The structural and magnetic properties of MnSb layers grown on two differently oriented GaAs substrates are reported. The MnSb compounds grow nonhomogenously both on GaAs(111)B and on GaAs(100) substrates. In x-ray diffraction studies the formation of two epitaxial domains is observed depending on the crystallographic orientation of the substrate. The observed diffusion of Ga atoms from the substrate to the layers results in the formation of an additional Mn-rich cubic phase of GaMnSb. In the case of the (100) oriented substrate, the diffusion of Mn into the substrate was additionally found. Traces of other phases were also noticed. The complex morphology of the layers is found to influence their magnetic properties. Magnetic force microscopy images revealed an inhomogenous distribution of the magnetic force gradient on the surface and the formation of magnetic domains in the samples. X-ray absorption studies of the chemical bonding and local atomic structure around Mn atoms confirmed high structural and chemical disorder in the samples. The chemical bonding of the dominating fraction of Mn atoms is found, however, similar to that in the reference MnSb powder. The x-ray magnetic circular dichroism measurements reveal an enhanced orbital moment and a reduced spin moment, which is most likely caused by the presence of different phases and a Mn-rich surface in the investigated samples.

Ba6WNb2O14 appears at least in two different polymorphs with the phase transition around 1200°C. The X-ray powder diffraction pattern of high-temperature modification corresponds merely to the niobium homologue of the hexagonal Ba6WTa2O14 (ICDD file #35-0187), while the XRD spectra of the low-temperature modification is closely related to the orthorhombic β-Ba4Nb2O9 (ICDD file #35-1155). In order to understand the crystal chemistry governing the formation of Ba6WNb2O14, the ceramic prepared by a conventional solidstate reaction, was analyzed by means of X-ray powder diffraction, scanning electron microscopy and transmission electron microscopy. The analysis of microwave dielectric data revealed a low negative coefficient of resonant frequency varying from -25 to -18 ppm/K, dielectric permittivity in the range of 15-20, and the quality factor Qxf distributed over 18 000 GHz.

It is now well accepted that epitaxial strains can be used to stabilize out of equilibrium phases [1].This approach is especially interesting in the case of functional oxide thin films usually subject to many solid-state phase transitions as a function of external constrains (i.e temperature or pressure variations).The precise evaluation of strains and strain gradients is thus one of the main issues in the development of devices based on functional oxides.Highresolution x-ray diffraction (HR-XRD) is one of the most efficient non-destructive methods to extract such information [2].RNiO3 compounds are extremely difficult to stabilize because of the less stable 3+ oxidation state of Ni.We have recently shown [3, 4] that SmNiO3 (SNO) perovskite can be epitaxially grown on both SrTiO3 and LaAlO3 single crystalline substrates.Those two different cases are corresponding to different lattice mismatch between the film and the substrate.In this communication we present a detailed study of the microstructure of SNO films.This analysis is mainly based on HR-XRD and more specifically on Reciprocal Space Mapping.The contribution of chemical and mechanical effects to the lattice parameters can be rigorously separated using both laboratory and synchrotron HR-XRD.The effect of relaxation-induced misfit dislocations has been investigated and the dislocation densities were derived from the reciprocal space maps.The presence of misfit dislocations induces asymmetrical longitudinal profiles recorded at synchrotron source, those profiles were quantitatively analysed.

Microsymposiathe size-property correlation in these MoS2 nanosheets.Our results imply that nanostructured films with a high density of edge spins can give rise to magnetism even though the bulk material is nonmagnetic.For the first time, we show that Arsenic(ii) sulfide nanocrystal could be fabricated by a wet process of cluster-mediated nucleation method from the bulk material.Arsenic sulfide nanocrystals can show sizedependent fluorescences ranging from 287nm to 450 nm as well as two-photon upconverion.In China, realgar was also reported to be used as a drug in traditional Chinese medicine for more than 1500 years although arsenic is well known to be a highly toxic material.Preliminary pharmakinetic studies showed that arsenic sulfide quantum dots may afford good potential in anti-cancer treatment.

Microsymposiapoly(glycidyl methacrylate).The PSA films were prepared with solution casting on pre-cleaned glass surfaces.From a naive point of view, one would have expected homogenous films which are characterized by the average monomer composition.To investigate the surface structure, we probed the density profile perpendicular to the PSA surface using x-ray reflectivity (XRR).We detected the presence of an enrichment layer of one type of monomer at the surface, followed by an enrichment of the other monomer type underneath.Which type of monomer of the statistical copolymer is enriched at the free surface depends on the choice of the minority component.The lateral structure of the detected enrichment layers is probed with grazing incidence small angle x-ray scattering (GISAXS).