Cryo-computing - both classical and quantum, is severely limited by the absence of a suitable cryo-memory. The challenges both in terms of energy efficiency and speed have been known for decades, but so far conventional technologies have not been able to deliver adequate performance. Here we present a non-volatile memory device which incorporates a superconducting nanowire and an all-electronic charge configuration memristor (CCM) based on switching between charge-ordered states in a layered dichalcogenide material. We numerically investigate the time-dynamics and current-voltage characteristics of such a device by modelling of the superconducting order parameter. The observed current-voltage response is faithfully reproduced by fabricated devices using a NbTiN nanowire and a 1T-TaS2 CCM element. The inherent ultrahigh energy efficiency and speed of the device, which is in principle compatible with single flux quantum logic, leads to a promising memory concept for use in cryo-computing and quantum computing peripheral devices.

The quest for superconductivity created by light extends for more than half a century, yet direct evidence of a true zero-resistance state - whose macroscopic quantum phase coherence is both created and controlled by light - has remained elusive. Here we report for the first time on a complex but robust light-programmable superconducting (LiPS) state at an aluminium-silicon heterojunction that is created and fully controlled with femtosecond laser pulses. The superconducting critical temperatures - ranging from 1.8 to 8.5 K, can be increased or erased at will by the application of tailored pulse sequences. At low temperatures the LiPS state shows features characteristic of a Berezinski-Kosterlitz-Thouless topological transition, but another distinct state appears at temperatures above 2 K, which shows clear signatures of quantum phase disorder. In the presence of a magnetic field we observe behaviour characteristic of vortex pinning and creep consistent with the 2-dimensional (2D) nature of the phase coherent system. The origin of the LiPS effect is attributed to light pulse control of the Moire-like superlattice of misfit dislocations (MDs) arising from discommensurations between the Al and Si lattices which is visible by high-resolution electron microscopy. We show how light pulses can be used to control the superlattice periodicity and highlight the appearance of topologically protected soliton-like kinks along the dislocation lines, important for imparting controllable metastability to the system. The demonstration of LiPS paves the way for designing metastable superconducting devices with controllable phase-coherence, enabling applications such as light-engineered quantum circuits, local gap tuning in quantum processors, and optically switchable superconducting devices.

1T-TaS2 is a prototype layered material with a rich phase diagram that includes multiple charge density wave (CDW) transitions and technologically important metastable states. It also supports a superconducting phase induced by hydrostatic pressure, cation substitution, intercalation, or doping. Thin 1T-TaS2 crystals deposited on various substrates exhibit transition temperatures that are strongly dependent on the substrate-induced strain, and depart from bulk transition temperatures in a way that is not clearly understood at present. Here we show that thin polycrystalline films of 1T-TaS2 grown by molecular beam epitaxy on (LaAlO3)0.3(Sr2TaAlO6)0.7 (LSAT) substrates have a suppressed CDW transition to a commensurate phase. Instead, resistivity, magnetoresistance, and critical current measurements reveal metallic behavior with an onset to a superconducting state below $$\:{T}_{c}=3.8$$ K. The appearance of superconductivity is suggested to be driven by the in-plane tensile differential strain exerted on the 1T-TaS2 film by the LSAT substrate during cooling, which in turn results in a strongly amplified out-of-plane compressive strain triggered by the Poisson effect, combined with traceable signs of intercalation with La and Sr atoms from the substrate. The experiments suggest that tensile substrate strain may be usefully applied for achieving desirable Functional properties that are otherwise accessible through hydrostatic pressure, and generally for investigating of the effects of anisotropic strain in 2D materials and monolayer stacks or heterostructures.

In-operando characterization of van der Waals (vdW) devices using surface-sensitive methods provides critical insights into phase transitions and correlated electronic states. Yet, integrating vdW materials in functional devices while maintaining pristine surfaces is a key challenge for combined transport and surface-sensitive experiments. Conventional lithographic techniques introduce surface contamination, limiting the applicability of state-of-the-art spectroscopic probes. We present a stencil lithography-based approach for fabricating vdW devices, producing micron-scale electrical contacts, and exfoliation in ultra-high vacuum. The resist-free patterning method utilizes a shadow mask to define electrical contacts and yields thin flakes down to the single-layer regime via gold-assisted exfoliation. As a demonstration, we fabricate devices from 1T-TaS_2 flakes, achieving reliable contacts for application of electrical pulses and resistance measurements, as well as clean surfaces allowing for angle-resolved photoemission spectroscopy. The approach provides a platform for studying the electronic properties of vdW systems with surface-sensitive probes in well-defined device geometries.

Van der Waals materials exhibit a variety of states that can be switched with low power at low temperatures, offering a viable cryogenic 'flash memory' required for the classical control electronics for solid-state quantum information processing. In 1T-TaS2, a non-volatile metallic 'hidden' state can be induced from an insulating equilibrium charge-density wave ground state using either optical or electrical pulses. Given that conventional memristors form localized, filamentary channels which support the current, a key question for design concerns the geometry of the conduction region in highly energy-efficient 1T-TaS2 devices. Here, we report in operando micro-beam X-ray diffraction, fluorescence, and concurrent transport measurements, allowing us to spatially image the non-thermal hidden state induced by electrical switching of 1T-TaS2. The results reveal a long-range ordered switching region that extends well below the electrodes, implying that the self-organized, collective growth of the hidden phase is driven by charge rearrangement and concomitant lattice strain. Our combination of techniques showcases the potential of non-destructive, three-dimensional X-ray imaging to study bulk switching in microscopic detail, exemplified here by electrical control of the charge-density wave state of a van der Waals material.

The absence of efficient light modulators for extreme ultraviolet (EUV) and X-ray photons considerably limits their real-life application, particularly when even slight complexity of the beam patterns is required. Here we report on a novel approach to reversible imprinting of a holographic mask in an electronic Wigner crystal material with a sub-90-nm feature size. The structure is imprinted on a sub-picosecond timescale using EUV laser pulses, and acts as a high-efficiency diffraction grating that deflects EUV or soft X-ray light. The imprinted nanostructure is stable after the removal of the exciting beams at low temperatures, but can be easily erased by a single heating beam. Modelling shows that the efficiency of the device can exceed 1%, approaching state-of-the-art etched gratings, but with the benefit of being programmable and tunable over a large range of wavelengths. The observed effect is based on the rapid change of lattice constant upon transition between metastable electronically ordered phases in a layered transition metal dichalcogenide. The proposed approach is potentially useful for creating tunable light modulators in the EUV and soft X-ray spectral ranges.

Metastability of many-body quantum states is rare and still poorly understood. An exceptional example is the low-temperature metallic state of the layered dichalcogenide 1T-TaS 2 in which electronic order is frozen after external excitation. Here we visualize the microscopic dynamics of injected charges in the metastable state using a multiple-tip scanning tunnelling microscope. We observe non-thermal formation of a metastable network of dislocations interconnected by domain walls, that leads to macroscopic robustness of the state to external thermal perturbations, such as small applied currents. With higher currents, we observe annihilation of dislocations following topological rules, accompanied with a change of macroscopic electrical resistance. Modelling carrier injection into a Wigner crystal reveals the origin of formation of fractionalized, topologically entangled networks, which defines the spatial fabric through which single particle excitations propagate. The possibility of manipulating topological entanglement of such networks suggests the way forward in the search for elusive metastable states in quantum many body systems.

Current trends in data processing have given impetus for an intense search of new concepts of memory devices with emphasis on efficiency, speed, and scalability. A promising new approach to memory storage is based on resistance switching between charge-ordered domain states in the layered dichalcogenide 1T-TaS2. Here we investigate the energy efficiency scaling of such charge configuration memory (CCM) devices as a function of device size and data write time τW as well as other parameters that have bearing on efficient device operation. We find that switching energy efficiency scales approximately linearly with both quantities over multiple decades, departing from linearity only when τW approaches the ∼0.5 ps intrinsic switching limit. Compared to current state of the art memory devices, CCM devices are found to be much faster and significantly more energy efficient, demonstrated here with two-terminal switching using 2.2 fJ, 16 ps electrical pulses.

Cryo-computing - both classical and quantum, is severely limited by the absence of a suitable cryo-memory. The challenge both in terms of energy efficiency and speed have been known for decades, but so far conventional technologies have not been able to deliver adequate performance. Here we present a novel non-volatile memory device which incorporates a superconducting nanowire and an all-electronic charge configuration memristor (CCM) based on switching between charge-ordered states in a layered dichalcogenide material. We investigate the time-dynamics and current-voltage characteristics of such a device fabricated using a NbTiN nanowire and a 1T-TaS2 CCM. The observed dynamical response of the device is faithfully reproduced by modelling of the superconducting order parameter showing versatility of application. The inherent ultrahigh energy efficiency and speed of the device, which is compatible with single flux quantum logic, leads to a promising new memory concept for use in cryo-computing and quantum computing peripheral devices.

Progress in high-performance computing demands significant advances in memory technology. Among novel memory technologies that promise efficient device operation on a sub-ns timescale, resistance switching between charge ordered phases of 1T-TaS2 has shown to be potentially useful for development of high-speed, energy efficient nonvolatile memory devices. Measurement of the electrical operation of such devices in the picosecond regime is technically challenging and hitherto still largely unexplored. Here, we use an optoelectronic “laboratory-on-a-chip” experiment for measurement of ultrafast memory switching, enabling accurate measurement of electrical switching parameters with 100 fs temporal resolution. Photoexcitation and electro-optic sampling on a (Cd,Mn)Te substrate are used to generate and, subsequently, measure electrical pulse propagation with intra-band excitation and sub-gap probing, respectively. We demonstrate high contrast nonvolatile resistance switching from high to low resistance states of a 1T-TaS2 device using single sub-2 ps electrical pulses. Using detailed modeling, we find that the switching energy density per unit area is exceptionally small, EA= 9.4 fJ/μm2. The speed and energy efficiency of an electronic “write” process place the 1T-TaS2 devices into a category of their own among new generation nonvolatile memory devices.

Charge configuration memory (CCM) device operation is based on the controllable reconfiguration of electronic domains in a charge-density-wave material. Since the dominant effect involves the manipulation of electrons rather than atoms, the devices can display sub-picosecond switching speed and ultralow, few femtojoule switching energy. The mechanisms involved in switching between domain states of different electrical resistances are highly non-trivial and involve trapping non-equilibrium charges within topologically protected domain states. Here, we discuss the underlying physics that are deemed essential for the operation of CCM devices, focusing on the unusual asymmetry between non-thermal "write" processes and thermal "erase" processes from the point of view of the mechanism in relation to the thermal dynamics.

Computer technologies have advanced unimaginably over the last 70 years, mainly due to scaling of electrical components down to the nanometre regime and their consequential increase in density, speed and performance. Decrease in dimensions also brings about many unwanted side effects, such as increased leakage, heat dissipation and increased cost of production. However, it seems that one of the biggest factors limiting further progress in high-performance computing is the increasing difference in performance between processors and memory units, a so-called processor-memory gap. To increase the efficiency of memory devices, emerging alternative non-volatile memory (NVM) technologies could be introduced, promising high operational speed, low power consumption and high density. This review focuses on a conceptually unique non-volatile Charge Configuration Memory (CCM) device, which is based on resistive switching between different electronic states in a 1T-TaS 2 crystal. CCM demonstrates ultrafast switching speed <16 ps, very low switching energy (2.2 fJ/bit), very good endurance and a straightforward design. It operates at cryogenic temperatures, which makes it ideal for integration into emerging cryo-computing and other high-performance computing systems such as superconducting quantum computers.

Non-volatile magnetic storage, from 1940s magnetic core to present day racetrack memory and magnetic anisotropy switching devices rely on the metastability of magnetic domains to store information. However, the inherent inefficiency of converting the information-carrying charge current into magnetization switching sets fundamental limitations in energy consumption. Other non-magnetic non-volatile memories such as memristors, ferroelectric memory and phase change memory devices also rely on energetically relatively costly crystal structural rearrangements to store information. In contrast, conventional electronic charge states in quantum dots for example, can be switched in femtoseconds with high efficiency, but any stored information dissipates rapidly. Here we present a radically different approach in the form of a charge-configuration memory (CCM) device that relies on charge-injection-driven electronic crystal melting and topological protection of the resulting electronic domain configurations of a two-dimensional electronic crystal to store information. With multiprobe scanning tunneling microscopy (STM) we show microscopically, within an operational device, how dislocations in the domain ordering lead to metastability by a mechanism that is topologically equivalent to magnetic bubble memory. The devices have a very small switching energy (<2.2 fJ/bit), ultrafast switching speed of <11 ps and operational range over more than 3 orders of magnitude in temperature (<250 mK 190 K). Together with their simple functionality, a large resistance switching ratio, straightforward fabrication and impressive endurance, CCM devices introduce a new memory paradigm in emerging cryo-computing and other high-performance computing applications that require ultrahigh speed and low energy consumption.

Že nekaj casa smo v iskanju novih racunalniskih tehnologij, ki bi nam omogocile nadaljnje izboljsave na tem podrocju. Eden od glavnih sestavnih delov je tudi spomin, ki je v zadnjih letih doživel precej napredka, predvsem na podlagi novih tehnologij. Primer tega je tudi spominski element, ki je obravnavan v tem delu. Glavni del elementa je material TaS2, v katerem se vzpostavi t. i. val gostote naboja oz. CDW (ang. charge density wave). Sistem doživi fazni prehod in dvig elektricne upornosti za vec kot dekado. Vrednost upornosti je mogoce upravljati s pomocjo elektricnih pulzov. Za preklop v stanje nizke upornosti se uporabi kratek pulz nizke napetosti. Temu prehodu pravimo zapis oz. write. Pri izbrisu oz. erase se poslužimo gretja materiala, ki se povrne v osnovno stanje. To izvedemo z daljsim pulzom nizke napetosti, upornost se spremeni z nizke nazaj na visoko vrednost. Magistrska naloga predstavi teoreticno ozadje materiala TaS2, CDW pojava ter zapisa in izbrisa. Nato je na vrsti eksperimentalni del, v katerem prikaže sintezo materiala, nacrtovanje in izdelavo testnega vezja ter koncni produkt. Sledijo meritve in rezultati, s katerimi pokažemo preklopne lastnosti in stabilnost elementa, ter prikaz izdelave vecbitnega prototipa. Na koncu so zbrane se koncne ugotovitve in primerjava z ostalimi vrstami spomina.