Superconducting resonators are widely used in fields spanning from quantum computing to electron spin resonance (ESR) spectroscopy. With the goal of realizing superconducting resonators, a broad variety and combination of superconducting materials, substrates and fabrication processes have been used and thoroughly reported in the literature. High temperature superconductors such as YBCO and low temperature superconductors such as Nb, NbN, NbTiN and Al are the major actors in the domain. In this work, we investigate the possibility to extend the family of suitable low temperature superconductors for the realization of planar superconducting microwave resonators for future ESR applications. In particular, this study focuses on NbTi, a widely used material to realize superconducting cables but not investigated for planar resonating structures at GHz frequencies. A 150 nm thick film of NbTi is sputtered and patterned on top of an Al2O3 substrate. For devices resonating around 6.8 GHz quality factors greater than 10,000 are observed at 3 K and in magnetic fields up to 250 mT.

Recent advances in CMOS scaling have made circuits more and more sensitive to errors and dysfunction caused by ionizing radiation, even at ground level, requiring accurate modeling of such effects. Besides generation, transport, and collection of radiation-induced excess carriers, another phenomenon, called funneling, has to be modeled for an accurate prediction of soft errors. The funneling effect occurs when the radiation track crosses a space charge region and generates excess carriers with a density higher than the doping close to it. These carriers distort the electric field of the space charge region, deeply changing the transport mechanism, from diffusion in a field-free semiconductor to drift. The objective of this work is to include funneling as part of the generalized lumped devices model in order to obtain a complete tool for SPICE-compatible simulations of single-event effects (SEEs). The latter approach has been recently proposed to simulate radiation-induced charges in the silicon substrate and is based on the so-called generalized lumped devices that simulate charge generation, propagation, and collection using standard circuit simulators. The generalized devices are here extended to include funneling and used to simulate an alpha particle impinging on the bulk of nMOS and pMOS transistors. The results obtained are validated with TCAD numerical simulations. Finally, an static random-access memory (SRAM) struck by an alpha particle is analyzed. The model predicts that the occurrence of a soft error, i.e., flipping of memory state, may depend on whether or not there is funneling. This justifies the need for accurate modeling of funneling phenomena to predict SEEs in ICs.