structure on (111) oriented Ni grains, showing a rather poor cristallographic quality. On the contrary, high quality 2D-BN is found on (101) and (001) Ni grains, where triangular islands are observed whose lateral size is limited to ∼20μm.

In the wide world of 2D materials, hexagonal boron nitride (hBN) holds a special place due to its excellent characteristics. In addition to its thermal, chemical and mechanical stability, hBN demonstrates high thermal conductivity, low compressibility, and wide band gap around 6 eV, making it a promising candidate for many groundbreaking applications and more specifically in van der Waals heterostructures. Millimeters scale hBN crystals are obtained through a disruptive dual method (polymer derived ceramics (PDC)/pressure-controlled sintering (PCS)) consisting in a complementary coupling of the PDC route and a PCS process. In addition to their excellent chemical and crystalline quality, these crystals exhibit a free exciton lifetime of 0.43 ns, as determined by time-resolved cathodoluminescence measurements, confirming their interesting optical properties. To go further in applicative fields, hBN crystals are then exfoliated, and resulting boron nitride nanosheets (BNNSs) are used to encapsulate transition metal dichalcogenides (TMDs). Such van der Waals heterostructures are tested by optical spectroscopy. BNNSs do not luminesce in the emission spectral range of TMDs and the photoluminescence width of the exciton at 4 K is in the range 2–3 meV. All these results demonstrate that these BNNSs are of high quality and relevant for future opto-electronic applications.

In the context of photonic quantum information science, hexagonal boron nitride (hBN) has recently emerged as a very promising material. The bidimensional character of hBN renders it attractive for the realisation of heterostructures and integrated photonic devices. Moreover, this wide-gap material has been recently shown to host colour centres with appealing optical properties in the red and near infrared regions [1] . However these deep defects suffer from the wide distribution of their emission wavelength and a random spatial location [2] , [3] . These limitations hinder the scalability of the system for applications.

Single photon emitters (SPEs) in low-dimensional layered materials have recently gained a large interest owing to the auspicious perspectives of integration and extreme miniaturization offered by this class of materials. However, accurate control of both the spatial location and the emission wavelength of the quantum emitters is essentially lacking to date, thus hindering further technological steps towards scalable quantum photonic devices. Here, we evidence SPEs in high purity synthetic hexagonal boron nitride (hBN) that can be activated by an electron beam at chosen locations. SPE ensembles are generated with a spatial accuracy better than the cubed emission wavelength, thus opening the way to integration in optical microstructures. Stable and bright single photon emission is subsequently observed in the visible range up to room temperature upon non-resonant laser excitation. Moreover, the low-temperature emission wavelength is reproducible, with an ensemble distribution of width 3 meV, a statistical dispersion that is more than one order of magnitude lower than the narrowest wavelength spreads obtained in epitaxial hBN samples. Our findings constitute an essential step towards the realization of top-down integrated devices based on identical quantum emitters in 2D materials.

Hexagonal boron nitride nanosheets (BNNSs) are promising 2D materials due to their exceptional chemical and thermal stabilities together with their electrical insulation properties. A combined synthesis method involving the polymer-derived ceramics (PDCs) route and the spark plasma sintering (SPS) process is proposed, leading to well-crystallized and pure layered h-BN crystals, prone to be exfoliated into large BNNSs. Here we focus more specifically on the influence of two key parameters of the process to be optimized: the Li3N concentration (0–10 wt%) and the SPS temperature (1200 °C–1950 °C). The presence of Li3N, added as crystal promoter in the pre-ceramic powder, significantly improves the crystallinity level of the product, as evidenced by XRD, SEM and Raman spectrometry. SPS temperature strongly modifies the size of the resulting h-BN flakes. The influence of SPS temperature on both purity and crystallinity is studied using cathodoluminescence. h-BN flakes larger than 200 μm2 (average flake area) are obtained. Few-layered BNNSs are successfully isolated, through exfoliation process.

A quantitative analysis of the excitonic luminescence efficiency in hexagonal boron nitride (h-BN) is carried out by cathodoluminescence in the ultraviolet range and compared with zinc oxide and diamond single crystals. A high quantum yield value of ∼50% is found for h-BN at 10 K comparable to that of direct band-gap semiconductors. This bright luminescence at 215 nm remains stable up to room temperature, evidencing the strongly bound character of excitons in bulk h-BN. Ab initio calculations of the exciton dispersion confirm the indirect nature of the lowest-energy exciton whose binding energy is found equal to 300±50  meV, in agreement with the thermal stability observed in luminescence. The direct exciton is found at a higher energy but very close to the indirect one, which solves the long debated Stokes shift in bulk h-BN.

Known as a prominent recombination path at high excitation densities, exciton-exciton annihilation (EEA) is evidenced in bulk hexagonal boron nitride (hBN) by cathodoluminescence at low temperature. Thanks to a careful tune of the the exciton density by varying either the current or the focus of the incident electron beam, we could estimate an EEA rate of 2$\times$10$^{-6}$ cm$^{3}$.s$^{-1}$ at $T=10$ K, the highest reported so far for a bulk semiconductor. Expected to be even stronger in nanotubes or atomic layers, EEA probablly contributes to the luminescence quenching observed in low-dimensionality BN materials.

hBN has recently become a strategic material for the fabrication of 2D heterostructures, where it is stacked with graphene or transition metal dichalcogenides. Its optical properties though remain unusual among semiconductors and have been debated for 15 years. hBN indeed exhibits a high luminescence efficiency in the deep ultra-violet despite an indirect electronic structure. In this work [1], we quantitatively determined the luminescence efficiency of high quality hBN crystals, thanks to the calibration of a cathodoluminescence set-up. The internal quantum yield of exciton recombinations in hBN is found as high as 50% at 10K, close to the values observed for direct bandgap semiconductors. Contrary to diamond, the luminescence remains stable up to room temperature in hBN, indicating a higher stability of excitons. Ab-initio calculations under the Bethe Salpeter approach confirms the lowest-energy exciton in hBN is indirect, with a high stability characterized by a 300 meV binding energy. Moreover, the absorption maximum measured at 6.03 eV is attributed to a direct exciton, located only slightly above the indirect one at 5.96 eV, solving the Stoke shift issue in hBN.

A quantitative analysis of the excitonic luminescence efficiency in hexagonal boron nitride (hBN) is carried out by cathodoluminescence and compared with two other wide bandgap semiconductors, zinc oxide and diamond. A high value of ~15% is found at 10 K for the hBN internal quantum yield, almost two orders of magnitude higher than for diamond, although both crystals present indirect bandgaps. The hBN luminescence efficiency remains stable up to room temperature consistently with tightly bound excitons. Ab initio calculations of the exciton dispersion in bulk hBN confirm the lowest-energy exciton is indirect, with a theoretical binding energy equal to 300 meV in agreement with the observed thermal stability of luminescence. The direct exciton is found with a binding energy of 670 meV in good agreement with previous reports. Its energy turns out to be ~100 meV above the indirect one and finally solves the long-standing debate on the Stoke shift in bulk hBN. The benefits of these findings for the understanding of atomic BN layer properties are discussed.

In this paper, we report a study on self-assembly of Au colloids assisted by polystyrene (PS)-polymethyl methacrylate (PMMA) block copolymer templates. Etching PMMA cylindrical domains of PS-PMMA thin films provides large-scale arrays of holes in which 12nm Au colloids may fall into. We demonstrate that the holes' functionalisation with aminosilanes favours the deposition of the Au colloids into the holes. The extinction spectroscopy measurements demonstrate that the Au NPs which are self-assembled using this process do not present any aggregation. Such a process should pave the way for designing plasmonic devices like optical nanosensors.

We report here an original single-step process for the synthesis and self-organization of gold colloids by simply incorporating gold salts into a solution prepared using polystyrene (PS)-polymethylmethacrylate copolymer and thiolated PS with propylene glycol methyl ether acetate as a solvent. The spin-coating and annealing of this solution then allows the formation of PS domains. Depending on the polymer concentration of the as-prepared solution, there can be either one or several gold nanoparticles (Au NPs) per PS domain. For high concentrations of Au NPs in PS domains, the coupling between plasmonic NPs leads to the observation of a second peak in the optical extinction spectrum. Such a collective effect could be relevant for the development of optical strain sensors in the near future.